JP5232801B2 - チャンバ及び成膜装置 - Google Patents
チャンバ及び成膜装置 Download PDFInfo
- Publication number
- JP5232801B2 JP5232801B2 JP2009546239A JP2009546239A JP5232801B2 JP 5232801 B2 JP5232801 B2 JP 5232801B2 JP 2009546239 A JP2009546239 A JP 2009546239A JP 2009546239 A JP2009546239 A JP 2009546239A JP 5232801 B2 JP5232801 B2 JP 5232801B2
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- rib
- wall surface
- substrate
- reinforcing member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000003014 reinforcing effect Effects 0.000 claims description 67
- 239000000758 substrate Substances 0.000 claims description 61
- 238000005304 joining Methods 0.000 claims description 39
- 238000009434 installation Methods 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 description 23
- 238000010586 diagram Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000003466 welding Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
2 チャンバ部
3 補強部材
4 基板キャリア
11 ロードロック室
12 加熱室
13 第1成膜室
14 第2成膜室
31 リブ部材
32 接合部材
S 基板
Claims (9)
- 基板が搬入され、基板に対して所定の処理が行われるチャンバ部と、チャンバ部の外壁面に設けられた着脱可能な補強部材とを備え、
前記補強部材が、前記外壁面に着脱可能に取り付けられたリブ部材であり、
前記補強部材が、さらに前記外壁面に着脱可能に取り付けた板状の接合部材を備え、
前記リブ部材が、接合部材を介して前記外壁面に設けられたことを特徴とする真空チャンバ。 - 前記補強部材は、前記外壁面のうち、大気に接触する面に取り付けられたことを特徴とする請求項1に記載の真空チャンバ。
- 前記接合部材は、接合部材が設けられている外壁面において、チャンバ部内で所定の処理を行うための機能部材が設けられていない全ての領域を覆うように構成されていることを特徴とする請求項1又は2に記載の真空チャンバ。
- 前記チャンバ部は、基板キャリアにより略垂直に保持された被処理基板に対し所定の処理を行うことができるように構成されていることを特徴とする請求項1〜3のいずれかに記載の真空チャンバ。
- 前記チャンバ部の壁面の一部に開口を設け、この開口を介して前記補強部材に着脱自在にマグネットが取り付けられていることを特徴とする請求項1〜4のいずれかに記載の真空チャンバ。
- 前記リブ部材が、互いに交差する複数の縦リブ部材及び横リブ部材から構成され、
この縦リブ部材及び横リブ部材により構成される空間にクレーンが設置され固定されていることを特徴とする請求項1〜5のいずれかに記載の真空チャンバ。 - 前記クレーンは、前記縦リブ部材及び横リブ部材により構成される空間に設置され固定された設置部と、この設置部に接続されている支持部と、この支持部を軸中心として回動自在に接続されている腕部と、この腕部の先端部に、吊下部及び線部材を介して設けられた取り付け部とからなることを特徴とする請求項6に記載の真空チャンバ。
- 複数の真空チャンバを備え、各真空チャンバのチャンバ部内で基板に対して所定の処理を行う成膜装置であって、
各チャンバ部は、各チャンバ部の外壁面に着脱可能な補強部材を備え、
前記補強部材が、前記外壁面に着脱可能に取り付けられたリブ部材であり、
前記補強部材が、さらに前記外壁面に着脱可能に取り付けた板状の接合部材を備え、
前記リブ部材が、接合部材を介して前記外壁面に設けられたことを特徴とする成膜装置。 - 前記チャンバ部の外壁面が、チャンバ部の天井面、底面、及び他の真空チャンバが接続されていない側面であることを特徴とする請求項8に記載の成膜装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009546239A JP5232801B2 (ja) | 2007-12-14 | 2008-12-12 | チャンバ及び成膜装置 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007323783 | 2007-12-14 | ||
JP2007323783 | 2007-12-14 | ||
JP2009546239A JP5232801B2 (ja) | 2007-12-14 | 2008-12-12 | チャンバ及び成膜装置 |
PCT/JP2008/072625 WO2009078351A1 (ja) | 2007-12-14 | 2008-12-12 | チャンバ及び成膜装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2009078351A1 JPWO2009078351A1 (ja) | 2011-04-28 |
JP5232801B2 true JP5232801B2 (ja) | 2013-07-10 |
Family
ID=40795467
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009546239A Active JP5232801B2 (ja) | 2007-12-14 | 2008-12-12 | チャンバ及び成膜装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8677925B2 (ja) |
JP (1) | JP5232801B2 (ja) |
KR (1) | KR101309363B1 (ja) |
CN (2) | CN101896634B (ja) |
TW (1) | TWI404158B (ja) |
WO (1) | WO2009078351A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101057577B1 (ko) | 2009-07-31 | 2011-08-17 | 박웅기 | 내압챔버 |
JP5583935B2 (ja) * | 2009-08-19 | 2014-09-03 | 株式会社アルバック | インライン型基板処理装置の製造システム及び製造方法 |
KR101932578B1 (ko) * | 2010-04-30 | 2018-12-28 | 어플라이드 머티어리얼스, 인코포레이티드 | 수직 인라인 화학기상증착 시스템 |
KR101363064B1 (ko) * | 2012-05-22 | 2014-02-14 | 박종민 | 진공 챔버 구조 |
KR20150018910A (ko) * | 2013-04-22 | 2015-02-25 | 주식회사 테라세미콘 | 클러스터형 배치식 기판처리 시스템 |
JP6719290B2 (ja) * | 2016-06-22 | 2020-07-08 | 東京エレクトロン株式会社 | 補強構造体、真空チャンバー、およびプラズマ処理装置 |
US20180213656A1 (en) * | 2017-01-20 | 2018-07-26 | Canon Kabushiki Kaisha | Decompression container, processing apparatus, processing system, and method of producing flat panel display |
JP2024013863A (ja) * | 2022-07-21 | 2024-02-01 | キヤノントッキ株式会社 | 真空チャンバー及び成膜装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004089872A (ja) * | 2002-08-30 | 2004-03-25 | Tsukishima Kikai Co Ltd | 真空装置 |
JP2004176150A (ja) * | 2002-11-28 | 2004-06-24 | Shin Meiwa Ind Co Ltd | 真空成膜装置 |
JP2006283096A (ja) * | 2005-03-31 | 2006-10-19 | Tokyo Electron Ltd | 処理チャンバおよび処理装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4498378A (en) * | 1983-09-06 | 1985-02-12 | Knud Simonsen Industries Limited | Vacuum container for meat products |
US4558388A (en) * | 1983-11-02 | 1985-12-10 | Varian Associates, Inc. | Substrate and substrate holder |
US5100527A (en) * | 1990-10-18 | 1992-03-31 | Viratec Thin Films, Inc. | Rotating magnetron incorporating a removable cathode |
US5783492A (en) * | 1994-03-04 | 1998-07-21 | Tokyo Electron Limited | Plasma processing method, plasma processing apparatus, and plasma generating apparatus |
JPH07251058A (ja) * | 1994-03-14 | 1995-10-03 | Tokyo Electron Ltd | 多角形耐圧容器及びその製造方法 |
JPH0864542A (ja) | 1994-08-25 | 1996-03-08 | Plasma Syst:Kk | 半導体処理装置用真空チャンバーおよびその製造方法 |
JP3694388B2 (ja) * | 1997-05-26 | 2005-09-14 | 株式会社日立国際電気 | 半導体製造装置 |
JP4679369B2 (ja) * | 2004-01-13 | 2011-04-27 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
JP4791110B2 (ja) * | 2005-09-02 | 2011-10-12 | 東京エレクトロン株式会社 | 真空チャンバおよび真空処理装置 |
-
2008
- 2008-12-12 US US12/744,676 patent/US8677925B2/en active Active
- 2008-12-12 KR KR1020107013828A patent/KR101309363B1/ko active IP Right Grant
- 2008-12-12 CN CN2008801205389A patent/CN101896634B/zh active Active
- 2008-12-12 JP JP2009546239A patent/JP5232801B2/ja active Active
- 2008-12-12 CN CN2012102665674A patent/CN102751220A/zh active Pending
- 2008-12-12 WO PCT/JP2008/072625 patent/WO2009078351A1/ja active Application Filing
- 2008-12-15 TW TW097148774A patent/TWI404158B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004089872A (ja) * | 2002-08-30 | 2004-03-25 | Tsukishima Kikai Co Ltd | 真空装置 |
JP2004176150A (ja) * | 2002-11-28 | 2004-06-24 | Shin Meiwa Ind Co Ltd | 真空成膜装置 |
JP2006283096A (ja) * | 2005-03-31 | 2006-10-19 | Tokyo Electron Ltd | 処理チャンバおよび処理装置 |
Also Published As
Publication number | Publication date |
---|---|
TW200941618A (en) | 2009-10-01 |
CN101896634B (zh) | 2012-08-29 |
KR101309363B1 (ko) | 2013-09-17 |
JPWO2009078351A1 (ja) | 2011-04-28 |
KR20100084700A (ko) | 2010-07-27 |
TWI404158B (zh) | 2013-08-01 |
CN101896634A (zh) | 2010-11-24 |
WO2009078351A1 (ja) | 2009-06-25 |
CN102751220A (zh) | 2012-10-24 |
US8677925B2 (en) | 2014-03-25 |
US20100251960A1 (en) | 2010-10-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5232801B2 (ja) | チャンバ及び成膜装置 | |
TWI579394B (zh) | 用於基板之載具及組裝該載具之方法 | |
JP5047545B2 (ja) | 浮上搬送ユニット | |
US8943669B2 (en) | Assembly method for vacuum processing apparatus | |
JP2007073542A (ja) | 真空チャンバおよび真空処理装置 | |
KR101564613B1 (ko) | Cfrp 파이프와 금속 파이프의 결합장치 및 이에 의한 결합방법 | |
JP2009073646A (ja) | 浮上方法及び浮上ユニット | |
TWI307328B (en) | Prozesssystem sowie vorrichtung zum transport von substraten | |
US20130316095A1 (en) | Retaining device for substrates and method for coating a substrate | |
JP7133928B2 (ja) | 減圧容器、処理装置、処理システム及びフラットパネルディスプレイの製造方法 | |
JP2008249964A (ja) | 表示基板洗浄用キャリアおよび表示基板洗浄方法 | |
JP2009149389A (ja) | 浮上ユニット及びそれを有する装置 | |
JP4885107B2 (ja) | 蒸着装置 | |
KR102238909B1 (ko) | 기판 반송 로봇의 승강부 프레임 | |
CN104425335A (zh) | 用于固持衬底的设备 | |
KR20200029799A (ko) | 컨테이너선의 셀가이드 구조체 제작 및 설치 공법 | |
US20110058919A1 (en) | Mechanical modularity chambers | |
KR20040012461A (ko) | 평 패널 제조 설비용 패널 반송 배기 카트 | |
JP2009032984A (ja) | 浮上搬送ユニット | |
JP2017020097A (ja) | スパッタ装置及びスパッタ装置の駆動方法 | |
JP2013139338A (ja) | 浮上搬送ユニット | |
JP6678484B2 (ja) | 炉枠取付方法、および、該方法に用いる治具 | |
EP3380253B1 (en) | Interchangable center section for glass coating hood | |
JP4710498B2 (ja) | 高周波給電用導体 | |
JP6457643B2 (ja) | 支持ピン及び成膜装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121107 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121228 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130313 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130325 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160329 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5232801 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |