JP5205042B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5205042B2
JP5205042B2 JP2007320383A JP2007320383A JP5205042B2 JP 5205042 B2 JP5205042 B2 JP 5205042B2 JP 2007320383 A JP2007320383 A JP 2007320383A JP 2007320383 A JP2007320383 A JP 2007320383A JP 5205042 B2 JP5205042 B2 JP 5205042B2
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JP
Japan
Prior art keywords
layer
light
laser beam
semiconductor
electrode layer
Prior art date
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Expired - Fee Related
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JP2007320383A
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English (en)
Japanese (ja)
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JP2008177553A (ja
JP2008177553A5 (enExample
Inventor
健吾 秋元
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2007320383A priority Critical patent/JP5205042B2/ja
Publication of JP2008177553A publication Critical patent/JP2008177553A/ja
Publication of JP2008177553A5 publication Critical patent/JP2008177553A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Drying Of Semiconductors (AREA)
JP2007320383A 2006-12-20 2007-12-12 半導体装置の作製方法 Expired - Fee Related JP5205042B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007320383A JP5205042B2 (ja) 2006-12-20 2007-12-12 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006343418 2006-12-20
JP2006343418 2006-12-20
JP2007320383A JP5205042B2 (ja) 2006-12-20 2007-12-12 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2008177553A JP2008177553A (ja) 2008-07-31
JP2008177553A5 JP2008177553A5 (enExample) 2010-12-24
JP5205042B2 true JP5205042B2 (ja) 2013-06-05

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Family Applications (1)

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JP2007320383A Expired - Fee Related JP5205042B2 (ja) 2006-12-20 2007-12-12 半導体装置の作製方法

Country Status (2)

Country Link
US (1) US8043796B2 (enExample)
JP (1) JP5205042B2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
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US8818088B2 (en) 2002-01-04 2014-08-26 Warner Bros. Entertainment Inc. Registration of separations
US9241128B2 (en) 2013-02-14 2016-01-19 Warner Bros. Entertainment Inc. Video conversion technology

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US8426250B2 (en) * 2008-10-22 2013-04-23 Intel Corporation Laser-assisted chemical singulation of a wafer
US20100129984A1 (en) * 2008-11-26 2010-05-27 George Vakanas Wafer singulation in high volume manufacturing
JP2010141141A (ja) * 2008-12-11 2010-06-24 Nippon Hoso Kyokai <Nhk> 薄膜トランジスタおよびその製造方法、並びに表示装置
JP4489135B1 (ja) * 2008-12-26 2010-06-23 パナソニック株式会社 携帯電子機器
TWI415283B (zh) * 2009-02-18 2013-11-11 Au Optronics Corp Ｘ射線感測器及其製作方法
US8390777B2 (en) * 2009-09-11 2013-03-05 Chung Yuan Christian University Method for recovering properties of degraded liquid crystal
WO2011048923A1 (en) * 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. E-book reader
KR20230172618A (ko) * 2009-11-27 2023-12-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작방법
JP5656049B2 (ja) * 2010-05-26 2015-01-21 ソニー株式会社 薄膜トランジスタの製造方法
US20120211370A1 (en) * 2011-02-22 2012-08-23 Ibiden Co., Ltd. Method for manufacturing wiring board
JPWO2012114379A1 (ja) * 2011-02-23 2014-07-07 パナソニック株式会社 薄膜トランジスタ装置の製造方法、薄膜トランジスタ装置および表示装置
EP2742524A4 (en) * 2011-08-08 2015-07-15 Applied Materials Inc THIN LAYER STRUCTURE AND DEVICES WITH INTEGRATED LIGHT AND / OR HEAT CURING LAYERS FOR LASER STRUCTURING
US8785234B2 (en) * 2012-10-31 2014-07-22 Infineon Technologies Ag Method for manufacturing a plurality of chips
DE102013201298A1 (de) * 2013-01-28 2014-07-31 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zur Herstellung eines Halbleiterbauelements
US9013778B2 (en) 2013-03-06 2015-04-21 Sage Electrochromics, Inc. Laser cuts to reduce electrical leakage
KR20140133673A (ko) * 2013-05-09 2014-11-20 삼성디스플레이 주식회사 마스크 제조방법 및 마스크
US9152001B2 (en) 2013-07-25 2015-10-06 Sage Electrochromics, Inc. Electrochromic devices having improved structure for reducing current leakage across lower transparent conductor layers
CN104349575B (zh) * 2013-07-31 2017-12-26 鹏鼎控股(深圳)股份有限公司 柔性电路板及其制作方法
US20150153622A1 (en) 2013-12-03 2015-06-04 Sage Electrochromics, Inc. Methods for producing lower electrical isolation in electrochromic films
US9478419B2 (en) * 2013-12-18 2016-10-25 Asm Ip Holding B.V. Sulfur-containing thin films
US9245742B2 (en) 2013-12-18 2016-01-26 Asm Ip Holding B.V. Sulfur-containing thin films
JP2016062956A (ja) * 2014-09-16 2016-04-25 アイシン精機株式会社 基板及びその製造方法、半導体素子及びその製造方法、並びにレーザ加工装置
US10490475B2 (en) 2015-06-03 2019-11-26 Asm Ip Holding B.V. Methods for semiconductor passivation by nitridation after oxide removal
US9711350B2 (en) 2015-06-03 2017-07-18 Asm Ip Holding B.V. Methods for semiconductor passivation by nitridation
US10509291B2 (en) 2017-02-27 2019-12-17 Sage Electrochromics, Inc. Electrical device including a substrate and a transparent conductive layer and a process of forming the same
KR102881831B1 (ko) 2018-12-27 2025-11-06 삼성디스플레이 주식회사 증착 마스크 및 증착 마스크의 제조 방법
US11096271B1 (en) * 2020-04-09 2021-08-17 Raytheon Company Double-sided, high-density network fabrication
JP7309977B2 (ja) * 2021-06-23 2023-07-18 セメス カンパニー，リミテッド 基板処理装置及び基板処理方法
JP7461988B2 (ja) * 2022-06-22 2024-04-04 シャープディスプレイテクノロジー株式会社 アクティブマトリクス基板および表示装置

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US8818088B2 (en) 2002-01-04 2014-08-26 Warner Bros. Entertainment Inc. Registration of separations
US9104938B2 (en) 2002-01-04 2015-08-11 Warner Bros. Entertainment Inc. Registration of separations
US9773314B2 (en) 2002-01-04 2017-09-26 Warner Bros. Entertainment Inc. Registration of separations
US9241128B2 (en) 2013-02-14 2016-01-19 Warner Bros. Entertainment Inc. Video conversion technology
US9723257B2 (en) 2013-02-14 2017-08-01 Warner Bros. Entertainment Inc. Video conversion technology
US10277862B2 (en) 2013-02-14 2019-04-30 Warner Bros. Entertainment Inc. Video conversion technology
US10687017B2 (en) 2013-02-14 2020-06-16 Warner Bros. Entertainment Inc. Video conversion technology
US11997417B2 (en) 2013-02-14 2024-05-28 Warner Bros. Entertainment Inc. Video conversion technology

Also Published As

Publication number Publication date
US8043796B2 (en) 2011-10-25
JP2008177553A (ja) 2008-07-31
US20080153039A1 (en) 2008-06-26

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