JP5220237B2 - 基板の粗面化方法 - Google Patents

基板の粗面化方法 Download PDF

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Publication number
JP5220237B2
JP5220237B2 JP2012508212A JP2012508212A JP5220237B2 JP 5220237 B2 JP5220237 B2 JP 5220237B2 JP 2012508212 A JP2012508212 A JP 2012508212A JP 2012508212 A JP2012508212 A JP 2012508212A JP 5220237 B2 JP5220237 B2 JP 5220237B2
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Japan
Prior art keywords
substrate
mask
etching
blast
opening
Prior art date
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Expired - Fee Related
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JP2012508212A
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English (en)
Japanese (ja)
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JPWO2011122353A1 (ja
Inventor
邦彦 西村
繁 松野
秀一 檜座
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2012508212A priority Critical patent/JP5220237B2/ja
Application granted granted Critical
Publication of JP5220237B2 publication Critical patent/JP5220237B2/ja
Publication of JPWO2011122353A1 publication Critical patent/JPWO2011122353A1/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)
  • Weting (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2012508212A 2010-03-29 2011-03-16 基板の粗面化方法 Expired - Fee Related JP5220237B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012508212A JP5220237B2 (ja) 2010-03-29 2011-03-16 基板の粗面化方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2010076109 2010-03-29
JP2010076109 2010-03-29
JP2012508212A JP5220237B2 (ja) 2010-03-29 2011-03-16 基板の粗面化方法
PCT/JP2011/056311 WO2011122353A1 (fr) 2010-03-29 2011-03-16 Procédé permettant de rendre rugueux un substrat et procédé de fabrication d'un dispositif photovoltaïque

Publications (2)

Publication Number Publication Date
JP5220237B2 true JP5220237B2 (ja) 2013-06-26
JPWO2011122353A1 JPWO2011122353A1 (ja) 2013-07-08

Family

ID=44712071

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012508212A Expired - Fee Related JP5220237B2 (ja) 2010-03-29 2011-03-16 基板の粗面化方法

Country Status (2)

Country Link
JP (1) JP5220237B2 (fr)
WO (1) WO2011122353A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5297543B2 (ja) * 2011-03-30 2013-09-25 パナソニック株式会社 テクスチャ形成面を有するシリコン基板、およびその製造方法
JP6537149B2 (ja) * 2017-11-22 2019-07-03 株式会社伸光製作所 集合回路基板とその製造方法
CN113707764A (zh) * 2021-08-27 2021-11-26 福建金石能源有限公司 一种采用倒金字塔绒面的太阳能电池的制造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57156169A (en) * 1981-03-20 1982-09-27 Nippon Columbia Co Ltd Metal mask for sandblast
JPH0919865A (ja) * 1995-07-05 1997-01-21 Murata Mfg Co Ltd ブラスト用マスクおよびその製造方法
JP2003197932A (ja) * 2001-12-25 2003-07-11 Kyocera Corp 太陽電池素子およびその製造方法
JP2005136062A (ja) * 2003-10-29 2005-05-26 Sharp Corp 太陽電池の製造方法
WO2009128324A1 (fr) * 2008-04-17 2009-10-22 三菱電機株式会社 Procédé de rugosification de la surface d’un substrat et procédé de fabrication d’un dispositif photovoltaïque

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57156169A (en) * 1981-03-20 1982-09-27 Nippon Columbia Co Ltd Metal mask for sandblast
JPH0919865A (ja) * 1995-07-05 1997-01-21 Murata Mfg Co Ltd ブラスト用マスクおよびその製造方法
JP2003197932A (ja) * 2001-12-25 2003-07-11 Kyocera Corp 太陽電池素子およびその製造方法
JP2005136062A (ja) * 2003-10-29 2005-05-26 Sharp Corp 太陽電池の製造方法
WO2009128324A1 (fr) * 2008-04-17 2009-10-22 三菱電機株式会社 Procédé de rugosification de la surface d’un substrat et procédé de fabrication d’un dispositif photovoltaïque

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Publication number Publication date
JPWO2011122353A1 (ja) 2013-07-08
WO2011122353A1 (fr) 2011-10-06

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