JP5162670B2 - 急速熱処理用基板回転揺動装置 - Google Patents
急速熱処理用基板回転揺動装置 Download PDFInfo
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- 230000001174 ascending effect Effects 0.000 claims description 11
- 230000010355 oscillation Effects 0.000 claims description 6
- 238000006073 displacement reaction Methods 0.000 claims description 5
- 230000007423 decrease Effects 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- 238000005339 levitation Methods 0.000 description 8
- 230000000630 rising effect Effects 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
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- 230000035939 shock Effects 0.000 description 2
- 206010037660 Pyrexia Diseases 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- H—ELECTRICITY
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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Description
図4は、本発明の第1の実施例に係る急速熱処理用基板回転揺動装置を説明するための図で、本出願人が大韓民国特許第523674号(2005.10.18)として既に登録を受けた多極着磁マグネット方式の基板回転装置全体を水平揺動させることによって、基板の水平回転と水平揺動を共に行うことを特徴とする。
図4に示した多極着磁マグネット方式の基板回転装置は、本出願人が大韓民国特許第523674号(2005.10.18)として既に特許登録を受けたもので、これについての詳細な内容は大韓民国特許第523674号に開示されているので、ここでは簡略に説明する。
図4を参照すれば、基板20の水平揺動は、前記基板回転装置を全体的に揺動させることによって行われる。前記基板回転装置の全体的な揺動は、リング状揺動板140を揺動させることによって得られる。
図16は、本発明の第2の実施例に係る急速熱処理用基板回転揺動装置を説明するための図で、基板の水平回転が磁気浮上モータによって行われる場合に関するものである。
Claims (17)
- 基板を支持する基板支持台と連結され、前記基板支持台を水平回転させることによって前記基板を水平回転させる水平回転手段と、前記水平回転手段を全体的に支持する揺動板と、前記揺動板を水平揺動させることによって前記基板を水平揺動させる水平揺動手段と、を備えており、
前記水平揺動手段は、
回転軸が下側中心回転軸、偏心軸及び上側中心回転軸に区分され、前記下側中心回転軸と上側中心回転軸はモータ中心軸上に位置し、前記偏心軸は前記下側中心回転軸と上側中心回転軸との間に前記モータ中心軸から偏心して位置する揺動モータと、
前記揺動モータを昇下降させる昇下降手段と、
前記偏心軸に設置される揺動カムと、
前記揺動カムが嵌められる揺動用穴が形成されている揺動板と、を備えることを特徴とする急速熱処理用基板回転揺動装置。 - 前記水平回転手段が、
回転モータと、
前記回転モータの回転軸に連結され、上面に磁石が設置される下側多極着磁磁石ホイールと、
前記下側多極着磁磁石ホイールの上側に位置し、前記下側多極着磁磁石ホイールの磁力によって共に回転するように下面に磁石が設置される上側多極着磁磁石ホイールと、
前記上側多極着磁磁石ホイールの回転軸に連結され、側面に磁石が設置される円盤状の多極着磁磁石ドラムと、
外側面が前記多極着磁磁石ドラムに隣接するように設置され、前記外側面には磁石が設置され、前記多極着磁磁石ドラムの磁力によって共に回転し、前記基板支持台に連結される多極着磁磁石リングと、を含んで構成されることを特徴とする、請求項1に記載の急速熱処理用基板回転揺動装置。 - 前記揺動板は、内側縁部が上側に折り曲げられた上昇折曲部を有するリング状であって、前記多極着磁磁石リングの内側面と前記上昇折曲部との間にベアリングが設置されることを特徴とする、請求項2に記載の急速熱処理用基板回転揺動装置。
- 前記回転モータが熱処理チャンバの外部に位置し、前記回転モータと前記熱処理チャンバとの間はベローズによって密封されることを特徴とする、請求項2に記載の急速熱処理用基板回転揺動装置。
- 前記水平回転手段が、
コイルが巻かれているリング状の固定子と、
前記固定子の内側に設置され、前記コイルによって発生する磁場の力によって回転し、前記基板支持台に連結される回転子と、を含んで構成されることを特徴とする、請求項1に記載の急速熱処理用基板回転揺動装置。 - 前記固定子及び回転子が熱処理チャンバの内部に位置することを特徴とする、請求項5に記載の急速熱処理用基板回転揺動装置。
- 前記揺動板にX軸、Y軸及びZ軸変位センサが設置されることを特徴とする、請求項1に記載の急速熱処理用基板回転揺動装置。
- 前記昇下降手段及び前記揺動モータが熱処理チャンバの外部に位置し、前記揺動カムは前記熱処理チャンバの内部に位置することを特徴とする、請求項1に記載の急速熱処理用基板回転揺動装置。
- 前記揺動モータと前記熱処理チャンバとの間はベローズによって密封されることを特徴とする、請求項8に記載の急速熱処理用基板回転揺動装置。
- 前記揺動カムが前記偏心軸に対して独立的に回転できるように前記揺動カムと前記偏心軸との間にベアリングが設置されることを特徴とする、請求項1に記載の急速熱処理用基板回転揺動装置。
- 前記揺動カムは、上側に行くほど幅が狭くなる円錐台状であって、前記揺動用穴も、前記揺動カムが合致して嵌められるように円錐台状であることを特徴とする、請求項1に記載の急速熱処理用基板回転揺動装置。
- 前記上側中心回転軸にセンタリング用カムが設置され、前記揺動板には、前記センタリング用カムが嵌められるように前記揺動用穴から上側に延長され、センタリング用穴が形成されることを特徴とする、請求項1に記載の急速熱処理用基板回転揺動装置。
- 前記センタリング用カムは、下側に行くほど幅が狭くなる逆円錐台状であって、前記センタリング用穴も、前記センタリング用カムが合致して嵌められるように逆円錐台状であることを特徴とする、請求項12に記載の急速熱処理用基板回転揺動装置。
- 前記センタリング用カムが前記上側中心回転軸に対して独立的に回転できるように、前記センタリング用カムと前記上側中心回転軸との間にベアリングが設置されることを特徴とする、請求項12に記載の急速熱処理用基板回転揺動装置。
- 前記揺動カムが上昇して前記揺動用穴に嵌められれば、前記センタリングカムが前記センタリング用穴の上側から離脱し、前記センタリングカムが下降して前記センタリング用穴に嵌められれば、前記揺動カムが前記揺動用穴の下側から離脱するように前記揺動カムとセンタリングカムが設置されることを特徴とする、請求項12に記載の急速熱処理用基板回転揺動装置。
- 前記揺動板は、水平自由移動手段上に載せられ、前記水平自由移動手段の案内によって水平揺動することを特徴とする、請求項1に記載の急速熱処理用基板回転揺動装置。
- 前記水平自由移動手段は、
LMレールの上側にLMブロックが置かれる下側LMガイドと、
LMレールの下側にLMブロックが置かれ、前記下側LMガイドと直交する方向に直線運動を案内する上側LMガイドと、
前記下側LMガイドのLMブロックと前記上側LMガイドのLMブロックが共に動くように前記下側LMガイドのLMブロックと前記上側LMガイドのLMブロックとを連結するコネクタと、を含み、前記揺動板は前記上側LMガイドのLMレール上に載せられることを特徴とする、請求項16に記載の急速熱処理用基板回転揺動装置。
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KR1020070119833A KR100906341B1 (ko) | 2007-11-22 | 2007-11-22 | 급속열처리용 기판회전요동장치 |
KR10-2007-0119833 | 2007-11-22 | ||
PCT/KR2008/006799 WO2009066923A2 (en) | 2007-11-22 | 2008-11-19 | Substrate rotating and oscillating apparatus for rapid thermal process |
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JP2011504659A JP2011504659A (ja) | 2011-02-10 |
JP5162670B2 true JP5162670B2 (ja) | 2013-03-13 |
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JP2010534884A Expired - Fee Related JP5162670B2 (ja) | 2007-11-22 | 2008-11-19 | 急速熱処理用基板回転揺動装置 |
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US (1) | US8346068B2 (ja) |
EP (1) | EP2220675B1 (ja) |
JP (1) | JP5162670B2 (ja) |
KR (1) | KR100906341B1 (ja) |
CN (1) | CN101874297A (ja) |
WO (1) | WO2009066923A2 (ja) |
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JP5869782B2 (ja) * | 2011-05-30 | 2016-02-24 | 東レエンジニアリング株式会社 | 浮上搬送加熱装置 |
CN105940481A (zh) * | 2014-01-27 | 2016-09-14 | 应用材料公司 | 高速epi系统和腔室构思 |
US9953813B2 (en) * | 2014-06-06 | 2018-04-24 | Applied Materials, Inc. | Methods and apparatus for improved metal ion filtering |
US9659765B2 (en) | 2014-07-21 | 2017-05-23 | Applied Materials, Inc. | Enhancement of modulus and hardness for UV-cured ultra low-k dielectric films |
JP6507953B2 (ja) * | 2015-09-08 | 2019-05-08 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
CN107022754B (zh) * | 2016-02-02 | 2020-06-02 | 东京毅力科创株式会社 | 基板处理装置 |
JP6777055B2 (ja) * | 2017-01-11 | 2020-10-28 | 東京エレクトロン株式会社 | 基板処理装置 |
CN108109943B (zh) * | 2017-12-15 | 2020-05-19 | 安徽省繁昌县皖南阀门铸造有限公司 | 一种涂布设备的热处理腔室 |
CN111952082B (zh) * | 2020-09-11 | 2022-01-11 | 山东泰开电力电子有限公司 | 一种用于电容器外壳生产加工的烘干机 |
CN114334717B (zh) * | 2021-11-19 | 2024-09-24 | 杭州中欣晶圆半导体股份有限公司 | 通过高温退火方式调控硅片背面光泽度的控制系统及方法 |
CN114508929B (zh) * | 2022-02-14 | 2023-08-15 | 李正义 | 三次元掁动粉体烧结设备和烧结方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPH03271195A (ja) * | 1990-03-20 | 1991-12-03 | Fujitsu Ltd | 基板回転装置 |
US5444217A (en) | 1993-01-21 | 1995-08-22 | Moore Epitaxial Inc. | Rapid thermal processing apparatus for processing semiconductor wafers |
JPH10329011A (ja) * | 1997-03-21 | 1998-12-15 | Canon Inc | 精密研磨装置及び方法 |
KR100553256B1 (ko) | 2000-09-01 | 2006-02-20 | 주식회사 실트론 | 반도체 웨이퍼의 국부 열처리 장치 |
JP2002100602A (ja) | 2000-09-22 | 2002-04-05 | Dainippon Screen Mfg Co Ltd | 基板表面処理装置および基板表面処理方法 |
US6913528B2 (en) * | 2001-03-19 | 2005-07-05 | Speedfam-Ipec Corporation | Low amplitude, high speed polisher and method |
JP2003093958A (ja) * | 2001-09-26 | 2003-04-02 | Dainippon Screen Mfg Co Ltd | 基板への塗布液の塗布方法および塗布装置 |
KR20040033676A (ko) * | 2002-10-15 | 2004-04-28 | 김병영 | 세라믹 볼의 제조 방법 및 장치 |
KR100523674B1 (ko) * | 2004-07-15 | 2005-10-25 | 코닉시스템 주식회사 | 급속 열처리장치의 웨이퍼 회전장치 |
JP2006078019A (ja) * | 2004-09-07 | 2006-03-23 | Kokusai Electric Semiconductor Service Inc | 熱処理装置 |
KR100744101B1 (ko) * | 2006-07-27 | 2007-08-01 | 두산메카텍 주식회사 | 웨이퍼 표면연마장비의 플래튼 구동 시스템 |
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- 2007-11-22 KR KR1020070119833A patent/KR100906341B1/ko not_active IP Right Cessation
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2008
- 2008-11-19 US US12/743,842 patent/US8346068B2/en active Active
- 2008-11-19 WO PCT/KR2008/006799 patent/WO2009066923A2/en active Application Filing
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CN101874297A (zh) | 2010-10-27 |
WO2009066923A3 (en) | 2009-08-06 |
KR100906341B1 (ko) | 2009-07-06 |
JP2011504659A (ja) | 2011-02-10 |
KR20090053152A (ko) | 2009-05-27 |
EP2220675B1 (en) | 2013-09-11 |
EP2220675A4 (en) | 2012-09-26 |
US20100322603A1 (en) | 2010-12-23 |
EP2220675A2 (en) | 2010-08-25 |
WO2009066923A2 (en) | 2009-05-28 |
US8346068B2 (en) | 2013-01-01 |
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