TWI306269B - - Google Patents

Download PDF

Info

Publication number
TWI306269B
TWI306269B TW091113908A TW91113908A TWI306269B TW I306269 B TWI306269 B TW I306269B TW 091113908 A TW091113908 A TW 091113908A TW 91113908 A TW91113908 A TW 91113908A TW I306269 B TWI306269 B TW I306269B
Authority
TW
Taiwan
Prior art keywords
data
processing
processed
processing result
operation data
Prior art date
Application number
TW091113908A
Other languages
English (en)
Chinese (zh)
Inventor
Hideki Tanaka
Satoshi Harada
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of TWI306269B publication Critical patent/TWI306269B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
TW091113908A 2001-06-27 2002-06-25 TWI306269B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001194762 2001-06-27

Publications (1)

Publication Number Publication Date
TWI306269B true TWI306269B (enExample) 2009-02-11

Family

ID=19032842

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091113908A TWI306269B (enExample) 2001-06-27 2002-06-25

Country Status (3)

Country Link
JP (1) JP4220378B2 (enExample)
TW (1) TWI306269B (enExample)
WO (1) WO2003003437A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6616759B2 (en) 2001-09-06 2003-09-09 Hitachi, Ltd. Method of monitoring and/or controlling a semiconductor manufacturing apparatus and a system therefor
CN1653598B (zh) 2002-05-16 2010-05-05 东京毅力科创株式会社 处理装置状态或处理结果的预测方法
JP4363861B2 (ja) * 2003-02-04 2009-11-11 株式会社日立ハイテクノロジーズ 半導体製造装置
JP4707421B2 (ja) * 2005-03-14 2011-06-22 東京エレクトロン株式会社 処理装置，処理装置の消耗部品管理方法，処理システム，処理システムの消耗部品管理方法
US7291285B2 (en) * 2005-05-10 2007-11-06 International Business Machines Corporation Method and system for line-dimension control of an etch process
KR101286240B1 (ko) 2007-10-23 2013-07-15 삼성전자주식회사 반도체 구조물의 형상을 예정하는 공정 파라 메타의 예측시스템, 상기 공정 파라 메타의 예측 시스템을 가지는반도체 제조 장비 및 그 장비의 사용방법
JP4836994B2 (ja) * 2008-06-11 2011-12-14 株式会社日立製作所 半導体処理装置
JP5643528B2 (ja) 2009-03-30 2014-12-17 東京エレクトロン株式会社 基板処理装置
JP5782226B2 (ja) 2010-03-24 2015-09-24 東京エレクトロン株式会社 基板処理装置
KR102112130B1 (ko) * 2013-10-23 2020-05-19 주식회사 디엠에스 샤워헤드 장치
US20240327988A1 (en) * 2023-03-28 2024-10-03 Applied Materials, Inc. Thermal processing chamber state based on thermal sensor readings

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04212414A (ja) * 1990-08-16 1992-08-04 Fuji Electric Co Ltd プラズマ処理装置
JP3300816B2 (ja) * 1992-02-27 2002-07-08 株式会社日立国際電気 半導体製造装置管理方法及びその装置
US5442562A (en) * 1993-12-10 1995-08-15 Eastman Kodak Company Method of controlling a manufacturing process using multivariate analysis
US6197116B1 (en) * 1996-08-29 2001-03-06 Fujitsu Limited Plasma processing system
JPH10223499A (ja) * 1997-02-06 1998-08-21 Hitachi Ltd 物品の製造方法、物品の製造システムおよび複数の加工処理装置の運用方法
US6368975B1 (en) * 1999-07-07 2002-04-09 Applied Materials, Inc. Method and apparatus for monitoring a process by employing principal component analysis

Also Published As

Publication number Publication date
WO2003003437A1 (fr) 2003-01-09
JP4220378B2 (ja) 2009-02-04
JPWO2003003437A1 (ja) 2004-10-21

Similar Documents

Publication Publication Date Title
JP4464276B2 (ja) プラズマ処理方法及びプラズマ処理装置
CN100552889C (zh) 等离子体处理装置
TWI306269B (enExample)
US7289866B2 (en) Plasma processing method and apparatus
Gomez et al. Atomic oxygen surface loss coefficient measurements in a capacitive/inductive radio-frequency plasma
KR101027183B1 (ko) 플라즈마 처리로부터 데이터를 분석하는 방법 및 시스템
US7505879B2 (en) Method for generating multivariate analysis model expression for processing apparatus, method for executing multivariate analysis of processing apparatus, control device of processing apparatus and control system for processing apparatus
US8073667B2 (en) System and method for using first-principles simulation to control a semiconductor manufacturing process
CN108281346A (zh) 从光谱的时间序列进行特征提取以控制工艺结束点的方法
KR20070028204A (ko) 플라즈마처리장치 및 처리방법
TWI276162B (en) Multi-variable analysis model forming method of processing apparatus, multi-variable analysis method for processing apparatus, control apparatus of processing apparatus, and control system of processing apparatus
US7630064B2 (en) Prediction method and apparatus for substrate processing apparatus
US6553335B2 (en) Method and apparatus for determining end-point in a chamber cleaning process
US20100004795A1 (en) Plasma processing method and plasma processing apparatus
TWI297904B (enExample)
TW202329281A (zh) 可用於模型訓練的掃描自由基感測器
Splichal et al. Application of chemometrics to optical emission spectroscopy for plasma monitoring
US20250349525A1 (en) Recirculation control for a plasma process using a byproduct concentration
TW511128B (en) Method of monitoring and/or controlling a semiconductor manufacturing apparatus and a system therefor
JP2025162768A (ja) 情報処理装置、情報処理方法及びプログラム
Jung et al. Improvement of photomask CD uniformity using spatially resolved optical emission spectroscopy
CN116913750A (zh) 处理数据的分析方法和信息处理装置
Kim et al. In-situ UV absorption CF2 sensor for reactive ion etch process control
JP2011002345A (ja) プラズマ近傍およびプラズマ中でのガス分解率測定装置及び測定方法
JP2009212334A (ja) プラズマ処理方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees