JP7170017B2 - Film forming apparatus, film forming method using the same, and electronic device manufacturing method - Google Patents

Description

The present invention relates to a film forming apparatus, a film forming method using the same, and a method of manufacturing an electronic device.

Organic EL display devices (organic EL displays) are not limited to smartphones, televisions, and displays for automobiles, and their application fields are expanding to VR HMDs (Virtual Reality Head Mount Displays) and the like. In particular, displays used for VR HMDs are required to form pixel patterns with high definition in order to reduce dizziness of users. That is, there is a demand for higher resolution.

In the manufacture of an organic EL display device, when forming an organic light emitting element (organic EL element; OLED) that constitutes the organic EL display device, the film forming material discharged from the film forming source of the film forming apparatus is used as a pixel pattern. An organic layer or a metal layer is formed by forming a film on a substrate through a mask on which is formed.

In such a film forming apparatus, the film forming material discharged from the film forming source adheres and accumulates on places other than the mask and the substrate. When the deposited film material grows to a certain thickness, it becomes easy to separate and becomes a source of particle generation. Therefore, maintenance is performed periodically to remove the deposited film forming material. Conventionally, in order to facilitate this maintenance, an anti-adhesion plate that can be removed from the chamber has been installed at a place other than the mask or substrate where the film-forming material discharged from the film-forming source scatters ( Patent document 1).

JP 2010-174344 A

When the anti-adhesion plate is installed in the chamber, the anti-adhesion plate is heated by the radiant heat from the film forming source and the scattering film-forming material, and the temperature rises. When the temperature of the anti-adhesion plate rises, the substrate and mask are heated by radiant heat generated from the anti-adhesion plate. When the substrate and the mask are heated and the temperature rises, the relative positions of the substrate and the mask are shifted due to the difference in coefficient of thermal expansion between the substrate and the mask. That is, there is a problem that the substrate and the mask are heated by the deposition-preventing plate arranged in the chamber, and the deposition accuracy is lowered.

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to suppress deterioration in film formation accuracy in view of the above-described problems of the prior art.

A film forming apparatus according to an embodiment of the present invention is a film forming apparatus for forming a film on a substrate through a mask with a film forming material discharged from a film forming source in a chamber, the film forming apparatus being arranged in the chamber, a plurality of deposition-inhibiting members to which the film-forming material scattered from the film-forming source adheres, wherein the plurality of deposition-inhibiting members are formed on the surface of the deposition-inhibiting member facing the film-forming source and on the substrate; The angle with the normal to the surface varies depending on the distance from the mask in the direction of the normal, and the farther the distance from the mask in the direction of the normal, the greater the distance between the facing surface and the normal. is characterized by a small angle of

According to the present invention, it is possible to suppress deterioration in film formation accuracy.

FIG. 1 is a plan view schematically showing a configuration of part of an electronic device manufacturing apparatus. FIG. 2 is a schematic diagram showing the configuration of a film forming apparatus according to one embodiment of the present invention. FIG. 3 is a schematic cross-sectional view of a film forming apparatus showing an arrangement structure of a deposition-inhibiting member according to one embodiment of the present invention. FIG. 4 is a schematic diagram showing an electronic device.

Preferred embodiments and examples of the present invention will now be described with reference to the drawings. However, the following embodiments and examples exemplify preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. In addition, the hardware configuration and software configuration of the apparatus, processing flow, manufacturing conditions, dimensions, materials, shapes, etc. in the following description are intended to limit the scope of the present invention only to these unless otherwise specified. not a thing

INDUSTRIAL APPLICABILITY The present invention can be applied to an apparatus for forming a film by depositing various materials on the surface of a substrate, and can be suitably applied to an apparatus for forming a thin film (material layer) with a desired pattern by vacuum deposition. .

As the material of the substrate, any material such as semiconductor (for example, silicon), glass, polymer material film, metal, etc. can be selected. may be a laminated substrate. In addition, any material such as an organic material and a metallic material (metal, metal oxide) can be selected as a film forming material.

It should be noted that the present invention can also be applied to a film forming apparatus including a sputtering apparatus and a CVD (Chemical Vapor Deposition) apparatus in addition to the vacuum vapor deposition apparatus that uses heat evaporation. Specifically, the technology of the present invention can be applied to various electronic devices such as semiconductor devices, magnetic devices, and electronic parts, and manufacturing apparatuses for optical parts and the like. Specific examples of electronic devices include light-emitting elements, photoelectric conversion elements, and touch panels. Among others, the present invention is preferably applicable to manufacturing apparatuses for organic light-emitting elements such as OLEDs and organic photoelectric conversion elements such as organic thin-film solar cells. The electronic device in the present invention includes a display device (eg, an organic EL display device) and a lighting device (eg, an organic EL lighting device) equipped with a light-emitting element, and a sensor (eg, an organic CMOS image sensor) equipped with a photoelectric conversion element. It is a thing.

<Electronic Device Manufacturing Equipment>
FIG. 1 is a plan view schematically showing a configuration of part of an electronic device manufacturing apparatus.

The manufacturing apparatus of FIG. 1 is used, for example, for manufacturing display panels of organic EL display devices for smartphones or organic EL display devices for VR HMDs. In the case of a display panel for smartphones, for example, a 4.5th generation substrate (about 700 mm x about 900 mm) or a 6th generation full size (about 1500 mm x about 1850 mm) or half cut size (about 1500 mm x about 925 mm) substrate After forming a film for forming an organic EL element, the substrate is cut out to manufacture a plurality of small-sized panels. In the case of a display panel for VR HMD, for example, after film formation for forming an organic EL element is performed on a silicon wafer of a predetermined size (for example, 300 mm), a region (scribe region) between the device formation regions is covered with The silicon wafer is cut along to fabricate a plurality of small size panels.

An electronic device manufacturing apparatus generally includes a plurality of cluster apparatuses 1 and a relay apparatus that connects the cluster apparatuses 1 .

The cluster device 1 includes a plurality of film forming devices 11 that perform processing (for example, film formation) on substrates W, a plurality of mask stock devices 12 that store masks before and after use, and a transfer chamber 13 arranged in the center. , The transfer chamber 13 is connected to each of a plurality of film forming apparatuses 11 and mask stock apparatuses 12, as shown in FIG.

A transfer robot 14 for transferring substrates and masks is arranged in the transfer chamber 13 . The transport robot 14 transports the substrate W from the pass chamber 15 of the relay device arranged on the upstream side to the film forming device 11 . Further, the transport robot 14 transports the mask between the film forming device 11 and the mask stock device 12 . The transport robot 14 is, for example, a robot having a structure in which a robot hand holding a substrate W or a mask is attached to an articulated arm.

In the film forming apparatus 11 (also referred to as a vapor deposition apparatus), a vapor deposition material contained in an evaporation source is heated by a heater to evaporate, and is vapor deposited onto a substrate through a mask. A series of film formation processes, such as delivery of the substrate W to and from the transfer robot 14, adjustment of the relative position of the substrate W and the mask (alignment), fixing of the substrate W on the mask, film formation (evaporation), etc., are carried out by the film formation apparatus 11. done by

In the mask stock device 12, new masks to be used in the film forming process in the film forming device 11 and used masks are stored separately in two cassettes. The transport robot 14 transports the used mask from the film forming apparatus 11 to the cassette of the mask stocking apparatus 12 , and transports the new mask stored in another cassette of the mask stocking apparatus 12 to the film forming apparatus 11 .

The cluster device 1 includes a pass chamber 15 for transferring the substrates W from the upstream side to the cluster device 1 in the flow direction of the substrates W, and a pass chamber 15 for transferring the substrates W completed the film forming process in the cluster device 1 to the other downstream side. A buffer chamber 16 is connected for transport to the cluster device. The transport robot 14 in the transport chamber 13 receives the substrate W from the pass chamber 15 on the upstream side and transports it to one of the film forming apparatuses 11 (for example, the film forming apparatus 11a) within the cluster apparatus 1 . Further, the transport robot 14 receives the substrate W for which the film forming process in the cluster apparatus 1 has been completed from one of the plurality of film forming apparatuses 11 (for example, the film forming apparatus 11b), and transfers the substrate W to the buffer connected downstream. Transfer to chamber 16 .

Between the buffer chamber 16 and the pass chamber 15, a swirling chamber 17 for changing the orientation of the substrate is installed. The swirl chamber 17 is provided with a transport robot 18 for receiving the substrate W from the buffer chamber 16 , rotating the substrate W by 180°, and transporting it to the pass chamber 15 . As a result, the orientation of the substrate W becomes the same between the upstream cluster device and the downstream cluster device, thereby facilitating substrate processing.

The pass chamber 15, the buffer chamber 16, and the swirl chamber 17 are so-called relay devices that connect the cluster devices. At least one of the swirl chambers.

The film forming device 11, the mask stock device 12, the transfer chamber 13, the buffer chamber 16, the swirling chamber 17, and the like are maintained in a high vacuum state during the manufacturing process of the organic light emitting device. The pass chamber 15 is normally maintained in a low vacuum state, but may be maintained in a high vacuum state if necessary.

In this embodiment, the configuration of the electronic device manufacturing apparatus has been described with reference to FIG. or the arrangement between the chambers may be changed. For example, the electronic device manufacturing apparatus according to the embodiment of the present invention may be of an in-line type instead of the cluster type shown in FIG. In other words, the substrate and the mask may be mounted on a carrier, and film formation may be performed while being transported in a plurality of film formation apparatuses arranged in a row. Also, it may have a structure of a combination of a cluster type and an in-line type. For example, a cluster-type manufacturing apparatus may be used for forming the organic layer, and an in-line type manufacturing apparatus may be used for the film-forming process of the electrode layer (cathode layer), the sealing process, the cutting process, and the like.

A specific configuration of the film forming apparatus 11 will be described below.

<Deposition equipment>
FIG. 2 is a schematic diagram showing the configuration of the film forming apparatus 11 according to one embodiment of the present invention.

The film forming apparatus 11 heats the film forming material of the film forming source to evaporate or sublime, and forms a film on the substrate W through the mask M. FIG. The adjustment (alignment) of the relative positions of the substrate W and the mask M is performed by aligning them by driving the stage. A series of film formation processes from alignment to film formation are performed in a vacuum deposition apparatus.

The film forming apparatus 11 comprises a vacuum chamber 21 maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas. A fine movement stage mechanism 22 for adjusting the position of the substrate W, a substrate adsorption means 24 for adsorbing and holding the substrate W, a mask table 23 for supporting the mask M, a coarse motion stage 232 for adjusting the position of the mask M, and a film formation. It includes a deposition source 25 that heats and releases material.

The film forming apparatus 11 according to one embodiment of the present invention can further include magnetic force application means 26 for bringing the metal mask M into close contact with the substrate W side by magnetic force.

By connecting a vacuum pump P to the vacuum chamber 21 of the film forming apparatus 11 according to one embodiment of the present invention, the internal space of the vacuum chamber 21 can be maintained in a high vacuum state.

The fine movement stage mechanism 22 is a stage mechanism for adjusting the position of the substrate W or the substrate attracting means 24, and enables the relative position of the substrate W with respect to the mask M to be below a threshold value. The fine movement stage mechanism 22 includes a reference plate portion 221 (first plate portion) functioning as a support structure and a fine movement stage plate portion 222 (second plate portion) functioning as a movable table.

The fine movement stage mechanism 22 can be configured as a magnetic levitation stage mechanism driven by a magnetic levitation linear motor in order to adjust the position of the substrate W or the substrate attracting means 24 with high precision. That is, for example, a coil through which a current flows is installed in the reference plate portion 221 as a stator, and a permanent magnet is installed as a mover in the area of the fine movement stage plate portion 222 corresponding to this. By moving the fine movement stage plate portion 222 in a state of being magnetically levitated, the position of the substrate chucking means 24 mounted on one main surface (for example, the lower surface) of the fine movement stage plate portion 222 and the substrate W chucked thereon can be changed. It can be adjusted with high precision. The fine movement stage mechanism 22 includes position measuring means for measuring the position of the fine movement stage plate section 222 , self-weight compensation means for compensating for the gravity acting on the fine movement stage plate section 222 , and the origin position of the fine movement stage plate section 222 . Origin positioning means or the like for determining may also be included.

The mask stand 23 is a support structure for setting and fixing the mask M, and is set on the coarse movement stage 232 . Thereby, the relative position of the mask M to the substrate W and the vertical spacing can be adjusted.

The mask M has an opening pattern corresponding to the thin film pattern formed on the substrate W, and is supported by the mask table 23 . For example, the mask M used to manufacture an organic EL display panel for VR HMD is a fine metal mask, which is a metal mask in which a fine opening pattern corresponding to the RGB pixel pattern of the light emitting layer of the organic EL element is formed. (Fine Metal Mask) and an open mask used to form common layers (hole injection layer, hole transport layer, electron transport layer, electron injection layer, etc.) of the organic EL device. The pattern of openings in mask M is defined by a blocking pattern that does not allow the passage of particles of deposition material. Also, the mask M may be manufactured using silicon as a material.

The substrate adsorption means 24 is a means for adsorbing and holding a substrate W as a film-forming object carried into the apparatus. The substrate adsorption means 24 is installed on the fine movement stage plate portion 222 which is the movable base of the fine movement stage mechanism 22 . The substrate chucking means 24 is, for example, an electrostatic chuck having a structure in which electric circuits such as metal electrodes are embedded in a dielectric or insulator (eg, ceramic material) matrix. The electrostatic chuck as the substrate attracting means 24 has a dielectric material having a relatively high resistance interposed between the electrode and the attracting surface, and the Coulomb force that attracts the object by the Coulomb force between the electrode and the object to be attracted. type electrostatic chuck, or a dielectric having a relatively low resistance is interposed between the electrode and the chucking surface, and the Johnson chucking occurs between the chucking surface of the dielectric and the object to be chucked. It may be a Johnson-Rahbek force type electrostatic chuck in which attraction is performed by a Rabeck force, or a gradient force type electrostatic chuck in which an object to be attracted is attracted by a non-uniform electric field. When the object to be adsorbed is a conductor or semiconductor (silicon wafer), it is preferable to use a Coulomb force type electrostatic chuck or a Johnson-Rahbek force type electrostatic chuck, and the object to be adsorbed is an insulator such as glass. , it is preferable to use a gradient force type electrostatic chuck.

The film forming source 25 includes a crucible (not shown) containing a film forming material to be formed on the substrate W, a heater (not shown) for heating the crucible, and the like. The deposition source 25 can have a variety of configurations depending on the application, such as a point deposition source or a linear deposition source.

The magnetic force applying means 26 is a means for attracting the metal mask M to the substrate W side by magnetic force during film formation, and is installed so as to be vertically movable. For example, the magnetic force applying means 26 is composed of an electromagnet or a permanent magnet. An elevating mechanism 27 for elevating the magnetic force applying means 26 is installed on the upper outer side (atmosphere side) of the vacuum chamber 21 . When the deposition position where the substrate W and the mask M are in contact is reached, the magnetic force applying means 26 is lowered to draw the mask M over the electrostatic chuck 24 and the substrate W, thereby bringing the substrate W and the mask M into close contact. Here, if the mask M is made of silicon instead of metal, the magnetic force application means 26 becomes unnecessary.

The deposition apparatus 11 is provided with a deposition-inhibiting member 30 inside the vacuum chamber 21 . The deposition-inhibiting member 30 prevents the film-forming material that scatters in a direction other than the mask M, among the film-forming materials discharged from the film-forming source 25, from adhering to parts other than the substrate W of the film-forming apparatus 11. To prevent. This deposition-inhibiting member 30 is made of a plate material made of metal such as stainless steel or aluminum. It is structured such that it can be detached and carried out to the outside of the vacuum chamber 21 . A plurality of deposition-inhibiting members 30 can be provided so as to effectively cover different areas inside the vacuum chamber 21 . A detailed arrangement structure of the deposition-inhibiting member 30 according to the embodiment of the present invention will be described later.

In the above description, the film forming apparatus 11 has a configuration of a so-called upward vapor deposition system (depot-up) in which film formation is performed with the film forming surface of the substrate W facing downward in the vertical direction. Not limited. The substrate W may be placed vertically on the side surface of the vacuum chamber 21, and the film formation may be performed with the film formation surface of the substrate W parallel to the direction of gravity. Also, as a configuration for adjusting (aligning) the relative position of the substrate W with respect to the mask M, an example has been described in which the substrate W is moved by the magnetic levitation stage mechanism while being attracted to an electrostatic chuck, which is a substrate attracting means. Alternatively, the substrate and the mask may be placed on supports that support their outer peripheries and moved by a mechanical stage mechanism composed of mechanical motors, ball screws, linear guides, and the like.

<Deposition process>
A film forming method using the film forming apparatus according to this embodiment will be described below.

The substrate W is carried into the vacuum chamber 21 while the mask M is supported on the mask table 23 inside the vacuum chamber 21 . After the carried-in substrate W is sufficiently close to or in contact with the substrate attracting means 24, the substrate attracting voltage is applied to the substrate attracting means 24 to attract the substrate W. As shown in FIG. Alignment of the substrate W and the mask M is performed by driving the fine movement stage mechanism 22 and the coarse movement stage 232 . When the amount of relative positional deviation between the substrate W and the mask M becomes smaller than a predetermined threshold value, the magnetic force applying means 26 is lowered to bring the substrate W and the mask M into close contact with each other. do. After the film is formed to a desired thickness, the magnetic force applying means 26 is lifted to separate the mask M and the substrate W is unloaded.

<Anti-adhesion member layout structure>
FIG. 3 is a schematic cross-sectional view of a film forming apparatus, showing the arrangement structure of the deposition-inhibiting member 30 according to one embodiment of the present invention.

In FIG. 3, a film forming source 25 is provided on the bottom surface of the vacuum chamber 21 . The film forming source 25 has an ejection hole for the film forming material, and the surface of the substrate W and the mask M on which the film is to be formed faces the ejection hole. The mask M is provided with patterned holes through which the film-forming material passes at desired locations, and the film-forming material discharged from the film-forming source 25 adheres to the substrate W in a desired pattern through the mask M. becomes possible.

In order to discharge the film forming material from the film forming source 25, the inside of the crucible 25a in the film forming source 25 is heated to a high temperature of, for example, 500.degree.

Further, inside the vacuum chamber 21 , an anti-adhesion member 30 is installed adjacent to the wall of the vacuum chamber 21 so as to surround the film formation source 25 . As a result, the film-forming material discharged from the film-forming source 25 and scattered in a direction other than the mask M adheres to the deposition-inhibiting member 30 .

The deposition-inhibiting member 30 is usually made of a plate material made of metal such as stainless steel or aluminum. As described above, the deposition-inhibiting member 30 receives radiant heat from the film-forming source 25 during film formation, and its temperature rises. This may cause the alignment accuracy of the mask M to drop.

According to the present invention, first, the arrangement angle of the deposition-inhibiting member 30 is optimized to suppress the change in the relative position between the substrate W and the mask M due to the deposition-inhibiting member 30 serving as a radiant heat source. More specifically, the deposition-inhibiting member 30 is installed at an angle capable of minimizing the view factor with respect to the mask M, which is the object to be irradiated. Here, the view factor means the area of the radiant heat source as viewed from the body to be radiated, and the smaller the view factor, the less the influence of the same radiant heat source.

According to the embodiment of the present invention, the deposition-inhibiting member 30 is installed at an angle with respect to the wall surface of the vacuum chamber 21 . More specifically, for example, when the deposition-inhibiting member 30 is arranged between the film-forming source 25 and the mask M, the deposition-inhibiting member 30 extends along the wall surface of the vacuum chamber 21 in the direction normal to the film-forming surface of the substrate. is inclined so that the center side end inside the vacuum chamber 21 is closer to the mask M than the end (wall side end) connected to the wall side end and the center side end. A straight extension line is installed so as to face the center of the mask M roughly. As a result, the area of the deposition-inhibitory member 30 viewed from the mask M is reduced, and the view factor from the deposition-inhibitory member 30 to the substrate W and the mask M is suppressed, thereby extending from the deposition-inhibitory member 30 to the substrate W and the mask M. It is possible to suppress the amount of radiant heat generated. Therefore, it is possible to prevent the alignment accuracy between the substrate W and the mask M from deteriorating.

According to such an embodiment of the present invention, the arrangement angle of the deposition-inhibitory member 30 varies depending on the relative position with respect to the mask M. FIG. Specifically, when the deposition-inhibiting member 30 has a plurality of deposition-inhibiting members 31 to 34 having different relative positions (vertical distances in the case of FIG. 3) with respect to the mask M, each of the deposition-inhibiting members 31 to The angles (θ1, θ2, θ3, θ4 in FIG. 3) formed by the surface facing the film formation source of 34 and the normal to the film formation surface of the substrate are from the mask M in the direction normal to the film formation surface of the substrate. becomes smaller as the distance of .theta.1>.theta.2>.theta.3>.theta.4.

According to one aspect of this embodiment, the surface of the deposition-inhibiting member 30 may be formed of a material and/or structure capable of reducing emissivity. More specifically, the anti-adhesion member 30 is formed of a plate material made of metal such as stainless steel or aluminum. rate can be reduced. If necessary, the emissivity can be further reduced by applying nickel plating and polishing to a mirror finish. As a result, the radiant heat effect of outside air passing through the wall surface of the vacuum chamber 21 can be reduced.

Similarly to the outer surface 30a, the inner surface 30b of the anti-adhesion member 30 facing the film forming source 25 is also formed as a nickel-plated layer, and if necessary, mirror-finished to reduce the emissivity. be able to. As a result, the temperature rise of the deposition-inhibiting member 30 due to receiving radiant heat from the film forming source 25 can be suppressed.

In addition, according to another aspect of the present embodiment, when the outside air is lower than the assumed temperature of the deposition-inhibiting member 30, the deposition-inhibiting member 30 temperature rise can be suppressed. In that case, it is effective to improve the emissivity by applying a DLC (diamond-like carbon) film to the outer surface 30a of the deposition-inhibitory member 30. FIG. As a method for increasing the emissivity of the outer surface 30a, in addition to the above-described DLC film treatment, a surface roughening treatment, a black surface treatment, or the like can be applied. Examples of such surface treatments include blasting, black plating, oxide film formation, and thermal spraying.

<Method for manufacturing electronic device>
Next, an example of a method for manufacturing an electronic device using the film forming apparatus of this embodiment will be described. The configuration and manufacturing method of an organic EL display device will be exemplified below as an example of an electronic device.

First, the organic EL display device to be manufactured will be described. FIG. 4A shows an overall view of the organic EL display device 60, and FIG. 4B shows a cross-sectional structure of one pixel.

As shown in FIG. 4A, in a display region 61 of an organic EL display device 60, a plurality of pixels 62 each having a plurality of light emitting elements are arranged in a matrix. Although details will be described later, each of the light emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. The term "pixel" as used herein refers to a minimum unit capable of displaying a desired color in the display area 61. FIG. In the case of the organic EL display device according to this embodiment, the pixel 62 is configured by a combination of the first light-emitting element 62R, the second light-emitting element 62G, and the third light-emitting element 62B that emit light different from each other. The pixel 62 is often composed of a combination of a red light emitting element, a green light emitting element and a blue light emitting element, but may be a combination of a yellow light emitting element, a cyan light emitting element and a white light emitting element. It is not limited.

FIG. 4(b) is a schematic partial cross-sectional view taken along line AB in FIG. 4(a). The pixel 62 has an organic EL element provided on a substrate 63 with an anode 64, a hole transport layer 65, one of the light emitting layers 66R, 66G, 66B, an electron transport layer 67, and a cathode 68. there is Among these layers, the hole transport layer 65, the light emitting layers 66R, 66G and 66B, and the electron transport layer 67 correspond to organic layers. In this embodiment, the light emitting layer 66R is an organic EL layer that emits red, the light emitting layer 66G is an organic EL layer that emits green, and the light emitting layer 66B is an organic EL layer that emits blue. The light-emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light-emitting elements (also referred to as organic EL elements) that emit red, green, and blue, respectively. Also, the anode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the cathode 68 may be formed in common with the plurality of light emitting elements 62R, 62G, and 62B, or may be formed for each light emitting element. An insulating layer 69 is provided between the anodes 64 to prevent the anodes 64 and cathodes 68 from being short-circuited by foreign matter. Furthermore, since the organic EL layer is deteriorated by moisture and oxygen, a protective layer 70 is provided to protect the organic EL element from moisture and oxygen.

In FIG. 4B, the hole transport layer 65 and the electron transport layer 67 are shown as one layer, but depending on the structure of the organic EL display element, they may be formed of multiple layers including a hole blocking layer and an electron blocking layer. may be In addition, a hole injection layer having an energy band structure capable of smoothly injecting holes from the anode 64 to the hole transport layer 65 is provided between the anode 64 and the hole transport layer 65 . can also be formed. Similarly, an electron injection layer can be formed between cathode 68 and electron transport layer 67 .

Next, an example of a method for manufacturing an organic EL display device will be specifically described.

First, a substrate 63 on which a circuit (not shown) for driving an organic EL display device and an anode 64 are formed is prepared.

An acrylic resin is formed by spin coating on the substrate 63 on which the anode 64 is formed, and the acrylic resin is patterned by lithography so that an opening is formed in the portion where the anode 64 is formed, thereby forming an insulating layer 69 . . This opening corresponds to a light emitting region where the light emitting element actually emits light.

The substrate 63 on which the insulating layer 69 is patterned is carried into the first organic material deposition apparatus, the substrate is held by an electrostatic chuck, and the hole transport layer 65 is formed as a common layer on the anode 64 in the display area. It forms a film as The hole transport layer 65 is deposited by vacuum deposition. Since the hole transport layer 65 is actually formed to have a size larger than that of the display area 61, a high-definition mask is not required.

Next, the substrate 63 on which the holes up to the hole transport layer 65 are formed is carried into the second organic material film forming apparatus and held by an electrostatic chuck. After the substrate and the mask are aligned and the mask is attracted to the substrate by a magnet plate, a light-emitting layer 66R emitting red is formed on the portion of the substrate 63 where the elements emitting red are to be arranged.

Similarly to the deposition of the light-emitting layer 66R, the third organic material deposition apparatus is used to deposit a green-emitting light-emitting layer 66G, and the fourth organic material deposition apparatus is used to deposit a blue-emitting light-emitting layer 66B. . After the formation of the light-emitting layers 66R, 66G, and 66B is completed, the electron transport layer 67 is formed over the entire display area 61 by the fifth film forming apparatus. The electron transport layer 67 is formed as a layer common to the three color light-emitting layers 66R, 66G, and 66B.

The substrate on which the electron transport layer 67 has been formed is moved by the metallic vapor deposition material film-forming apparatus to form the cathode 68 .

After that, the substrate is moved to a plasma CVD apparatus to form a protective layer 70, and the organic EL display device 60 is completed.

If the substrate 63 on which the insulating layer 69 is patterned is carried into the film forming apparatus and is exposed to an atmosphere containing moisture and oxygen until the film formation of the protective layer 70 is completed, the light emitting layer made of the organic EL material will be damaged. It may deteriorate due to moisture and oxygen. Therefore, in this example, substrates are carried in and out between film forming apparatuses under a vacuum atmosphere or an inert gas atmosphere.

The above-described embodiment merely shows an example of the present invention, and the present invention is not limited to the configuration of the above-described embodiment, and may be appropriately modified within the scope of the technical idea thereof.

11: Film forming apparatus, 21: Vacuum chamber, 25: Film forming source, 30, 31, 32, 33, 34: Anti-adhesion member

Claims (9)

A film forming apparatus for forming a film on a substrate through a mask with a film forming material discharged from a film forming source in a chamber,
Having a plurality of deposition-inhibiting members arranged in the chamber and to which film-forming material scattered from the film-forming source adheres,
In the plurality of deposition-inhibiting members, an angle between a surface of the deposition-inhibiting member facing the film formation source and a normal line to the film formation surface of the substrate is determined according to a distance from the mask in the direction of the normal line. different from each other, and the angle between the facing surface and the normal line is smaller for a deposition-inhibiting member that is farther from the mask in the direction of the normal line. The plurality of adhesion-inhibiting members includes a first adhesion-inhibiting member and a second adhesion-inhibiting member,
The first adhesion-inhibiting member and the second adhesion-inhibiting member are separate bodies, and are respectively provided at different locations on the wall surface side of the same side of the chamber and a center side end inside the chamber. and
The first deposition-inhibiting member and the second deposition-inhibiting member are arranged in the chamber such that the central side edge is closer to the mask than the wall side edge in the normal direction of the film formation surface of the substrate. Installed at an angle to the wall,
the distance between the second deposition-inhibiting member and the mask is greater than the distance between the first deposition-inhibiting member and the mask;
A first angle between a first opposing surface of the first deposition prevention member facing the film formation source and a normal line of the film formation surface of the substrate is the angle of the second adhesion prevention member facing the film formation source. 2. The film forming apparatus according to claim 1, wherein the second angle is larger than the second angle between the second opposing surface and the normal line. A film forming apparatus for forming a film on a substrate through a mask with a film forming material discharged from a film forming source in a chamber,
a first deposition-inhibiting member disposed in the chamber to which the film-forming material scattered from the film-forming source adheres;
a second deposition-inhibiting member disposed in the chamber, having a distance from the mask that is greater than the distance between the first deposition-inhibiting member and the mask, and to which the film-forming material scattered from the film-forming source adheres; prepared,
A first angle between the first opposing surface of the first deposition-inhibiting member facing the film formation source and a normal to the film formation surface of the substrate is the angle of the second adhesion-inhibition member facing the film formation source. A film forming apparatus, wherein the angle between the second opposing surface and the normal line is larger than a second angle. Further provided is a third deposition-inhibiting member disposed in the chamber, having a distance from the mask greater than the distance between the second deposition-inhibiting member and the mask, to which the film-forming material scattered from the film-forming source adheres. death,
4. The film formation according to claim 3, wherein a third angle between a third opposing surface of said third deposition-inhibiting member facing said film formation source and said normal line is smaller than said second angle. Device. 5. The film forming apparatus according to claim 2 , wherein a surface of said first deposition-inhibiting member facing said film forming source is mirror-finished. A film forming apparatus for forming a film on a substrate through a mask with a film forming material discharged from a film forming source in a chamber,
a deposition-inhibiting member disposed in the chamber to which the film-forming material scattered from the film-forming source adheres;
The deposition-inhibiting member is arranged on the wall surface of the chamber so that the center side end portion inside the chamber is closer to the mask than the end portion connected to the wall surface of the chamber in the normal direction of the film formation surface of the substrate. , and a straight extension line connecting the end connected to the wall surface and the center side end is installed so as to pass through the center of the mask. membrane device. The plurality of deposition-preventing members arranged in the chamber are configured such that an angle between a surface of the deposition-preventing members facing the film formation source and a normal to the film formation surface of the substrate is in the direction of the normal. depending on the distance from said mask,
7. The film forming apparatus according to claim 6, wherein a surface of said deposition-inhibiting member facing said film forming source is mirror-finished. 8. A film forming method, comprising: using the film forming apparatus according to any one of claims 1 to 7, to form a film of a film forming material on a substrate through a mask inside a chamber of the film forming apparatus. . A method for manufacturing an electronic device, comprising manufacturing an electronic device using the film forming method according to claim 8 .

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