JP5254783B2 - エッチ・プロセスの線寸法制御のための方法及びシステム - Google Patents

エッチ・プロセスの線寸法制御のための方法及びシステム Download PDF

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Publication number
JP5254783B2
JP5254783B2 JP2008511126A JP2008511126A JP5254783B2 JP 5254783 B2 JP5254783 B2 JP 5254783B2 JP 2008511126 A JP2008511126 A JP 2008511126A JP 2008511126 A JP2008511126 A JP 2008511126A JP 5254783 B2 JP5254783 B2 JP 5254783B2
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JP
Japan
Prior art keywords
trim
mask
time
plasma etch
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2008511126A
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English (en)
Japanese (ja)
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JP2008541445A5 (enExample
JP2008541445A (ja
Inventor
ラーナデー、ラジーブ、エム
マグトト、テレスィータ、キュー
ベーム、ゲーリー、ダブリュー
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International Business Machines Corp
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International Business Machines Corp
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Publication date
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Publication of JP2008541445A publication Critical patent/JP2008541445A/ja
Publication of JP2008541445A5 publication Critical patent/JP2008541445A5/ja
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Publication of JP5254783B2 publication Critical patent/JP5254783B2/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2008511126A 2005-05-10 2006-04-12 エッチ・プロセスの線寸法制御のための方法及びシステム Expired - Fee Related JP5254783B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/125,696 2005-05-10
US11/125,696 US7291285B2 (en) 2005-05-10 2005-05-10 Method and system for line-dimension control of an etch process
PCT/US2006/013562 WO2006121563A2 (en) 2005-05-10 2006-04-12 Method and system for line-dimension control of an etch process

Publications (3)

Publication Number Publication Date
JP2008541445A JP2008541445A (ja) 2008-11-20
JP2008541445A5 JP2008541445A5 (enExample) 2009-02-19
JP5254783B2 true JP5254783B2 (ja) 2013-08-07

Family

ID=37397042

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008511126A Expired - Fee Related JP5254783B2 (ja) 2005-05-10 2006-04-12 エッチ・プロセスの線寸法制御のための方法及びシステム

Country Status (5)

Country Link
US (2) US7291285B2 (enExample)
JP (1) JP5254783B2 (enExample)
CN (1) CN101361073B (enExample)
TW (1) TW200717642A (enExample)
WO (1) WO2006121563A2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7774082B2 (en) * 2006-10-05 2010-08-10 Tokyo Electron Limited Substrate processing method and storage medium having program stored therein
JP2009239030A (ja) * 2008-03-27 2009-10-15 Toshiba Corp 半導体装置の製造方法
US8229588B2 (en) * 2009-03-03 2012-07-24 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for tuning advanced process control parameters
JP2011222726A (ja) * 2010-04-08 2011-11-04 Elpida Memory Inc 半導体装置の製造方法、ウェハ処理システム及びプログラム
CN104716033A (zh) * 2015-03-20 2015-06-17 上海华力微电子有限公司 改善刻蚀腔体养护后多晶硅栅极关键尺寸稳定性的方法
CN107958838B (zh) * 2017-11-08 2020-08-04 上海华力微电子有限公司 一种根据射频时数改善一体化刻蚀工艺面内均匀性的方法
DE102019120765B4 (de) * 2018-09-27 2024-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. Verfahren zum bilden eines halbleiterbauelements
CN116169063A (zh) * 2023-02-24 2023-05-26 上海华力微电子有限公司 改善刻蚀工艺面内均匀性的方法及执行其的刻蚀设备
CN119873729A (zh) * 2024-12-18 2025-04-25 安徽华鑫微纳集成电路有限公司 一种基于离子束修整技术的控制mems空腔结构硅厚的方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6645677B1 (en) * 2000-09-18 2003-11-11 Micronic Laser Systems Ab Dual layer reticle blank and manufacturing process
US6368982B1 (en) * 2000-11-15 2002-04-09 Advanced Micro Devices, Inc. Pattern reduction by trimming a plurality of layers of different handmask materials
US20020142252A1 (en) * 2001-03-29 2002-10-03 International Business Machines Corporation Method for polysilicon conductor (PC) Trimming for shrinking critical dimension and isolated-nested offset correction
US6864041B2 (en) * 2001-05-02 2005-03-08 International Business Machines Corporation Gate linewidth tailoring and critical dimension control for sub-100 nm devices using plasma etching
TWI306269B (enExample) * 2001-06-27 2009-02-11 Tokyo Electron Ltd
JP2003077900A (ja) * 2001-09-06 2003-03-14 Hitachi Ltd 半導体装置の製造方法
WO2003025689A2 (en) * 2001-09-14 2003-03-27 Ibex Process Technology, Inc. Large scale process control by driving factor identification
US6960416B2 (en) * 2002-03-01 2005-11-01 Applied Materials, Inc. Method and apparatus for controlling etch processes during fabrication of semiconductor devices
KR101025527B1 (ko) * 2002-09-30 2011-04-04 도쿄엘렉트론가부시키가이샤 반도체 제조 프로세스의 모니터링 및 제어를 위한 방법 및장치
US7010374B2 (en) * 2003-03-04 2006-03-07 Hitachi High-Technologies Corporation Method for controlling semiconductor processing apparatus
JP4171380B2 (ja) * 2003-09-05 2008-10-22 株式会社日立ハイテクノロジーズ エッチング装置およびエッチング方法
US6893975B1 (en) * 2004-03-31 2005-05-17 Tokyo Electron Limited System and method for etching a mask
US6960775B1 (en) * 2004-04-13 2005-11-01 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7172969B2 (en) * 2004-08-26 2007-02-06 Tokyo Electron Limited Method and system for etching a film stack
US7301645B2 (en) * 2004-08-31 2007-11-27 Taiwan Semiconductor Manufacturing Co., Ltd. In-situ critical dimension measurement
US7153709B1 (en) * 2004-08-31 2006-12-26 Advanced Micro Devices, Inc. Method and apparatus for calibrating degradable components using process state data
US7209798B2 (en) * 2004-09-20 2007-04-24 Tokyo Electron Limited Iso/nested cascading trim control with model feedback updates
US7142938B2 (en) * 2004-10-13 2006-11-28 Taiwan Semiconductor Manufacturing Co., Ltd. Manufacturing management system and method

Also Published As

Publication number Publication date
US7700378B2 (en) 2010-04-20
US20060255010A1 (en) 2006-11-16
TW200717642A (en) 2007-05-01
CN101361073A (zh) 2009-02-04
WO2006121563A2 (en) 2006-11-16
US20080032428A1 (en) 2008-02-07
US7291285B2 (en) 2007-11-06
WO2006121563A3 (en) 2007-08-23
CN101361073B (zh) 2010-09-22
JP2008541445A (ja) 2008-11-20

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