JP5201841B2 - 表示装置の作製方法 - Google Patents

表示装置の作製方法 Download PDF

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Publication number
JP5201841B2
JP5201841B2 JP2007015503A JP2007015503A JP5201841B2 JP 5201841 B2 JP5201841 B2 JP 5201841B2 JP 2007015503 A JP2007015503 A JP 2007015503A JP 2007015503 A JP2007015503 A JP 2007015503A JP 5201841 B2 JP5201841 B2 JP 5201841B2
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layer
semiconductor layer
region
thin film
display device
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Expired - Fee Related
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JP2007015503A
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Japanese (ja)
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JP2008182124A5 (enExample
JP2008182124A (ja
Inventor
舜平 山崎
郁子 川俣
康行 荒井
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2007015503A priority Critical patent/JP5201841B2/ja
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Publication of JP2008182124A5 publication Critical patent/JP2008182124A5/ja
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  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
JP2007015503A 2007-01-25 2007-01-25 表示装置の作製方法 Expired - Fee Related JP5201841B2 (ja)

Priority Applications (1)

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JP2007015503A JP5201841B2 (ja) 2007-01-25 2007-01-25 表示装置の作製方法

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Application Number Priority Date Filing Date Title
JP2007015503A JP5201841B2 (ja) 2007-01-25 2007-01-25 表示装置の作製方法

Publications (3)

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JP2008182124A JP2008182124A (ja) 2008-08-07
JP2008182124A5 JP2008182124A5 (enExample) 2010-01-28
JP5201841B2 true JP5201841B2 (ja) 2013-06-05

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JP2007015503A Expired - Fee Related JP5201841B2 (ja) 2007-01-25 2007-01-25 表示装置の作製方法

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JP (1) JP5201841B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8106400B2 (en) * 2008-10-24 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5663231B2 (ja) * 2009-08-07 2015-02-04 株式会社半導体エネルギー研究所 発光装置
US20120298998A1 (en) 2011-05-25 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device
US9269915B2 (en) * 2013-09-18 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Display device
KR102358935B1 (ko) 2014-02-12 2022-02-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전자 기기
KR20230073405A (ko) * 2021-11-18 2023-05-26 삼성디스플레이 주식회사 표시 장치

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01194351A (ja) * 1988-01-29 1989-08-04 Hitachi Ltd 薄膜半導体装置
JP3108296B2 (ja) * 1994-01-26 2000-11-13 三洋電機株式会社 表示装置の製造方法
JPH1168114A (ja) * 1997-08-26 1999-03-09 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4906017B2 (ja) * 1999-09-24 2012-03-28 株式会社半導体エネルギー研究所 表示装置
JP2001257355A (ja) * 2000-03-10 2001-09-21 Seiko Epson Corp 電気光学基板、電気光学装置及び電子機器
JP3483840B2 (ja) * 2000-09-11 2004-01-06 株式会社半導体エネルギー研究所 アクティブマトリクス表示装置の作製方法
JP2003133550A (ja) * 2001-07-18 2003-05-09 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2004006652A (ja) * 2002-03-28 2004-01-08 Seiko Epson Corp 電気光学装置の製造方法、電気光学装置、半導体装置の製造方法、半導体装置、投射型表示装置及び電子機器
JP2003298059A (ja) * 2002-03-29 2003-10-17 Advanced Lcd Technologies Development Center Co Ltd 薄膜トランジスタ
JP2005286141A (ja) * 2004-03-30 2005-10-13 Seiko Epson Corp 半導体装置の製造方法
JP2005316100A (ja) * 2004-04-28 2005-11-10 Sanyo Electric Co Ltd 表示装置およびその製造方法

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JP2008182124A (ja) 2008-08-07

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