TWI833047B - Film-forming device, film-forming method using the same, and manufacturing method of electronic device - Google Patents

Abstract

The present invention relates to a film forming device, a film forming method using the same, and a manufacturing method of an electronic device. The present invention suppresses reduction in film formation accuracy. The film forming apparatus of the present invention is a film forming apparatus that forms a film on a substrate through a mask in a chamber, with a film forming material discharged from a film forming source. The film forming apparatus has a plurality of adhesion prevention members. The plurality of adhesion prevention members Arranged in the chamber, film-forming materials scattered in directions other than the mask are attached to the plurality of anti-adhesion members, and the distance between the opposing surface of the anti-adhesion member facing the film-forming source and the film-forming surface of the substrate is The angle between normals varies depending on the distance from the mask in the direction of the normals.

Description

Film-forming device, film-forming method using the same, and manufacturing method of electronic device

The present invention relates to a film forming device, a film forming method using the same, and a manufacturing method of an electronic device.

Organic EL display devices (organic EL displays) are widely used not only in smartphones, TVs, and automotive displays, but also in VRHMD (Virtual Reality Head Mount Display) and other applications, and their application fields are also expanding. In particular, displays used in VRHMDs are required to form pixel patterns with high precision in order to reduce user vertigo. That is, further improvement in resolution is required.

In the manufacture of an organic EL display device, when forming an organic light-emitting element (organic EL element; OLED) constituting the organic EL display device, the film-forming material discharged from the film-forming source of the film-forming device is passed through a mask on which a pixel pattern is formed. The cover is formed on the substrate to form an organic layer and a metal layer.

In such a film forming apparatus, the film forming material discharged from the film forming source also adheres to and accumulates on locations other than the mask and the substrate. When the accumulated film-forming material grows to a certain film thickness, it becomes easy to peel off and becomes a source of particles. Therefore, maintenance is performed to regularly remove accumulated film-forming materials. Conventionally, in order to facilitate this maintenance, an anti-adhesion plate removable from the chamber has been provided at locations other than the mask and the substrate where the film-forming material discharged from the film-forming source scatters (Patent Document 1). [Prior technical literature] [Patent Document]

Patent Document 1: Japanese Patent Application Publication No. 2010-174344

[Problem to be solved by the invention]

When an anti-adhesion plate is provided in the chamber, the anti-adhesion plate is heated by radiant heat from the film-forming source or the scattered film-forming material, and the temperature rises. When the temperature of the anti-adhesion plate rises, the substrate and the mask are heated by radiant heat generated from the anti-adhesion plate. When the substrate and the mask are heated and the temperature rises, the relative positions of the substrate and the mask will shift due to different thermal expansion coefficients of the substrate and the mask. That is, there is a problem that the substrate and the mask are heated by the anti-adhesion plate disposed in the chamber, resulting in a decrease in film formation accuracy.

Therefore, the present invention is made in view of the above-mentioned problems of the prior art, and an object thereof is to suppress a decrease in film formation accuracy. [Means used to solve problems]

A film forming device according to one aspect of the present invention is a film forming device that forms a film on a substrate through a mask in a chamber, with a film forming material discharged from a film forming source, the film forming device having a plurality of anti-adhesion members, the aforementioned A plurality of anti-adhesion members are disposed in the chamber and adhere to the film-forming material scattered in directions other than the mask. On the plurality of anti-adhesion members, the opposing surfaces of the anti-adhesion members facing the film-forming source and the aforementioned The angle between the normal lines of the film formation surface of the substrate varies depending on the distance from the mask in the direction of the normal lines.

In addition, a film forming apparatus according to another aspect of the present invention is a film forming apparatus that forms a film on a substrate through a mask on a film forming material discharged from a film forming source in a chamber, and the film forming apparatus is provided with: A first anti-adhesion member, which is disposed in the chamber and adheres the film-forming material scattered from the film-forming source; and The second anti-adhesion member is disposed in the chamber, the distance between the second anti-adhesion member and the mask is greater than the distance between the first anti-adhesion member and the mask, and adheres to the film formed from the source of film-forming materials scattered, The first angle between the first facing surface of the first adhesion prevention member facing the film formation source and the normal line of the film formation surface of the substrate is greater than the first angle between the first facing surface of the first adhesion prevention member facing the film formation source and the normal line of the film formation surface of the substrate. The second angle between the second facing surface and the aforementioned normal line.

In addition, a film forming apparatus according to another aspect of the present invention is a film forming apparatus that forms a film on a substrate through a mask in a chamber using a film forming material discharged from a film forming source, The film forming apparatus has an adhesion prevention member, the adhesion prevention member is disposed in the chamber, and adheres the film formation material scattered from the film formation source, and the adhesion prevention member is provided obliquely with respect to the wall surface of the chamber so that the substrate is In the normal direction of the film formation surface, the central end portion inside the chamber is closer to the mask than the end portion connected to the wall surface of the chamber. [Effects of the invention]

According to the present invention, it is possible to suppress a decrease in film formation accuracy.

Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples are examples illustrating preferred structures of the present invention, and the scope of the present invention is not limited to these structures. In addition, as long as there are no limiting descriptions about the hardware structure and software structure, processing flow, manufacturing conditions, dimensions, materials, shapes, etc. of the device in the following description, the scope of the present invention is not intended to be limited thereto.

The present invention can be applied to an apparatus that deposits various materials on the surface of a substrate to form a film, and can be applied to an apparatus that forms a thin film (material layer) of a desired pattern by vacuum evaporation.

As the material of the substrate, any material such as semiconductor (for example, silicon), glass, polymer material film, or metal can be selected. The substrate may be, for example, a silicon wafer or a glass substrate on which a film such as polyimide is laminated. substrate. In addition, as the film-forming material, any material such as an organic material or a metallic material (metal, metal oxide) can be selected.

In addition, the present invention can be applied to a film forming apparatus including a sputtering apparatus and a CVD (Chemical Vapor Deposition) apparatus in addition to a vacuum evaporation apparatus using heating evaporation. Specifically, the technology of the present invention can be applied to manufacturing equipment of various electronic devices such as semiconductor devices, magnetic devices, and electronic components, and optical components. Specific examples of electronic devices include light-emitting elements, photoelectric conversion elements, touch panels, and the like. Among them, the present invention is preferably applicable to equipment for manufacturing organic light-emitting elements such as OLEDs and organic photoelectric conversion elements such as organic thin-film solar cells. In addition, the electronic device in the present invention also includes a display device (such as an organic EL display device) or a lighting device (such as an organic EL lighting device) equipped with a light-emitting element, and a sensor equipped with a photoelectric conversion element (such as an organic CMOS image sensor). device).

＜Electronic device manufacturing equipment＞ FIG. 1 is a plan view schematically showing the structure of a part of an electronic device manufacturing apparatus.

The manufacturing apparatus in FIG. 1 is used, for example, for manufacturing a display panel of an organic EL display device for a smartphone or an organic EL display device for a VRHMD. In the case of a display panel for a smartphone, for example, the 4.5th generation substrate (approximately 700mm 925mm) substrate for forming an organic EL element, the substrate was cut out to produce a plurality of small-sized panels. In the case of a display panel for VRHMD, for example, after film formation for forming organic EL elements is performed on a silicon wafer of a predetermined size (for example, 300 mm), it is then cut along the area (dicing street area) between the element formation areas. The silicon wafer is removed and made into multiple small-sized panels.

A manufacturing device of an electronic device generally includes a plurality of cluster devices 1 and a relay device connecting the cluster devices 1 .

The cluster device 1 includes a plurality of film-forming devices 11 that process (eg, film-form) a substrate W, a plurality of mask storage devices 12 that store masks before and after use, and a transfer chamber 13 arranged in the center. As shown in FIG. 1 , the transfer chamber 13 is connected to a plurality of film forming devices 11 and a mask storage device 12 respectively.

A transfer robot 14 that transfers the substrate and the mask is arranged in the transfer chamber 13 . The transfer robot 14 transfers the substrate W from the passage chamber 15 of the relay device arranged on the upstream side to the film forming device 11 . In addition, the transfer robot 14 transfers the mask between the film forming device 11 and the mask storage device 12 . The transfer robot 14 is, for example, a robot having a structure in which a robot arm holding the substrate W or the mask is attached to a multi-joint arm.

In the film forming apparatus 11 (also referred to as a vapor deposition apparatus), the vapor deposition material contained in the evaporation source is heated by a heater and evaporated, and is evaporated on the substrate through the mask. A series of film-forming processes include the delivery of the substrate W to the transfer robot 14, adjustment (alignment) of the relative position of the substrate W and the mask, fixation of the substrate W to the mask, and film formation (vapor deposition). Device 11 is carried out.

In the mask storage device 12 , new masks used in the film forming process in the film forming device 11 and used masks are separately stored in two boxes. The transfer robot 14 transfers the completed mask from the film forming device 11 to the box of the mask storage device 12 , and transfers a new mask stored in another box of the mask storage device 12 to the film forming device 11 .

The cluster device 1 is connected to a passage chamber 15 for transferring the substrate W from the upstream side to the cluster device 1 in the flow direction of the substrate W, and a buffer chamber 16 for transferring the substrate W to the cluster device 1 . The substrate W whose film formation process has been completed in this cluster apparatus 1 is conveyed to other cluster apparatuses on the downstream side. The transfer robot 14 of the transfer chamber 13 receives the substrate W from the upstream passage chamber 15 and transfers it to one of the film forming devices 11 in the cluster device 1 (for example, the film forming device 11a). In addition, the transfer robot 14 receives the substrate W that has completed the film formation process in the cluster device 1 from one of the plurality of film formation devices 11 (for example, the film formation device 11 b), and transfers it to a buffer chamber connected to the downstream side. 16 moving.

A swirl chamber 17 for changing the direction of the substrate is provided between the buffer chamber 16 and the passage chamber 15 . The swirl chamber 17 is provided with a transfer robot 18 that receives the substrate W from the buffer chamber 16 , rotates the substrate W 180°, and transfers the substrate W to the passage chamber 15 . Accordingly, the directions of the substrates W are the same in the cluster device on the upstream side and the cluster device on the downstream side, making substrate processing easier.

The passage chamber 15, the buffer chamber 16, and the swirl chamber 17 are so-called relay devices that connect cluster devices. The relay devices provided on the upstream and/or downstream sides of the cluster devices include the passage chamber, the buffer chamber, and the swirl chamber. of at least one.

The film forming device 11, the mask storage device 12, the transfer chamber 13, the buffer chamber 16, the swirl chamber 17, etc. are maintained in a high vacuum state during the manufacturing process of the organic light-emitting element. The passage chamber 15 is usually maintained in a low vacuum state, but may be maintained in a high vacuum state as necessary.

In this embodiment, the structure of the electronic device manufacturing apparatus has been described with reference to FIG. 1 , but the present invention is not limited thereto. Other types of apparatuses and chambers may be provided, and the arrangement between these apparatuses and chambers may be It can also be changed. For example, the electronic device manufacturing apparatus according to one embodiment of the present invention may not be the cluster type shown in FIG. 1 but may be an in-line type. That is, a structure may be provided in which the substrate and the mask are mounted on a carrier and film formation is performed while being conveyed in a plurality of film formation apparatuses arranged in a line. In addition, you may have a structure that combines the cluster type and the continuous type. For example, before the organic layer is formed, it may be performed in a cluster-type manufacturing apparatus, and from the film-forming process of the electrode layer (cathode layer), the sealing process, cutting process, etc. may be performed in a continuous-type manufacturing apparatus. .

Hereinafter, the specific structure of the film forming apparatus 11 will be described.

＜Film forming device＞

FIG. 2 is a schematic diagram showing the structure of the film forming apparatus 11 according to one embodiment of the present invention. The film forming apparatus 11 heats the film forming material of the film forming source to evaporate or sublime it, and forms a film on the substrate W through the mask M. The relative position adjustment (alignment) of the substrate W and the mask M is performed by performing position matching using stage driving. A series of film formation processes from alignment to film formation are performed in a vacuum evaporation device.

The film forming apparatus 11 is composed of a vacuum chamber 21 maintained in a vacuum environment or an inert gas environment such as nitrogen. It includes a fine movement stage mechanism 22 for adjusting the position of the substrate W, a substrate adsorption means 24 for adsorbing and holding the substrate W, a mask placement stage 23 for supporting the mask M, and a coarse movement for adjusting the position of the mask M. The stage 232 and the film-forming source 25 heat and discharge the film-forming material.

The film forming apparatus 11 according to the embodiment of the present invention may further include magnetic force applying means 26 for bringing the metal mask M into close contact with the substrate W using magnetic force.

By connecting the vacuum pump P to the vacuum chamber 21 of the film forming apparatus 11 according to one embodiment of the present invention, the internal space of the vacuum chamber 21 can be maintained in a high vacuum state.

The fine movement stage mechanism 22 is a stage mechanism for adjusting the position of the substrate W or the substrate adsorption means 24, and can make the relative position of the substrate W with respect to the mask M below a threshold value. The fine movement table mechanism 22 includes a reference plate part 221 (first plate part) functioning as a support structure and a fine movement table part 222 (second plate part) functioning as a movable table.

The fine movement table mechanism 22 can adjust the position of the substrate W or the substrate adsorption means 24 with high precision, and therefore can be configured as a magnetic levitation table mechanism driven by a magnetic levitation linear motor. That is, for example, a coil through which current flows in the reference plate portion 221 is provided as a stator, and a permanent magnet is provided as a movable element in a corresponding area of the fine movement plate portion 222 , so that the fine movement plate portion 222 is positioned relative to the reference plate portion 221 . By moving in the magnetic levitation state, the positions of the substrate adsorbing means 24 mounted on one main surface (for example, the lower surface) of the fine movement platen portion 222 and the substrate W adsorbed on the substrate adsorbing means 24 can be adjusted with high precision. The fine movement table mechanism 22 can also include a position measuring means for measuring the position of the fine movement table section 222, a self-weight compensation means for compensating the gravity applied to the fine movement table section 222, and a principle for determining the fine movement table section 222. Point position origin positioning means, etc.

The mask mounting base 23 is a support structure for mounting and fixing the mask M, and is provided on the coarse movement base 232 . Thereby, the relative position of the mask M with respect to the substrate W and the vertical distance can be adjusted.

The mask M has an opening pattern corresponding to the thin film pattern formed on the substrate W, and is supported by the mask mounting base 23 . For example, the mask M used to manufacture an organic EL display panel for VRHMD includes a fine metal mask and an open mask. The fine metal mask is formed with an organic EL element. A metal mask with a fine opening pattern corresponding to the RGB pixel pattern of the light-emitting layer. The open mask is used to form the common layers (hole injection layer, hole transport layer, electron transport layer, electron injection layer) of the organic EL element. layer, etc.). The opening pattern of the mask M is defined by a blocking pattern that does not allow particles of the film-forming material to pass. In addition, the mask M is sometimes made of silicon.

The substrate adsorption means 24 is a means for adsorbing and holding the substrate W as a film-forming body that is carried into the apparatus. The substrate suction means 24 is provided on the fine movement platen portion 222 which is a movable table of the fine movement table mechanism 22 . The substrate adsorption means 24 is, for example, an electrostatic chuck having a structure in which circuits such as metal electrodes are embedded in a dielectric or insulator (for example, ceramic material) base. The electrostatic chuck used as the substrate adsorption means 24 can be a Coulomb force type electrostatic chuck, a Johnsen Rahbeck force type electrostatic chuck, or a gradient force type electrostatic chuck. The Coulomb force type electrostatic chuck The electrostatic chuck holds a relatively high-resistance dielectric between the electrode and the adsorption surface, and adsorbs through the Coulomb force between the electrode and the adsorbed body. The Johnson-Labeck force type electrostatic chuck has a gap between the electrode and the adsorption surface. A relatively low-resistance dielectric is sandwiched between the surfaces, and adsorption is performed using the Johnson-Rabeck force generated between the adsorption surface of the dielectric and the adsorbed object. The gradient force type electrostatic chuck uses a non-uniform electric field to adsorb. Adsorbed body. When the object to be adsorbed is a conductor or a semiconductor (silicon wafer), it is preferable to use a Coulomb force type electrostatic chuck or a Johnson-Labeck force type electrostatic chuck. When the object to be adsorbed is an insulator such as glass, it is preferable to use an electrostatic chuck. Use gradient force type electrostatic chuck.

The film formation source 25 includes a crucible (not shown) that accommodates a film forming material to be formed on the substrate W, a heater (not shown) for heating the crucible, and the like. The film formation source 25 can have a point film formation source, a linear film formation source, etc., and has various structures according to the purpose.

The magnetic force applying means 26 is a means for drawing the metal mask M closer to the substrate W side by magnetic force during film formation and bringing it into close contact with the metal mask M, and is provided so as to be able to move up and down in the vertical direction. For example, the magnetic force applying means 26 is composed of an electromagnet or a permanent magnet. A lifting mechanism 27 for lifting and lowering the magnetic force applying means 26 is provided on the upper outer side (atmosphere side) of the vacuum chamber 21 . When the vapor deposition position where the substrate W and the mask M are in contact is reached, the magnetic force applying means 26 is lowered and the mask M is brought closer via the electrostatic chuck 24 and the substrate W, thereby bringing the substrate W and the mask M into close contact. Here, when the mask M is made of silicon instead of metal, the magnetic force applying means 26 is not required.

The film forming apparatus 11 is provided with an anti-adhesion member 30 inside the vacuum chamber 21 . The adhesion prevention member 30 prevents the film-forming material discharged from the film-forming source 25 that scatters in directions other than the mask M from adhering to other parts other than the substrate W of the film-forming apparatus 11 . The adhesion prevention member 30 is made of a metal plate such as stainless steel or aluminum. Every time film formation is repeated, excess film formation material adheres. Therefore, the adhesion prevention member 30 can be periodically removed and attached to the vacuum chamber 21 for cleaning. External move-out structure. A plurality of anti-adhesion members 30 can be provided so as to effectively cover different areas inside the vacuum chamber 21 . The detailed arrangement structure of the adhesion prevention member 30 according to the embodiment of the present invention will be described later.

In the above description, the film forming device 11 has a so-called upward evaporation method (upward deposition) structure in which a film is formed with the film forming surface of the substrate W facing downward in the vertical direction. However, the present invention does not Limited to this. The structure may be such that the substrate W is arranged to stand vertically to the side surface of the vacuum chamber 21 and the film formation surface of the substrate W is formed parallel to the direction of gravity. In addition, as a structure for adjusting (aligning) the relative position of the substrate W with respect to the mask M, a magnetic floating table mechanism is used to move the substrate W while being adsorbed to an electrostatic chuck as a substrate adsorption means. Although the example has been described, the substrate and the mask may be respectively placed on a support base that supports the outer periphery, and they may be moved using a mechanical stage mechanism composed of a mechanical motor, a ball screw, a linear guide, etc.

＜Film formation process＞ Hereinafter, a film forming method using the film forming apparatus of this embodiment will be described.

With the mask M supported on the mask mounting table 23 in the vacuum chamber 21 , the substrate W is carried into the vacuum chamber 21 . After the loaded substrate W is sufficiently close to or in contact with the substrate adsorbing means 24, a substrate adsorbing voltage is applied to the substrate adsorbing means 24 to adsorb the substrate W. The substrate W and the mask M are aligned by driving the fine movement stage mechanism 22 and the coarse movement stage 232 . When the deviation of the relative positions of the substrate W and the mask M is less than a predetermined threshold, the magnetic force applying means 26 is lowered to bring the substrate W and the mask M into close contact, and then the film-forming material is formed on the substrate W. After the film is formed to a desired thickness, the magnetic force applying means 26 is raised to separate the mask M, and the substrate W is carried out.

＜Arrangement structure of anti-adhesion members＞ FIG. 3 is a schematic cross-sectional view of the film forming apparatus showing the arrangement structure of the adhesion prevention member 30 according to one embodiment of the present invention.

In FIG. 3 , a film formation source 25 is provided on the bottom surface of the vacuum chamber 21 . The film-forming source 25 has a discharge hole for the film-forming material, and the film-forming surfaces of the substrate W and the mask M are arranged to face the discharge hole at the front end where the discharge hole points. The mask M is provided with pattern holes that allow the film-forming material to pass through a desired location, so that the film-forming material discharged from the film-forming source 25 can adhere to the substrate W in a desired pattern via the mask M.

In order to discharge the film-forming material from the film-forming source 25, the inside of the crucible 25a in the film-forming source 25 is heated to a high temperature of, for example, 500°C.

In addition, inside the vacuum chamber 21 , the adhesion prevention member 30 is provided adjacent to the wall of the vacuum chamber 21 so as to surround the film formation source 25 . Thereby, the film-forming material discharged from the film-formation source 25 and scattered in directions other than the mask M adheres to the adhesion prevention member 30 .

The anti-adhesion member 30 is usually made of a metal plate such as stainless steel or aluminum. As described above, during film formation, such adhesion prevention member 30 receives radiant heat from the film formation source 25 and its temperature rises, thereby becoming a radiant heat source that affects the relative position of the substrate W and the mask M, and may reduce the relationship between the substrate W and the mask M. The reason for the alignment accuracy of the cover M.

According to the present invention, first, the arrangement angle of the adhesion prevention member 30 is optimized to suppress changes in the relative position of the substrate W and the mask M caused by the adhesion prevention member 30 that becomes a radiant heat source. More specifically, the adhesion preventing member 30 is provided at an angle that can minimize the viewing factor with respect to the mask M as the radiated object. Here, the horizon factor refers to the area of the radiant heat source observed from the radiated object. The smaller the horizon factor, the less the influence produced by the same radiant heat source.

According to the embodiment of the present invention, the adhesion prevention member 30 is provided obliquely with respect to the wall surface of the vacuum chamber 21 . More specifically, for example, when the adhesion prevention member 30 is arranged between the film formation source 25 and the mask M, the adhesion prevention member 30 is provided obliquely so that in the normal direction of the film formation surface of the substrate, the vacuum chamber The center side end portion inside the chamber 21 is closer to the mask M than the end portion connected to the wall surface of the vacuum chamber 21 (wall surface side end portion), and is provided as a straight line connecting the wall surface side end portion and the center side end portion. The extension line is approximately towards the center of the mask M. This makes it possible to reduce the area of the adhesion prevention member 30 when viewed from the mask M, suppress the viewing factor from the adhesion prevention member 30 to the substrate W and the mask M, and thus prevent the adhesion prevention member 30 from spreading to the substrate W and the mask M. Mask M's radiant heat. Therefore, it is possible to suppress a decrease in the alignment accuracy of the substrate W and the mask M.

According to this embodiment of the present invention, the arrangement angle of the adhesion preventing member 30 changes depending on the relative position to the mask M. Specifically, when the adhesion prevention member 30 has a plurality of adhesion prevention members 31 to 34 having different relative positions with respect to the mask M (in the case of FIG. 3 , distances in the vertical direction), each adhesion prevention member The angle (θ1, θ2, θ3, θ4 in Figure 3) formed by the opposing surfaces of 31 to 34 facing the film formation source and the normal line of the film formation surface of the substrate increases along the direction of the normal line of the film formation surface of the substrate. The distance from the mask M becomes farther and smaller (θ1>θ2>θ3>θ4).

According to one aspect of this embodiment, the surface of the adhesion prevention member 30 may be formed of a material and/or structure capable of reducing emissivity. More specifically, the adhesion prevention member 30 is made of a metal plate such as stainless steel or aluminum. However, the outer surface 30 a of the adhesion prevention member 30 facing the wall surface of the vacuum chamber 21 is formed into a nickel plating layer, thereby reducing the emissivity. In addition, if necessary, in addition to nickel plating, mirror processing is performed by grinding to further reduce the emissivity. This can reduce the influence of radiation heat from the outside air passing through the wall surface of the vacuum chamber 21 .

In addition, the inner surface 30b of the anti-adhesion member 30 facing the film formation source 25 is also formed into a nickel plated layer like the outer surface 30a. In addition, if necessary, it is mirror-finished to reduce the emissivity. This can suppress the temperature rise of the adhesion prevention member 30 caused by receiving radiant heat from the film formation source 25 .

In addition, according to another aspect of this embodiment, when the outside air is lower than the assumed temperature of the adhesion prevention member 30 , the temperature of the adhesion prevention member 30 can be suppressed by radiating heat from the adhesion prevention member 30 to the wall surface of the vacuum chamber 21 rise. In this case, it is effective to improve the emissivity by treating the outer surface 30 a of the anti-adhesion member 30 with a DLC (diamond-like carbon) film. As a method of increasing the emissivity of the outer surface 30a, in addition to the above-mentioned DLC film treatment, a surface roughening treatment, a black surface treatment, or the like can be applied. Examples of such surface treatment include spray processing, black plating, oxide film formation, thermal spraying, and the like.

<Manufacturing method of electronic device> Next, an example of a manufacturing method of an electronic device using the film forming apparatus of this embodiment will be described. Hereinafter, as an example of an electronic device, the structure and manufacturing method of an organic EL display device are illustrated.

First, the manufactured organic EL display device will be described. (a) of FIG. 4 shows an overall view of the organic EL display device 60, and (b) of FIG. 4 shows a cross-sectional structure of one pixel.

As shown in FIG. 4( a ), a plurality of pixels 62 including a plurality of light-emitting elements are arranged in a matrix in the display area 61 of the organic EL display device 60 . Details will be described later. Each light-emitting element has a structure including an organic layer sandwiched between a pair of electrodes. In addition, the pixel mentioned here refers to the smallest unit capable of displaying a desired color in the display area 61 . In the organic EL display device of this embodiment, the pixel 62 is composed of a combination of the first light-emitting element 62R, the second light-emitting element 62G, and the third light-emitting element 62B that emit different light emissions. The pixel 62 is usually composed of a combination of a red light-emitting element, a green light-emitting element, and a blue light-emitting element. However, it may also be a combination of a yellow light-emitting element, a cyan light-emitting element, and a white light-emitting element. There is no particular requirement as long as it is at least one color. limit.

FIG. 4(b) is a partial cross-sectional schematic diagram along line A-B of FIG. 4(a). The pixel 62 has an organic EL element including an anode 64, a hole transport layer 65, any one of the light-emitting layers 66R, 66G, and 66B, an electron transport layer 67, and a cathode 68 on a substrate 63. Among them, the hole transport layer 65, the light-emitting layers 66R, 66G, and 66B, and the electron transport layer 67 correspond to organic layers. In addition, in this embodiment, the light-emitting layer 66R is an organic EL layer that emits red light, the light-emitting layer 66G is an organic EL layer that emits green light, and the light-emitting layer 66B is an organic EL layer that emits blue light. The light-emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light-emitting elements (sometimes referred to as organic EL elements) that emit red light, green light, and blue light, respectively. In addition, the anode 64 is formed separately for each light-emitting element. The hole transport layer 65, the electron transport layer 67, and the cathode 68 may be commonly formed in the plurality of light-emitting elements 62R, 62G, and 62B, or may be formed for each light-emitting element. In addition, in order to prevent the anode 64 and the cathode 68 from being short-circuited due to foreign matter, an insulating layer 69 is provided between the anodes 64 . In addition, since the organic EL layer is deteriorated by moisture and oxygen, a protective layer 70 is provided to protect the organic EL element from moisture and oxygen.

In FIG. 4(b) , the hole transport layer 65 and the electron transport layer 67 are represented by one layer. However, depending on the structure of the organic EL display element, they may be composed of multiple layers including a hole blocking layer and an electron blocking layer. layer formation. In addition, a hole injection layer having an energy band structure that can smoothly inject holes from the anode 64 to the hole transport layer 65 can also be formed between the anode 64 and the hole transport layer 65 . Similarly, an electron injection layer can be formed between the cathode 68 and the electron transport layer 67 .

Next, an example of a method of manufacturing an organic EL display device will be described in detail.

First, a circuit (not shown) for driving the organic EL display device and the substrate 63 on which the anode 64 is formed are prepared.

On the substrate 63 on which the anode 64 is formed, an acrylic resin is formed by spin coating, and the acrylic resin is patterned by photolithography so that openings are formed in the portion where the anode 64 is formed, and an insulating layer 69 is formed. This opening corresponds to the light-emitting area where the light-emitting element actually emits light.

The substrate 63 with the insulating layer 69 patterned is moved into the first organic material film forming apparatus, the substrate is held by an electrostatic chuck, and the hole transport layer 65 is formed as a common layer on the anode 64 in the display area. The hole transport layer 65 is formed by vacuum evaporation. Since the hole transport layer 65 is actually formed to have a larger size than the display area 61, a high-definition mask is not required.

Next, the substrate 63 formed with the hole transport layer 65 is moved into the second organic material film forming apparatus and held by an electrostatic chuck. The substrate and mask are aligned, and the mask is attracted by a magnet plate and brought into close contact with the substrate. Then, a light-emitting layer 66R that emits red light is formed on the portion of the substrate 63 where the element that emits red light is disposed.

In the same manner as the film formation of the luminescent layer 66R, the luminescent layer 66G that emits green light is formed using a third organic material film forming apparatus, and the luminescent layer 66B that emits blue light is formed using a fourth organic material film forming apparatus. membrane. After the film formation of the light-emitting layers 66R, 66G, and 66B is completed, the electron transport layer 67 is formed over the entire display area 61 using the fifth film forming apparatus. The electron transport layer 67 is formed as a layer common to the three-color light-emitting layers 66R, 66G, and 66B.

The substrate formed with the electron transport layer 67 is moved in a metallic vapor deposition material film forming apparatus, and the cathode 68 is formed into a film.

Then, it moves to a plasma CVD apparatus, and the protective layer 70 is formed, and the organic EL display device 60 is completed.

After the substrate 63 on which the insulating layer 69 is patterned is loaded into the film forming apparatus until the film formation of the protective layer 70 is completed, if it is exposed to an environment containing moisture and oxygen, the light-emitting layer composed of the organic EL material may Deteriorated by moisture and oxygen. Therefore, in this example, the loading and unloading of the substrate between the film forming apparatuses is performed in a vacuum environment or an inert gas environment.

The above-described embodiment is only an example of the present invention, and the present invention is not limited to the structure of the above-described embodiment, and may be appropriately modified within the scope of the technical idea.

11: Film forming device 21: Vacuum chamber 25: Film forming source 30,31,32,33,34: Anti-adhesion components

[Fig. 1] Fig. 1 is a plan view schematically showing the structure of a part of an electronic device manufacturing apparatus. 2 is a schematic diagram showing the structure of a film forming apparatus according to an embodiment of the present invention. 3 is a schematic cross-sectional view of a film forming apparatus showing an arrangement structure of an anti-adhesion member according to one embodiment of the present invention. [Fig. 4] is a schematic diagram showing an electronic device.

21: Vacuum chamber

25: Film forming source

25a: Crucible

30,31,32,33,34: Anti-adhesion components

30a: Outside surface

30b:Inside surface

M: mask

W: substrate

Claims (7)

A film forming device that forms a film on a substrate through a mask in a chamber using a film forming material discharged from a film forming source. The film forming device is provided with a plurality of anti-adhesion members, and the plurality of anti-adhesion members are arranged on the aforementioned In the chamber, the film-forming material scattered from the film-forming source is adhered. The plurality of anti-adhesion members include a first anti-adhesion member and a second anti-adhesion member. The first anti-adhesion member and the aforementioned second anti-adhesion member are different Individually, each has a wall side end portion located at different positions on the wall side of the same side of the chamber and a center side end portion inside the chamber, the first adhesion prevention member and the second adhesion prevention member , is inclined with respect to the wall surface of the chamber, and is arranged at the center side end portion in the normal direction of the film formation surface of the substrate in order to suppress the viewing factor and thereby the radiant heat reaching the substrate and the mask. The distance between the second adhesion prevention member and the mask is greater than the distance between the first adhesion prevention member and the mask, and the first adhesion prevention member opposite to the film forming source is located closer to the mask than the wall side end. The first angle ratio between the first facing surface of the member and the normal line of the film formation surface of the substrate is the second angle ratio between the second facing surface of the second adhesion preventing member facing the film formation source and the normal line. Big angle. The film forming apparatus according to claim 1, wherein the plurality of anti-adhesion members further include a third anti-adhesion member, The distance between the third anti-adhesion member and the mask is greater than the distance between the second anti-adhesion member and the mask, and the distance between the third opposing surface of the third anti-adhesion member facing the film-forming source and the normal line The third angle is smaller than the aforementioned second angle. The film forming apparatus according to claim 1, wherein each of the plurality of adhesion prevention members has the wall surface side end portion and the center side end portion, so as to connect the wall surface side end portion and the center side end portion of each adhesion prevention member. An extension of the straight line is set in a manner that passes through the center of the aforementioned mask. The film forming apparatus according to any one of claims 1 to 3, wherein each of the plurality of anti-adhesion members has an opposing surface facing the film forming source, and the opposing surface is mirror-finished. The film forming apparatus according to any one of claims 1 to 3, wherein each of the plurality of anti-adhesion members has an outer surface facing the wall surface of the chamber, and the outer surface is mirror-finished. A film forming method that uses the film forming device according to any one of claims 1 to 3 to form a film forming material on a substrate through a mask inside a chamber of the film forming device. A method of manufacturing an electronic device using the film forming method of claim 6 to manufacture the electronic device.

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