JP5159413B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP5159413B2
JP5159413B2 JP2008113813A JP2008113813A JP5159413B2 JP 5159413 B2 JP5159413 B2 JP 5159413B2 JP 2008113813 A JP2008113813 A JP 2008113813A JP 2008113813 A JP2008113813 A JP 2008113813A JP 5159413 B2 JP5159413 B2 JP 5159413B2
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film
silicon
silicon carbide
semiconductor device
gate electrode
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Japanese (ja)
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JP2009267021A (ja
JP2009267021A5 (https=
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田 貴 士 泉
木 伸 俊 青
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Toshiba Corp
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Toshiba Corp
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Priority to JP2008113813A priority Critical patent/JP5159413B2/ja
Priority to US12/402,093 priority patent/US8035199B2/en
Publication of JP2009267021A publication Critical patent/JP2009267021A/ja
Publication of JP2009267021A5 publication Critical patent/JP2009267021A5/ja
Priority to US13/224,449 priority patent/US8420467B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6211—Fin field-effect transistors [FinFET] having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions

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  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2008113813A 2008-04-24 2008-04-24 半導体装置及びその製造方法 Active JP5159413B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008113813A JP5159413B2 (ja) 2008-04-24 2008-04-24 半導体装置及びその製造方法
US12/402,093 US8035199B2 (en) 2008-04-24 2009-03-11 Semiconductor device and method for manufacturing the same
US13/224,449 US8420467B2 (en) 2008-04-24 2011-09-02 Semiconductor device and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008113813A JP5159413B2 (ja) 2008-04-24 2008-04-24 半導体装置及びその製造方法

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JP2009267021A JP2009267021A (ja) 2009-11-12
JP2009267021A5 JP2009267021A5 (https=) 2010-11-04
JP5159413B2 true JP5159413B2 (ja) 2013-03-06

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JP (1) JP5159413B2 (https=)

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US9059292B2 (en) * 2012-08-02 2015-06-16 International Business Machines Corporation Source and drain doping profile control employing carbon-doped semiconductor material
US8610201B1 (en) * 2012-08-16 2013-12-17 Kabushiki Kaisha Toshiba FinFET comprising a punch-through stopper
US8932918B2 (en) 2012-08-29 2015-01-13 International Business Machines Corporation FinFET with self-aligned punchthrough stopper
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CN105304716A (zh) * 2012-11-30 2016-02-03 中国科学院微电子研究所 FinFET及其制造方法
CN103928333B (zh) * 2013-01-15 2019-03-12 中国科学院微电子研究所 半导体器件及其制造方法
CN103928334B (zh) * 2013-01-15 2017-06-16 中国科学院微电子研究所 半导体器件及其制造方法
CN103928335B (zh) * 2013-01-15 2017-10-17 中国科学院微电子研究所 半导体器件及其制造方法
US8933528B2 (en) * 2013-03-11 2015-01-13 International Business Machines Corporation Semiconductor fin isolation by a well trapping fin portion
KR102042476B1 (ko) * 2013-03-14 2019-11-08 인텔 코포레이션 나노와이어 트랜지스터에 대한 누설 감소 구조체
US8940602B2 (en) * 2013-04-11 2015-01-27 International Business Machines Corporation Self-aligned structure for bulk FinFET
US8957478B2 (en) * 2013-06-24 2015-02-17 International Business Machines Corporation Semiconductor device including source/drain formed on bulk and gate channel formed on oxide layer
EP3050088A4 (en) * 2013-09-25 2017-05-03 Intel Corporation Isolation well doping with solid-state diffusion sources for finfet architectures
CN106104805B (zh) 2013-11-22 2020-06-16 阿托梅拉公司 包括超晶格穿通停止层堆叠的垂直半导体装置和相关方法
US9054189B1 (en) 2014-01-06 2015-06-09 Samsung Electronics Co., Ltd. Semiconductor device and method for fabricating the same
US20150255456A1 (en) * 2014-03-04 2015-09-10 Globalfoundries Inc. Replacement fin insolation in a semiconductor device
US10672768B2 (en) * 2014-03-17 2020-06-02 Tufts University Integrated circuit with multi-threshold bulk FinFETs
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US9721955B2 (en) 2014-04-25 2017-08-01 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for SRAM FinFET device having an oxide feature
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US9564530B2 (en) 2014-06-23 2017-02-07 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit structure and method with solid phase diffusion
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CN105679659A (zh) * 2014-11-20 2016-06-15 中国科学院微电子研究所 Ptsl工艺方法、鳍式场效应晶体管的制造方法
US9722046B2 (en) 2014-11-25 2017-08-01 Atomera Incorporated Semiconductor device including a superlattice and replacement metal gate structure and related methods
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US9865710B2 (en) * 2015-03-31 2018-01-09 Stmicroelectronics, Inc. FinFET having a non-uniform fin
US9954107B2 (en) 2015-05-05 2018-04-24 International Business Machines Corporation Strained FinFET source drain isolation
CN107810549B (zh) 2015-05-15 2021-12-17 阿托梅拉公司 具有提供晕圈注入峰值限制的超晶格层的半导体装置和相关方法
US9721790B2 (en) 2015-06-02 2017-08-01 Atomera Incorporated Method for making enhanced semiconductor structures in single wafer processing chamber with desired uniformity control
CN106328527B (zh) * 2015-06-30 2019-05-28 中芯国际集成电路制造(上海)有限公司 鳍式场效应晶体管的形成方法
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CN106601678B (zh) * 2015-10-14 2019-10-25 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制备方法、电子装置
CN106611710A (zh) * 2015-10-22 2017-05-03 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法
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Publication number Publication date
US20120003801A1 (en) 2012-01-05
JP2009267021A (ja) 2009-11-12
US20090267155A1 (en) 2009-10-29
US8035199B2 (en) 2011-10-11
US8420467B2 (en) 2013-04-16

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