CN101361073B - 用于刻蚀工艺的线尺寸控制的方法和系统 - Google Patents

用于刻蚀工艺的线尺寸控制的方法和系统 Download PDF

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Publication number
CN101361073B
CN101361073B CN200680010103XA CN200680010103A CN101361073B CN 101361073 B CN101361073 B CN 101361073B CN 200680010103X A CN200680010103X A CN 200680010103XA CN 200680010103 A CN200680010103 A CN 200680010103A CN 101361073 B CN101361073 B CN 101361073B
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CN
China
Prior art keywords
mask
layer
time
plasma etching
plasma
Prior art date
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Expired - Fee Related
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CN200680010103XA
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English (en)
Chinese (zh)
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CN101361073A (zh
Inventor
拉吉夫·M·拉纳德
特里斯塔·Q·马格托托
加里·W·贝姆
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Core Usa Second LLC
GlobalFoundries Inc
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International Business Machines Corp
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Publication of CN101361073A publication Critical patent/CN101361073A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
CN200680010103XA 2005-05-10 2006-04-12 用于刻蚀工艺的线尺寸控制的方法和系统 Expired - Fee Related CN101361073B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/125,696 2005-05-10
US11/125,696 US7291285B2 (en) 2005-05-10 2005-05-10 Method and system for line-dimension control of an etch process
PCT/US2006/013562 WO2006121563A2 (en) 2005-05-10 2006-04-12 Method and system for line-dimension control of an etch process

Publications (2)

Publication Number Publication Date
CN101361073A CN101361073A (zh) 2009-02-04
CN101361073B true CN101361073B (zh) 2010-09-22

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ID=37397042

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CN200680010103XA Expired - Fee Related CN101361073B (zh) 2005-05-10 2006-04-12 用于刻蚀工艺的线尺寸控制的方法和系统

Country Status (5)

Country Link
US (2) US7291285B2 (enExample)
JP (1) JP5254783B2 (enExample)
CN (1) CN101361073B (enExample)
TW (1) TW200717642A (enExample)
WO (1) WO2006121563A2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7774082B2 (en) * 2006-10-05 2010-08-10 Tokyo Electron Limited Substrate processing method and storage medium having program stored therein
JP2009239030A (ja) * 2008-03-27 2009-10-15 Toshiba Corp 半導体装置の製造方法
US8229588B2 (en) * 2009-03-03 2012-07-24 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for tuning advanced process control parameters
JP2011222726A (ja) * 2010-04-08 2011-11-04 Elpida Memory Inc 半導体装置の製造方法、ウェハ処理システム及びプログラム
CN104716033A (zh) * 2015-03-20 2015-06-17 上海华力微电子有限公司 改善刻蚀腔体养护后多晶硅栅极关键尺寸稳定性的方法
CN107958838B (zh) * 2017-11-08 2020-08-04 上海华力微电子有限公司 一种根据射频时数改善一体化刻蚀工艺面内均匀性的方法
DE102019120765B4 (de) * 2018-09-27 2024-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. Verfahren zum bilden eines halbleiterbauelements
CN116169063A (zh) * 2023-02-24 2023-05-26 上海华力微电子有限公司 改善刻蚀工艺面内均匀性的方法及执行其的刻蚀设备
CN119873729A (zh) * 2024-12-18 2025-04-25 安徽华鑫微纳集成电路有限公司 一种基于离子束修整技术的控制mems空腔结构硅厚的方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1459048A (zh) * 2000-09-18 2003-11-26 微激光系统公司 双层制模白板及其制造工艺

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6368982B1 (en) * 2000-11-15 2002-04-09 Advanced Micro Devices, Inc. Pattern reduction by trimming a plurality of layers of different handmask materials
US20020142252A1 (en) * 2001-03-29 2002-10-03 International Business Machines Corporation Method for polysilicon conductor (PC) Trimming for shrinking critical dimension and isolated-nested offset correction
US6864041B2 (en) * 2001-05-02 2005-03-08 International Business Machines Corporation Gate linewidth tailoring and critical dimension control for sub-100 nm devices using plasma etching
TWI306269B (enExample) * 2001-06-27 2009-02-11 Tokyo Electron Ltd
JP2003077900A (ja) * 2001-09-06 2003-03-14 Hitachi Ltd 半導体装置の製造方法
WO2003025689A2 (en) * 2001-09-14 2003-03-27 Ibex Process Technology, Inc. Large scale process control by driving factor identification
US6960416B2 (en) * 2002-03-01 2005-11-01 Applied Materials, Inc. Method and apparatus for controlling etch processes during fabrication of semiconductor devices
KR101025527B1 (ko) * 2002-09-30 2011-04-04 도쿄엘렉트론가부시키가이샤 반도체 제조 프로세스의 모니터링 및 제어를 위한 방법 및장치
US7010374B2 (en) * 2003-03-04 2006-03-07 Hitachi High-Technologies Corporation Method for controlling semiconductor processing apparatus
JP4171380B2 (ja) * 2003-09-05 2008-10-22 株式会社日立ハイテクノロジーズ エッチング装置およびエッチング方法
US6893975B1 (en) * 2004-03-31 2005-05-17 Tokyo Electron Limited System and method for etching a mask
US6960775B1 (en) * 2004-04-13 2005-11-01 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7172969B2 (en) * 2004-08-26 2007-02-06 Tokyo Electron Limited Method and system for etching a film stack
US7301645B2 (en) * 2004-08-31 2007-11-27 Taiwan Semiconductor Manufacturing Co., Ltd. In-situ critical dimension measurement
US7153709B1 (en) * 2004-08-31 2006-12-26 Advanced Micro Devices, Inc. Method and apparatus for calibrating degradable components using process state data
US7209798B2 (en) * 2004-09-20 2007-04-24 Tokyo Electron Limited Iso/nested cascading trim control with model feedback updates
US7142938B2 (en) * 2004-10-13 2006-11-28 Taiwan Semiconductor Manufacturing Co., Ltd. Manufacturing management system and method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1459048A (zh) * 2000-09-18 2003-11-26 微激光系统公司 双层制模白板及其制造工艺

Also Published As

Publication number Publication date
US7700378B2 (en) 2010-04-20
JP5254783B2 (ja) 2013-08-07
US20060255010A1 (en) 2006-11-16
TW200717642A (en) 2007-05-01
CN101361073A (zh) 2009-02-04
WO2006121563A2 (en) 2006-11-16
US20080032428A1 (en) 2008-02-07
US7291285B2 (en) 2007-11-06
WO2006121563A3 (en) 2007-08-23
JP2008541445A (ja) 2008-11-20

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Patentee before: Core USA second LLC

Effective date of registration: 20171205

Address after: American New York

Patentee after: Core USA second LLC

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Patentee before: International Business Machines Corp.

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Termination date: 20190412

CF01 Termination of patent right due to non-payment of annual fee