JP2009198853A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2009198853A5 JP2009198853A5 JP2008041046A JP2008041046A JP2009198853A5 JP 2009198853 A5 JP2009198853 A5 JP 2009198853A5 JP 2008041046 A JP2008041046 A JP 2008041046A JP 2008041046 A JP2008041046 A JP 2008041046A JP 2009198853 A5 JP2009198853 A5 JP 2009198853A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- switching element
- light
- display device
- organic electroluminescence
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 15
- 238000005401 electroluminescence Methods 0.000 claims 13
- 238000004519 manufacturing process Methods 0.000 claims 6
- 230000015572 biosynthetic process Effects 0.000 claims 3
- 239000000463 material Substances 0.000 claims 2
- 239000004973 liquid crystal related substance Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008041046A JP5245448B2 (ja) | 2008-02-22 | 2008-02-22 | 有機エレクトロルミネセンス表示装置及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008041046A JP5245448B2 (ja) | 2008-02-22 | 2008-02-22 | 有機エレクトロルミネセンス表示装置及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009198853A JP2009198853A (ja) | 2009-09-03 |
| JP2009198853A5 true JP2009198853A5 (enExample) | 2011-03-03 |
| JP5245448B2 JP5245448B2 (ja) | 2013-07-24 |
Family
ID=41142388
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008041046A Active JP5245448B2 (ja) | 2008-02-22 | 2008-02-22 | 有機エレクトロルミネセンス表示装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5245448B2 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101084176B1 (ko) | 2009-11-26 | 2011-11-17 | 삼성모바일디스플레이주식회사 | 유기 발광 디스플레이 장치 |
| JP5418421B2 (ja) | 2010-06-21 | 2014-02-19 | カシオ計算機株式会社 | 液晶表示素子 |
| US20150206927A1 (en) * | 2012-06-20 | 2015-07-23 | Pioneer Corporation | Organic electroluminescent device |
| WO2019066336A1 (ko) * | 2017-09-26 | 2019-04-04 | 주식회사 엘지화학 | 투명 발광소자 디스플레이용 전극 기판 및 이의 제조방법 |
| CN112002733B (zh) * | 2020-08-06 | 2023-12-01 | 武汉华星光电半导体显示技术有限公司 | Oled显示装置及制备方法 |
| WO2025173549A1 (ja) * | 2024-02-15 | 2025-08-21 | ソニーセミコンダクタソリューションズ株式会社 | 発光装置及び電子機器 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60117690A (ja) * | 1983-11-30 | 1985-06-25 | Fujitsu Ltd | 半導体装置 |
| JP2655126B2 (ja) * | 1995-03-31 | 1997-09-17 | 日本電気株式会社 | 薄膜トランジスタの製造方法 |
| JP2007298992A (ja) * | 1995-11-17 | 2007-11-15 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP3695308B2 (ja) * | 2000-10-27 | 2005-09-14 | 日本電気株式会社 | アクティブマトリクス有機el表示装置及びその製造方法 |
| JP4239873B2 (ja) * | 2003-05-19 | 2009-03-18 | セイコーエプソン株式会社 | 電気光学装置および電子機器 |
| JP3873965B2 (ja) * | 2003-11-10 | 2007-01-31 | セイコーエプソン株式会社 | 表示装置及びアクテブマトリクス基板 |
-
2008
- 2008-02-22 JP JP2008041046A patent/JP5245448B2/ja active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101233348B1 (ko) | 표시 장치 및 그 제조 방법 | |
| US9312146B2 (en) | Manufacturing method of a thin film transistor | |
| US9634032B2 (en) | Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof | |
| US20160359054A1 (en) | Array substrate and method of fabricating the same, display panel and display device | |
| US20110147740A1 (en) | Display substrate, method of manufacturing the same | |
| CN103021820B (zh) | 制造薄膜晶体管的方法和制造有机发光显示设备的方法 | |
| US9748276B2 (en) | Thin film transistor and method of manufacturing the same, array substrate and display device | |
| CN104681629B (zh) | 薄膜晶体管、阵列基板及其各自的制备方法、显示装置 | |
| WO2018227748A1 (zh) | Oled显示面板及其制作方法 | |
| US9543415B2 (en) | Thin film transistor driving backplane and manufacturing method thereof, and display panel | |
| CN103715226A (zh) | Oled阵列基板及其制备方法、显示面板及显示装置 | |
| JP2015103427A (ja) | 表示装置の製造方法 | |
| JP2009198853A5 (enExample) | ||
| CN106847837B (zh) | 一种互补型薄膜晶体管及其制作方法和阵列基板 | |
| US7923735B2 (en) | Thin film transistor and method of manufacturing the same | |
| TW201533897A (zh) | 有機發光顯示面板及其製作方法 | |
| JP2005038842A5 (enExample) | ||
| WO2013170574A1 (zh) | 氧化物薄膜晶体管及其制作方法、阵列基板和显示装置 | |
| US20180083082A1 (en) | Package method of oled substrate and oled package structure | |
| CN103137492B (zh) | 制造氧化物薄膜晶体管的方法和显示装置 | |
| JP6899487B2 (ja) | Tft基板及びその製造方法 | |
| US9543539B2 (en) | OLED device and manufacturing method thereof and display apparatus | |
| WO2019090837A1 (zh) | 双面显示器及其制作方法 | |
| CN104952934A (zh) | 薄膜晶体管及制造方法、阵列基板、显示面板 | |
| KR101353538B1 (ko) | 투명 박막 트랜지스터의 제조 방법 |