JP5227563B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5227563B2
JP5227563B2 JP2007268751A JP2007268751A JP5227563B2 JP 5227563 B2 JP5227563 B2 JP 5227563B2 JP 2007268751 A JP2007268751 A JP 2007268751A JP 2007268751 A JP2007268751 A JP 2007268751A JP 5227563 B2 JP5227563 B2 JP 5227563B2
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layer
laser beam
laser
irradiated
substrate
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JP2007268751A
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Japanese (ja)
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JP2008135717A5 (enExample
JP2008135717A (ja
Inventor
幸一郎 田中
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Laser Beam Processing (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2007268751A 2006-10-26 2007-10-16 半導体装置の作製方法 Expired - Fee Related JP5227563B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007268751A JP5227563B2 (ja) 2006-10-26 2007-10-16 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006290771 2006-10-26
JP2006290771 2006-10-26
JP2007268751A JP5227563B2 (ja) 2006-10-26 2007-10-16 半導体装置の作製方法

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JP2008135717A JP2008135717A (ja) 2008-06-12
JP2008135717A5 JP2008135717A5 (enExample) 2010-10-21
JP5227563B2 true JP5227563B2 (ja) 2013-07-03

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JP2007268751A Expired - Fee Related JP5227563B2 (ja) 2006-10-26 2007-10-16 半導体装置の作製方法

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Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010056541A (ja) * 2008-07-31 2010-03-11 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4973698B2 (ja) * 2009-06-30 2012-07-11 カシオ計算機株式会社 薄膜トランジスタ及び薄膜トランジスタの製造方法
KR101396096B1 (ko) 2009-10-09 2014-05-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR102065330B1 (ko) * 2009-10-16 2020-01-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치의 제작 방법
CN102648525B (zh) 2009-12-04 2016-05-04 株式会社半导体能源研究所 显示装置
JP2013074175A (ja) * 2011-09-28 2013-04-22 Nagase & Co Ltd 電気部品の製造方法
JP6015389B2 (ja) * 2012-11-30 2016-10-26 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム
JP5624174B2 (ja) * 2013-05-29 2014-11-12 三星ダイヤモンド工業株式会社 被加工物の加工方法、被加工物の分割方法およびレーザー加工装置
JP6348051B2 (ja) * 2014-11-19 2018-06-27 キヤノンマシナリー株式会社 レーザ加工方法、レーザ加工装置、およびレーザ加工品
JP6885310B2 (ja) * 2017-11-28 2021-06-09 トヨタ自動車株式会社 電極シート製造装置および蓄電装置の製造方法
JP7043999B2 (ja) 2018-07-11 2022-03-30 日本電信電話株式会社 ハイブリッド光デバイスの溝作製方法およびハイブリッド光デバイス
CN113707546A (zh) * 2021-08-16 2021-11-26 成都莱普科技有限公司 一种选择性激光退火形成半导体器件欧姆接触的方法
CN114975545B (zh) * 2022-05-20 2025-04-25 深圳市华星光电半导体显示技术有限公司 一种显示面板及其制备方法、显示装置
JP7461988B2 (ja) 2022-06-22 2024-04-04 シャープディスプレイテクノロジー株式会社 アクティブマトリクス基板および表示装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4986332B2 (ja) * 2000-03-21 2012-07-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4754848B2 (ja) * 2004-03-03 2011-08-24 株式会社半導体エネルギー研究所 半導体装置の作製方法

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JP2008135717A (ja) 2008-06-12

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