JP5159010B2 - Method for manufacturing light emitting device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a thin film forming apparatus used for manufacturing a display device having an EL (electroluminescence) element (hereinafter referred to as a light emitting device), a method for manufacturing a light emitting device using the thin film forming device, and a manufactured light emitting device.
[0002]
[Prior art]
In recent years, research on a light-emitting device having an EL element as a self-luminous element has been activated, and in particular, a light-emitting device using an organic material as an EL material has attracted attention. Note that the light emitting device is also called an organic EL display (OELD) or an organic light emitting diode (OLED).
[0003]
Unlike the liquid crystal display device, the light-emitting device is a self-luminous type and has a feature that there is no problem of viewing angle. That is, as a display used outdoors, it is more suitable than a liquid crystal display, and use in various forms has been proposed.
[0004]
An EL element has a structure in which an EL layer is sandwiched between a pair of electrodes, but the EL layer usually has a laminated structure. A typical example is a “hole transport layer / light emitting layer / electron transport layer” stacked structure proposed by Tang et al. Of Eastman Kodak Company. This structure has very high luminous efficiency, and most of the light emitting devices that are currently under research and development employ this structure.
[0005]
Then, a predetermined voltage is applied to the EL layer having the above structure from the pair of electrodes, whereby recombination of carriers occurs in the light emitting layer to emit light. For this, a method of forming an EL layer between two types of stripe-shaped electrodes provided so as to be orthogonal to each other (simple matrix method), or a pixel electrode and a counter electrode connected to a TFT and arranged in a matrix There are two types, an EL layer forming method (active matrix method).
[0006]
By the way, the EL element is generally formed so that light is emitted to the substrate side on which the TFT is formed as viewed from the EL element (this is referred to as a bottom emission method in this specification). Is.
[0007]
In the case of the bottom emission method, the pixel electrode formed on the substrate on which the TFT is formed on the insulating surface such as quartz or glass (hereinafter referred to as TFT substrate) is an anode, and an alloy of indium oxide and tin oxide. (Referred to as ITO) or a light-transmitting conductive film such as zinc oxide. An EL layer is formed over the pixel electrode, and a counter electrode made of a metal material that is a cathode and has a low work function is formed over the EL layer. In forming the pixel electrode, patterning of the pixel electrode is required. In this case, patterning is usually performed using photolithography. Further, a vapor deposition method with little damage to the EL layer is used for forming the counter electrode.
[0008]
[Problems to be solved by the invention]
A light-emitting device having an EL element that emits light toward the substrate side with respect to the EL element (hereinafter referred to as a bottom emission method) has a limit in the element structure in terms of its aperture ratio. Therefore, it is expected that the aperture ratio can be increased by forming an EL element that emits light on the opposite side of the substrate from the EL element (hereinafter referred to as a top emission method).
[0009]
However, in the formation of a top emission type EL element, not only the element configuration is reversed, but also a manufacturing difference occurs. First, a pixel electrode which is a cathode is formed on a TFT substrate, but patterning using a photolithography method cannot be used as when an anode is formed. This is because the conductive material having a low work function for forming the cathode forms an oxide film, and the pixel electrode surface has an insulating property.
[0010]
In addition, when using the vapor deposition method using a metal mask, a problem arises in the accuracy of alignment with respect to the fine mask pattern. Therefore, in the present invention, it is required to realize the patterning of the pixel electrode using the vapor deposition method by improving the alignment accuracy of the metal mask.
[0011]
Furthermore, although an EL layer is formed on the pixel electrode, the EL material forming the EL layer is extremely vulnerable to oxidation, and the oxidation is easily promoted and deteriorated even in the presence of a small amount of moisture. Therefore, it is required to suppress the deterioration of the EL material.
[0012]
In addition, an anode is formed on the EL layer as a counter electrode. Since the light-transmitting conductive film formed at this time is formed by a sputtering method, damage to the EL layer becomes a problem at the time of film formation. Therefore, a method for forming an anode without damaging the EL layer is required.
[0013]
The present invention has been made to satisfy the above-described requirements, and an object of the present invention is to provide a thin film forming apparatus that is most preferable for producing a top emission type EL element. It is another object of the present invention to provide a method for manufacturing a light-emitting device with high reliability by using such a thin film forming apparatus. Note that an electric appliance using the light-emitting device obtained by the present invention for the display portion is also included in the present invention.
[0014]
[Means for Solving the Problems]
The gist of the present invention is to form a means for patterning a pixel electrode (cathode) required in the formation of a top emission type EL element, a means for forming a thin film made of an EL material, and a counter electrode (anode). The light emitting device is manufactured using a multi-chamber method (also referred to as a cluster tool method) or an in-line thin film forming apparatus in which the above-described means are integrated.
[0015]
In the present invention, the pixel electrode of the EL element is formed by a vapor deposition method and is formed into a desired pattern using a metal mask. In addition, when performing vapor deposition with a fine mask pattern using a metal mask, higher accuracy is required for the alignment between the TFT substrate and the metal mask. Furthermore, it is important to reduce the distance between the TFT substrate and the metal mask.
[0016]
Therefore, in the present invention, a CCD (Charge Coupled Device), which is known as an image sensor, is provided in the film forming chamber for forming the pixel electrode, so that the TFT substrate and the metal mask are aligned with high accuracy. Further, by controlling the distance between the two to the minimum, it is possible to form a pixel electrode having a fine pattern by vapor deposition.
[0017]
Further, when the surface of the metal film that forms the pixel electrode is oxidized, an oxide film is formed, which causes insulation. Therefore, after forming the pixel electrode, the EL layer is formed without exposing the TFT substrate to the atmosphere. Further, since the EL material for forming the EL layer is also vulnerable to oxygen, the EL layer is formed in a vacuum state.
[0018]
Next, a counter electrode made of a light-transmitting conductive film is formed on the EL layer as a counter electrode. However, damage to the EL layer at the time of forming the counter electrode becomes a problem. Therefore, the present invention solves this problem by forming a metal thin film having a high transmittance as a passivation film on the EL layer.
[0019]
Then, a counter electrode which is an anode is formed on the surface covered with the passivation film.
These passivation film and counter electrode are also preferably formed so as not to be exposed to an environment containing moisture or oxygen. Therefore, it can be said that it is desirable that the means for forming these is also mounted on the same thin film forming apparatus.
[0020]
The present invention achieves the above requirements with a multi-chamber thin film forming apparatus, and is a technique for manufacturing a highly reliable light-emitting device using such a thin film forming apparatus.
[0021]
DETAILED DESCRIPTION OF THE INVENTION
The embodiment of the present invention will be described in detail with reference to the following examples.
[0022]
【Example】
[Example 1]
The thin film forming apparatus of the present invention will be described with reference to FIG. In FIG. 1, an EL element including a pixel electrode (cathode), an auxiliary electrode, an EL layer including a light emitting layer, a first passivation film, and a counter electrode (anode) is formed on a TFT substrate, and a second passivation is performed. It is an apparatus for manufacturing a light emitting device in which a film is formed and a sealing structure is completed.
[0023]
In FIG. 1, reference numeral 101 denotes a load chamber for carrying in / out substrates, which is also called a load lock chamber. A carrier 102 on which a substrate is set is arranged here. Note that the load chamber 101 may be distinguished from substrate loading and substrate loading. 106a is a gate.
[0024]
Reference numeral 103 denotes a first transfer chamber including a mechanism (hereinafter referred to as a first transfer mechanism) 105 for transferring the substrate 104. A robot arm or the like that handles the substrate is a kind of the first transport mechanism 105.
[0025]
A plurality of film formation chambers (indicated by 107 to 109) are connected to the first transfer chamber 103 through gates 106b to 106d, and a processing chamber (sealing) that performs a sealing process through the gate 106e. Chamber 110). Further, the second transfer chamber 111 is connected to the first transfer chamber 103 via a gate 106f, and the second transfer chamber 111 is connected to the third transfer chamber 112 via a gate 106g. Note that the third transfer chamber 112 has a second transfer mechanism 113.
[0026]
The third transfer chamber 112 is connected to a plurality of film formation chambers (115 to 119) for forming an EL layer by gates (106h to 106l). The plurality of film formation chambers are referred to as an EL layer film formation chamber 114 in this specification.
[0027]
In the configuration of FIG. 1, each film forming chamber, transfer chamber, and processing chamber are completely shut off by the gates 106 a to 106 l, respectively, so that an airtight sealed space can be obtained. Further, the inside of these is a reduced-pressure vacuum atmosphere, specifically, 1 × 10 ^-6 ~ 1x10 ^-Five The reduced pressure state of Torr is maintained.
[0028]
Note that a vacuum state can be maintained by providing an exhaust pump in each film formation chamber, transfer chamber, and processing chamber. As the exhaust pump, an oil rotary pump, a mechanical booster pump, a turbo molecular pump, or a cryopump can be used, but a cryopump effective for removing water is preferable.
[0029]
Reference numeral 107 denotes a metal material vapor deposition chamber for depositing a metal material by a vapor deposition method. As a vapor deposition method, a resistance heating method (RE method: Resistivity Evaporation method) and an electron beam method (EB method: Electron Beam method) can be used. In this embodiment, vapor deposition is performed by the RE method. The case will be described. In the metal material vapor deposition chamber 107, a pixel electrode electrically connected to the TFT on the substrate is formed. Note that the pixel electrode formed in this embodiment is a cathode.
[0030]
That is, here, a metal element having high reflectivity and low sheet resistance suitable for forming the pixel electrode is used. In this embodiment, aluminum is used, but materials such as ITO, which is an alloy of titanium, chromium, tin oxide and indium oxide, can also be used.
[0031]
Further, as the material of the pixel electrode (cathode), a material having a low work function is preferable, so that Yb which is a transition metal is also a suitable material. In addition, as a method for forming the pixel electrode, there are a vapor deposition method and a sputtering method. In this embodiment, the film formation is performed by the vapor deposition method. In addition, when performing vapor deposition in the metal material vapor deposition chamber 107, it is necessary to provide a vapor deposition source (sample boat). A plurality of vapor deposition sources may be provided.
[0032]
In this embodiment, since the pixel electrode is a cathode, it is necessary to form the pixel electrode independently for each pixel on which one EL element is formed. However, since aluminum and titanium easily form an oxide film due to the nature of the material, it is not appropriate to manufacture a pixel electrode by patterning using photolithography. Therefore, in this embodiment, a pixel electrode having a fine structure is formed by performing vapor deposition using a metal mask in the metal material vapor deposition chamber 107.
[0033]
At this time, the metal material vapor deposition chamber 107 is in a vacuum state, specifically, 1 × 10 6. ^-6 ~ 1x10 ^-Five The film formation process is performed at Torr. During the film formation process, the pressure in the chamber may be controlled by completely shutting off the first transfer chamber 103 using the gate 106b.
[0034]
Also, when performing partial film formation with a pixel size using a metal mask, if the metal mask is a metal mask having a fine pattern of about 10 to 100 μm, the alignment with the TFT substrate can be performed with high accuracy. It needs to be done.
[0035]
Therefore, in the present invention, a CCD is provided as an alignment function for alignment in the metal material vapor deposition chamber 107. Then, the CCD directly observes the alignment marks previously attached to the TFT substrate and the metal mask located on the stage, and the stage is rotated in the X-axis, Y-axis, and θ rotation directions so that both alignment marks are at the same position. The position is adjusted by moving. In the present specification, such a stage is referred to as an XY-θ stage.
[0036]
Further, an auxiliary electrode made of a metal material is formed on the pixel electrode in the metal material vapor deposition chamber 107. Usually, a material having a low work function is used for the cathode, but in this embodiment, a material having a high work function such as Al is used for the cathode material. Therefore, an auxiliary electrode is formed on the pixel electrode in order to lower the work function. In the formation of the auxiliary electrode, alignment using a CCD is performed as in the formation of the pixel electrode.
[0037]
Note that the metal material used for the auxiliary electrode includes a group 1 element in the periodic table of long-period elements such as lithium, sodium, potassium, and cesium, a group 2 element such as magnesium, or an oxide or fluoride of these elements. Is suitable. However, since oxides and fluorides have insulating properties, it is preferable to form a film so that a tunnel current is generated, specifically about 0.5 to 2 nm.
[0038]
As another auxiliary electrode material, an organic metal film such as lithium acetylacetonate (Liacac) can also be used. Since it has conductivity, even if it is formed to a film thickness of about 5 nm, there is no problem in its resistance value.
[0039]
As described above, by laminating the pixel electrode and the auxiliary electrode to form a cathode, these work functions are set to 2.5 to 4.0.
[0040]
That is, the sample boat in the metal material vapor deposition chamber 107 must be provided with a metal material for forming the pixel electrode and a metal material for forming the auxiliary electrode.
[0041]
Next, an EL layer is formed in the EL layer deposition chamber 114 described above. Here, in addition to the light-emitting layer, a stacked structure including a hole injection layer, a hole transport layer, a hole blocking layer (also referred to as a hole blocking layer), an electron transport layer, and an electron injection layer can be formed. In this embodiment, in addition to the light emitting material for forming the light emitting layer, layers such as a hole injection layer, a hole transport layer, a hole blocking layer (also referred to as a hole blocking layer), an electron transport layer, and an electron injection layer are formed. The organic material to be referred to is referred to as EL material. Here, a metal-containing tris (8-quinolinolato) aluminum complex (hereinafter referred to as Alq) _Three ), Bis (benzoquinolinolato) beryllium complex (hereinafter referred to as BeBq) ₂ And tris (2-phenylpyridine) iridium complex (hereinafter referred to as Ir (ppy)). _Three And other known metal complexes are also included in the EL material.
[0042]
Each of the film forming chambers constituting the EL layer forming chamber 114 is provided with a window on the side surface of the film forming chamber as means for observing the state of film formation of the EL material from the outside of the apparatus ( 102a-102e). The state during film formation can be observed from this window. Thereby, it can be confirmed that the film is formed normally. Each film forming chamber is provided with a film forming source, and a plurality of vapor deposition sources are provided so that a plurality of layers can be formed in one film forming chamber. Specifically, it is preferable to provide 1 to 8 types.
[0043]
Note that in this example, a case where a low molecular compound is used as a light-emitting material is described. Since the light emitting material made of a low molecular compound is preferably formed by vapor deposition, the EL layer deposition chamber 114 is provided with a vapor deposition device. In this embodiment, a layer for forming an EL layer other than the light emitting layer is also formed by vapor deposition.
[0044]
In this embodiment, an EL layer (red EL layer) that emits red light, an EL layer (green EL layer) that emits green light, and an EL layer (blue EL layer) that emits blue light are separately formed. The case of forming by vapor deposition will be described.
[0045]
A red EL layer deposition chamber 115 is connected to the third transfer chamber 112 through a gate 106h, a green EL layer deposition chamber 116 is connected through a gate 106i, and a blue EL layer formation chamber is further connected through a gate 106j. The membrane chamber 117 is connected. In these EL layer deposition chambers, in order to form a laminated film, it is necessary to provide a plurality of sample boats that are provided with EL materials. Specifically, it is preferable to provide 1 to 8 pieces.
[0046]
First, regarding formation of a red EL layer, film formation is performed in the red EL layer film formation chamber 115 of FIG. Note that in this embodiment, the case where an electron transport layer, a light-emitting layer, and a hole transport layer are formed in the red EL layer deposition chamber 115 will be described.
[0047]
First, as an electron transport layer, Alq _Three Is formed to a thickness of 20 nm by vapor deposition. Next, a light emitting layer is formed. In this embodiment, a low molecular red light emitting material is formed using a metal mask. Note that the metal mask is a red light emitting material that can emit red light by using a metal mask that can partially form a red light emitting layer where the red EL layer is formed (referred to as a red metal mask). Alq _Three The one doped with DCM-1 is used. Note that the thickness of the light emitting layer formed here is preferably 10 to 100 nm, but in this embodiment, these light emitting layers are formed to a thickness of 20 nm. What is necessary is just to adjust suitably about the film thickness to form into a film as needed.
[0048]
Then, α-NPD is formed on the red light emitting layer as a hole transport layer by vapor deposition. The thickness of the hole transport layer is preferably 20 to 80 nm, but in this embodiment, the hole transport layer is formed to have a thickness of 40 nm to complete the stacked structure of the EL layer. Thus, a red EL layer can be formed.
[0049]
Next, regarding formation of a green EL layer, film formation is performed in the green EL layer film formation chamber 116 of FIG. Here, the electron transport layer is formed using the same material as that used for forming the red EL layer, and further the hole blocking layer is formed using BCP. The hole blocking layer is formed with a thickness of 20 nm.
[0050]
Next, a green light emitting layer is formed. Here, a metal mask (referred to as a green metal mask) capable of partially forming a green light emitting layer is used where a green EL layer is formed. In addition, as green light emitting materials capable of obtaining green light emission, CBP and Ir (ppy) _Three And is formed by co-evaporation. Note that the thickness of the light emitting layer formed here is preferably 10 to 100 nm, but in this embodiment, these light emitting layers are formed to a thickness of 20 nm. What is necessary is just to adjust suitably about the film thickness to form into a film as needed.
[0051]
Then, a green EL layer can be formed by forming a hole transport layer on the green light emitting layer using the same material as that used for forming the red EL layer.
[0052]
Next, regarding formation of a blue EL layer, film formation is performed in the blue EL layer film formation chamber 117 of FIG. In this embodiment, the electron transport layer is formed using the same EL material as that used in forming the red EL layer.
[0053]
Next, a blue light-emitting layer is formed. Here, a metal mask (referred to as a blue metal mask) that can partially form a blue light-emitting layer is used where a blue EL layer is formed. Further, DPVBi which is a distyryl derivative is used as a blue light emitting material from which blue light emission can be obtained, and is formed by vapor deposition. Note that the thickness of the light emitting layer formed here is preferably 10 to 100 nm, but in this embodiment, these light emitting layers are formed to a thickness of 20 nm. Further, the film thickness to be formed may be appropriately adjusted as necessary.
[0054]
Then, a blue EL layer can be formed by forming a hole transport layer on the blue light emitting layer using the same material as that used for forming the red EL layer.
[0055]
Thus, an EL element having red, green, and blue EL layers can be formed. Note that FIG. 7 shows an element structure of an EL element formed in this example. FIG. 7A shows a basic element structure, FIG. 7B shows specific materials used for forming an EL element having a red EL layer, and FIG. 7C shows an EL element having a green EL layer. Specific materials used for forming the blue EL layer are shown, and FIG. 7D shows specific materials used for forming the blue EL layer, but the present invention is not limited to this. For example, FIG. ) Element Alq _Three It is also possible to form the layer of + DCM-1 with other materials. In this case, Alq _Three Alq without forming a layer of + DCM-1 _Three The light emitting layer can also be formed.
[0056]
Note that since the light-emitting material is extremely weak against moisture, it is necessary to keep the pressure in the EL layer film formation chamber 114 in a vacuum state during the EL layer film formation. Except for taking the substrate into and out of the film formation chamber, it is usually preferable to completely shut off the common chamber 112 using gates (106h to 106j) and control the vacuum state in the film formation chamber. The film formation pressure at this time is 1 × 10 ^-6 ~ 1x10 ^-Five It is necessary to set it to Torr.
[0057]
In the present invention, the luminescent material is not limited to those described above, and one or more known materials can be used in any combination. In addition, an organic compound that can use triplet excitation energy for light emission (referred to as a triplet compound in this specification) or the like can also be used in combination with a normal light emitting material.
[0058]
The third transfer chamber 112 is connected to the spare chamber 1 (118) via the gate 106k and is connected to the spare chamber 2 (119) via the gate 106l. An EL layer deposition chamber other than the blue EL layer may be used, or a deposition chamber for depositing an EL material by a method other than vapor deposition.
[0059]
In this example, an EL layer formed by a stacked structure including a hole transport layer, a light emitting layer, and an electron transport layer was shown. However, a hole injection layer, an electron injection layer, a hole blocking layer (a hole blocking layer) Or a light emitting layer alone.
[0060]
After forming each EL layer, the TFT substrate is moved again to the metal material vapor deposition chamber 107. Then, a first passivation film is formed between the EL layer and the anode by an evaporation method using resistance heating in order to prevent damage that may be given to the EL layer when the anode is formed on the EL layer.
[0061]
Note that as the material of the first passivation film used in this embodiment, since light generated in the EL layer is emitted in the direction of the first passivation film, it is necessary to use a metal material having high transmittance. Furthermore, in this embodiment, it is necessary to use a material having a large work function because it is formed on the anode side as viewed from the EL layer.
[0062]
Note that as the metal material for forming the first passivation film, specifically, a conductive film having a visible light transmittance of 70 to 100% and a work function of 4.5 to 5.5 is used. Note that the metal film is often opaque to visible light, and thus has a thickness of 0.5 to 20 nm (preferably 10 to 15 nm). Moreover, as a metal material used in a present Example, materials, such as platinum other than gold | metal | money and silver, are preferable. Note that the metal material for forming the first passivation film also needs to be provided in the sample boat in the metal material vapor deposition chamber.
[0063]
Next, reference numeral 108 denotes a film formation chamber in which film formation is performed by a sputtering method (also referred to as a sputtering method), which is called a sputtering chamber. In this embodiment, a counter electrode that becomes an anode is formed by sputtering. Usually, a vapor deposition method or a sputtering method is used for forming the counter electrode, but since the heat resistance of the EL material on which the EL layer has already been formed is about 100 ° C., in this embodiment, the film is formed by the sputtering method. I do.
[0064]
Note that an atmosphere in which oxygen is added to argon is set in the film formation chamber during film formation. Thus, the oxygen concentration in the formed film can be controlled, and a low resistance film with high transmittance can be formed. In any case, the gate 106c blocks the first transfer chamber 103.
[0065]
Further, in the sputtering chamber 108, a window 121 is attached to the side surface of the film forming chamber as a means for observing the film forming state from the outside of the apparatus as in the EL layer forming chamber. The state during film formation can be observed from this window 121. Thereby, it can be confirmed that the film is formed normally.
[0066]
As a material for the counter electrode (anode), a light-transmitting conductive film with low resistivity and high transmittance is used. Note that low resistivity means a sheet resistance of 50Ω / □ or less, and a light-transmitting conductive film having a high transmittance means a film having a transmittance of 70% or more. Specifically, materials such as ITO, which is an alloy of indium oxide and tin oxide, an alloy made of indium oxide and zinc oxide, and IDIXO are used.
[0067]
At this time, the sputtering chamber 108 is 1 × 10 6 like the other film forming chambers. ^-6 ~ 1x10 ^-Five It is possible to achieve a Torr vacuum state. However, the film formation is 1 × 10 ^-3 ~ 5x10 ^-2 It is carried out under Torr pressure. During the film formation process, the pressure in the chamber may be controlled by completely shutting off the first transfer chamber 103 using the gate 106c.
[0068]
Next, the first transfer chamber 103 and the gate 106d are connected to each other by a film formation chamber in which a film is formed by a plasma CVD method (or chemical vapor deposition method). Call it. In this embodiment, a second passivation film made of a diamond-like carbon film (hereinafter referred to as a DLC film) is formed on the EL element formed up to the counter electrode by the CVD method.
[0069]
In order to improve the adhesion between the counter electrode made of ITO and the second passivation film made of DLC, an insulating film such as silicon oxide, silicon nitride, and silicon film is formed in advance in the CVD chamber 109. Good.
[0070]
In this embodiment, a DLC (Diamond Like Carbon) film provided so as to cover the EL element is formed by diamond bonding (sp ^Three Bond) and graphite bond (sp ² It is an amorphous film in which (bonding) is mixed. The properties of the DLC film are 1550 (cm ^-1 ) With an asymmetric peak around 1300 (cm ^-1 ) Has a Raman spectrum distribution with shoulders around, and shows a hardness of 15 to 25 (GPa) as measured with a microhardness meter. A DLC film is called this because it has many properties similar to diamond, such as high hardness, chemical inertness, transparency from visible light to infrared light, and high electrical resistance. The The DLC film is suitable as a protective film because it does not transmit oxygen or moisture due to the above-described properties and dense structure.
[0071]
As a method for forming the DLC film, a negative self-bias is applied to the electrode, and the source gas accelerated by this negative self-bias voltage is formed on the anode of the EL element to provide a dense DLC film. be able to. The source gas may be a hydrocarbon, for example, a saturated hydrocarbon such as methane, ethane, propane, or butane, an unsaturated hydrocarbon such as ethylene, or an aromatic system such as benzene or toluene. Alternatively, a halogenated hydrocarbon in which one or a plurality of hydrocarbon molecules are replaced with a halogen-based element such as F, Cl, or Br may be used.
[0072]
Further, the sealing chamber 110 is connected to the first transfer chamber 103 through the gate 106e. In the sealing chamber 110, a process for finally sealing the EL element in the sealed space is performed. Specifically, the EL element formed on the TFT substrate is mechanically sealed with a sealing material (also referred to as a housing material), or is sealed with a thermosetting resin or a photosensitive resin.
[0073]
As the sealing material, materials such as glass, ceramics, and metal can be used. However, when light is emitted to the sealing material side, it must be translucent. In addition, the sealing material and the substrate after all the above treatments are bonded together using a thermosetting resin or a photosensitive resin, and the resin is cured by heat treatment or ultraviolet light irradiation treatment to form a sealed space. It is also possible to provide a desiccant such as barium oxide in the sealed space.
[0074]
It is also possible to encapsulate the EL element with only a thermosetting resin or a photosensitive resin without using a sealing material. In this case, a thermosetting resin or a photosensitive resin may be provided so as to cover at least the side surface of the substrate that has been subjected to all treatments, and then cured. This is to prevent moisture from entering from the film interface.
[0075]
Each of the above processes (exhaust, transport, film forming process, etc.) can be fully automatic control using a computer using a touch panel and a sequencer.
[0076]
The greatest feature of the thin film forming apparatus having the above configuration is that a pixel electrode with high accuracy can be formed on the TFT substrate by a vapor deposition method by the alignment function by the CCD when the pixel electrode is formed. By providing the first passivation film thereon, damage to the EL layer, which becomes a problem when an anode is formed on the EL layer using a sputtering method, can be prevented.
[0077]
In the present invention, all the thin film forming chambers formed on the TFT substrate are mounted on a multi-chamber thin film forming apparatus. Therefore, it is possible to start from the process of forming the pixel electrode on the TFT substrate to the process of forming the counter electrode, that is, the EL element can be formed without being exposed to the outside.
[0078]
As a result, light from the EL layer can be emitted to the side opposite to the TFT substrate, that is, a light emitting device having a top emission EL element can be formed by simple means.
[0079]
[Example 2]
In this embodiment, FIG. 2 shows an example in which a part of the thin film forming apparatus shown in FIG. 1 is changed. Specifically, a processing chamber 201 for evacuation is provided between the first transfer chamber 103 and the EL layer deposition chamber 203 so that only the EL layer deposition chamber can perform processing at normal pressure (atmospheric pressure). Shows the configuration. In addition, Example 1 can be cited about the description regarding parts other than a change point. Although only one EL layer deposition chamber is provided here, a plurality of EL layer deposition chambers may be provided as necessary.
[0080]
In Example 1, the inside of the thin film forming apparatus is entirely in a vacuum state, and the EL layer is formed under vacuum. However, when the EL layer is formed using a polymer material, it is inactive. In order to carry the substrate to the EL layer deposition chamber 203 because it is performed at normal pressure filled with gas, the pressure difference between the EL deposition chamber and the other thin film forming apparatus must be overcome.
[0081]
Therefore, in this embodiment, first, the evacuation processing chamber 201 is depressurized to the same pressure as that of the first transfer chamber 103, and in that state, the gate 106d is opened to transfer the substrate. Then, after closing the gate 106d, the inside of the processing chamber 201 for evacuation is purged with an inert gas, and when returning to normal pressure, the gate 202 is opened and the substrate is transferred to the EL layer deposition chamber 203. Here, the entire stage may be transported together with the substrate, or may be performed by a dedicated transport means.
[0082]
Then, after the EL layer forming step is completed, the gate 202 is opened, the substrate is transferred to the processing chamber 201 for evacuation, and evacuation is performed with the gate 202 and the gate 106d closed. When the vacuum evacuation processing chamber 201 reaches the same reduced pressure state as the first transfer chamber 103 in this way, the gate 106d is opened and the substrate is transferred to the first transfer chamber 103.
[0083]
With the above configuration, the substrate can be handled under vacuum except for the EL layer deposition chamber 203.
[0084]
Example 3
In this embodiment, the case where the present invention is applied to an in-line thin film forming apparatus will be described with reference to FIG. Note that this basically corresponds to the case where the multi-chamber thin film forming apparatus in FIG. 1 is changed to the in-line method, and therefore, the description of each processing chamber may refer to the first embodiment.
[0085]
In FIG. 3, reference numeral 301 denotes a first transfer chamber in which a TFT substrate is carried in, and a carrier 302 is installed. The load chamber 301 is connected to the first transfer chamber 304 via the gate 303. A first transfer mechanism 305 is provided in the first transfer chamber 304. In addition, a metal material vapor deposition chamber 307 is connected to the first transfer chamber via a gate 306, and further connected to an EL layer deposition chamber 309 via a gate 308.
[0086]
The TFT substrate in which the pixel electrode is formed in the metal material deposition chamber 307 and the EL layer is formed in the EL layer deposition chamber 309 is carried into the second transfer chamber 311 connected through the gate 310. A third transfer chamber 313 is connected to the second transfer chamber 311 via a gate 312. The third transfer chamber 313 is provided with a second transfer mechanism 314, whereby the substrate is carried out of the third transfer chamber 313.
[0087]
A sputtering chamber 316 is connected to the third transfer chamber 313 via a gate 315, and a CVD chamber 318 is further connected via a gate 317. Then, the substrate in which the counter electrode is formed in the sputtering chamber 316 and the processing is completed in the CVD chamber 318 is carried into the fourth transfer chamber 320 connected through the gate 319.
[0088]
In the CVD chamber 318, a diamond-like carbon film (hereinafter referred to as a DLC film) is formed on the EL element formed up to the counter electrode in the sputtering chamber 316. In this embodiment, in order to improve the adhesion between the counter electrode and the DLC film, an insulating film containing silicon such as a silicon nitride film or a silicon oxide film is formed on the counter electrode, and a DLC film is formed thereon. It was.
[0089]
Next, a fifth transfer chamber 322 is connected to the fourth transfer chamber 320 through a gate 321. The fifth transfer chamber 322 is provided with a third transfer mechanism 323, whereby the substrate is carried out of the fourth transfer chamber 320. Further, a sealing chamber 325 is connected to the fifth transfer chamber 322 through a gate 324.
[0090]
In this example, a TFT substrate on which a DLC film was formed as an EL element protective film was sealed in a sealing chamber 325 using a sealing agent or the like.
[0091]
Further, an unload chamber 327 for unloading the substrate is connected to the fifth transfer chamber 322 through a gate 326. A carrier 328 is installed in the unload chamber 327. Note that the carrier 328 accommodates the TFT substrate that has been subjected to all the processes in the thin film forming apparatus.
[0092]
As described above, the present embodiment shows an in-line thin film forming apparatus that connects a plurality of film forming chambers and sealing chambers to perform consistent processing and encloses EL elements.
[0093]
Example 4
In this embodiment, when the present invention is applied to an in-line type thin film forming apparatus, all the processing chambers are connected in series, and there is a difference from FIG. 3 in that no transfer chamber is provided between the processing chambers. 4 will be described. Note that this basically corresponds to the case where the multi-chamber thin film forming apparatus in FIG. 1 is changed to the in-line method, and therefore, the description of each processing chamber may refer to the first embodiment.
[0094]
In FIG. 4A, 401 is a load chamber where a TFT substrate is carried in, and a carrier 402 is installed. The load chamber 401 is connected to the metal material vapor deposition chamber 1 (404) via a gate 403, and is further connected to the metal material vapor deposition chamber 2 (406) via a gate 405.
[0095]
The TFT substrate in which the pixel electrode is formed in the metal material deposition chamber 1 (404) and the auxiliary electrode is formed in the metal material deposition chamber 2 (406) is connected to the green EL layer deposition chamber 408 through the gate 407, and the gate A red EL layer deposition chamber 410 is connected via 409, and a blue EL layer deposition chamber 412 is connected via a gate 411. In this embodiment, the green EL layer deposition chamber 408, the red EL layer deposition chamber 410, and the blue EL layer deposition chamber 412 are collectively referred to as an EL layer deposition chamber.
[0096]
The blue EL layer deposition chamber 412 is connected to the metal material deposition chamber 3 (414) via the gate 413, and further connected to the sputtering chamber 416 via the gate 415, and further to the CVD chamber 418 via the gate 417. Are connected. Note that in FIG. 4A, the gate 413 connected to the EL layer deposition chamber 412 is cut halfway for the sake of space, but actually, the metal is further maintained while maintaining the linear direction. It is connected to the material vapor deposition chamber 3 (414).
[0097]
Then, the substrate that has been processed in the CVD chamber 418 is processed in the sealing chamber 420 connected through the gate 419 and then loaded into the carrier 423 in the unload chamber 422 connected through the gate 421. .
[0098]
FIG. 4B shows a cross-sectional structure of the device shown in FIG. In this embodiment, since the transfer chamber and transfer mechanism are not provided for transfer between the film forming chambers and the process chambers, the TFT substrate moves between the process chambers together with the stage 424 provided with the TFT substrate. It has a structure. Note that the symbols illustrated in FIG. 4B are the same as those illustrated in FIG. 4A, and thus may be referred to as appropriate.
[0099]
In addition, by using the thin film forming apparatus shown in this embodiment, a plurality of film forming chambers and sealing chambers are connected and integrated processing is performed without providing a transfer chamber, so that EL elements can be sealed with high throughput. Can be performed.
[0100]
Example 5
In Examples 1 to 4, a configuration in which a metal material deposition chamber, an EL layer deposition chamber, a sputtering chamber, a CVD chamber, and a sealing chamber are provided as a plurality of processing chambers is taken as an example. It is not limited to. If necessary, two or more sputtering chambers may be provided, or a plurality of other film forming chambers may be provided.
[0101]
Further, after sealing the EL element, a final passivation film may be formed by covering the EL element with an insulating film, preferably an insulating film containing silicon, or a DLC film as shown in the fourth embodiment. It is valid. Note that as the insulating film containing silicon, a silicon nitride film or a silicon nitride oxide film with low oxygen content is preferable.
[0102]
As described above, the present invention is not limited to a combination of a plurality of film formation chambers, and what function the film formation chambers are provided to may be determined as appropriate by the practitioner. In addition, Example 1 can be cited for the description regarding these film formation chambers.
[0103]
Example 6
In this example, FIG. 5 shows an example in which the thin film forming apparatus of the present invention is used for manufacturing an active matrix light-emitting device. In this embodiment, the apparatus described in Embodiment 1 will be described as an example. Therefore, the details of film formation performed in each film formation chamber can be referred to the description of Example 1.
[0104]
First, as shown in FIG. 5A, a TFT 502 is formed over a glass substrate 501. In the pixel 503, a method for manufacturing the TFT 502 may follow a known TFT manufacturing method. Of course, it may be a top gate type TFT or a bottom gate type TFT.
[0105]
First, the TFT substrate shown in FIG. 5A is placed in the carrier 102 and installed in the load chamber 101 of the thin film forming apparatus shown in FIG.
[0106]
First, the TFT substrate is transferred to the metal material vapor deposition chamber 107 by the first transfer mechanism 105, and the pixel electrode 504 is formed there. Note that in this embodiment, the metal mask and the TFT substrate may be aligned by a CCD provided in a vacuum evacuated film formation chamber, and the pixel electrode 504 may be formed using a film containing aluminum as a main component. In this embodiment, since the light emitted from the EL element is emitted to the side opposite to the TFT substrate (upward in FIG. 5A), the pixel electrode 504 functions as a reflective electrode. For this reason, it is preferable to use a material having as high a reflectance as possible.
[0107]
Thus, as shown in FIG. 5B, pixels 503 having TFTs 502 and pixel electrodes (cathodes) 504 are formed in a matrix. The TFT 502 controls the current flowing through the pixel electrode 504.
[0108]
Further, in the metal material deposition chamber 107, the auxiliary electrode 505 is selectively deposited on the pixel electrode 504 after being aligned with the TFT substrate by CCD using a metal mask in the same manner as the pixel electrode 504. To form. Here, lithium acetylacetonate (Liacac) is used as the auxiliary electrode material.
[0109]
After obtaining the state of FIG. 5C, the TFT substrate is transferred to the second transfer chamber 111 by the first transfer mechanism 105, and further passed through the third transfer chamber 112 by the second transfer mechanism 113, and the red EL layer deposition chamber. Then, the red light emitting layer is formed by vapor deposition using a metal mask.
[0110]
Next, the TFT substrate is transported to the green EL layer deposition chamber 116 by the second transport mechanism 113, and a green light emitting layer is formed by vapor deposition using a metal mask.
[0111]
Further, the TFT substrate is transported to the blue EL layer deposition chamber 117 by the second transport mechanism 113, and a blue light emitting layer is formed by vapor deposition using a metal mask. Thus, red, green, and blue light emitting layers can be formed. Note that the EL layer 506 formed in this embodiment has a single-layer structure including only a light-emitting layer (FIG. 5D).
[0112]
After obtaining the state of FIG. 5D, the TFT substrate is again transferred to the metal material vapor deposition chamber 107, and a first passivation film 507 made of a metal film having a large work function is formed by vapor deposition. In this example, gold (Au) was formed to a thickness of 5 nm (FIG. 5E).
[0113]
Further, the TFT substrate on which the first passivation film 507 is formed is taken out from the metal material deposition chamber 107 by the transport mechanism 105 and transported to the sputtering chamber 108.
Therefore, a counter electrode is formed on the first passivation film 507 using a light-transmitting conductive film made of a material such as a compound of indium oxide and tin oxide (called ITO) or a compound of indium oxide and zinc oxide.
[0114]
In this embodiment, the counter electrode (anode) 508 is formed by using a compound in which indium oxide is mixed with 10 to 15% zinc oxide. In this way, the state of FIG.
[0115]
Thereafter, the TFT substrate on which the counter electrode 508 is formed is taken out from the sputtering chamber 108 by the transfer mechanism 105 and transferred to the CVD chamber 109. Therefore, a second passivation film (not shown) made of an insulating material containing silicon such as a silicon nitride film or silicon oxide may be formed by plasma CVD as necessary.
[0116]
Further, the TFT substrate on which the second passivation film is formed is removed from the CVD chamber 109 by the transfer mechanism 105 and transferred to the sealing chamber 110. Therefore, sealing may be performed using a sealing material such as a glass substrate or a plastic substrate.
[0117]
Note that this embodiment shows an example in which the thin film forming apparatus of the present invention is used for manufacturing an active matrix light-emitting device, but it can also be used for manufacturing a simple matrix light-emitting device. The configuration of this embodiment may be implemented using any of the thin film forming apparatuses of Examples 1 to 5.
[0118]
Example 7
In this embodiment, an example using the thin film forming apparatus of the present invention in manufacturing an active matrix light-emitting device is shown in FIG. In the present embodiment, the apparatus described in the second embodiment will be described as an example. Therefore, the details of the film formation performed in each film formation chamber can be referred to the description of Example 2.
[0119]
First, as shown in FIG. 6A, a TFT 602 is formed over a glass substrate 601. In this embodiment, a glass substrate is used, but any material may be used as the substrate. Further, a manufacturing method of the TFT 602 may follow a known TFT manufacturing method. Of course, it may be a top gate type TFT or a bottom gate type TFT.
[0120]
First, the TFT substrate shown in FIG. 6A is placed in the carrier 102 and installed in the load chamber 101 of the thin film forming apparatus shown in FIG.
[0121]
Then, the TFT substrate is transferred to the metal material vapor deposition chamber 107 by the transfer mechanism 105, and a pixel electrode (cathode) 604 is formed. Note that the pixel electrode 604 may be formed using a film containing aluminum as a main component. In this embodiment, since the light emitted from the EL element is emitted to the side opposite to the TFT substrate (upward in FIG. 6A), the pixel electrode 604 functions as a reflective electrode. Therefore, a material having aluminum (Al) formed in a film thickness of 60 nm was used as a material having as high a reflectance as possible.
[0122]
Thus, as shown in FIG. 6B, pixels 603 each having a TFT 602 and a pixel electrode (cathode) 604 are formed in a matrix. The TFT 602 controls the current flowing through the pixel electrode 604.
[0123]
Further, in the metal material vapor deposition chamber 107, the alignment with the TFT substrate is performed by the CCD using the metal mask in the same manner as the film formation of the pixel electrode 604, and then the auxiliary electrode 605 is selectively formed on the pixel electrode 604 by vapor deposition. To form. In this example, lithium fluoride (LiF) was used as the auxiliary electrode material and was formed to a thickness of 0.5 nm.
[0124]
When the state of FIG. 6C is obtained, the TFT substrate is transferred to the processing chamber 201 for evacuation, where the gate 106d is closed. Then, after the pressure in the evacuation processing chamber 201 is set to a normal pressure (atmospheric pressure), the gate 202 is opened and transferred to the EL layer deposition chamber 203, which contains a polymer EL material by spin coating. Apply the solution. In this example, first, a film having a thickness of 30 nm is formed using an aqueous solution in which PEDOT, which is a polythiophene derivative, is dissolved in water as a hole injection layer. Next, a film having a thickness of 80 nm is formed using a solution of polyphenylene vinylene (PPV) dissolved in dichloromethane. Of course, a combination of another polymer EL material and an organic solvent may be used (FIG. 6D).
[0125]
After the EL layer 606 is formed, the TFT substrate is transferred again to the vacuum exhaust treatment chamber 201. After the gate 202 is closed, the inside of the vacuum exhaust treatment chamber 201 is evacuated. When the pressures in the first transfer chamber and the vacuum exhaust processing chamber 201 become the same, the gate 106d is opened and the TFT substrate is taken out by the transfer mechanism 105.
[0126]
After obtaining the state of FIG. 6D, the TFT substrate is transferred to the metal material vapor deposition chamber 107, and a first passivation film 607 made of a metal film having a small work function is formed by vapor deposition. In this example, gold (Au) was used (FIG. 6E).
[0127]
Further, the TFT substrate on which the first passivation film 607 is formed is taken out from the metal material deposition chamber 107 by the transport mechanism 105 and transported to the sputtering chamber 108. Therefore, a counter electrode 608 is formed on the first passivation film 607 using a light-transmitting conductive film such as a compound of indium oxide and tin oxide (called ITO) or a compound of indium oxide and zinc oxide.
[0128]
In this embodiment, the counter electrode (anode) 608 is formed by using a compound in which indium oxide is mixed with 10 to 15% zinc oxide. In this way, the state of FIG.
[0129]
Thereafter, the TFT substrate on which the counter electrode 608 is formed from the sputtering chamber 108 is taken out by the transfer mechanism 105 and transferred to the CVD chamber 109. Therefore, a second passivation film (not shown) made of an insulating material containing silicon such as a silicon nitride film or silicon oxide may be formed by plasma CVD as necessary.
[0130]
Further, the TFT substrate on which the second passivation film is formed is removed from the CVD chamber 109 by the transfer mechanism 105 and transferred to the sealing chamber 110. Therefore, sealing may be performed using a sealing material such as a glass substrate or a plastic substrate.
[0131]
Note that this embodiment shows an example in which the thin film forming apparatus of the present invention is used for manufacturing an active matrix light-emitting device, but it can also be used for manufacturing a simple matrix light-emitting device. The configuration of this embodiment may be implemented using any of the thin film forming apparatuses of Examples 1 to 5.
[0132]
Example 8
In this embodiment, a method for manufacturing a metal mask used in forming a pixel electrode in the film formation apparatus of the present invention will be described.
[0133]
As a technique for creating a metal mask, there is an etching method in which a resist is patterned on a metal plate such as stainless steel and then etched from both sides with an appropriate etchant solution. However, this method is limited in that a pattern having a spacing of 100 μm is formed on a stainless substrate having a thickness of 100 μm.
[0134]
Therefore, the metal mask used in the present invention is one produced by electroforming. Specifically, a resist is formed with a film thickness of 25 to 50 μm on the electrodeposited metal serving as a matrix. Then, a pattern is formed on the resist by baking using a negative pattern film. Further, by developing this, a patterned resist is formed.
[0135]
A metal thin film can be grown to about 10 μm on the patterned resist by electroless plating. Thereafter, the resist is removed, and the metal thin film is further removed from the matrix, whereby a metal mask having a fine pattern can be formed.
[0136]
Further, when using a metal mask in film formation, it is required to keep the distance between the metal mask and the TFT substrate small. Therefore, in the present invention, if a stage is provided with a TFT substrate, a magnet is provided, and the metal mask and the TFT substrate are brought into close contact with each other by magnetic force, and when the film is formed, the defect of the pattern produced due to bending, floating or misalignment of the metal mask. Can be prevented.
[0137]
Therefore, it is preferable to use materials such as stainless steel, nickel and chromium for the metal mask formed in this embodiment. That is, by using the metal mask formed in this way, a vapor deposition pattern of 10 μm or less can be formed on the TFT substrate. In addition, the configuration of the present embodiment can be implemented in combination with any of the configurations of Embodiments 1 to 5.
[0138]
Example 9
Since the light-emitting device manufactured according to the present invention is a self-luminous type, it is superior in visibility in a bright place and has a wide viewing angle as compared with a liquid crystal display device. Therefore, it can be used for display portions of various electric appliances.
[0139]
As an electric appliance using a light emitting device manufactured according to the present invention, a video camera, a digital camera, a goggle type display (head mounted display), a navigation system, a sound reproduction device (car audio, audio component, etc.), a notebook personal computer, a game A device, a portable information terminal (mobile computer, mobile phone, portable game machine, electronic book, etc.), an image playback device equipped with a recording medium (specifically, a recording medium such as a digital video disc (DVD)) And a device provided with a display device capable of displaying an image). In particular, a portable information terminal that often has an opportunity to see a screen from an oblique direction emphasizes the wide viewing angle, and thus a light-emitting device including an EL element is preferably used. Specific examples of these electric appliances are shown in FIG.
[0140]
FIG. 8A illustrates a display device, which includes a housing 2001, a support base 2002, a display portion 2003, a speaker portion 2004, a video input terminal 2005, and the like. The light-emitting device manufactured according to the present invention can be used for the display portion 2003. Since a light-emitting device having an EL element is a self-luminous type, a backlight is not needed and a display portion thinner than a liquid crystal display device can be obtained. The display devices include all information display devices for personal computers, for receiving TV broadcasts, for displaying advertisements, and the like.
[0141]
FIG. 8B shows a digital still camera, which includes a main body 2101, a display portion 2102, an image receiving portion 2103, operation keys 2104, an external connection port 2105, a shutter 2106, and the like. The light-emitting device manufactured according to the present invention can be used for the display portion 2102.
[0142]
FIG. 8C shows a laptop personal computer, which includes a main body 2201, a housing 2202, a display portion 2203, a keyboard 2204, an external connection port 2205, a pointing mouse 2206, and the like. The light-emitting device manufactured according to the present invention can be used for the display portion 2203.
[0143]
FIG. 8D illustrates a mobile computer, which includes a main body 2301, a display portion 2302, a switch 2303, operation keys 2304, an infrared port 2305, and the like. The light-emitting device manufactured according to the present invention can be used for the display portion 2302.
[0144]
FIG. 8E illustrates a portable image reproducing device (specifically, a DVD reproducing device) provided with a recording medium, which includes a main body 2401, a housing 2402, a display portion A2403, a display portion B2404, and a recording medium (DVD or the like). A reading unit 2405, operation keys 2406, a speaker unit 2407, and the like are included. Although the display portion A 2403 mainly displays image information and the display portion B 2404 mainly displays character information, the light-emitting device manufactured according to the present invention can be used for the display portions A, B 2403, and 2404. Note that an image reproducing device provided with a recording medium includes a home game machine and the like.
[0145]
FIG. 8F illustrates a goggle type display (head mounted display), which includes a main body 2501, a display portion 2502, and an arm portion 2503. The light emitting device manufactured according to the present invention can be used for the display portion 2502.
[0146]
FIG. 8G illustrates a video camera, which includes a main body 2601, a display portion 2602, a housing 2603, an external connection port 2604, a remote control receiving portion 2605, an image receiving portion 2606, a battery 2607, an audio input portion 2608, operation keys 2609, and an eyepiece. Part 2610 and the like. The light-emitting device manufactured according to the present invention can be used for the display portion 2602.
[0147]
Here, FIG. 8H illustrates a mobile phone, which includes a main body 2701, a housing 2702, a display portion 2703, an audio input portion 2704, an audio output portion 2705, operation keys 2706, an external connection port 2707, an antenna 2708, and the like. The light-emitting device manufactured according to the present invention can be used for the display portion 2703. Note that the display portion 2703 can reduce power consumption of the mobile phone by displaying white characters on a black background.
[0148]
If the emission luminance of the organic material is increased in the future, the light including the output image information can be enlarged and projected by a lens or the like and used for a front type or rear type projector.
[0149]
In addition, the electric appliances often display information distributed through electronic communication lines such as the Internet or CATV (cable television), and in particular, opportunities to display moving image information are increasing. Since the response speed of the organic material is very high, the light-emitting device is preferable for displaying moving images.
[0150]
In addition, since the light emitting portion of the light emitting device consumes power, it is preferable to display information so that the light emitting portion is minimized. Therefore, when a light emitting device is used for a display unit mainly including character information, such as a portable information terminal, particularly a mobile phone or a sound reproduction device, it is driven so that character information is formed by the light emitting part with the non-light emitting part as the background. It is preferable to do.
[0151]
As described above, the applicable range of the light-emitting device manufactured using the manufacturing method of the present invention is so wide that the light-emitting device can be used for electric appliances in various fields. In addition, in the electric appliance of this embodiment, a light-emitting device manufactured by carrying out the present invention can be used for the display portion.
[0152]
【Effect of the invention】
In the formation of the pixel electrode of the EL element, by providing an alignment function in the film formation chamber, it is possible to form a fine pattern by vapor deposition using a metal mask, and from a film having a high transmittance after the EL layer is formed. By providing the first passivation film, it is possible to prevent damage to the EL layer due to sputtering during the formation of the counter electrode. This can solve a problem that occurs in manufacturing a light-emitting device having a top-emission-type element. Furthermore, by performing these treatments with an integrated apparatus such as a multi-chamber method or an inline method, an EL element using an EL material can be manufactured without being exposed to the atmosphere. Therefore, the reliability of the light emitting device using the EL material can be significantly improved.
[Brief description of the drawings]
FIG. 1 is a diagram showing a configuration of a thin film forming apparatus of the present invention.
FIG. 2 is a diagram showing a configuration of a thin film forming apparatus of the present invention.
FIG. 3 is a diagram showing a configuration of a thin film forming apparatus of the present invention.
FIG. 4 is a diagram showing a configuration of a thin film forming apparatus of the present invention.
FIGS. 5A and 5B illustrate a manufacturing process of an active matrix light-emitting device. FIGS.
6A and 6B illustrate a manufacturing process of an active matrix light-emitting device.
7A and 7B illustrate an element structure of a light-emitting device of the present invention.
FIG. 8 illustrates an example of an electric appliance.

Claims (4)

A manufacturing method of a top emission type light emitting device,
A pixel electrode is formed as a predetermined pattern by a vacuum deposition method using a first metal mask ,
An auxiliary electrode is formed as a predetermined pattern on the pixel electrode by a vacuum deposition method using a second metal mask ,
An organic film containing a light emitting material is formed on the auxiliary electrode as a predetermined pattern by a vacuum deposition method using a third metal mask ,
Forming a first passivation film on the organic film by a vacuum deposition method;
A light-transmitting conductive film is formed as a counter electrode on the first passivation film by a sputtering method,
Forming a second passivation film on the translucent conductive film by a plasma CVD method;
The pixel electrode is an aluminum film,
The auxiliary electrode includes a Group 1 element or a Group 2 element of the Periodic Table;
The first passivation film is a metal film having a transmittance of 70% or more and a work function of 4.5 to 5.5 eV,
The translucent conductive film is formed using an alloy material of indium oxide and tin oxide or an alloy material of indium oxide and zinc oxide having a sheet resistance of 50Ω / □ or less and a transmittance of 70% or more. The film
The second passivation film is a DLC film ;
Before Symbol pixel electrode, the auxiliary electrode, the organic layer, the first passivation film, the transparent conductive film and the second passivation film being formed continuously without exposure to the atmosphere A method for manufacturing a light-emitting device. In claim 1,
The formation of the pixel electrode , the auxiliary electrode , the organic film, the first passivation film, the translucent conductive film, and the second passivation film is continuously processed under reduced pressure. A method for manufacturing a light-emitting device. In claim 1 or 2,
The method for manufacturing a light-emitting device, wherein the auxiliary electrode is an oxide or fluoride of a Group 1 element or a Group 2 element in the periodic table. In claim 1 or 2,
The auxiliary electrode, a manufacturing method of a light-emitting device according to claim Oh Rukoto lithium acetylacetonate.

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