JP5245448B2 - 有機エレクトロルミネセンス表示装置及びその製造方法 - Google Patents

有機エレクトロルミネセンス表示装置及びその製造方法 Download PDF

Info

Publication number
JP5245448B2
JP5245448B2 JP2008041046A JP2008041046A JP5245448B2 JP 5245448 B2 JP5245448 B2 JP 5245448B2 JP 2008041046 A JP2008041046 A JP 2008041046A JP 2008041046 A JP2008041046 A JP 2008041046A JP 5245448 B2 JP5245448 B2 JP 5245448B2
Authority
JP
Japan
Prior art keywords
semiconductor layer
light
film
display device
organic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2008041046A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009198853A (ja
JP2009198853A5 (enExample
Inventor
広 松本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Casio Computer Co Ltd
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Priority to JP2008041046A priority Critical patent/JP5245448B2/ja
Publication of JP2009198853A publication Critical patent/JP2009198853A/ja
Publication of JP2009198853A5 publication Critical patent/JP2009198853A5/ja
Application granted granted Critical
Publication of JP5245448B2 publication Critical patent/JP5245448B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2008041046A 2008-02-22 2008-02-22 有機エレクトロルミネセンス表示装置及びその製造方法 Active JP5245448B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008041046A JP5245448B2 (ja) 2008-02-22 2008-02-22 有機エレクトロルミネセンス表示装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008041046A JP5245448B2 (ja) 2008-02-22 2008-02-22 有機エレクトロルミネセンス表示装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2009198853A JP2009198853A (ja) 2009-09-03
JP2009198853A5 JP2009198853A5 (enExample) 2011-03-03
JP5245448B2 true JP5245448B2 (ja) 2013-07-24

Family

ID=41142388

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008041046A Active JP5245448B2 (ja) 2008-02-22 2008-02-22 有機エレクトロルミネセンス表示装置及びその製造方法

Country Status (1)

Country Link
JP (1) JP5245448B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101084176B1 (ko) * 2009-11-26 2011-11-17 삼성모바일디스플레이주식회사 유기 발광 디스플레이 장치
JP5418421B2 (ja) 2010-06-21 2014-02-19 カシオ計算機株式会社 液晶表示素子
EP2852256A4 (en) * 2012-06-20 2016-04-27 Pioneer Corp ORGANIC ELECTROLUMINESCENT DEVICE
KR102129674B1 (ko) * 2017-09-26 2020-07-02 주식회사 엘지화학 투명 발광소자 디스플레이용 전극 기판 및 이의 제조방법
CN112002733B (zh) * 2020-08-06 2023-12-01 武汉华星光电半导体显示技术有限公司 Oled显示装置及制备方法
WO2025173549A1 (ja) * 2024-02-15 2025-08-21 ソニーセミコンダクタソリューションズ株式会社 発光装置及び電子機器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60117690A (ja) * 1983-11-30 1985-06-25 Fujitsu Ltd 半導体装置
JP2655126B2 (ja) * 1995-03-31 1997-09-17 日本電気株式会社 薄膜トランジスタの製造方法
JP2007298992A (ja) * 1995-11-17 2007-11-15 Semiconductor Energy Lab Co Ltd 半導体装置
JP3695308B2 (ja) * 2000-10-27 2005-09-14 日本電気株式会社 アクティブマトリクス有機el表示装置及びその製造方法
JP4239873B2 (ja) * 2003-05-19 2009-03-18 セイコーエプソン株式会社 電気光学装置および電子機器
JP3873965B2 (ja) * 2003-11-10 2007-01-31 セイコーエプソン株式会社 表示装置及びアクテブマトリクス基板

Also Published As

Publication number Publication date
JP2009198853A (ja) 2009-09-03

Similar Documents

Publication Publication Date Title
US8148727B2 (en) Display device having oxide thin film transistor and fabrication method thereof
KR101195167B1 (ko) 표시장치와 표시장치의 제작 방법 및 텔레비전 장치
US7247529B2 (en) Method for manufacturing display device
KR101846589B1 (ko) 박막 반도체 장치 및 박막 반도체 장치의 제조 방법
US7354328B2 (en) Organic electroluminescent device and fabricating method thereof
US8309960B2 (en) Display device
US20070296003A1 (en) Thin Film Transistor Substrate and Method for Manufacturing the Same
US20100258805A1 (en) Thin Film Transistor and Image Display Unit
JP5245448B2 (ja) 有機エレクトロルミネセンス表示装置及びその製造方法
EP3621120B1 (en) Thin film transistor and preparation method therefor, array substrate and preparation method therefor
KR20090010890A (ko) 전기 광학 장치, 전자 기기, 전기 광학 장치의 제조 방법
KR102467812B1 (ko) 표시 장치 및 표시 장치의 제조 방법
KR20150009126A (ko) 유기 발광 표시 장치 및 그 제조 방법
JP2007506139A (ja) 薄膜トランジスタ表示板、これを含む平板ディスプレイ表示装置及びその製造方法
KR20150057016A (ko) 유기전계 발광소자 및 이의 제조 방법
CN114981973A (zh) 显示基板及其制备方法、显示装置
KR20150072117A (ko) 유기발광다이오드 표시장치 및 이의 제조방법
KR20120043404A (ko) 표시장치 및 이의 제조방법
KR101947808B1 (ko) 박막트랜지스터 어레이 기판 및 그 제조방법
JP2009026671A (ja) 電気光学装置、電子機器、電気光学装置の製造方法
JP5302532B2 (ja) 表示装置及びその製造方法
JP5046915B2 (ja) 表示装置用基板、表示装置、及び表示装置用基板の製造方法
KR20100069902A (ko) 액정표시장치 및 그 제조방법
JP4278244B2 (ja) El表示装置
JP2010225781A (ja) 薄膜トランジスタ及び薄膜トランジスタの製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110114

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110114

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120524

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120529

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120727

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130312

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130325

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160419

Year of fee payment: 3

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250