JP5216612B2 - 半導体ウェハ処理装置 - Google Patents
半導体ウェハ処理装置 Download PDFInfo
- Publication number
- JP5216612B2 JP5216612B2 JP2009015112A JP2009015112A JP5216612B2 JP 5216612 B2 JP5216612 B2 JP 5216612B2 JP 2009015112 A JP2009015112 A JP 2009015112A JP 2009015112 A JP2009015112 A JP 2009015112A JP 5216612 B2 JP5216612 B2 JP 5216612B2
- Authority
- JP
- Japan
- Prior art keywords
- quartz glass
- semiconductor wafer
- purge gas
- wafer processing
- hot plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 18
- 238000012545 processing Methods 0.000 title claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 62
- 238000010926 purge Methods 0.000 claims description 49
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000005507 spraying Methods 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 239000007921 spray Substances 0.000 claims description 2
- 238000009423 ventilation Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 20
- 230000006837 decompression Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 10
- 238000003848 UV Light-Curing Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 238000000576 coating method Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Images
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
12−クールプレート
16−ホットプレート
18−蓋部
20−エキシマランプ
22−石英ガラス
26−第2のパージ管
28−第1のパージ管
152−支持部
Claims (3)
- 減圧状況下において絶縁膜が形成されたワークに対して加熱処理および紫外線照射処理を行うように構成された半導体ウェハ処理装置であって、
ワークの搬入または排出がされる際に開放可能な扉部、および天井部の一部を選択的に開放可能な蓋部を有する炉体と、
前記炉体の内部における前記蓋部の下方に配置された、ワークを下から支持しつつ加熱するように構成されたホットプレートと、
前記蓋部に設けられた、前記ホットプレート上のワークを露光する紫外線を照射可能なエキシマランプと、
前記エキシマランプと前記ワークとを隔てるように配置された石英ガラスと、
前記石英ガラスの周縁部を上下方向に挟持する支持部と、
前記石英ガラスに昇温されたパージガスを吹き付けるように構成されたパージガス吹付部と、
を備え、前記パージガス吹付部は、前記支持部の少なくとも一方を構成する半導体ウェハ処理装置。 - 前記石英ガラスに、ガスが通過可能な通気孔が形成された請求項1に記載の半導体ウェハ処理装置。
- 前記ホットプレートの下方に減圧ポンプに接続された排気部が設けられ、かつ、
前記パージガス吹付部が、少なくとも前記石英ガラスの上方に設けられた請求項1または2に記載の半導体ウェハ処理装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009015112A JP5216612B2 (ja) | 2009-01-27 | 2009-01-27 | 半導体ウェハ処理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009015112A JP5216612B2 (ja) | 2009-01-27 | 2009-01-27 | 半導体ウェハ処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010177239A JP2010177239A (ja) | 2010-08-12 |
JP5216612B2 true JP5216612B2 (ja) | 2013-06-19 |
Family
ID=42707922
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009015112A Active JP5216612B2 (ja) | 2009-01-27 | 2009-01-27 | 半導体ウェハ処理装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5216612B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104209254B (zh) * | 2014-08-15 | 2016-05-11 | 上海华力微电子有限公司 | 用于多孔低介电常数材料的紫外光固化工艺方法 |
CN105742165A (zh) * | 2016-02-26 | 2016-07-06 | 上海华力微电子有限公司 | 半导体晶圆紫外光固化方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60101927A (ja) * | 1983-11-07 | 1985-06-06 | Mitsubishi Electric Corp | 薄膜製造装置 |
JPS6274078A (ja) * | 1985-09-27 | 1987-04-04 | Applied Materials Japan Kk | 気相成長装置 |
JPS63224220A (ja) * | 1987-03-13 | 1988-09-19 | Nippon Denso Co Ltd | 光励起プロセス装置 |
JP3373468B2 (ja) * | 1999-11-24 | 2003-02-04 | 亘 佐々木 | 半導体製造装置 |
JP5258241B2 (ja) * | 2006-09-19 | 2013-08-07 | 日本エー・エス・エム株式会社 | Uv照射チャンバーをクリーニングする方法 |
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2009
- 2009-01-27 JP JP2009015112A patent/JP5216612B2/ja active Active
Also Published As
Publication number | Publication date |
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JP2010177239A (ja) | 2010-08-12 |
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