JP5164406B2 - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置 Download PDF

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Publication number
JP5164406B2
JP5164406B2 JP2007073794A JP2007073794A JP5164406B2 JP 5164406 B2 JP5164406 B2 JP 5164406B2 JP 2007073794 A JP2007073794 A JP 2007073794A JP 2007073794 A JP2007073794 A JP 2007073794A JP 5164406 B2 JP5164406 B2 JP 5164406B2
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Japan
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region
gate electrode
film
floating gate
insulating film
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Expired - Fee Related
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JP2007073794A
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Japanese (ja)
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JP2007288178A (ja
JP2007288178A5 (enExample
Inventor
舜平 山崎
良信 浅見
圭恵 高野
誠 古野
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2007073794A priority Critical patent/JP5164406B2/ja
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Publication of JP2007288178A5 publication Critical patent/JP2007288178A5/ja
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JP2007073794A 2006-03-21 2007-03-21 不揮発性半導体記憶装置 Expired - Fee Related JP5164406B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007073794A JP5164406B2 (ja) 2006-03-21 2007-03-21 不揮発性半導体記憶装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006077897 2006-03-21
JP2006077897 2006-03-21
JP2007073794A JP5164406B2 (ja) 2006-03-21 2007-03-21 不揮発性半導体記憶装置

Publications (3)

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JP2007288178A JP2007288178A (ja) 2007-11-01
JP2007288178A5 JP2007288178A5 (enExample) 2010-04-15
JP5164406B2 true JP5164406B2 (ja) 2013-03-21

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JP2007073794A Expired - Fee Related JP5164406B2 (ja) 2006-03-21 2007-03-21 不揮発性半導体記憶装置

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JP (1) JP5164406B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015046511A (ja) * 2013-08-28 2015-03-12 株式会社東芝 半導体装置及びその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5508543A (en) * 1994-04-29 1996-04-16 International Business Machines Corporation Low voltage memory
JPH10135357A (ja) * 1996-10-28 1998-05-22 Sony Corp 半導体不揮発性記憶装置
JP2002198446A (ja) * 2000-12-27 2002-07-12 Fujitsu Ltd 半導体記憶装置とその製造方法
JP4472934B2 (ja) * 2002-03-27 2010-06-02 イノテック株式会社 半導体装置および半導体メモリ
KR100688575B1 (ko) * 2004-10-08 2007-03-02 삼성전자주식회사 비휘발성 반도체 메모리 소자

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