JPH08111285A - Manufacture of organic electroluminescent element and its device - Google Patents
Manufacture of organic electroluminescent element and its deviceInfo
- Publication number
- JPH08111285A JPH08111285A JP6244244A JP24424494A JPH08111285A JP H08111285 A JPH08111285 A JP H08111285A JP 6244244 A JP6244244 A JP 6244244A JP 24424494 A JP24424494 A JP 24424494A JP H08111285 A JPH08111285 A JP H08111285A
- Authority
- JP
- Japan
- Prior art keywords
- vacuum chamber
- organic
- wafer
- layer
- working
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は有機エレクトロルミネセ
ンス（ＥＬ）素子の製造方法及びその装置に係り、特に
有機エレクトロルミネセンス素子の製造に際し、基板上
に透明電極を形成した後の工程から保護膜形成の工程ま
でを、外気の酸化雰囲気から隔離して連続して真空室中
に行い、保護膜形成後、外気中に取出すようにしたもの
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an organic electroluminescence (EL) element and an apparatus therefor, and particularly, in manufacturing an organic electroluminescence element, protecting from a step after forming a transparent electrode on a substrate. The present invention relates to a device in which the steps up to the film formation are isolated from the oxidizing atmosphere of the outside air and continuously performed in a vacuum chamber, and after forming the protective film, the film is taken out into the outside air.
【０００２】[0002]
【従来の技術】有機ＥＬ素子は、薄形の新しい発光源と
して注目されている。従来有機ＥＬ素子を製造するため
に、図４に示す如く、ガラス基板３０上にＩＴＯの如き
透明電極３１を蒸着又はスパッタリングにより形成して
これをパターニングしたあと、真空室にこの透明電極３
１の形成された基板を配置して透明電極３１の上に、正
孔注入輸送層３２、発光層３３、電子注入輸送層３４、
陰極３５、Ｓｉ層３６、保護膜３７を蒸着させたり、あ
るいはスパッタリングにより順次形成していた。2. Description of the Related Art Organic EL devices have been attracting attention as new thin light emitting sources. In order to manufacture a conventional organic EL device, as shown in FIG. 4, a transparent electrode 31 such as ITO is formed on a glass substrate 30 by vapor deposition or sputtering and patterned, and then the transparent electrode 3 is placed in a vacuum chamber.
The substrate on which No. 1 is formed is arranged and on the transparent electrode 31, a hole injecting and transporting layer 32, a light emitting layer 33, an electron injecting and transporting layer 34,
The cathode 35, the Si layer 36, and the protective film 37 were sequentially formed by vapor deposition or sputtering.
【０００３】[0003]
【発明が解決しようとする課題】従って、正孔注入輸送
層３２、発光層３３、電子注入輸送層３４、陰極３５、
Ｓｉ層３６、保護膜３７を形成するために、その度に真
空室を常圧に戻してそれぞれの工程に適した材料を入
れ、真空にしたあと蒸着あるいはスパッタリングさせる
ことが必要であった。Therefore, the hole injecting and transporting layer 32, the light emitting layer 33, the electron injecting and transporting layer 34, the cathode 35,
In order to form the Si layer 36 and the protective film 37, it was necessary to return the vacuum chamber to a normal pressure each time, put in a material suitable for each step, and after vacuuming, vapor deposition or sputtering.
【０００４】そのため、各工程の度に常圧に戻すことが
必要となり酸化雰囲気に露出されたり、製造時間が長く
なるという欠点があった。従って本発明の目的は、前記
各工程毎に一旦常圧に戻す必要のない有機ＥＬ素子の製
造方法及びその装置を提供することである。Therefore, it is necessary to return the pressure to normal pressure after each process, and there are drawbacks that it is exposed to an oxidizing atmosphere and the manufacturing time becomes long. Therefore, it is an object of the present invention to provide a method for manufacturing an organic EL element and an apparatus therefor that do not need to return to normal pressure once in each of the steps.
【０００５】[0005]
【課題を解決するための手段】前記目的を達成するた
め、本発明では、図１に示す如く、中空柱状の真空槽１
に、基板挿入取出部１０と、複数の作業用真空室１１〜
１５を円周上に配置する。そして真空槽１の中央部分に
は、ロボット２を設置する。ロボット２には、上下左右
方向に伸縮回転可能に構成された例えば３本のアーム２
−１、２−２、２−３が設けられ、そのアーム２−３の
先端には保持部３が形成されている。In order to achieve the above object, in the present invention, as shown in FIG. 1, a hollow columnar vacuum chamber 1 is used.
In addition, the substrate insertion / extraction unit 10 and the plurality of work vacuum chambers 11 to 11
Place 15 on the circumference. The robot 2 is installed in the center of the vacuum chamber 1. The robot 2 includes, for example, three arms 2 configured to be capable of extending and contracting in the vertical and horizontal directions.
-1, 2-2, 2-3 are provided, and the holding portion 3 is formed at the tip of the arm 2-3.
【０００６】作業用真空室１１〜１６は蒸着室あるいは
スパッタリング室として構成される。蒸着室は、図１
（Ｂ）に断面が示されるように、支持基部６、加熱部
７、蒸着源１７等が備えられ、支持基部６上に、後述す
るように載置された有機ＥＬウェーハ４に蒸着源からの
物質が被膜される。スパッタリング室は、図１（Ｃ）に
断面が示されるように、支持部６と電極１８、ターゲッ
ト１９が用意され、電極１８には高周波源８が接続され
る。The working vacuum chambers 11 to 16 are configured as vapor deposition chambers or sputtering chambers. The deposition chamber is shown in Figure 1.
As shown in the cross section in (B), a support base 6, a heating unit 7, a vapor deposition source 17 and the like are provided, and an organic EL wafer 4 mounted on the support base 6 as described later is separated from the vapor deposition source. The substance is coated. As shown in the cross section of FIG. 1C, the sputtering chamber is provided with a supporting portion 6, an electrode 18, and a target 19, and a high frequency source 8 is connected to the electrode 18.
【０００７】[0007]
【作用】先ず、ガラス基板に透明電極を形成してこれを
パターニングした有機ＥＬウェーハ４を後述する保持板
に保持させたあと、これを基板挿入取出部１０を開き、
真空室１１内のロボット２の保持部３に保持させる。こ
のようにして有機ＥＬウェーハ４を保持させたあと、こ
れを真空槽１内に入れ、真空にする。First, a transparent electrode is formed on a glass substrate, and an organic EL wafer 4 obtained by patterning the transparent electrode is held by a holding plate, which will be described later, and then the substrate insertion / removal section 10 is opened.
It is held by the holding unit 3 of the robot 2 in the vacuum chamber 11. After the organic EL wafer 4 is held in this way, it is placed in the vacuum chamber 1 and evacuated.
【０００８】それから作業用真空室１１のゲート２０を
開き、有機ＥＬウェーハ４をその支持部６に保持させて
正孔注入輸送層を蒸着させる。次にロボット２はこの有
機ＥＬウェーハ４を作業用真空室１２の支持部６に保持
させ、発光層を蒸着させる。このようにして作業用真空
室１３にて電子注入輸送層を蒸着し、作業用真空室１４
にて陰極を蒸着し、作業用真空室１５にてＳｉ層をスパ
ッタリングし、作業用真空室１６にて保護膜をスパッタ
リングで形成したあと、真空槽１を常圧に戻し、基板挿
入取出部１０から有機ＥＬ素子を取出すことができる。Then, the gate 20 of the working vacuum chamber 11 is opened, the organic EL wafer 4 is held by the supporting portion 6, and the hole injecting and transporting layer is deposited. Next, the robot 2 holds the organic EL wafer 4 on the support portion 6 of the work vacuum chamber 12 and deposits a light emitting layer. In this way, the electron injecting and transporting layer is vapor-deposited in the work vacuum chamber 13,
Then, a cathode is vapor-deposited, a Si layer is sputtered in the work vacuum chamber 15, and a protective film is formed in the work vacuum chamber 16 by sputtering. Then, the vacuum chamber 1 is returned to normal pressure, and the substrate insertion / extraction unit 10 The organic EL element can be taken out from the.
【０００９】[0009]
【実施例】本発明の一実施例を図１、図２及び図４にも
とづき説明する。図１は本発明の一実施例構成図、図２
は本発明の作業用真空室とロボット２の保持部３の要部
説明図、図４は有機ＥＬ素子の構成を示す。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to FIGS. 1, 2 and 4. 1 is a block diagram of an embodiment of the present invention, FIG.
Is an explanatory view of a main part of the working vacuum chamber of the present invention and the holding part 3 of the robot 2, and FIG. 4 shows a structure of the organic EL element.
【００１０】先ず図４により有機ＥＬ素子の製法につい
て説明する。透明電極３１は陽極となるものであって例
えばＩＴＯ等で構成され、ガラス基板３０上に蒸着又は
スパッタリングにより成膜されたあとパターニングされ
て所定の形状に整形されたもの、あるいはマスタパター
ニングされて所定の形状に成膜されたものである。First, a method of manufacturing an organic EL device will be described with reference to FIG. The transparent electrode 31 serves as an anode, and is made of, for example, ITO. The transparent electrode 31 is formed on the glass substrate 30 by vapor deposition or sputtering and then patterned and shaped into a predetermined shape, or master patterned to a predetermined shape. The film is formed in the shape of.
【００１１】正孔注入輸送層３２は、例えば下記化１で
表されるテトラアリールジアミン誘導体が使用される。For the hole injecting and transporting layer 32, for example, a tetraaryldiamine derivative represented by the following chemical formula 1 is used.
【００１２】[0012]
【化１】 Embedded image
【００１３】〔化１において、Ｒ1 、Ｒ2 、Ｒ3 及びＲ
4 はそれぞれアリール基、アルキル基、アルコキシ基、
アリールオキシ基、アミノ基、又はハロゲン原子を表
す。ｒ１、ｒ２、ｒ３及びｒ４は、それぞれ０又は１〜
５の整数である。Ｒ5 及びＲ6は、アルキル基、アルコ
キシ基、アミノ基、又はハロゲン原子を表し、これらは
同一でも異なるものであってもよい。ｒ５及びｒ６は、
それぞれ０又は１〜４の整数である。〕 この化１に限定されず、例えば下記化２で表されるＮ、
Ｎ′−ジ（３−メチルフェニル）−Ｎ、Ｎ′−ジフェニ
ル−４、４′−ジアミノ−１、１′ビフェニルを蒸着す
ることにより形成したものを正孔注入輸送層２２として
使用することもできる。[In Chemical Formula 1, R 1 , R 2 , R 3 and R
4 is an aryl group, an alkyl group, an alkoxy group,
It represents an aryloxy group, an amino group, or a halogen atom. r1, r2, r3 and r4 are each 0 or 1 to
It is an integer of 5. R 5 and R 6 represent an alkyl group, an alkoxy group, an amino group, or a halogen atom, and these may be the same or different. r5 and r6 are
Each is an integer of 0 or 1 to 4. Not limited to this chemical formula 1, for example, N represented by the following chemical formula 2,
The hole injecting and transporting layer 22 may be formed by depositing N'-di (3-methylphenyl) -N, N'-diphenyl-4,4'-diamino-1,1'biphenyl. it can.
【００１４】[0014]
【化２】 Embedded image
【００１５】この外、芳香族三級アミン、ヒドラゾン誘
導体、カルバゾール誘導体、トリアゾール誘導体、イミ
ダゾール誘導体、アミノ基を有するオキサジアゾール誘
導体、ポリチオフェン等が使用できる。In addition to these, aromatic tertiary amines, hydrazone derivatives, carbazole derivatives, triazole derivatives, imidazole derivatives, oxadiazole derivatives having an amino group, polythiophene and the like can be used.
【００１６】発光層３３は、トリス（８−キノリノラ
ト）アルミニウム等の金属錯体色素、テトラフェニルブ
タジェン、アントラセン、ペリレン、コロネン、１２−
フタロペリノン誘導体、キナクリドン、ルブレン、スチ
リル系色素等の有機蛍光体や、前記正孔注入輸送層３２
を構成する例えば化１で表されるテトラアリールジアミ
ン誘導体と、後述する電子注入輸送層３４を構成する例
えばトリス（８−キノリノラト）アルミニウムとの混合
物が使用される。この場合、異なる蒸着源より蒸発させ
る共蒸着が好ましいが、これに限定されるものではな
い。勿論蛍光性物質を含ませることもできる。The light emitting layer 33 includes a metal complex dye such as tris (8-quinolinolato) aluminum, tetraphenyl butadiene, anthracene, perylene, coronene, 12-.
Organic phosphors such as a phthaloperinone derivative, quinacridone, rubrene, and styryl dye, and the hole injecting and transporting layer 32.
A mixture of, for example, the tetraaryldiamine derivative represented by Chemical formula 1 and, for example, tris (8-quinolinolato) aluminum, which constitutes the electron injecting and transporting layer 34 described later, is used. In this case, co-evaporation in which evaporation is performed from different evaporation sources is preferable, but the invention is not limited to this. Of course, a fluorescent substance can be included.
【００１７】電子注入輸送層３４は、例えばトリス（８
−キノリノラト）アルミニウム等の金属錯体色素、オキ
サジアゾール誘導体、ペリレン誘導体、ピリジン誘導
体、ピリミジン誘導体、キノリン誘導体、キノキサリン
誘導体、ジフェニルキノン誘導体、ニトロ置換フルオロ
レン誘導体等を蒸着することにより形成される。The electron injecting and transporting layer 34 is, for example, tris (8
-Quinolinolato) aluminum or the like, a metal complex dye, an oxadiazole derivative, a perylene derivative, a pyridine derivative, a pyrimidine derivative, a quinoline derivative, a quinoxaline derivative, a diphenylquinone derivative, or a nitro-substituted fluorolene derivative.
【００１８】陰極３５は、仕事関数の小さい材料例えば
Ｌｉ、Ｎａ、Ｍｇ、Ａｌ、Ａｇ、Ｉｎあるいはこれらの
１種以上を含む合金例えばＭｇＡｇ（例えば重量比１
０：１）、ＭｇＩｎ等で構成される。陰極３５は蒸着又
はスパッタリングにより成膜される。The cathode 35 is made of a material having a small work function such as Li, Na, Mg, Al, Ag, In or an alloy containing at least one of these materials such as MgAg (for example, a weight ratio of 1).
0: 1), MgIn, or the like. The cathode 35 is formed by vapor deposition or sputtering.
【００１９】Ｓｉ層３６は陰極３５をコーティングして
その酸化を防止するものであり、Ｓｉをスパッタリング
することで成膜される。保護膜３７は陰極３５の酸化防
止のみならず、正孔注入輸送層３２〜電子注入輸送層３
４の酸化を防止し、有機ＥＬ素子が長時間発光できるよ
うにするものであり、例えばＳｉＯ2 、Ｓｉ3 Ｎ4 等を
スパッタリングすることにより形成される。The Si layer 36 coats the cathode 35 to prevent its oxidation, and is formed by sputtering Si. The protective film 37 not only prevents oxidation of the cathode 35 but also the hole injecting and transporting layer 32 to the electron injecting and transporting layer 3
4 is to prevent the organic EL element from emitting light for a long time, and is formed by sputtering SiO 2 , Si 3 N 4 or the like.
【００２０】本発明では、前記正孔注入輸送層３２〜保
護膜３７の形成を図１（Ａ）に示す作業用真空室１１〜
１６で順次行うものである。次に図１（Ａ）に示す本発
明の製造装置について説明する。図１（Ａ）において、
１は真空槽、２はロボット、３は保持部、４は有機ＥＬ
ウェーハ、１０は基板挿入取出部、１１〜１６は作業用
真空室、２０はゲートバルブである。In the present invention, the formation of the hole injecting and transporting layer 32 to the protective film 37 is performed in the working vacuum chamber 11 to 11 shown in FIG.
16 sequentially. Next, the manufacturing apparatus of the present invention shown in FIG. 1 (A) will be described. In FIG. 1 (A),
1 is a vacuum tank, 2 is a robot, 3 is a holder, and 4 is an organic EL
A wafer, 10 is a substrate insertion / extraction unit, 11 to 16 are working vacuum chambers, and 20 is a gate valve.
【００２１】真空槽１は、有機ＥＬ素子をガラス基板３
０に透明電極３１を形成したものから、正孔注入輸送層
３２、発光層３３、電子注入輸送層３４、陰極３５、Ｓ
ｉ層３６、保護膜３７を形成されるまでを連続的に行う
ものであり、内部にロボット２が設置され、また真空槽
１の周壁には作業用真空室１１〜１６が、クラスタ状に
配置されている。また真空槽１には基板挿入取出部１０
が形成されている。The vacuum chamber 1 includes an organic EL element and a glass substrate 3
0 to the transparent electrode 31 formed, the hole injecting and transporting layer 32, the light emitting layer 33, the electron injecting and transporting layer 34, the cathode 35, S
The i layer 36 and the protective film 37 are continuously formed, the robot 2 is installed inside, and the work vacuum chambers 11 to 16 are arranged in a cluster on the peripheral wall of the vacuum chamber 1. Has been done. In addition, the vacuum chamber 1 has a substrate insertion / ejection section 10
Are formed.
【００２２】ロボット２は、有機ＥＬウェーハ４を順次
作業用真空室１１〜１６に挿入し、取出すものであり、
例えば３本のアーム２−１、２−２、２−３を有する。
これらのアーム２−１〜２−３は、そのアーム２−３の
先端に形成された保持部３が上下左右の３６０°の全方
向に移動回転可能に構成されている。The robot 2 sequentially inserts the organic EL wafers 4 into the work vacuum chambers 11 to 16 and takes them out.
For example, it has three arms 2-1, 2-2, 2-3.
These arms 2-1 to 2-3 are configured such that a holding portion 3 formed at the tip of the arm 2-3 can move and rotate in all directions of 360 ° vertically and horizontally.
【００２３】保持部３は、有機ＥＬウェーハ４が保持さ
れた保持板５を載置するものであり、その先端には、後
述する支持基部６の穴部６−１、６−２に進入される突
出部３−１、３−２が形成されている。The holding portion 3 is for holding the holding plate 5 holding the organic EL wafer 4, and the tip thereof is inserted into holes 6-1 and 6-2 of the support base 6 which will be described later. Projecting parts 3-1 and 3-2 are formed.
【００２４】有機ＥＬウェーハ４は、有機ＥＬ素子が製
造されるまでの中間体であり、図１（Ａ）に示す有機Ｅ
Ｌウェーハ４はガラス基板３０に透明電極３１がパター
ニング形成されたものであり、その後順次作業用真空室
１１〜１６で順次成膜されて、有機ＥＬ素子になるまで
の途中のものをいう。The organic EL wafer 4 is an intermediate product until an organic EL element is manufactured. The organic EL wafer 4 shown in FIG.
The L wafer 4 is formed by patterning the transparent electrode 31 on the glass substrate 30, and then is formed in the working vacuum chambers 11 to 16 one by one until it becomes an organic EL element.
【００２５】作業用真空室１１は、例えば正孔注入輸送
層３２を蒸着する、蒸着工程用の真空室であり、図１
（Ｂ）はそのＡ−Ａ線断面図である。この断面図に示さ
れるように作業用真空室１１には支持基部６、加熱部
７、蒸着源１７が具備されている。作業用真空室１１で
は正孔注入輸送層３２が蒸着されるので、この室の蒸着
源１７には前記化１あるいは化２で示されるものが使用
される。The working vacuum chamber 11 is, for example, a vacuum chamber for a vapor deposition process in which the hole injecting and transporting layer 32 is vapor-deposited.
(B) is the sectional view on the AA line. As shown in this sectional view, the working vacuum chamber 11 is provided with a support base 6, a heating unit 7, and a vapor deposition source 17. Since the hole injecting and transporting layer 32 is vapor-deposited in the working vacuum chamber 11, the vapor deposition source 17 in this chamber is the one shown in Chemical formula 1 or Chemical formula 2 above.
【００２６】支持基部６は、有機ＥＬウェーハ４が保持
された保持板５が載置されるものであり、図２に示す如
く、穴部６−１、６−２が形成されている。図２の状態
において、ロボット２の先端部３が右方向に移動し、そ
の突出部３−１、３−２が穴部６−１、６−２に進入す
る。このとき、突出部３−１、３−２の上面が支持基部
６の上面よりもわずかに高い状態で進入するので、保持
板５はそのまま支持基部６上を移動する。そして所定の
位置に進入したとき、先端部３が下降するので、保持板
５は支持基部６上の所定の位置に載置される。The support base 6 is one on which the holding plate 5 holding the organic EL wafer 4 is placed, and as shown in FIG. 2, holes 6-1 and 6-2 are formed. In the state of FIG. 2, the tip 3 of the robot 2 moves to the right, and the protrusions 3-1 and 3-2 thereof enter the holes 6-1 and 6-2. At this time, since the upper surfaces of the protrusions 3-1 and 3-2 enter slightly higher than the upper surface of the support base 6, the holding plate 5 moves on the support base 6 as it is. Then, when entering the predetermined position, the tip 3 is lowered, so that the holding plate 5 is placed at the predetermined position on the support base 6.
【００２７】この状態で、ゲートバルブ１６を閉じ、加
熱部７に通電すれば、蒸着源１７が有機ＥＬウェーハ４
上に蒸着される。そして蒸着終了後、再びゲートバルブ
２０を開き、ロボット２の先端部３の上面が支持基部６
の上面よりも低い状態で突出部３−１、３−２が穴部６
−１、６−２に進入させ、所定の位置に進入したとき、
先端部３を若干上昇させる。これにより蒸着処理された
有機ＥＬウェーハ４が先端部３に再び載置される。これ
を作業用真空室１１の外に移動し、次の作業用真空室１
２内の支持基部６上に同様に載置する。このようにして
順次作業用真空室における成膜処理を行うことができ
る。なお図２に示す如く、マスク９を設け、マスク蒸着
することもできる。In this state, when the gate valve 16 is closed and the heating part 7 is energized, the vapor deposition source 17 is set to the organic EL wafer 4
Deposited on top. After the vapor deposition is completed, the gate valve 20 is opened again, and the upper surface of the tip end portion 3 of the robot 2 is supported by the support base portion 6.
The protruding portions 3-1 and 3-2 are lower than the upper surface of the hole 6
-1, 6-2, when entering a predetermined position,
The tip 3 is slightly raised. As a result, the vapor-deposited organic EL wafer 4 is placed on the tip portion 3 again. This is moved to the outside of the work vacuum chamber 11, and the next work vacuum chamber 1
It is similarly placed on the support base 6 in 2. Thus, the film forming process in the working vacuum chamber can be sequentially performed. As shown in FIG. 2, a mask 9 may be provided and mask vapor deposition may be performed.
【００２８】作業用真空室１２は発光層３３を蒸着する
ものであり、作業用真空室１３は電子注入輸送層３４を
蒸着するものであり、作業用真空室１４は陰極２５を蒸
着するものあるので、これらの各室は、前記作業用真空
室１１と同様に構成されている。The working vacuum chamber 12 is for depositing the light emitting layer 33, the working vacuum chamber 13 is for depositing the electron injecting and transporting layer 34, and the working vacuum chamber 14 is for depositing the cathode 25. Therefore, each of these chambers is configured similarly to the working vacuum chamber 11.
【００２９】作業用真空室１５は例えばＳｉ層３６をス
パッタリングにより形成するスパッタリング工程用の真
空室であり、図１（Ｃ）はそのＢ−Ｂ断面図である。こ
の断面図に示されるように、スパッタリング用の作業用
真空室１５でも、蒸着用の作業用真空室と同様に支持基
部６が設けられている。そしてその上方に電極１８が設
置され、その前面にターゲット１９が配置されている。
電極１８には高周波源８により高周波電圧が印加され、
室内に発生した高周波放電によりターゲットがスパッタ
リングされ、支持基部６上に載置された有機ＥＬウェー
ハ４上にＳｉ層３６が形成される。このとき室内にＡｒ
ガスが導入されスパッタを行う。The working vacuum chamber 15 is a vacuum chamber for a sputtering process for forming the Si layer 36 by sputtering, for example, and FIG. 1C is a sectional view taken along the line BB. As shown in this cross-sectional view, the work vacuum chamber 15 for sputtering is also provided with the support base 6 similarly to the work vacuum chamber for vapor deposition. Then, the electrode 18 is installed above it, and the target 19 is arranged on the front surface thereof.
A high frequency voltage is applied to the electrode 18 by a high frequency source 8,
The target is sputtered by the high frequency discharge generated in the chamber, and the Si layer 36 is formed on the organic EL wafer 4 mounted on the support base 6. At this time Ar in the room
Gas is introduced to perform sputtering.
【００３０】作業用真空室１６は、例えば保護膜３７を
スパッタリングにより形成するスパッタリング工程用の
真空室であり、前記作業用真空室１５と同様に構成され
ている。The working vacuum chamber 16 is a vacuum chamber for a sputtering process in which the protective film 37 is formed by sputtering, for example, and has the same structure as the working vacuum chamber 15.
【００３１】なお、前記作業用真空室１１〜１４及び作
業用真空室１５、１６は、真空槽１の周辺に設置され、
これらはいわゆるクラスター状に設置されている。最初
にガラス基板３０に透明電極２１を形成した有機ＥＬウ
ェーハ４を保持板５に保持させ、これを基板挿入取出部
１０の窓部より入れてロボット２の先端部３上に載置す
る。それから各作業用真空室１１〜１６のゲートバルブ
２０を開き、真空槽１を図示省略した真空ポンプにて排
気する。The work vacuum chambers 11 to 14 and the work vacuum chambers 15 and 16 are installed around the vacuum chamber 1,
These are installed in what is called a cluster. First, the organic EL wafer 4 having the transparent electrode 21 formed on the glass substrate 30 is held by the holding plate 5, which is inserted through the window portion of the substrate insertion / extraction portion 10 and placed on the tip portion 3 of the robot 2. Then, the gate valve 20 of each of the working vacuum chambers 11 to 16 is opened, and the vacuum chamber 1 is evacuated by a vacuum pump (not shown).
【００３２】そして所定の気圧に減圧されたとき、ロボ
ット２の先端部３を作業用真空室１１に挿入し、その支
持基部６上に有機ＥＬウェーハ４を保持した保持板５を
前記の如く載置したあと、そのゲートバルブ１６を閉め
る。そして加熱部７を加熱し、蒸着源１７から正孔注入
輸送層３２を蒸着させる。When the pressure is reduced to a predetermined atmospheric pressure, the tip 3 of the robot 2 is inserted into the work vacuum chamber 11, and the holding plate 5 holding the organic EL wafer 4 is mounted on the support base 6 thereof as described above. After that, the gate valve 16 is closed. Then, the heating unit 7 is heated to deposit the hole injecting and transporting layer 32 from the vapor deposition source 17.
【００３３】このようにして正孔注入輸送層３２が形成
された後、作業用真空室１１では、ゲートバルブ２０を
開き、ロボット２の先端部３を駆動して、それに正孔注
入輸送層３２が形成された有機ＥＬウェーハ４が保持さ
れている保持板５を、次に作業用真空室１２内の支持基
部６上に載置し、そのゲートバルブ２０を閉める。そし
て加熱部７を加熱し、蒸着源１７から発光層３３を蒸着
させる。After the hole injecting and transporting layer 32 is formed in this way, in the working vacuum chamber 11, the gate valve 20 is opened, and the tip portion 3 of the robot 2 is driven to form the hole injecting and transporting layer 32 therein. Then, the holding plate 5 holding the organic EL wafer 4 on which is formed is placed on the support base 6 in the working vacuum chamber 12, and the gate valve 20 is closed. Then, the heating unit 7 is heated, and the light emitting layer 33 is vapor-deposited from the vapor deposition source 17.
【００３４】発光層３３が形成された後、作業用真空室
１２ではゲートバルブ２０を開き、ロボット２の先端部
３を駆動して、それに発光層３３が形成された有機ＥＬ
ウェーハ４が保持されている保持板５を、次の作業用真
空室１３内の支持基部６上に載置し、そのゲートバルブ
２０を閉める。そして加熱部７を加熱し、蒸着源１７か
ら電子注入輸送層３４を蒸着させる。After the light emitting layer 33 is formed, the gate valve 20 is opened in the working vacuum chamber 12 and the tip portion 3 of the robot 2 is driven to form the organic EL on which the light emitting layer 33 is formed.
The holding plate 5 holding the wafer 4 is placed on the support base 6 in the next work vacuum chamber 13, and the gate valve 20 is closed. Then, the heating unit 7 is heated, and the electron injection transport layer 34 is vapor-deposited from the vapor deposition source 17.
【００３５】このように電子注入輸送層３４が形成され
た後、作業用真空室１３ではゲートバルブ２０を開き、
ロボット２の先端部３を駆動して、それに電子注入輸送
層２４が形成された有機ＥＬウェーハ４が保持されてい
る保持板５を、次の作業用真空室１４内の支持基部６上
に載置し、そのゲートバルブ２０を閉める。そして加熱
部７を加熱し、蒸着源１７から陰極３５を蒸着させる。After the electron injecting and transporting layer 34 is thus formed, the gate valve 20 is opened in the working vacuum chamber 13,
The holding plate 5 holding the organic EL wafer 4 having the electron injecting and transporting layer 24 formed thereon is driven on the support base 6 in the next working vacuum chamber 14 by driving the tip 3 of the robot 2. Then, the gate valve 20 is closed. Then, the heating unit 7 is heated and the cathode 35 is vapor-deposited from the vapor deposition source 17.
【００３６】陰極３５が形成された後、作業用真空室１
４ではゲートバルブ２０を開き、ロボット２の先端部３
を駆動して、それに陰極３５が形成された有機ＥＬウェ
ーハ４が保持されている保持板５を、次の作業用真空室
１５内の支持基部６上に載置し、そのゲートバルブ２０
を閉める。そして電極１８に高周波源８より高周波を印
加し、高周波放電を発生させ、ターゲット１９をスパッ
タして有機ＥＬウェーハ４上にＳｉ層３６が形成され
る。After the cathode 35 is formed, the working vacuum chamber 1
At 4, the gate valve 20 is opened and the tip portion 3 of the robot 2 is opened.
The holding plate 5 holding the organic EL wafer 4 on which the cathode 35 is formed is placed on the support base 6 in the next working vacuum chamber 15, and the gate valve 20
Close. Then, a high frequency is applied to the electrode 18 from the high frequency source 8 to generate a high frequency discharge, and the target 19 is sputtered to form the Si layer 36 on the organic EL wafer 4.
【００３７】Ｓｉ層３６が形成された後、作業用真空室
１５ではゲートバルブ２０を開き、ロボット２の先端部
３を駆動して、それにＳｉ層３６が形成された有機ＥＬ
ウェーハ４が保持されている保持板５を、次の作業用真
空室１６内の支持基部６上に載置し、そのゲートバルブ
２０を閉める。そして電極１８に高周波源８より高周波
を印加し、高周波放電を発生させ、ターゲット１９をス
パッタして有機ＥＬウェーハ４上に保護膜３７を形成す
る。After the Si layer 36 is formed, the gate valve 20 is opened in the work vacuum chamber 15 to drive the tip portion 3 of the robot 2 so that the Si EL layer 36 is formed thereon.
The holding plate 5 holding the wafer 4 is placed on the support base 6 in the next working vacuum chamber 16, and the gate valve 20 is closed. Then, a high frequency is applied to the electrode 18 from the high frequency source 8 to generate a high frequency discharge, and the target 19 is sputtered to form the protective film 37 on the organic EL wafer 4.
【００３８】このように保護膜３７が形成された後、作
業用真空室１６ではゲートバルブ２０を開き、ロボット
２の先端部３を駆動して、それに保護膜３７が形成され
た有機ＥＬ素子を保持されている保持板５を基板挿入取
出部１０に駆動させる。そして真空槽１内を常圧に戻
し、図示省略した窓部を開いて有機ＥＬ素子を取出す。After the protective film 37 is thus formed, the gate valve 20 is opened in the working vacuum chamber 16 and the tip portion 3 of the robot 2 is driven to move the organic EL element having the protective film 37 formed thereon. The holding plate 5 held is driven by the board insertion / extraction unit 10. Then, the inside of the vacuum chamber 1 is returned to normal pressure, a window (not shown) is opened, and the organic EL element is taken out.
【００３９】なお、前記説明では、支持基部６を各作業
用真空室の下に位置した例について説明したが、本発明
はこれに限定されるものではなく、図３（Ａ）に蒸着用
の作業用真空室１１′として代表的に示す如く、蒸着用
の加熱部７、蒸着源１７を下方におき、支持基部６を上
方においてもよい。同様に図３（Ｂ）に示す如く、スパ
ッタリング用の作業用真空室１５′としては、電極１８
やターゲット１９を下方におき支持基部６を上方におい
てもよい。In the above description, an example in which the support base 6 is located under each working vacuum chamber has been described, but the present invention is not limited to this, and FIG. As typically shown as the working vacuum chamber 11 ', the heating unit 7 for vapor deposition and the vapor deposition source 17 may be placed below and the support base 6 may be placed above. Similarly, as shown in FIG. 3B, the electrode 18 is used as the working vacuum chamber 15 'for sputtering.
Alternatively, the target 19 may be placed below and the support base 6 may be placed above.
【００４０】このとき、当然のことながら有機ＥＬウェ
ーハ４は蒸着源１７あるいはターゲット１９側に面して
いる。そして支持基部６には、この有機ＥＬウェーハ４
の載置部分の下方に穴部が形成されている。At this time, as a matter of course, the organic EL wafer 4 faces the vapor deposition source 17 or the target 19 side. The organic EL wafer 4 is attached to the support base 6.
A hole is formed below the mounting portion of.
【００４１】前記実施例では、有機ＥＬ素子として正孔
注入輸送層、発光層、電子注入輸送層の３層構成の有機
ＥＬ素子例について説明したが本発明は勿論これに限定
されるものではない。例えば正孔注入輸送層・発光層＋
電子注入輸送層、正孔注入輸送層＋電子注入輸送層・発
光層の如きものに対しても同様に適用できる。また１つ
の電子注入層が発光層及び正孔注入層を兼ねる場合も本
発明に含まれるものである。In the above embodiment, an example of an organic EL element having a three-layer structure of a hole injecting / transporting layer, a light emitting layer and an electron injecting / transporting layer was described as an organic EL element, but the present invention is not limited to this. . For example, hole injection transport layer / light emitting layer +
The same applies to the electron injecting / transporting layer, the hole injecting / transporting layer + the electron injecting / transporting layer, and the light emitting layer. In addition, the case where one electron injection layer also serves as the light emitting layer and the hole injection layer is also included in the present invention.
【００４２】また作業用真空室の配置は、その作業順に
従って左廻りに配置した例について説明したが、作業用
真空室の配置は作業順に限定されるものではなく、任意
に配置できる。この場合、ロボット２の有機ＥＬウェー
ハの駆動先が作業順に従って行われることになる。勿論
作業順は右廻りでもよい。The arrangement of the work vacuum chambers has been described in the counterclockwise arrangement according to the work order. However, the work vacuum chambers are not limited to the work order and may be arranged arbitrarily. In this case, the driving destination of the organic EL wafer of the robot 2 is performed according to the work order. Of course, the work order may be clockwise.
【００４３】作業用真空室の数も、図１（Ａ）に示すも
のに限定されるものではなく、例えば層数の増加などに
より工程数が増加すればこれに応じて増加することがで
きる。The number of working vacuum chambers is not limited to that shown in FIG. 1A, and can be increased in accordance with the increase in the number of steps, for example, by increasing the number of layers.
【００４４】前記説明では陰極上にＳｉ膜を成膜したも
のに対してその上に保護膜を形成する場合について説明
したが本発明はこれに限定されるものではなく、他のも
のについても勿論適用できる。In the above description, the case where the Si film is formed on the cathode and the protective film is formed on the Si film is explained. However, the present invention is not limited to this, and other ones may be used. Applicable.
【００４５】[0045]
【発明の効果】請求項１に記載された本発明によれば、
真空を破らない、いわゆるクラスタツール方式で有機Ｅ
Ｌ素子を製造するので、一度真空にすれば工程が終わる
までこれを保持すればよく、工程毎に真空状態にする必
要がないので効率的である。しかも保護膜を形成したあ
とで大気中に取出すので、各層が酸化雰囲気に露出され
ることがないので、各層が酸化されないため、発光寿命
の長いものを提供することができる。According to the present invention described in claim 1,
Organic E by the so-called cluster tool method that does not break the vacuum
Since the L element is manufactured, it is efficient because once it is evacuated, it can be held until the process is completed, and it is not necessary to make a vacuum state for each process. In addition, since the protective film is formed and then taken out into the air, each layer is not exposed to the oxidizing atmosphere, and therefore each layer is not oxidized, so that the one having a long emission life can be provided.
【００４６】請求項２に記載された本発明によれば各作
業用真空室は個別の膜を形成するので、高価な有機ＥＬ
材料を作業用真空室より回収して再利用することができ
る。請求項３に記載された本発明によれば各作業用真空
室に自動的に有機ＥＬウェーハを搬送して成膜し、極め
て効率良く有機ＥＬ素子を製造することができる。According to the present invention described in claim 2, since each working vacuum chamber forms an individual film, an expensive organic EL device is used.
The material can be recovered from the working vacuum chamber and reused. According to the present invention described in claim 3, the organic EL wafer can be automatically conveyed to each work vacuum chamber to form a film, and the organic EL element can be manufactured extremely efficiently.
【図１】本発明の一実施例構成図である。FIG. 1 is a configuration diagram of an embodiment of the present invention.
【図２】作業用真空室の要部説明図である。FIG. 2 is an explanatory view of a main part of a work vacuum chamber.
【図３】本発明の他の実施例である。FIG. 3 is another embodiment of the present invention.
【図４】有機ＥＬ素子の１例である。FIG. 4 is an example of an organic EL element.
１ 真空槽 ２ ロボット ３ 先端部 ４ 有機ＥＬウェーハ ５ 保持板 ６ 支持基部 ７ 加熱部 ８ 高周波源 ９ マスク １０ 基板挿入取出部 １１〜１６ 作業用真空室 １７ 蒸着源 １８ 電極 １９ ターゲット ２０ ゲートバルブ DESCRIPTION OF SYMBOLS 1 Vacuum tank 2 Robot 3 Tip part 4 Organic EL wafer 5 Holding plate 6 Support base 7 Heating part 8 High frequency source 9 Mask 10 Substrate insertion / extraction part 11-16 Work vacuum chamber 17 Vapor deposition source 18 Electrode 19 Target 20 Gate valve
Claims (3)
くとも一部の複数の層状部分を、真空槽の周辺に形成さ
れた複数の作業用真空室において順次成膜し、保護膜の
形成後に外部に取出すようにしたことを特徴とする有機
エレクトロルミネセンス素子の製造方法。1. A plurality of layered portions of at least a part of an organic electroluminescence element are sequentially formed in a plurality of work vacuum chambers formed around a vacuum chamber, and taken out to the outside after forming a protective film. A method for manufacturing an organic electroluminescence device, characterized in that
と、この真空槽の周囲に、有機エレクトロルミネセンス
素子を構成する層状部分を形成する複数の作業用真空室
を設け、 前記作業用真空室において有機エレクトロルミネセンス
素子の一層を形成したことを特徴とする有機エレクトロ
ルミネセンス素子の製造装置。2. A vacuum chamber having a holding and conveying means therein, and a plurality of working vacuum chambers for forming a layered portion constituting an organic electroluminescence device are provided around the vacuum chamber, and the working vacuum is provided. An apparatus for manufacturing an organic electroluminescence device, characterized in that one layer of the organic electroluminescence device is formed in a room.
真空室内に自由に移動できる可動アームを設けたことを
特徴とする請求項２記載の有機エレクトロルミネセンス
素子の製造装置。3. The apparatus for manufacturing an organic electroluminescence device according to claim 2, wherein a movable arm whose tip portion is freely movable in each working vacuum chamber is provided in the vacuum chamber.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6244244A JPH08111285A (en) | 1994-10-07 | 1994-10-07 | Manufacture of organic electroluminescent element and its device |
| JP2000096768A JP3520024B2 (en) | 1994-10-07 | 2000-03-31 | Method and apparatus for manufacturing organic electroluminescent element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6244244A JPH08111285A (en) | 1994-10-07 | 1994-10-07 | Manufacture of organic electroluminescent element and its device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000096768A Division JP3520024B2 (en) | 1994-10-07 | 2000-03-31 | Method and apparatus for manufacturing organic electroluminescent element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08111285A true JPH08111285A (en) | 1996-04-30 |
Family
ID=17115883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6244244A Pending JPH08111285A (en) | 1994-10-07 | 1994-10-07 | Manufacture of organic electroluminescent element and its device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08111285A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10214682A (en) * | 1997-01-30 | 1998-08-11 | Mitsubishi Chem Corp | Manufacturing device and manufacture of organic electroluminescent element |
| JPH10241858A (en) * | 1997-02-25 | 1998-09-11 | Tdk Corp | Manufacture of organic electroluminescent display device and device therefor |
| US6049167A (en) * | 1997-02-17 | 2000-04-11 | Tdk Corporation | Organic electroluminescent display device, and method and system for making the same |
| EP0998170A3 (en) * | 1998-10-28 | 2001-10-31 | TDK Corporation | System and process for fabricating an organic electro-luminescent display device |
| US6359606B1 (en) | 1997-08-29 | 2002-03-19 | Seiko Epson Corporation | Active matrix display |
| JP2002158090A (en) * | 2000-09-08 | 2002-05-31 | Semiconductor Energy Lab Co Ltd | Light-emitting device, its production method and thin film forming device |
| WO2002052903A1 (en) * | 2000-12-22 | 2002-07-04 | Nippon Steel Chemical Co., Ltd. | Production method and device for organic el element |
| JP2002532849A (en) * | 1998-12-17 | 2002-10-02 | ケンブリッジ ディスプレイ テクノロジー リミテッド | Manufacturing method of organic light emitting device |
| WO2003041453A1 (en) * | 2001-11-05 | 2003-05-15 | Neoview Co., Ltd. | Inorganic material evaporation apparatus |
| JP2003234185A (en) * | 2001-12-27 | 2003-08-22 | Eastman Kodak Co | Manufacturing method of organic light emitting diode device |
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1994
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