JP5245270B2 - Semiconductor device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a flip chip and a CSP among sealed semiconductor devices, and more particularly to a semiconductor device mounting structure and mounting method that require high connection reliability.

  With the rapid development of electronic devices, semiconductor devices have been required to have higher functionality than ever. As the number of functions of a semiconductor device increases, the number of input / output terminals of the semiconductor device increases, and the wiring length for operating the semiconductor device at high speed is required to be shortened.

  As a connection method developed to realize such a requirement, there is a flip chip connection. The flip chip connection is suitable for increasing the number of pins because a connection pad can be provided on the area of the wiring surface of the semiconductor device. In addition, compared with other semiconductor element connection methods such as wire bonding and tape automated bonding, the length of wiring can be shortened because no lead wire is required.

  For the reasons described above, the number of semiconductor chip devices used in electronic devices using flip chip connection is increasing.

  At present, Au, solder, or the like is used as a material for a general bump electrode used in a flip chip.

  Examples of the solder material include Sn-Pb eutectic solder, but are not limited to Sn-Pb eutectic solder. For example, Sn-Pb (excluding eutectic), Sn-Ag, Sn-Cu, Sn-Sb. , Sn—Zn, Sn—Bi, and materials obtained by further adding specific additive elements to the above-described materials can be used, and these are used as appropriate.

On the other hand, in many of the semiconductor elements that are flip-chip connected, the connection reliability is ensured by resin-sealing the gap between the semiconductor device and the wiring board in order to relieve stress due to the difference in thermal expansion between the semiconductor device and the wiring board. There is a need to. As such an example, there is Patent Document 1 or the like.

Examples of other bump electrode materials include those using conductive resin bumps as disclosed in Patent Document 2, for example.
Japanese Patent Laid-Open No. 11-233558 JP 2000-332053 A

  In the case of the former example using the former solder bump, the connection reliability is improved by performing resin sealing in order to relieve the stress due to the difference in thermal expansion between the semiconductor device and the wiring board. It is much higher than the resin. For example, the elastic modulus of Sn-3AG-0.5Cu solder is about 40 GPa, whereas the elastic modulus of epoxy resin is about 10 GPa even when a high elastic modulus is obtained by mixing a filler.

  For this reason, stress tends to concentrate on a solder portion having a high elastic modulus, resulting in a high stress, and a resin distribution having a low stress occurs in a resin portion having a low elastic modulus. That is, high stress is still generated in the electrode portion connecting the semiconductor device and the wiring board, which may cause defects such as cracks in the solder bumps.

  In order to improve the connection reliability of solder bumps, it is necessary to increase the elastic modulus of the resin part. However, the most common method of mixing inorganic fillers has a limit on the amount of inorganic fillers mixed, and it is too mixed. And the viscosity of the resin becomes abnormally high. In such a case, sufficient fluidity of the resin cannot be ensured, and there is a problem that the resin sealing itself between the semiconductor device and the wiring board becomes difficult.

  In the case of the structure in which the semiconductor device and the wiring board are connected by the latter conductive resin bump, the stress relaxation effect by using the conductive resin can be expected, but since the bonding strength of the bump itself is weak, the stress is low. However, there is a problem that it is difficult to ensure sufficient connection reliability because the joint portion is destroyed. When the connection strength of the resin is improved, there is a problem that it is difficult to ensure good conductivity, and it is difficult to ensure both sufficient bonding strength and good conductivity.

  As described above, the flip chip connection is a structure suitable for high performance, so that demand is expected to increase in the future, but there remains a problem of ensuring high reliability.

  SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor device mounting structure and mounting method capable of ensuring high reliability, which is an important issue in flip chip connection and CSP connection.

  In order to achieve the above object, according to a first aspect of the present invention, there is provided a semiconductor device in which a semiconductor element is electrically connected to a wiring board through conductive bumps, wherein a gap between the semiconductor element and the wiring board is provided. Sealed with a first resin, and the elastic modulus of the first resin is larger than the elastic modulus of the bump, and the bump comprises a plurality of conductive particles and a second resin, and at least a part of the surface of the conductive particles Is provided with at least one conductive material layer, and the central portion of the conductive particles is made of a third resin.

  According to the above configuration, even when thermal stress is generated due to a difference in thermal expansion coefficient between the semiconductor device and the wiring board, stress is easily applied to the first resin (insulating resin) side having a high elastic modulus. As a result, the stress applied to the conductive resin bump portion is reduced, and as a result, the life of the bump that is the conductive portion is prolonged, so that high reliability can be ensured. Furthermore, as a material development issue for conductive resin bumps, there is a balance between low resistance and high adhesion strength, but if this mounting structure is applied, even if a conductive resin with low adhesion strength is used, thermal stress will be reduced. By increasing the adhesion strength of the first resin that is likely to be applied, it is possible to ensure high reliability, and to ensure both high reliability and good conduction, which were problems when using conductive resin bumps. Is feasible. Furthermore, as an effect of lowering the elastic modulus of the conductive resin bump, if a defect is confirmed after the semiconductor device and the wiring board are connected via the conductive resin bump, it is before sealing with the first resin. In order to destroy the wiring board or the semiconductor device by removing the semiconductor device with the conductive resin bump heated to the glass transition temperature or higher and the elastic modulus of the conductive resin bump being lowered as much as possible It is easy to repair without any problems. Further, by adding the relationship of the glass transition point of the conductive resin bump <the glass transition point of the first resin, the elastic modulus of the conductive resin bump <the elasticity of the first resin always without depending on the temperature condition. It is possible to maintain the relationship between the rates and maintain a good state.

  Furthermore, in the present invention, the conductive particles that greatly affect the elastic modulus of the conductive resin bumps depend on the resin physical properties of the core, which is the third resin. A conductive resin bump can be realized. Therefore, it is possible to easily obtain the relationship of the elastic modulus of the conductive resin bump <the elastic modulus of the first resin.

  In addition, as a bump forming method in the case where a conductive layer is provided around the third resin, there is a method using one resin core ball as a bump. Compared with the case where a large number of particles of the present invention are used, the following method is used. There are challenges.

First, the first problem in the method of using one resin core ball as a bump is that a resin core ball of a dedicated size must be prepared according to the pitch of the semiconductor device to be applied. The manufacturing cost of this is.
If the bump size balance becomes worse with respect to the pitch, and the bump size is too large with respect to the pitch, there is a problem of short-circuiting with the adjacent bump, and if the bump size is too small with respect to the pitch, the connection reliability is improved. There is a problem of lowering.

  A second problem in the method of using one resin core ball as a bump is bump formation. In the case of the present invention, it is possible to form a bump with a conductive paste containing resin core particles by using a screen printing method, but in the case of a single resin core ball bump, the individual bumps are aligned on the pad. Therefore, the screen printing method is more advantageous in terms of bump formation cost.

  In the first aspect of the present invention, it is preferable that the second resin includes a component for removing an oxide film of the conductive material layer. With this configuration, when the conductive layer on the surface of the conductive particles is melted and bonded, the oxide film on the surface of the conductive layer can be removed by the oxide film removing action of the second resin. It is possible to realize a stable coupling.

  In any of the above-described configurations of the first aspect of the present invention, the third resin is preferably a thermosetting resin. With such a configuration, since the third resin does not melt even under various temperature conditions, a stable shape can always be maintained. Therefore, even when the surfaces of the conductive particles are melted and bonded, since the core is stable, the arrangement and shape of the conductive particles can be bonded without greatly breaking, so it is easy to ensure conduction between the semiconductor device and the substrate. become.

  In any of the above configurations of the first aspect of the present invention, it is preferable that the second resin contains nanoparticles. With such a configuration, the low melting point action by the nanoparticles makes it possible to join the conductive particles when the second resin is cured, and it becomes easy to obtain stable conduction characteristics.

  In any of the above configurations of the first aspect of the present invention, it is preferable that an inorganic filler is mixed in the first resin. With such a configuration, the elastic modulus of the first resin can be further improved, so that the effects of the present invention can be further extracted. Even when the elastic modulus of the first resin alone is lower than the elastic modulus of the conductive resin bump, by adding an inorganic filler to the first resin and increasing the elastic modulus of the first resin, The relationship can be improved.

  In order to achieve the above object, the present invention provides, as a second aspect, a step of supplying a first bump having conductivity to the connection electrode of the semiconductor element, and a step of supplying conductivity to the connection electrode of the wiring board. A step of supplying two bumps, a step of positioning and mounting the semiconductor element and the wiring board, and at least a part of the plurality of conductive particles contained in the first bump and the second bump by heating. A method of manufacturing a semiconductor device, comprising: a step of temporarily melting a conductive material layer covering the conductive layer and electrically connecting adjacent conductive particles, wherein the first bump has an elastic modulus after the first resin is cured. And providing a method of manufacturing a semiconductor device, wherein the elastic modulus of the second bump is greater than that after curing.

  According to the second aspect of the present invention, it is possible to realize a mounting structure of a semiconductor device that is in a good conductive state and has an elastic modulus of the conductive resin bump <an elastic modulus of the first resin.

  According to the present invention, it is possible to provide a mounting structure and a mounting method for a semiconductor device that can ensure high reliability, which is an important issue in flip chip connection and CSP connection.

  Although an embodiment using the present invention will be described with respect to an electronic component device using a flip chip mounting method, the applied electronic component may be any form such as CSP, BGA, bare chip, etc., and is not particularly limited.

First, an example of a mounting structure of a semiconductor device of the present invention will be described in detail with reference to FIG.
The electrode pads 3 of the semiconductor device 1 and the electrode pads 4 of the wiring board 2 are connected by conductive resin bumps 7 to achieve electrical connection between the semiconductor device 1 and the wiring board 2. An example of the electrode pad 4 of the wiring board 2 is a structure in which the surface of the copper wiring is plated with nickel, and further gold plating is formed thereon.

  The second resin 10 serving as the base material of the conductive resin bump 7 is an acrylic resin, a melamine resin, an epoxy resin, a polyolefin resin, a polyurethane resin, a polycarbonate resin, a polystyrene resin, a polyether resin, a polyamide resin, a polyimide resin, or a fluorine resin. There are various materials such as a polyester resin, a phenol resin, a fluorene resin, a benzocyclobutene resin, and a silicone resin, but there is no particular limitation, and these can be used alone or in combination of two or more. Epoxy resins that are excellent in terms of viscosity, cost, heat resistance, adhesiveness and the like are generally used, but resins that are liquid at room temperature of 25 ° C. are desirable.

  Further, when the surface of the conductive particles is melted, it is possible to drastically improve the bondability between the particles by adding an oxide film removing action to the second resin 10 which is the base material of the conductive resin bump 7. It is possible and effective. In order to give a flux action to the second resin 10, an unsaturated acid such as (meth) acrylic acid and maleic acid, an organic diacid such as oxalic acid and malonic acid, an organic acid such as citric acid, and the hydrocarbon side At least one halogen group, hydroxyl group, nitrile group, benzyl group, carboxyl group or the like may be added to the chain. These additives may be added to the second resin 10 in an amount of 3 to 10 wt% (weight%). As another method, the above-mentioned substance generated during the reaction between the curing agent of the epoxy resin and the main agent is used. It is also possible to remove the oxide film.

  The shape of the conductive particles 5 is various, such as a needle shape, a spherical shape, and a flake shape, but is not particularly limited. As shown in FIG. 1 (b), by using conductive particles in which a conductive layer 9 is applied to a third resin (resin core) 8, the physical properties of the conductive particles themselves, which are usually metals, are changed to the third resin. Thus, the physical properties of the conductive resin bumps can be reduced as much as possible. The conductive layer 9 is generally subjected to metal plating such as nickel, gold, or solder. When the conductive material does not melt with the above substances, the surface of each conductive particle 5 is contacted by the curing shrinkage force of the second resin 10 to ensure conduction.

  In addition, when the metal around the conductive particles 5 is melted to bond the particles, solder is suitable, and examples of the material include Sn / Pb eutectic solder, but are limited to Sn / Pb eutectic solder. Examples include Sn / Pb (excluding eutectic), Sn / Ag, Sn / Cu, Sn / Sb, Sn / Zn, Sn / Bi, and materials obtained by further adding specific additive elements to the listed materials. These can be used as appropriate. In this case, a large number of fine conductive particles 5 in the conductive resin bump 7 are integrated by the resin, and the conductive material on the surface of each particle is at least temporarily melted, and the particles are bonded and cured again. It has become a state. Accordingly, since the surface of the conductive particles 5 is melted and bonded between the particles, stable conduction can be ensured, and the elastic modulus of the bump itself can be increased by making the core of the conductive particles 5 a material having a low elastic modulus. It can be lowered. Furthermore, since the surface layers of a large number of fine conductive particles 5 are bonded, since there are many bonding points, stress is dispersed at each bonding point, thereby preventing stress concentration at the bonding points. It is possible to secure high reliability.

  Examples of the third resin 8 used for the core of the conductive particles 5 include melamine resin, epoxy resin, polyolefin resin, polyurethane resin, polyimide resin, fluororesin, polyester resin, phenol resin, and silicone resin. More preferably, it is a resin. The reason is that the third resin 8 that is the core does not melt even under various temperature conditions, so that a stable shape can always be maintained. Therefore, even when the surfaces of the conductive particles 5 are melted and bonded, since the core is stable, the arrangement and shape of the conductive particles 5 can be bonded without being greatly damaged, so that the conduction between the semiconductor device and the substrate can be ensured. It becomes easy. Further, when forming a metal conductive layer around the third resin 8 by plating or the like, it is effective to roughen the periphery of the third resin 8 for the purpose of improving the adhesion between the layers. Two or more conductive layers 9 around the third resin 8 may be formed, for example, a Cu layer on the surface of the third resin 8 and an Sn / Pb solder layer around the Cu layer.

  The particle diameter of the conductive particles 5 varies, but in the case of the conductive particles 5 having the third resin 8, the average particle diameter is about 10 μm, and the thickness of the surrounding conductive layer is about 1 to 2 μm. However, when the bump pitch is fine, the particle size may be reduced. Further, with respect to the particle size, by mixing metal nanoparticles in the second resin 10 in addition to the main conductive particles, the effect of lowering the melting point of the nanoparticles makes it possible to reduce the gap between the conductive particles 5 when the second resin 10 is cured. Therefore, it becomes easy to obtain stable conduction characteristics. The amount of the conductive particles 5 added to the conductive resin bumps 7 differs depending on the particle shape, particle material, manufacturing method, and the like, and thus cannot be defined in general. In view of the volume ratio of the particles, it is desirable to be about 40%. The metal nanoparticles are generally Ag, but are not particularly limited thereto. The size is desirably 15 nm or less. The amount added is about 5 to 10 wt% (weight%).

  The first resin (insulating resin) 6 that protects between the electrodes needs to have a higher elastic modulus after curing than the conductive resin bumps 7. The glass transition point is preferably higher than the glass transition point of the conductive resin bump 7. As a result, even when the resin is used under conditions where the glass transition temperature of the resin is around, the relationship of “elastic modulus of the conductive resin bump 7 <elastic modulus of the first resin 6” is always maintained. It is possible to maintain a good state without depending on it.

  As for the material of the first resin 6, the second resin used for the conductive resin bump 7 as long as the above relationship (the elastic modulus of the conductive resin bump 7 <the elastic modulus of the first resin 6) is satisfied. 10 and the same system can be used. For the first resin 6, in order to further increase the difference in elastic modulus with the conductive resin bump 7, the elastic modulus after curing can be increased by mixing an inorganic filler or the like. The inorganic filler is generally spherical silica, and the average particle size is generally 2 to 3 μm, but is not limited thereto. The filling amount of the inorganic filler is adjusted so as to exceed the elastic modulus of the conductive resin bump 7, but it is desirable to suppress it to 65 wt% (weight%) or less for handling.

Next, an example of a mounting method for realizing the mounting structure of the present invention will be described in detail with reference to FIG.
First, as shown in FIG. 2A, a semiconductor device 1 and a wiring board 2 are prepared, and conductive resin bumps 7 are formed on the respective electrode pads. At this time, the bumps on the semiconductor device 1 side are completely cured, and the bumps on the wiring board 2 side are left uncured. Subsequently, the semiconductor device 1 and the wiring substrate 2 are aligned, the conductive resin bumps 7 on the wiring substrate 2 side are cured with a heating load applied, and the electrodes of the semiconductor device 1 and the wiring substrate 2 are connected. (FIG. 2B). The heating conditions at this time must be matched to the curing characteristics of the resin used, and if an epoxy resin is used, it is generally cured at 150 to 200 ° C., but considering low warpage and the like. In some cases, it may be cured at 150 ° C. or lower. Here, an important point for obtaining a good connection is to eliminate the warp between the semiconductor device 1 and the wiring board 2 as much as possible, and if there is a warp, the gap between the semiconductor device 1 and the wiring board 2 becomes constant. Since it is not maintained, a failure that is not connected tends to occur. As means for suppressing the warping, there are methods such as strongly sucking the semiconductor device 1 and the wiring board 2 at the time of mounting, and correcting the warping by applying a predetermined load at the time of mounting.
These countermeasures are preferably implemented even while the conductive resin bumps 7 of the wiring board 2 are cured. After the curing of the conductive resin bumps 7 on the wiring substrate 2 is completed and the electrical connection between the semiconductor device 1 and the wiring substrate 2 is established, the first resin 6 is inserted into the gap between the semiconductor device 1 and the wiring substrate 2 by a capillary tube. The mounting structure of the present invention is completed by filling using the phenomenon and curing the first resin 6 (FIG. 2C). At this time, the relationship of “elastic modulus of conductive resin bump 7 <elastic modulus of first resin 6” is established.

The above shows an example of mounting after the conductive resin bump 7 on the semiconductor device 1 side is cured, but both the conductive resin bumps 7 on the semiconductor device 1 side and the wiring board 2 side are uncured below. The mounting method in the case will be described.
First, as shown in FIG. 2A, a semiconductor device 1 and a wiring board 2 are prepared, and conductive resin bumps 7 are formed on the respective electrode pads. The bumps on the semiconductor device 1 side and the wiring substrate 2 side are left in an uncured state. 2 shows an example in which the conductive resin bumps 7 are formed on the electrode pads 3 and 4 of both the semiconductor device 1 and the wiring substrate 2, but in the case of this mounting method, the semiconductor device 1 or the wiring substrate 2 is used. Even when the conductive resin bumps 7 are formed only on one of the electrode pads 3 and 4 (not shown), mounting is possible.

  Next, when mounting the semiconductor device 1 as it is, after the alignment of the semiconductor device 1 and the wiring substrate 2, the mounting height position control function of the mounter is used to adjust the bumps on the semiconductor device 1 side and the wiring substrate 2 side. Conductive resin to the extent that uncured conductive resin bumps 7 are not crushed at least due to the weight of the semiconductor device 1 while the bumps are securely connected and held at such a height that the bumps are crushed and adjacent bumps are not short-circuited. The bump 7 is cured.

  As another method, by mounting the semiconductor device so that uncured bumps are not crushed by the weight of the semiconductor device 1, the mounter can be mounted without a height position control function. is there. For example, dummy bumps that can secure the height by supporting the weight of the semiconductor device 1 on a pad or the like that does not need to ensure conduction may be formed in advance. The dummy bumps can be used regardless of whether they are metallic or non-metallic if they do not collapse when a load is applied.

  The curing temperature of the conductive resin bump 7 is generally 150 to 200 ° C., but when the metal on the surface of the conductive particle 5 is melted and connected, the conductive resin bump 7 is heated at a temperature equal to or higher than the melting temperature of the metal to be conductive. It is necessary to bond between the particles 5. As an example, in the case of Pb / Sn eutectic solder, the melting point is 183 ° C., so it is preferable to heat to about 200 ° C.

  After the conductive resin bumps 7 on the semiconductor device 1 and the wiring board 2 are cured and the electrical connection between the semiconductor device 1 and the wiring board 2 is established, the first gap is formed in the gap between the semiconductor device 1 and the wiring board 2. The mounting structure of the present invention is completed by filling the resin 6 using the capillary phenomenon and curing the first resin 6 (FIG. 2C).

  In this method, the conductive resin bump 7 and the wiring board 2 on the semiconductor device 1 side are formed by forming the conductive resin bump 7 on both the electrode pad 3 on the semiconductor device 1 side and the electrode pad 4 on the wiring board 2 side. Since the curing with the conductive resin bump 7 on the side is performed at the same time, both the bumps are easily integrated, and it is easy to obtain good conduction performance. In particular, in the case of a structure in which the conductive material around the conductive particles 5 is melted, it is possible to mount without wet defects between the particle surfaces at the boundary between the bumps on the semiconductor device 1 side and the wiring substrate 2 side by using this mounting method. An extremely low resistance and low elasticity bump structure can be realized.

Next, an example of another mounting method for realizing the mounting structure of the present invention will be described in detail with reference to FIG.
First, as shown in FIG. 3A, a semiconductor device 1 and a wiring board 2 are prepared, and conductive resin bumps 7 are formed on the respective electrode pads. At this time, the bumps on the semiconductor device 1 side are completely cured, and the bumps on the wiring board 2 side are kept slightly cured. For example, in the case of an epoxy resin, it is necessary to heat at 150 ° C. for about 1 to 2 minutes.
Next, a predetermined amount of the first resin 6 is applied onto the wiring board 2 (FIG. 3B). At this time, the conductive resin bump 7 on the side of the wiring board 1 and the first resin 6 are mixed unless the step of curing the conductive resin bump 7 on the side of the wiring board 2 is performed as described above. In many cases, a good connection cannot be established.
Subsequently, the semiconductor device 1 and the wiring substrate 2 are aligned, and the first resin 6 and the conductive resin bump 7 on the wiring substrate side are cured in a state where a heating load is applied. The electrodes are connected to complete the mounting structure of the present invention (FIG. 3C). At this time, the relationship of “elastic modulus of conductive resin bump 7 <elastic modulus of first resin 6” is established.

  In the case of this method, it is possible to realize the mounting structure of the semiconductor device 1 that is in a good conductive state and has the elastic modulus of the conductive resin bump 7 <the elastic modulus of the first resin 6, and at the same time when the LSI is mounted. Since it has already been sealed with the first resin, it is possible to prevent the joint from being destroyed by the stress generated during the assembly process. Further, the conductive resin applied to the wiring board 2 side is cured to make a difference in resin viscosity, and then the insulating resin is applied onto the wiring board 2 so that the conductive resin and the insulating resin are mixed. It becomes possible to prevent this.

  As a method for further increasing the elastic modulus of the first resin 6 in order to satisfy the relationship of the elastic modulus of the conductive resin bump 7 <the elastic modulus of the first resin 6, a large amount of silica filler is used as the first resin. It is common to mix in. However, in this case, the viscosity of the first resin increases, so that it becomes difficult to fill the gap between the semiconductor device and the substrate with the first resin, and this is a problem for obtaining this structure. In the case of applying the mounting method, it is not necessary to fill the narrow gap with high-viscosity resin by applying the insulating resin on the wiring board 2 in advance, and the elastic modulus of the conductive resin bumps 7 Thus, a structure satisfying the relationship of the elastic modulus of one resin 6 can be easily realized.

  When the semiconductor device 1 and the electrodes 3 and 4 of the wiring board 2 are connected to face each other like a flip chip or CSP, even when thermal stress is generated due to the difference in thermal expansion coefficient between the semiconductor device 1 and the wiring board 2, By adopting a mounting structure that satisfies the relationship of the elastic modulus of the conductive resin bump 7 <the elastic modulus of the first resin 6, a mounting structure that can ensure high reliability can be realized. The reason is that, in the case of this structure, stress is easily applied to the first resin 6 side having a high elastic modulus, so that the stress applied to the conductive resin bump 7 portion having a low elastic modulus is small. As a result, the life of the bump which is the conductive portion is prolonged, so that high reliability can be ensured. Furthermore, as a material development issue for the conductive resin bump 7, there is compatibility between low resistance and high adhesion strength, but if this mounting structure is applied, a conductive resin with low adhesion strength but excellent electrical conductivity is used. Even in this case, it is possible to ensure high reliability by increasing the adhesion strength of the first resin 6 that is easily subjected to thermal stress, and ensuring high reliability, which was a problem when the conductive resin bumps 7 were used. And ensuring good conduction can be realized.

  In addition, the said embodiment is an example of suitable implementation of this invention, and various deformation | transformation are possible for this invention, without being limited to this.

It is a schematic diagram which shows the cross-section of the mounting structure of the semiconductor device concerning suitable embodiment of this invention, and the cross-section of the resin core particle. It is a schematic diagram which shows the mounting method of the semiconductor device concerning suitable embodiment of this invention. It is a schematic diagram which shows the other mounting method of the semiconductor device concerning suitable embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor device 2 Wiring board 3 Electrode pad (LSI side)
4 Electrode pads (wiring board side)
5 conductive particles 6 first resin (insulating resin)
7 Conductive resin bumps 8 Third resin (resin core)
9 Conductive layer 10 Second resin (forms conductive resin)

Claims (4)

In a semiconductor device in which a semiconductor element is electrically connected to a wiring board via a conductive bump,
Between the semiconductor element and the wiring board is sealed with a first resin,
The bump is composed of a plurality of conductive particles and a second resin,
One particle of the plurality of conductive particles electrically connected to any one of the semiconductor element and the wiring board passes through another particle of the plurality of conductive particles, and the semiconductor element And electrically connected to either one of the wiring boards,
At least a part of the surface of the conductive particles is covered with at least one conductive material layer, and the central part of the conductive particles is made of a third resin that is a thermosetting resin,
The semiconductor device , wherein the conductive particles have an average particle size of about 10 μm and the conductive material layer has a thickness of 1 to 2 μm . The semiconductor device according to claim 1, wherein an elastic modulus of the first resin is larger than an elastic modulus of the bump. The second resin includes a component that removes an oxide film of the conductive material layer,
The second resin includes nanoparticles,
The semiconductor device according to claim 1, wherein an inorganic filler is mixed in the first resin . Supplying a conductive first bump to the connection electrode of the semiconductor element;
Supplying a conductive second bump to the connection electrode of the wiring board;
At least a part of the plurality of conductive particles included in the first bump and the second bump is temporarily melted by heating, and one particle of the plurality of conductive particles is converted into the semiconductor element and the semiconductor element. Electrically connecting to any one of the wiring boards and electrically connecting to the other of the semiconductor element and the wiring board via other particles of the plurality of conductive particles. ,
At least a part of the surface of the conductive particles is covered with at least one conductive material layer, and the central part of the conductive particles is made of a third resin that is a thermosetting resin,
A method of manufacturing a semiconductor device , wherein the conductive particles have an average particle size of about 10 μm and the conductive material layer has a thickness of 1 to 2 μm .

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