JP5230434B2 - 空孔率を減少させる方法 - Google Patents
空孔率を減少させる方法 Download PDFInfo
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- JP5230434B2 JP5230434B2 JP2008538958A JP2008538958A JP5230434B2 JP 5230434 B2 JP5230434 B2 JP 5230434B2 JP 2008538958 A JP2008538958 A JP 2008538958A JP 2008538958 A JP2008538958 A JP 2008538958A JP 5230434 B2 JP5230434 B2 JP 5230434B2
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- solution
- article
- nitrate
- porous outer
- sealant
- Prior art date
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- 239000000243 solution Substances 0.000 claims description 101
- 238000000034 method Methods 0.000 claims description 68
- 239000011148 porous material Substances 0.000 claims description 39
- 239000000565 sealant Substances 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 239000002244 precipitate Substances 0.000 claims description 27
- 239000007787 solid Substances 0.000 claims description 27
- 238000007789 sealing Methods 0.000 claims description 19
- 238000005507 spraying Methods 0.000 claims description 19
- 239000007921 spray Substances 0.000 claims description 16
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 15
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 15
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 15
- 239000000908 ammonium hydroxide Substances 0.000 claims description 15
- 238000001764 infiltration Methods 0.000 claims description 15
- NGDQQLAVJWUYSF-UHFFFAOYSA-N 4-methyl-2-phenyl-1,3-thiazole-5-sulfonyl chloride Chemical compound S1C(S(Cl)(=O)=O)=C(C)N=C1C1=CC=CC=C1 NGDQQLAVJWUYSF-UHFFFAOYSA-N 0.000 claims description 14
- 239000000919 ceramic Substances 0.000 claims description 12
- 230000008595 infiltration Effects 0.000 claims description 12
- 239000002585 base Substances 0.000 claims description 11
- 150000003839 salts Chemical class 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000012266 salt solution Substances 0.000 claims description 10
- HSJPMRKMPBAUAU-UHFFFAOYSA-N cerium(3+);trinitrate Chemical compound [Ce+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O HSJPMRKMPBAUAU-UHFFFAOYSA-N 0.000 claims description 8
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 8
- UUZZMWZGAZGXSF-UHFFFAOYSA-N peroxynitric acid Chemical compound OON(=O)=O UUZZMWZGAZGXSF-UHFFFAOYSA-N 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052727 yttrium Inorganic materials 0.000 claims description 6
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 6
- 239000003637 basic solution Substances 0.000 claims description 5
- 239000002105 nanoparticle Substances 0.000 claims description 5
- 239000000395 magnesium oxide Substances 0.000 claims description 4
- 239000007795 chemical reaction product Substances 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 239000002002 slurry Substances 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- NFFMHERIXPJBKX-UHFFFAOYSA-N OO[N+](=O)[O-].[Ce] Chemical compound OO[N+](=O)[O-].[Ce] NFFMHERIXPJBKX-UHFFFAOYSA-N 0.000 claims description 2
- NNUCWFNUODUGAA-UHFFFAOYSA-N [N+](=O)(OO)[O-].[La] Chemical compound [N+](=O)(OO)[O-].[La] NNUCWFNUODUGAA-UHFFFAOYSA-N 0.000 claims description 2
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 2
- 150000002603 lanthanum Chemical class 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- FYDKNKUEBJQCCN-UHFFFAOYSA-N lanthanum(3+);trinitrate Chemical compound [La+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O FYDKNKUEBJQCCN-UHFFFAOYSA-N 0.000 claims 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
- PBRJZIDHKDLBRO-UHFFFAOYSA-N hydroxy nitrate yttrium Chemical compound [Y].OO[N+](=O)[O-] PBRJZIDHKDLBRO-UHFFFAOYSA-N 0.000 claims 1
- 238000000576 coating method Methods 0.000 description 50
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 41
- 239000011248 coating agent Substances 0.000 description 32
- 230000035515 penetration Effects 0.000 description 25
- 238000012360 testing method Methods 0.000 description 24
- 239000000758 substrate Substances 0.000 description 18
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 14
- 230000007797 corrosion Effects 0.000 description 14
- 238000005260 corrosion Methods 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 13
- 239000007789 gas Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 239000003153 chemical reaction reagent Substances 0.000 description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 10
- 239000002253 acid Substances 0.000 description 9
- 239000007788 liquid Substances 0.000 description 9
- 239000007864 aqueous solution Substances 0.000 description 8
- 150000001768 cations Chemical class 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- 239000012530 fluid Substances 0.000 description 7
- 238000011065 in-situ storage Methods 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 238000005524 ceramic coating Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 238000011109 contamination Methods 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229930195733 hydrocarbon Natural products 0.000 description 4
- 150000002430 hydrocarbons Chemical class 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- -1 polyethylene Polymers 0.000 description 4
- 239000007858 starting material Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- OERNJTNJEZOPIA-UHFFFAOYSA-N zirconium nitrate Chemical compound [Zr+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O OERNJTNJEZOPIA-UHFFFAOYSA-N 0.000 description 4
- 241000588731 Hafnia Species 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000007750 plasma spraying Methods 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 150000003746 yttrium Chemical class 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000004880 explosion Methods 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052574 oxide ceramic Inorganic materials 0.000 description 2
- 239000011224 oxide ceramic Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 2
- 150000003754 zirconium Chemical class 0.000 description 2
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000851 Alloy steel Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 150000000703 Cerium Chemical class 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910000684 Cobalt-chrome Inorganic materials 0.000 description 1
- 241000446313 Lamella Species 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- WAIPAZQMEIHHTJ-UHFFFAOYSA-N [Cr].[Co] Chemical compound [Cr].[Co] WAIPAZQMEIHHTJ-UHFFFAOYSA-N 0.000 description 1
- GUKWVLRUHODQQG-UHFFFAOYSA-M [N+](=O)([O-])[O-].O[Y+2].[N+](=O)([O-])[O-] Chemical compound [N+](=O)([O-])[O-].O[Y+2].[N+](=O)([O-])[O-] GUKWVLRUHODQQG-UHFFFAOYSA-M 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- LGLOITKZTDVGOE-UHFFFAOYSA-N boranylidynemolybdenum Chemical compound [Mo]#B LGLOITKZTDVGOE-UHFFFAOYSA-N 0.000 description 1
- 229910002110 ceramic alloy Inorganic materials 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000010952 cobalt-chrome Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000010285 flame spraying Methods 0.000 description 1
- 238000005246 galvanizing Methods 0.000 description 1
- 229920006270 hydrocarbon resin Polymers 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 150000002484 inorganic compounds Chemical group 0.000 description 1
- 229910001410 inorganic ion Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 229910017053 inorganic salt Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000004816 latex Substances 0.000 description 1
- 229920000126 latex Polymers 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 229910000601 superalloy Inorganic materials 0.000 description 1
- 239000012720 thermal barrier coating Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- DEXZEPDUSNRVTN-UHFFFAOYSA-K yttrium(3+);trihydroxide Chemical compound [OH-].[OH-].[OH-].[Y+3] DEXZEPDUSNRVTN-UHFFFAOYSA-K 0.000 description 1
- WUVRZBFIXJWTGS-UHFFFAOYSA-N yttrium(3+);trinitrate;hydrate Chemical compound O.[Y+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O WUVRZBFIXJWTGS-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 150000003755 zirconium compounds Chemical class 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/18—After-treatment, e.g. pore-sealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
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Description
本発明は、一部は、物品の多孔質外表面の少なくとも一部の細孔を封孔するための方法に関し、前記方法は、(i)前記物品の多孔質外表面上に第1溶液を塗布すること、(ii)多孔質外表面の少なくとも一部に前記第1溶液を浸透させること、(iii)前記物品の多孔質外表面上に第2溶液を塗布すること、(iv)多孔質外表面の少なくとも一部に前記第2溶液を浸透させること、及び(v)浸透した第1溶液と浸透した第2溶液とを反応させ、それにより、浸透後固体析出物を形成し、前記浸透後固体析出物は、前記物品の多孔質外表面の少なくとも一部の細孔を封孔することを含む。
本発明に従って、浸透した無機化学物質の塩の溶液からのその場析出物を使用して、溶射被覆又は焼結物品を有する物品内の相互に連結された細孔の内部に相溶性固体化合物を形成し、それにより、物品内の流体(液体又は気体)による浸透及び腐食などの細孔関連の問題を減少又は消失させる。この細孔関連問題は、さまざまな金属、合金及びセラミック製品に当てはまり、プラズマ及び化学蒸着チャンバにおいて、及び移動する汚染物質金属カチオンが存在することを回避しなければならない静電チャックにおいて、エレクトロニクス産業で使用される被覆及びセラミックにおいて、特に当てはまる。細孔関連の問題は、また、酸化物の表面薄膜が陽極成長する間に、自然に形成される垂直チャネルの形態をしている、表面から基板までの固有の微細孔を含有する陽極酸化において生じる。
本発明の例示的な封孔方法は以下の通りである:
(a)第1反応性溶液を調製すること;
(b)この第1反応性溶液を、封孔されるべき物品の多孔質外表面上に塗布すること;
(c)この第1反応性溶液が前記物品の多孔質外表面に浸透することができるようにすること;
(d)第2反応性溶液を、封孔されるべき物品の多孔質外表面上に塗布すること;
(e)この第2反応性溶液が前記物品の多孔質外表面に浸透することができるようにすること;
(f)この第1及び第2反応性の浸透した溶液を反応させ、それにより、浸透後固体析出物を形成し、前記浸透後固体析出物は、前記物品の多孔質外表面の少なくとも一部の細孔を封孔すること;及び
(g)この被覆物品を適切な温度範囲で加熱し、この物品から水を実質的に除去し、温度が十分高い場合は、浸透後固体析出物を酸化物に変換させること。
Claims (15)
- 物品の多孔質外表面の少なくとも一部の細孔を封孔するための方法であって、(i)前記物品の多孔質外表面上に第1溶液を塗布すること、(ii)多孔質外表面の少なくとも一部に前記第1溶液を浸透させること、(iii)前記物品の多孔質外表面上に第2溶液を塗布すること、(iv)多孔質外表面の少なくとも一部に前記第2溶液を浸透させること、及び(v)浸透した第1溶液と浸透した第2溶液とを反応させ、それにより、浸透後固体析出物を形成し、前記浸透後固体析出物が、前記物品の多孔質外表面の少なくとも一部の細孔を封孔することを含む方法であり、
浸透後固体析出物が、ヒドロキシ硝酸イットリウム、ヒドロキシ硝酸セリウム又はヒドロキシ硝酸ランタンを含む、方法。 - 物品の多孔質外表面の少なくとも一部の細孔を封孔するための方法であって、(i)前記物品の多孔質外表面上にシーラント溶液を塗布すること、(ii)多孔質外表面の少なくとも一部に前記シーラント溶液を浸透させること、及び(iii)浸透したシーラント溶液を反応させ、それにより、浸透後固体析出物を形成し、前記浸透後固体析出物が、前記物品の多孔質外表面の少なくとも一部の細孔を封孔することを含む方法であり、
シーラント溶液が、硝酸イットリウム、硝酸セリウム又は硝酸ランタンから選択される金属塩及び水酸化アンモニウム、水酸化カリウム又は水酸化ナトリウムから選択される塩基を含む、方法。 - 請求項1に記載の方法によって、多孔質外表面の少なくとも一部が、金属塩と塩基との反応生成物を含むシーラントにより封孔されている、前記多孔質外表面を有する物品。
- 浸透後固体析出物を形成した後、前記物品を加熱することをさらに含む、請求項1又は2に記載の方法。
- (i)第1溶液が塩基性溶液を含み、第2溶液が金属塩溶液を含むか、又は(ii)第1溶液が金属塩溶液を含み、第2溶液が塩基性溶液を含む、請求項1に記載の方法。
- (i)第1溶液が、硝酸イットリウム、硝酸セリウム又は硝酸ランタンから選択される金属塩を含み、第2溶液が、水酸化アンモニウム、水酸化カリウム又は水酸化ナトリウムから選択される塩基を含むか、又は(ii)第1溶液が、水酸化アンモニウム、水酸化カリウム又は水酸化ナトリウムから選択される塩基を含み、第2溶液が、硝酸イットリウム、硝酸セリウム又は硝酸ランタンから選択される金属塩を含む、請求項1に記載の方法。
- シーラント溶液が、金属塩溶液及び塩基性溶液を含む、請求項2に記載の方法。
- 浸透後固体析出物が、ヒドロキシ硝酸イットリウム、ヒドロキシ硝酸セリウム又はヒドロキシ硝酸ランタンを含む、請求項2に記載の方法。
- ナノ粒子又はスラリが、前記浸透後固体析出物に結合されている、請求項1又は2に記載の方法。
- 物品が、溶射被覆を有する金属物品又は焼結された多孔質金属若しくはセラミック物品を含む、請求項1又は2に記載の方法。
- 物品が、溶射被覆を有する金属物品又は焼結された多孔質金属若しくはセラミック物品を含む、請求項3に記載の物品。
- 物品が、集積回路構成部品の製造に使用されるチャンバ又は前記チャンバの構成部品を含む、請求項1又は2に記載の方法。
- 物品が、集積回路構成部品の製造に使用されるチャンバ又は前記チャンバの構成部品を含む、請求項3に記載の物品。
- 溶射被覆物品又は焼結物品を含む、請求項3に記載の物品。
- 溶射被覆物品が、酸化イットリウム、酸化ジルコニウム、酸化マグネシウム、酸化セリウム、酸化アルミニウム、又は周期表の2Aから8B族までとランタン系列元素の酸化物により被覆され、約5.0%を超えない空孔率を有する、請求項14に記載の物品。
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US11/546,388 US7799384B2 (en) | 2005-11-02 | 2006-10-12 | Method of reducing porosity in thermal spray coated and sintered articles |
PCT/US2006/042377 WO2007055955A2 (en) | 2005-11-02 | 2006-10-31 | Method of reducing porosity |
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CN104761943B (zh) * | 2015-04-15 | 2017-02-22 | 西安科技大学 | 一种镁合金耐蚀涂料及其应用 |
US9970305B2 (en) * | 2015-09-18 | 2018-05-15 | General Electric Company | Treatment process, oxide-forming treatment composition, and treated component |
CN106048505B (zh) * | 2016-07-26 | 2018-08-24 | 中国科学院兰州化学物理研究所 | 一种改善热喷涂Al2O3陶瓷涂层摩擦磨损性能的方法 |
KR102066271B1 (ko) * | 2017-04-18 | 2020-01-14 | 단국대학교 천안캠퍼스 산학협력단 | 정전척 실링방법 |
CN107740166A (zh) * | 2017-11-24 | 2018-02-27 | 南宁可煜能源科技有限公司 | 一种太阳能板铝边框的微弧氧化方法 |
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EP1963550B1 (en) | 2018-10-31 |
US8053072B2 (en) | 2011-11-08 |
US20070098975A1 (en) | 2007-05-03 |
US7799384B2 (en) | 2010-09-21 |
US20090087642A1 (en) | 2009-04-02 |
CN101346495A (zh) | 2009-01-14 |
KR20080070050A (ko) | 2008-07-29 |
MY151436A (en) | 2014-05-30 |
EP1963550A2 (en) | 2008-09-03 |
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KR101434681B1 (ko) | 2014-08-26 |
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