JP5167652B2 - Ｍｅｍｓ素子 - Google Patents
Ｍｅｍｓ素子 Download PDFInfo
- Publication number
- JP5167652B2 JP5167652B2 JP2007035826A JP2007035826A JP5167652B2 JP 5167652 B2 JP5167652 B2 JP 5167652B2 JP 2007035826 A JP2007035826 A JP 2007035826A JP 2007035826 A JP2007035826 A JP 2007035826A JP 5167652 B2 JP5167652 B2 JP 5167652B2
- Authority
- JP
- Japan
- Prior art keywords
- floating gate
- movable
- movable electrode
- mems
- mems element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 description 28
- 238000009792 diffusion process Methods 0.000 description 20
- 238000005530 etching Methods 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 229910052814 silicon oxide Inorganic materials 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
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- Micromachines (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007035826A JP5167652B2 (ja) | 2007-02-16 | 2007-02-16 | Ｍｅｍｓ素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007035826A JP5167652B2 (ja) | 2007-02-16 | 2007-02-16 | Ｍｅｍｓ素子 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008253521A Division JP2009006479A (ja) | 2008-09-30 | 2008-09-30 | Ｍｅｍｓ素子およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008200758A JP2008200758A (ja) | 2008-09-04 |
| JP2008200758A5 JP2008200758A5 (enExample) | 2010-04-02 |
| JP5167652B2 true JP5167652B2 (ja) | 2013-03-21 |
Family
ID=39778771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007035826A Expired - Fee Related JP5167652B2 (ja) | 2007-02-16 | 2007-02-16 | Ｍｅｍｓ素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5167652B2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5953980B2 (ja) * | 2012-06-28 | 2016-07-20 | セイコーエプソン株式会社 | 振動デバイス、電子機器 |
| EP3683951A1 (en) | 2019-01-15 | 2020-07-22 | Enervibe Ltd. | Micro-electromechanical device for energy harvesting |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3351325B2 (ja) * | 1997-11-14 | 2002-11-25 | 株式会社村田製作所 | 共振子 |
| AU2565800A (en) * | 1999-03-18 | 2000-10-04 | Cavendish Kinetics Limited | Flash memory cell having a flexible element |
| JP2004243462A (ja) * | 2003-02-13 | 2004-09-02 | Sony Corp | Ｍｅｍｓ素子 |
| JP4645227B2 (ja) * | 2005-02-28 | 2011-03-09 | セイコーエプソン株式会社 | 振動子構造体及びその製造方法 |
| JP2006252956A (ja) * | 2005-03-10 | 2006-09-21 | Toshiba Corp | マイクロマシンスイッチ及び電子機器 |
| JP4405427B2 (ja) * | 2005-05-10 | 2010-01-27 | 株式会社東芝 | スイッチング素子 |
-
2007
- 2007-02-16 JP JP2007035826A patent/JP5167652B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008200758A (ja) | 2008-09-04 |
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