JP5191373B2 - エピタキシャルウェーハの製造方法及び製造装置 - Google Patents
エピタキシャルウェーハの製造方法及び製造装置 Download PDFInfo
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- JP5191373B2 JP5191373B2 JP2008324795A JP2008324795A JP5191373B2 JP 5191373 B2 JP5191373 B2 JP 5191373B2 JP 2008324795 A JP2008324795 A JP 2008324795A JP 2008324795 A JP2008324795 A JP 2008324795A JP 5191373 B2 JP5191373 B2 JP 5191373B2
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- single crystal
- crystal substrate
- silicon single
- heater
- temperature
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- 238000004519 manufacturing process Methods 0.000 title claims description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 99
- 229910052710 silicon Inorganic materials 0.000 claims description 99
- 239000010703 silicon Substances 0.000 claims description 99
- 239000013078 crystal Substances 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 56
- 238000010438 heat treatment Methods 0.000 claims description 15
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 6
- 230000007423 decrease Effects 0.000 claims description 6
- 230000003247 decreasing effect Effects 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 230000031070 response to heat Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 77
- 238000009826 distribution Methods 0.000 description 12
- 229910052736 halogen Inorganic materials 0.000 description 10
- 150000002367 halogens Chemical class 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 230000000630 rising effect Effects 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 206010037660 Pyrexia Diseases 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 235000012489 doughnuts Nutrition 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000036962 time dependent Effects 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004439 roughness measurement Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008324795A JP5191373B2 (ja) | 2008-12-19 | 2008-12-19 | エピタキシャルウェーハの製造方法及び製造装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008324795A JP5191373B2 (ja) | 2008-12-19 | 2008-12-19 | エピタキシャルウェーハの製造方法及び製造装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010147350A JP2010147350A (ja) | 2010-07-01 |
| JP2010147350A5 JP2010147350A5 (enrdf_load_stackoverflow) | 2012-08-30 |
| JP5191373B2 true JP5191373B2 (ja) | 2013-05-08 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008324795A Active JP5191373B2 (ja) | 2008-12-19 | 2008-12-19 | エピタキシャルウェーハの製造方法及び製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5191373B2 (enrdf_load_stackoverflow) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5807522B2 (ja) * | 2011-11-17 | 2015-11-10 | 信越半導体株式会社 | エピタキシャル成長装置 |
| US9200965B2 (en) * | 2012-06-26 | 2015-12-01 | Veeco Instruments Inc. | Temperature control for GaN based materials |
| JP2014060219A (ja) * | 2012-09-14 | 2014-04-03 | Shin Etsu Handotai Co Ltd | エピタキシャル成長装置 |
| JP5920188B2 (ja) * | 2012-11-26 | 2016-05-18 | 信越半導体株式会社 | 加熱装置 |
| JP5602903B2 (ja) | 2013-03-14 | 2014-10-08 | アプライド マテリアルズ インコーポレイテッド | エピタキシャル成長による成膜方法、および、エピタキシャル成長装置 |
| KR102116508B1 (ko) * | 2013-08-29 | 2020-05-28 | 에스케이실트론 주식회사 | 에피텍셜 웨이퍼 제조 장치 |
| JP6198584B2 (ja) * | 2013-11-21 | 2017-09-20 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | エピタキシャル成長による成膜方法、および、エピタキシャル成長装置 |
| JP6309252B2 (ja) * | 2013-11-21 | 2018-04-11 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | エピタキシャル成長による成膜方法、および、エピタキシャル成長装置 |
| JP6241277B2 (ja) * | 2013-12-27 | 2017-12-06 | 株式会社Sumco | エピタキシャル成長装置 |
| EP3488464B1 (en) * | 2016-07-22 | 2021-09-08 | Applied Materials, Inc. | Heating modulators to improve epi uniformity tuning |
| US10446420B2 (en) | 2016-08-19 | 2019-10-15 | Applied Materials, Inc. | Upper cone for epitaxy chamber |
| WO2021050489A1 (en) | 2019-09-09 | 2021-03-18 | Applied Materials, Inc. | Processing system and method of delivering a reactant gas |
| CN111599722B (zh) * | 2020-05-25 | 2023-04-14 | 北京北方华创微电子装备有限公司 | 一种半导体工艺设备 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03150365A (ja) * | 1989-07-26 | 1991-06-26 | Tokyo Electron Ltd | 熱処理装置 |
| US6064799A (en) * | 1998-04-30 | 2000-05-16 | Applied Materials, Inc. | Method and apparatus for controlling the radial temperature gradient of a wafer while ramping the wafer temperature |
| JP2000138170A (ja) * | 1998-10-30 | 2000-05-16 | Applied Materials Inc | 半導体製造装置 |
| JP2002217110A (ja) * | 2000-12-27 | 2002-08-02 | Applied Materials Inc | 加熱装置及びこれを用いた半導体製造装置 |
| US7108748B2 (en) * | 2001-05-30 | 2006-09-19 | Asm America, Inc. | Low temperature load and bake |
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- 2008-12-19 JP JP2008324795A patent/JP5191373B2/ja active Active
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| Publication number | Publication date |
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| JP2010147350A (ja) | 2010-07-01 |
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