JP5255739B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5255739B2
JP5255739B2 JP2000243194A JP2000243194A JP5255739B2 JP 5255739 B2 JP5255739 B2 JP 5255739B2 JP 2000243194 A JP2000243194 A JP 2000243194A JP 2000243194 A JP2000243194 A JP 2000243194A JP 5255739 B2 JP5255739 B2 JP 5255739B2
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Japan
Prior art keywords
film
laser
laser light
laser beam
energy intensity
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Expired - Fee Related
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JP2000243194A
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English (en)
Japanese (ja)
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JP2001144015A (ja
JP2001144015A5 (enExample
Inventor
健司 笠原
律子 河崎
久 大谷
幸一郎 田中
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2000243194A priority Critical patent/JP5255739B2/ja
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Publication of JP2001144015A5 publication Critical patent/JP2001144015A5/ja
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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Lasers (AREA)
JP2000243194A 1999-08-18 2000-08-10 半導体装置の作製方法 Expired - Fee Related JP5255739B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000243194A JP5255739B2 (ja) 1999-08-18 2000-08-10 半導体装置の作製方法

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP1999231211 1999-08-18
JP23121199 1999-08-18
JP11-231211 1999-08-18
JP11-244204 1999-08-31
JP24420499 1999-08-31
JP1999244204 1999-08-31
JP2000243194A JP5255739B2 (ja) 1999-08-18 2000-08-10 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2001144015A JP2001144015A (ja) 2001-05-25
JP2001144015A5 JP2001144015A5 (enExample) 2007-09-06
JP5255739B2 true JP5255739B2 (ja) 2013-08-07

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ID=27331739

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JP2000243194A Expired - Fee Related JP5255739B2 (ja) 1999-08-18 2000-08-10 半導体装置の作製方法

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JP (1) JP5255739B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104718604B (zh) * 2012-10-23 2017-06-30 富士电机株式会社 半导体装置的制造方法
KR102516486B1 (ko) * 2017-12-05 2023-04-03 삼성디스플레이 주식회사 레이저 결정화 장치

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5815226A (ja) * 1981-07-20 1983-01-28 Nec Corp レ−ザアニ−リング法
JPH01155315A (ja) * 1987-12-14 1989-06-19 Nec Corp レーザ分割ミラー装置及びこれを使用したレーザ分割装置
JPH04364031A (ja) * 1991-06-10 1992-12-16 Ii & S:Kk レーザアニール方法およびレーザアニール装置
JPH0836144A (ja) * 1994-07-22 1996-02-06 Miyachi Technos Corp レーザ分岐装置
JPH09246555A (ja) * 1996-03-04 1997-09-19 Matsushita Electric Ind Co Ltd 薄膜トランジスタの製造方法
JPH09260676A (ja) * 1996-03-26 1997-10-03 Sharp Corp 薄膜トランジスタの製造方法
JPH09266318A (ja) * 1996-03-29 1997-10-07 Matsushita Electric Ind Co Ltd 薄膜トランジスタの製造方法
WO1997045827A1 (en) * 1996-05-28 1997-12-04 The Trustees Of Columbia University In The City Of New York Crystallization processing of semiconductor film regions on a substrate, and devices made therewith

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JP2001144015A (ja) 2001-05-25

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