JP2013001920A - Sputtering apparatus, film-forming apparatus using the same and film-forming method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a sputtering apparatus that can cope with increase in substrate size, is capable of conveying a substrate horizontally, can hold the substrate in a substantially vertical position when forming a film, realizes highly uniform film thickness, enables use of a low-cost target or power source, and can be suitably clustered with a vapor deposition apparatus.SOLUTION: The sputtering apparatus has a processing vacuum chamber (10), in which a cathode electrode (60) is provided inside the processing vacuum chamber, a sputtering target material (61) is provided on the cathode electrode. The substrate is conveyed through the processing vacuum chamber with its deposition surface facing upward. The cathode electrode has a rectangular shape. By holding the substrate in a vertical position and moving the cathode electrode in parallel to the substrate surface, the sputtering target material is deposited on the substrate.

Description

  The present invention relates to a sputtering apparatus, a film forming apparatus using the sputtering apparatus, and a film forming method thereof.

  In recent years, organic devices have attracted attention as a new industrial field. For example, organic EL has been developed as a display device or lighting device, an organic transistor as a driving element such as organic EL, electronic paper, or RFID, and an organic thin film solar cell as a solar cell. In particular, organic EL devices are required to increase the size of the production substrate along with the increase in size of display devices and lighting devices. Will expand to 5.5th to 6th generation (substrate dimensions are 1300mm x 1500mm to 1500mm x 1800mm), which will be more than 2.9 times, and further to the 8th generation line (glass substrate dimensions: 2200mm x 2500mm) Expectation.

  As a substrate transport method in a vacuum deposition method generally used for organic EL film formation, there is a bottom surface transport that transports with a deposition surface facing down in order to perform deposition from below. In the lower surface conveyance, the lower surface is a vapor deposition surface, and the vapor deposition surface cannot be held, and it is necessary to convey a frame portion that is not used as a display surface. Or, along with the increase in the size of the substrate, vertical transport has also been proposed in which the substrate is transported vertically in a tray. Known examples include Patent Document 1 and Patent Document 2.

  However, in the lower surface conveyance, since the conveyance of holding only the frame portion is carried, the deflection becomes larger as the substrate becomes larger. When the wrinkles are large, there is only a holding force for the frame portion, so a special holding mechanism is required. In addition, if the holding force is insufficient, the risk of falling increases. Further, the problem of wrinkles affects not only the conveyance but also the wrinkles of the shadow mask during the lower surface vapor deposition, and there is a problem that high-definition vapor deposition cannot be performed due to the influence of both.

  On the other hand, in the vertical conveyance, the problem of wrinkles can be solved, but there is a problem that a conveyance tray is necessary, the size of the tray is large, dust generation at the time of conveyance by the tray, and a tray collection / cleaning mechanism are necessary.

  In order to solve these problems, a cluster type in which a substrate is transported to the top by a transport robot, the substrate is delivered in a vacuum chamber, and then the substrate is placed substantially vertically and a line-shaped deposition source is moved up and down to perform deposition. An organic EL manufacturing apparatus has been proposed. Thereby, the subject of using the board of a board and a tray can be solved. As a known example, Patent Document 3 is cited.

  Increasing the size of display devices and lighting devices in addition to the above-mentioned transport problems has created new demands for lowering the resistance of the upper electrode of the organic EL. Particularly when manufacturing large televisions and lighting, it is necessary to form a low-cost, high-reflectance Al electrode in the bottom emission structure, and to form a transparent electrode such as ITO or IZO to a thickness of about several hundreds of nanometers in the top emission method. is there.

Conventionally, Al electrodes have been formed by resistance heating vapor deposition using a crucible, induction heating vapor deposition, or EB vapor deposition. Moreover, since the substrate size was small, the film thickness uniformity was ensured by providing a sufficient distance between the vapor deposition source and the substrate. However, it is difficult to hold the Al melt in the crucible in the film formation method with the upper surface conveyance and the substrate standing substantially vertically, and special measures such as holding the crucible obliquely are required. In addition, Al melt has high reactivity and wettability, and is likely to leak due to wetting from the crucible. Further, since the vapor pressure is low, a high deposition temperature is required. Due to such problems, it is very difficult to form a thick Al film.
Therefore, it is desirable to deposit thick Al with a sputtering film on a thin buffer layer formed by vapor deposition. The reason why the buffer layer is used without using the sputtering film alone is to prevent the organic layer from being damaged by the high energy particles generated by sputtering.

  On the other hand, ITO and IZO are generally difficult to form by vapor deposition alone, and are usually formed by sputtering on a buffer layer formed by vapor deposition.

  In a sputtering apparatus, a film forming method in which the upper surface is transferred and a substrate is set up substantially vertically in a liquid crystal manufacturing apparatus or the like is common. However, as the substrate size increases, the DC discharge method has a problem of increasing the film thickness distribution. A new film forming method such as an AC discharge method has been proposed (Patent Document 4).

JP 2006-147488 A JP 2004-259638 A JP 2010-62043 A JP 2005-290550 A

The AC discharge method is a method in which a plurality of targets are arranged adjacent to each other, and two adjacent targets are paired to alternately set a cathode potential and an anode potential to perform sputtering alternately. Since the anode potential can be secured at a position adjacent to the target even when the substrate is enlarged, a relatively uniform discharge distribution can be obtained, and the film thickness distribution is improved.
However, since no discharge occurs between the target pair, a periodic film thickness distribution is generated in principle for each target pair. In addition, since a plurality of cathode electrodes are required because a plurality of targets are used, and an AC power supply is required for each target pair, the target cost, power supply, and apparatus cost increase compared to DC discharge or RF discharge using a single target. There are challenges.

  The first aspect of the present invention is to improve the film thickness distribution by a simple method and to reduce the running cost of the apparatus and the target in the cluster type sputtering apparatus in which the upper surface conveyance and the substrate are set substantially vertically. A target sputtering device that can be connected with good consistency with a cluster-type vapor deposition device that transports the upper surface and deposits the substrate vertically with a linear vapor deposition source is provided on the thin buffer layer of the vapor deposition film. It is a second object of the present invention to provide a method for realizing an organic device manufacturing apparatus capable of preventing damage to the organic layer and forming a low-resistance upper electrode film by forming a thick sputtering film.

The features of the present invention for solving the above-described problems are as follows.
(1) A sputtering apparatus having a processing vacuum chamber, wherein a cathode electrode is provided in the processing vacuum chamber, a sputtering target material is provided on the cathode electrode, a substrate is transported into the processing vacuum chamber, and the cathode electrode A sputtering apparatus in which a sputtering target material is formed on a substrate by scanning the cathode electrode in parallel with the substrate surface in a rectangular shape with the substrate standing in a vertical direction.
(2) In the above (1), a sputtering apparatus in which the longitudinal direction of the cathode electrode is arranged in the vertical direction of the processing vacuum chamber, and the cathode electrode is scanned in the horizontal direction, whereby the sputtering target material is deposited on the substrate.
(3) In the above (1), a sputtering apparatus in which the longitudinal direction of the cathode electrode is arranged in the horizontal direction of the processing vacuum chamber, and the cathode electrode is scanned in the vertical direction, whereby the sputtering target material is deposited on the substrate.
(4) The sputtering apparatus according to any one of (1) to (3), wherein the cathode electrode is a parallel plate method.
(5) The sputtering apparatus according to any one of (1) to (4), wherein the cathode electrode is connected to a DC power source or an RF power source.
(6) The sputtering apparatus according to any one of (1) to (5), wherein the size of the substrate is 1300 mm × 1500 mm or more.
(7) In any one of the above (1) to (6), the sputtering apparatus has a patterning metal, the patterning metal patterns a sputtering target material formed on a substrate, Sputtering device connected to the same potential as the processing vacuum chamber.
(8) In the above (7), two substrates are provided in the processing vacuum chamber, and one of the two substrates is aligned with the patterning metal. A sputtering apparatus in which the other substrate is set up vertically and a sputtering target material is deposited on the other substrate.
(9) In the above (8), the cathode electrodes arranged in the vertical direction of the processing vacuum chamber are scanned in the horizontal direction alternately in front of the two substrates, so that the sputtering target material is applied to the two substrates. Sputtering apparatus for film formation.
(10) In the above (8), the sputtering target material is deposited on two substrates by scanning the cathode electrode, whose longitudinal direction is the horizontal direction of the processing vacuum chamber, in the vertical direction. Sputtering equipment.
(11) The sputtering apparatus according to any one of (1) to (10) above, a deposition apparatus in which the cathode electrode of the sputtering apparatus is replaced with a linear deposition source, a transfer chamber connecting the sputtering apparatus and the deposition apparatus, and a sputtering apparatus A transfer robot that carries in and out the substrate in the vapor deposition apparatus and the substrate in the vapor deposition apparatus, and the conveyance robot carries out the substrate on which the vapor deposition material is formed by the line vapor deposition source in the vapor deposition apparatus from the vapor deposition apparatus, A deposition apparatus in which a sputtering target material is deposited on a substrate on which a deposition material is deposited in a sputtering apparatus.
(12) In the above (11), the vapor deposition material and the sputtering target material formed on the substrate in the sputtering apparatus are film forming apparatuses that serve as the upper electrode of the organic EL.
(13) The film forming apparatus in which the deposition material and the sputtering target material are Al in (11) or (12) above.
(14) A method of forming a film in a sputtering apparatus having a processing vacuum chamber, wherein a cathode electrode is provided in the processing vacuum chamber, a sputtering target material is provided on the cathode electrode, and a substrate is transferred to the upper surface in the processing vacuum chamber. The film forming method of the sputtering apparatus, wherein the cathode electrode is rectangular, the cathode electrode is scanned in parallel with the substrate surface in a state where the substrate is set up vertically, and the sputtering target material is formed on the substrate.
(15) A film forming method for a film forming apparatus using the sputtering apparatus of (14) above, wherein a vapor deposition apparatus in which the cathode electrode of the sputtering apparatus is replaced with a line-shaped vapor deposition source, and a transport for connecting the sputtering apparatus and the vapor deposition apparatus. A chamber, and a transfer robot that carries in and out the substrate in the sputtering apparatus and the substrate in the vapor deposition apparatus, and the transfer robot has a substrate on which the vapor deposition material is formed by a line vapor deposition source in the vapor deposition apparatus. A film forming method of a film forming apparatus in which a sputtering target material is formed on a substrate on which a vapor deposition source is formed in the sputtering apparatus.

  According to the present invention, it is possible to realize a sputtering apparatus having a good film thickness distribution even when the substrate is enlarged, in a sputtering apparatus that deposits a film with the upper surface transported and the substrate standing vertically. Problems, configurations, and effects other than those described above will be clarified by the following description of embodiments.

It is the schematic which shows the sputtering device of one Example typically. It is the schematic of the cathode electrode of the sputtering device of one Example. It is the schematic which shows the sputtering device of one Example typically. It is the schematic which shows typically the vapor deposition apparatus of one Example. It is a schematic diagram of the organic device manufacturing apparatus which clustered and connected the sputtering apparatus and vapor deposition apparatus of one Example.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. The following description shows specific examples of the contents of the present invention, and the present invention is not limited to these descriptions. Various modifications by those skilled in the art are within the scope of the technical idea disclosed in this specification. Changes and modifications are possible. In all the drawings for explaining the present invention, components having the same function are denoted by the same reference numerals, and repeated description thereof may be omitted.

<First Embodiment of Sputtering Apparatus>
FIG. 1 is a schematic view schematically showing the structure of a sputtering apparatus according to an embodiment of the present invention. As shown in FIG. 1, the horizontal direction of the processing vacuum chamber 10 and the vertical direction of the processing vacuum chamber 10 are defined. The sputtering apparatus in FIG. 1 generally includes a gate valve 20, a substrate transfer unit 30, and a drive unit 40 for standing the substrate substantially vertically to maintain a vacuum between the processing vacuum chamber 10 and a transfer chamber (not shown). , A patterning metal 50, a cathode electrode 60, and a sputtering target material (not shown) placed on the cathode electrode 60. The cathode electrode 60 is opposed to a substantially upright substrate, and the longitudinal direction of the cathode electrode 60 is arranged in the vertical direction in the processing vacuum chamber 10. The cathode electrode 60 is a parallel plate system that can be scanned to the left and right in a substantially rectangular shape that is longer than the side in the height direction of the substrate, and shorter than the other side that is substantially perpendicular to the side in the height direction of the substrate. is there. By making the short side of the cathode electrode 60 shorter than the substrate length in the scanning direction, the entire cathode electrode 60 can scan the entire surface of the substrate. At this time, high film thickness uniformity can be obtained by keeping the scanning speed constant. Also in the longitudinal direction of the cathode electrode 60, a high film can be obtained by uniformly arranging the permanent magnets 63 (FIG. 2) on the back surface of the cathode electrode and, if necessary, attaching a correction plate to the shield electrode 62 (FIG. 2) in front of the cathode electrode 60. Thickness uniformity can be obtained. In addition to the parallel plate method using a rectangular cathode as the cathode electrode 60, a rotary method using a cylindrical cathode may be used. The parallel plate method is desirable in consideration of lowering the target cost, increasing the deposition rate, and forming the electrode thicker. The cathode electrode 60 may have any shape as long as the region facing the substrate is at least a rectangle or a cylinder, and does not need to be a strict rectangle or cylinder including an end face. The end of the cathode electrode 60 may be curved or may have a tapered shape. The cross-sectional shape of the cathode electrode 60 may be rectangular or trapezoidal. In FIG. 1, the scanning direction of the cathode electrode 60 is uniaxial (only the reciprocating motion in the horizontal direction), so that the driving mechanism of the cathode electrode 60 is simplified.

  First, the gate valve 20 is opened, and the substrate is transferred into the substrate transfer unit 30 by upper surface transfer by a transfer robot in a transfer chamber (not shown) connected to the processing vacuum chamber 10. The transfer robot has two comb-shaped hands in two upper and lower stages. For example, the upper part is for carrying in and the lower part is for carrying out, and the carrying-in / out process can be performed simultaneously by one operation. Note that the film formation method of the present invention can be applied to the lower surface conveyance or the vertical conveyance in addition to the upper surface conveyance. However, as described above, the upper surface conveyance can suppress the sag caused by the enlargement of the substrate caused by the lower surface conveyance.

  Next, the loaded substrate is erected substantially vertically by the drive unit 40 and then aligned with the patterning metal 50. Examples of the patterning metal 50 include a metal mask and a metal frame. The metal mask is used for a minute opening pattern in pixel units, and is a thin metal sheet having a thickness of about 0.1 mm. The metal frame is a grid-like metal frame of a panel unit, and is a metal structure having a thickness of about several mm. The patterning metal 50 is used for dividing and patterning a film to be formed on a pixel-by-pixel or panel-by-pixel basis. At the same time, the patterning metal 50 is installed at the same potential as the processing vacuum chamber 10 and functions as an anode potential at the time of sputtering. The patterning metal 50 and the processing vacuum chamber 10 do not necessarily have the same potential, and the patterning metal 50 may be intentionally applied. By setting the patterning metal 50 and the processing vacuum chamber 10 to the same potential, a stable and uniform discharge can be obtained, and the film thickness uniformity can be improved.

Next, the cathode electrode 60 is scanned in parallel with the substrate surface in the processing vacuum chamber 10 to form an upper electrode film on the entire surface of the substrate. The film formation is performed by scanning the cathode electrode 60 at least once in front of the substrate surface, preferably two times in a reciprocating manner, but can be performed by scanning three or more times.
With the configuration of this example, the upper electrode film can be formed in a wide range of thickness from several nm to several μm. In the case of the upper electrode film for organic EL, the thickness of the upper electrode film formed by sputtering is 100 nm to 300 nm. An upper electrode film in which the difference between the maximum film thickness and the minimum film thickness of the upper electrode film is within 2% of the average film thickness of the upper electrode film can be easily obtained.

  The substrate transfer unit 30 may be provided at one place, but in this embodiment, two places are provided in the processing vacuum chamber 10. Thereby, another substrate can be formed by sputtering while aligning one substrate, and productivity is improved. That is, productivity can be improved by alternately performing alignment and film formation in one film formation chamber. In this case, the cathode electrode 60 can be formed efficiently without wasteful scanning by forming a film by reciprocally scanning left and right with the center of the two substrates as a home position.

FIG. 2 is a schematic view of the cathode electrode 60. The cathode electrode 60 is composed of a shield electrode 62 and a back permanent magnet 63 for magnetron discharge. As the sputtering target material 61, a rectangular shape on the cathode electrode 60 or a substantially rectangular shape having four corners subjected to R processing is used. The cathode electrode 60 has a longitudinal direction longer than a side in the height direction of the substrate and shorter than the other side substantially perpendicular to the height direction of the substrate. The sputtering target material 61 preferably has a single structure on the cathode electrode 60, but a split target may be used. Examples of the sputtering target material 61 include metals such as aluminum, aluminum alloy, silver, silver alloy, and magnesium alloy, transparent electrodes such as ITO, IZO, and AZO, oxides such as SiO ₂ and Si ₃ N ₄ , nitrides, IGZO, and the like. And oxide semiconductors.

  The periphery of the sputtering target material 61 is surrounded by a shield electrode 62 installed at the same potential as the processing vacuum chamber 10. A permanent magnet 63 for confining plasma with a magnetic field is disposed on the back surface of the cathode electrode 60. The permanent magnet 63 may be fixed, but may be of a swing type so that the erosion portion can be made uniform and the utilization efficiency of the sputtering target material 61 can be improved. The power supply line and cooling water of the cathode electrode 60 are supplied via a flexible pipe 64 so that the cathode electrode 60 can be scanned in a vacuum. Alternatively, the cathode electrode 60 may be attached to a robot arm incorporating the power supply line of the cathode electrode 60 and cooling water, and the robot arm and the cathode electrode 60 may be connected via a fixed pipe. The cathode electrode 60 is connected to a DC or RF power source (not shown). By connecting the cathode electrode 60 to a DC power source, film formation at a low cost and a high rate is possible. By connecting the cathode electrode 60 to an RF power source, not only a metal but also an insulating film can be formed. As described above, by using at least one DC power source or RF power source and using the inexpensive substantially rectangular sputtering target material 61 and the substantially rectangular cathode electrode 60 used in the in-line type sputtering apparatus, the apparatus cost and running are reduced. Cost can be reduced.

<Second Embodiment of Sputtering Apparatus>
FIG. 3 is a schematic view schematically showing the structure of a sputtering apparatus according to another embodiment of the present invention. 1 is substantially the same as the sputtering apparatus in FIG. 1, but is opposed to a substantially vertically upright substrate, and has a substantially rectangular shape that is longer than the width of the upright substrate and shorter than the other side that is substantially perpendicular thereto. And a parallel plate type cathode electrode 60 that can be scanned in parallel, and a sputtering target material (not shown) installed on the cathode electrode 60. In this case, the cathode electrode 60 alternately moves in front of the left and right substrates of the sputtering apparatus, and then scans in the vertical direction parallel to the substrate surface to form a film. Since the size of the processing vacuum chamber 10 corresponding to the substrate of 5.5th to 6th generations is very large, the longitudinal direction of the cathode electrode 60 is arranged in the horizontal direction in the processing vacuum chamber 10 as shown in FIG. Then, at the time of maintenance of the sputtering target replacement, it becomes easy to lower the cathode electrode 60 to the bottom of the processing vacuum chamber 10 and replace the sputtering target material 61 on the cathode electrode 60.

<Embodiment of clustering of sputtering apparatus and vapor deposition apparatus>
FIG. 4 is a schematic view schematically showing a vapor deposition apparatus according to an embodiment of the present invention. The basic chamber structure is the same as that of the sputtering apparatus shown in FIG. 1 except that a linear deposition source 70 in which a plurality of deposition sources are arranged in a line is used instead of the cathode electrode 60. The linear vapor deposition source 70 has a substantially rectangular shape, and the longitudinal direction of the linear vapor deposition source 70 is longer than the side in the height direction of the standing substrate and shorter than the other side substantially perpendicular to the height direction of the substrate. As the vapor deposition source, a ceramic crucible such as PBN or alumina or the like heated by resistance or induction can be used. The linear evaporation source 70 is scanned in the processing vacuum chamber 10 in parallel or perpendicular to the substrate surface, and an upper electrode film (deposition material) is formed on the entire surface of the substrate. If it is the upper electrode for organic EL, the film thickness of the upper electrode film | membrane formed into a film by vapor deposition will be 10 nm-20 nm. The film thickness of the upper electrode film formed by vapor deposition is smaller than the film thickness of the upper electrode film formed by sputtering. Power line and cooling water are also supplied to the deposition source by connecting to the flexible piping (not shown) similar to the sputtering apparatus, the power line of the cathode electrode 60 and the robot arm containing the cooling water through a fixed pipe. Can do. Thereby, a sputtering apparatus and a vapor deposition apparatus can be produced using the same processing vacuum chamber 10, and can be connected with good consistency. In the chamber structure of the sputtering apparatus of FIG. 3, the cathode electrode 60 may be replaced with a linear evaporation source 70 in which a plurality of evaporation sources are arranged in a line. By replacing the substantially rectangular cathode electrode 60 with the linear linear vapor deposition source 70, it is possible to manufacture the vapor deposition apparatus and the sputtering apparatus with the same cluster type processing vacuum chamber 10 design.

<Embodiment of Organic Device Manufacturing Apparatus>
FIG. 5 is a schematic diagram of an organic device manufacturing apparatus in which a sputtering apparatus and a vapor deposition apparatus according to an embodiment of the present invention are connected in a cluster. In this embodiment, an example of an apparatus for organic EL is shown. The organic EL device manufacturing apparatus includes a load chamber 80 for loading a substrate from a substrate cassette 130, a processing vacuum chamber 10, a load chamber 80, or the like of a deposition apparatus or a sputtering apparatus for depositing an organic layer and a buffer layer and an upper electrode on the substrate. The transfer chamber 90 installed between the process (sealing process), the gate valve 20 between them, the unload chamber 100 for taking out the substrate from the vacuum, the transfer chamber 90, and the transfer robot 110 in the unload chamber 100. Consists of In the processing vacuum chamber 10, a substrate delivery unit 30, a drive unit (not shown) for standing the substrate substantially vertically, a patterning metal 50 (not shown), a substantially rectangular linear vapor deposition source 70 or a cathode electrode 60. Consists of. The load chamber 80 and the unload chamber 100 include a transfer robot 110 that receives a substrate from the gate valve 20 and the transfer chamber 120 in order to maintain a vacuum, and turns to transfer the substrate into the transfer chamber 90. The transfer chamber 120 connects a sputtering apparatus, a vapor deposition apparatus, and the like. By clustering and connecting the processing vacuum chambers 10 via the transfer chamber 120, it is possible to form an upper electrode in which a deposited film and a sputtering film suitable for organic devices such as organic EL are stacked. Each delivery chamber 90 has a gate valve 20 at the front and rear, delivers a substrate from the load chamber 80 to each cluster of the processing vacuum chamber 10 while controlling the opening and closing of the gate valve 20 and maintaining a vacuum, and finally the unload chamber 100. Remove the substrate from In the organic EL manufacturing apparatus of this embodiment, a total of 10 processing vacuum chambers 10 are connected, and the lower electrode, the hole injection layer, the hole transport layer, the red, green, and blue light emitting layers, the electron transport layer, the electron injection layer, and the buffer. Layers and upper electrodes can be deposited. The upper electrode film of Al is formed by the vapor deposition apparatus in FIG. 4 and then the upper electrode film of Al is formed by the sputtering apparatus in FIGS. 1 and 3 to form a stacked upper electrode. The upper electrode using Al, which is difficult to deposit at a high speed in area, can be applied to a large substrate of 5.5th to 6th generation or more, and the damage caused to the organic layer by sputtering can be reduced.

DESCRIPTION OF SYMBOLS 10 Process vacuum chamber 20 Gate valve 30 Substrate delivery part 40 Drive part 50 Patterning metal 60 Cathode electrode 61 Sputtering target material 62 Shield electrode 63 Permanent magnet 64 Flexible piping 70 Linear vapor deposition source 80 Load room 90 Delivery room 100 Unload room 110 Transfer Robot 120 Transfer chamber 130 Substrate cassette

Claims (15)

A sputtering apparatus having a processing vacuum chamber,
A cathode electrode is provided in the processing vacuum chamber;
A sputtering target material is provided on the cathode electrode,
A substrate is transferred into the processing vacuum chamber;
A sputtering apparatus in which the sputtering target material is deposited on the substrate by scanning the cathode electrode in parallel with the substrate surface in a state where the substrate stands in a vertical direction. In claim 1,
The longitudinal direction of the cathode electrode is arranged in the vertical direction of the processing vacuum chamber,
A sputtering apparatus in which the sputtering target material is deposited on a substrate by scanning the cathode electrode in a horizontal direction. In claim 1,
The longitudinal direction of the cathode electrode is disposed in the horizontal direction of the processing vacuum chamber,
A sputtering apparatus in which the sputtering target material is deposited on a substrate by scanning the cathode electrode in a vertical direction. In any one of Claims 1 thru | or 3,
The cathode electrode is a sputtering apparatus of a parallel plate type or a rotary type. In any one of Claims 1 thru | or 4,
The cathode electrode is a sputtering apparatus connected to a DC power source or an RF power source. In any one of Claims 1 thru | or 5,
A sputtering apparatus in which the dimension of the substrate is 1300 mm × 1500 mm or more. In any one of Claims 1 thru | or 6.
The sputtering apparatus has a patterning metal,
The patterning metal patterns the sputtering target material formed on the substrate,
The patterning metal is a sputtering apparatus connected to the same potential as the processing vacuum chamber. In claim 7,
Two substrates are provided in the processing vacuum chamber,
While one of the two substrates is aligned with the patterning metal, the other of the two substrates is erected vertically, and the sputtering target material is the other substrate. Sputtering apparatus for film formation. In claim 8,
The sputtering target material is deposited on the two substrates by scanning the cathode electrodes, whose longitudinal directions are arranged in the vertical direction of the processing vacuum chamber, alternately in front of the two substrates in the horizontal direction. Sputtering equipment. In claim 8,
The sputtering apparatus is characterized in that the sputtering target material is deposited on the two substrates by vertically scanning the cathode electrode, the longitudinal direction of which is arranged in the horizontal direction of the processing vacuum chamber. A sputtering apparatus according to any one of claims 1 to 10,
A deposition apparatus in which the cathode electrode of the sputtering apparatus is replaced with a linear deposition source;
A transfer chamber connecting the sputtering apparatus and the vapor deposition apparatus;
A transport robot that carries in and out the substrate in the sputtering apparatus and the substrate in the vapor deposition apparatus,
The transport robot unloads the substrate on which the deposition material is formed by a line deposition source in the deposition apparatus from the deposition apparatus, and loads the substrate into the sputtering apparatus.
A film forming apparatus in which the sputtering target material is formed on a substrate on which the vapor deposition material is formed in the sputtering apparatus. In claim 11,
The film deposition apparatus in which the vapor deposition material and the sputtering target material formed on the substrate in the sputtering apparatus serve as the upper electrode of the organic EL. In claim 11 or 12,
The film-forming apparatus whose said vapor deposition material and said sputtering target material are Al. A film forming method of a sputtering apparatus having a processing vacuum chamber,
A cathode electrode is provided in the processing vacuum chamber;
A sputtering target material is provided on the cathode electrode,
The substrate is transferred to the upper surface in the processing vacuum chamber,
The cathode electrode is rectangular;
A film forming method for a sputtering apparatus, wherein the cathode electrode is scanned in parallel with the substrate surface in a state where the substrate is set up vertically, and the sputtering target material is formed on the substrate. A film forming method for a film forming apparatus using the sputtering apparatus according to claim 14,
A deposition apparatus in which the cathode electrode of the sputtering apparatus is replaced with a linear deposition source;
A transfer chamber connecting the sputtering apparatus and the vapor deposition apparatus;
A transport robot that carries in and out the substrate in the sputtering apparatus and the substrate in the vapor deposition apparatus,
The transport robot unloads the substrate on which the deposition material is formed by a line deposition source in the deposition apparatus from the deposition apparatus, and loads the substrate into the sputtering apparatus.
A film forming method of a film forming apparatus in which the sputtering target material is formed on a substrate on which the vapor deposition material is formed in the sputtering apparatus.

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