JP2010165571A - Apparatus for manufacturing organic el device, film-forming apparatus, and film-forming method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide: an apparatus for manufacturing organic EL devices and a film-forming apparatus, which perform vapor deposition with high accuracy by reducing the effect of shadow mask warpage, methods of manufacturing these apparatuses, and a method of forming films; or to provide an apparatus for manufacturing organic EL devices and a film-forming apparatus with high productivity by arranging a driving section in the atmosphere side or arranging wiring to reduce dust and gases generated in vacuum. <P>SOLUTION: In the present invention, in which a substrate and a shadow mask are aligned in a vacuum chamber, there are provided: a substrate holder that retains the substrate so as to keep it erected when a material in a vapor deposition source is vapor-deposited on the substrate; and a shadow mask holder that retains the shadow mask so that it faces the standing substrate, thereby reducing the effect of the shadow mask warpage during vapor deposition. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a film forming apparatus and a film forming method including an organic EL device manufacturing apparatus, and more particularly to a film forming apparatus and a film forming method suitable for alignment of a large substrate.

  There exists a vacuum evaporation method as an influential method of manufacturing an organic EL device. In vacuum deposition, alignment between the substrate and the mask is necessary. As the size of the processing substrate increases, the size of the G6 generation substrate becomes 1500 mm × 1800 mm. Naturally, when the substrate size is increased, the mask is also increased in size, and the dimension reaches about 2000 mm × 2000 mm. In particular, when a steel mask is used, an organic EL device has a weight of 300 kg. Conventionally, alignment is performed with the substrate and the mask horizontal. As such conventional techniques, there are the following Patent Documents 1 and 2. As for alignment correction, Japanese Patent Application Laid-Open No. H10-228667 discloses a method of performing alignment by taking into account the difference between the alignment detection amount and the actual correction amount in horizontal alignment.

JP 2006-302896 A JP 2008-004358 A

  However, in the method disclosed in Patent Documents 1 and 2, the substrate and the mask are aligned side by side, the substrate and the mask are greatly bent due to their thinness and weight. If the deflection is uniform, it is sufficient to manufacture the mask in consideration of this, but naturally it becomes difficult to manufacture when the center becomes larger and the substrate size becomes larger. In general, the amount of deflection at the center point is d1> d2, where d1 is the substrate deflection and d2 is the mask deflection. If the substrate deflection is large, the substrate deposition surface comes into contact with the mask and contact scratches occur, so that the substrate cannot be brought into close contact. For this reason, there is a problem that if the alignment is performed with a distance greater than the depth of field, the accuracy is poor and the product becomes defective. In particular, a high-definition screen cannot be obtained with a display device substrate.

  In order to cope with this problem, there is a method of vapor deposition with the substrate and the mask substantially vertical. By making it vertical, the deflection of the substrate and shadow mask can be greatly reduced by the weight of the substrate and the shadow mask. However, the mask portion of the shadow mask is as thin as 20 to 50 μm, and when manufactured, the entire mask is warped from the center to the periphery as shown in FIG. 7, and the influence is large at the end of the mask portion. FIG. 7 shows the state exaggeratedly, and there is a problem that a gap of several tens of μm is formed between the substrate and the shadow mask, and the gap causes a vapor deposition blur, and the vapor deposition cannot be performed with high accuracy. I understood.

  In addition, in the method disclosed in Patent Document 1, since the entire mechanism for aligning the substrate and the mask is installed in a vacuum, dust and heat accompanying the movement of the drive unit or the like is generated, or the drive unit or the like is generated. Gas from the wiring may reduce the degree of vacuum. The dust in the first vacuum adheres to the substrate and the mask and causes deposition failure, the second heat generation promotes thermal expansion with the mask and changes the deposition size, and the third gas increases the degree of vacuum. Therefore, there is a problem that the yield rate, that is, the productivity is lowered.

Accordingly, a first object of the present invention is to provide an organic EL device manufacturing apparatus, a film forming apparatus, and a film forming method thereof which can reduce the influence of warpage of a shadow mask and can be deposited with high accuracy.
In addition, the second object of the present invention is to reduce the generation of dust and gas in vacuum by disposing a drive unit or the like on the atmosphere side or laying wiring, and to produce a highly productive organic EL device manufacturing apparatus and film formation Is to provide a device.

  In order to achieve the first object described above, in a film forming apparatus comprising alignment means for aligning a substrate and a shadow mask in a vacuum chamber, and a vacuum deposition chamber for depositing a deposition material in an evaporation source on the substrate, A substrate holder for placing the substrate and holding it in a standing posture, a shadow mask holding means for holding the shadow mask so as to face the substrate in the standing posture, and reducing the influence of warping of the shadow mask The first feature is to have a correcting means.

In order to achieve the first object, in addition to the first feature, the correction means includes a substrate holder for holding the substrate or a pressing means for pressing the shadow mask. Further, in order to achieve the first object, in addition to the second feature, the correcting means includes a measuring means for measuring a distance between the substrate holder and the shadow mask. A third feature is to control the pressing means based on the result or based on a predetermined correction amount.

In order to achieve the first object, in addition to the second feature, the pressing position at which the pressing means presses the substrate holder is the outer periphery of the end vapor deposition portion of the substrate, or A fourth feature is that the pressing position at which the pressing means presses the shadow mask is a position corresponding to the outer periphery of the end vapor deposition portion of the substrate.
Furthermore, in order to achieve the first object, in addition to the fourth feature, the fifth feature is that the pressing positions are four locations provided near the four corners of the substrate holder or the shadow mask. Deposition device.

Further, in order to achieve the first object, in the film forming method for aligning the substrate and the shadow mask in the vacuum chamber and depositing the vapor deposition material on the substrate, the correction for correcting the warp of the shadow mask is performed. It has the 6th characteristic to have a process.
Furthermore, in order to achieve the first object, in addition to the sixth feature, the correction step is a step performed by pressing the substrate holder holding the substrate or the shadow mask. And

In order to achieve the first object, in addition to the sixth feature, an eighth feature is that the correction step is performed before or after alignment.
Furthermore, in order to achieve the first object, in addition to any of the sixth to eighth features, a ninth feature is that a step of bringing the entire substrate into close contact with the shadow mask after alignment is performed. .

In order to achieve the second object, in addition to the second feature, the correction means is provided in a hollow case, and has a hollow connection portion having one end opened to the hollow case and the other end opened to the atmosphere. A tenth feature is that wiring necessary for the correcting means is laid through the connecting portion.
Furthermore, in order to achieve the first object, in addition to the first feature, there is provided a substrate turning means for bringing the substrate holding means and the correction means upright from a horizontal state. 11 features.

  Finally, in order to achieve the first object, in addition to the eleventh feature, the substrate turning means is a twelfth feature that turns the connecting portion.

ADVANTAGE OF THE INVENTION According to this invention, the influence of the curvature of a shadow mask can be reduced, and the organic EL device manufacturing apparatus, film-forming apparatus, those manufacturing method, and film-forming method which can be deposited with high precision can be provided.
In addition, according to the present invention, an organic EL device manufacturing apparatus and a film forming apparatus with high productivity can be obtained by reducing the generation of dust and gas in a vacuum by arranging a drive unit or the like on the atmosphere side or laying wiring. Can be provided.

  An embodiment of the invention will be described with reference to FIGS. Organic EL device manufacturing equipment is not simply a structure in which a light emitting material layer (EL layer) is formed and sandwiched between electrodes, but a hole injection layer or transport layer on the anode, and an electron injection layer or transport layer on the cathode. A multilayer structure in which various materials are formed as a thin film is formed, and a substrate is cleaned. FIG. 1 shows an example of the manufacturing apparatus.

  The organic EL device manufacturing apparatus 100 according to the present embodiment is roughly divided into a load cluster 3 that carries a substrate 6 to be processed, four clusters (A to D) that process the substrate 6, between each cluster, or between the cluster and the load cluster 3. Or it is comprised from the six delivery chambers 4 installed between the following processes (sealing process). In this embodiment, the substrate is transported with the deposition surface of the substrate as the upper surface, and the substrate is erected and deposited when vapor deposition is performed.

  The load cluster 3 receives a substrate 6 (hereinafter simply referred to as a substrate) from the load lock chamber 31 having the gate valve 10 and the load lock chamber 31 in order to maintain a vacuum in the front-rear direction, and rotates to receive the substrate 6 in the delivery chamber 4a. Is composed of a transfer robot 5R. Each load lock chamber 31 and each delivery chamber 4 have a gate valve 10 in the front and rear, and deliver the substrate to the load cluster 3 or the next cluster or the like while maintaining the vacuum by controlling the opening and closing of the gate valve 10.

  Each cluster (A to D) includes a transfer chamber 2 having a single transfer robot 5 and two processing chambers 1 (first) arranged on the top and bottom of the drawing for receiving a substrate from the transfer robot 5 and performing a predetermined process. 1 subscripts a to d indicate clusters, and second subscripts u and d indicate upper and lower sides). A gate valve 10 is provided between the transfer chamber 2 and the processing chamber 1.

FIG. 2 shows an outline of the configuration of the transfer chamber 2 and the processing chamber 1. Although the configuration of the processing chamber 1 varies depending on the processing content, a vacuum deposition chamber 1bu in which a light emitting material as a deposition material is deposited in vacuum to form an EL layer will be described as an example. FIG. 3 is a schematic diagram and an operation explanatory diagram of the configuration of the transfer chamber 2b and the vacuum deposition chamber 1bu at that time. The transfer robot 5 in FIG. 2 has a three-link structure arm 57 that can move up and down as a whole (see arrow 59 in FIG. 3) and can turn left and right. Two hands 58 are provided in two upper and lower stages. In the case of a single hand, a rotation operation for transferring the substrate to the next process, a rotation operation for receiving the substrate from the previous process, and an accompanying gate valve opening / closing operation are necessary during the loading / unloading process. By making the upper and lower two stages, the substrate to be carried into one hand is held, the substrate is carried out from the vacuum deposition chamber with the other hand not holding the substrate, and then the carrying-in operation is continuously performed. be able to.
Whether to use two hands or one hand depends on the required production capacity. In the following description, a single hand is used for the sake of simplicity.

  On the other hand, the vacuum deposition chamber 1bu is roughly divided into a vapor deposition unit 7 for sublimating a luminescent material and depositing it on the substrate 6, an alignment unit 8 for aligning the substrate 6 and the shadow mask, and depositing on a necessary part of the substrate 6, And the transfer robot 5 and the processing delivery unit 9 that transfers the substrate to the vapor deposition unit 7. The alignment unit 8 and the processing delivery unit 9 are provided in two systems, a right R line and a left L line.

  Therefore, the basic idea of processing in this embodiment is that while one line (for example, R line) is deposited, the substrate is carried in and out on the other L line, and the alignment between the substrate 6 and the shadow mask 81 is performed. And complete the preparation for vapor deposition. By alternately performing this process, it is possible to reduce the time during which sublimation is wasted without being deposited on the substrate.

In this embodiment, as shown in FIG. 4, even if the substrate size is large, first, (1) the substrate is carried into the processing delivery section 9 so that the gap between the substrate and the shadow mask can be deposited in the order of 1 μm. Then, (2) the substrate is erected almost vertically, then (3) the substrate 6 is brought close to the shadow mask 81 at a certain distance, for example, 0.5 mm, and (4) the shadow mask is warped. (5) Alignment is performed in that state. After the alignment, (6) the substrate 6 and the shadow mask 81 are brought into close contact with each other, and (7) a vapor deposition material is vapor-deposited on the substrate.
After the deposition, (8) the substrate 6 is separated from the shadow mask 81 by a certain distance, (9) the correction of (4) is canceled, (10) the substrate and others are leveled, and (11) the substrate is transferred to the processing delivery section 9. In the above step, step (4) was performed before alignment in (5), but it may be performed after alignment or after step (6), and step (9) is performed in (8). Although implemented later, it may be implemented before (8).

  Therefore, the configuration and operation for realizing the steps (2) to (6) and (8) to (10) in the steps of the present embodiment will be described in order. FIG. 5 shows the substrate turning means 92 that realizes (2) and (10), the substrate contact means 93 that realizes (3), (6), and (8), and (4) and (9) among the above steps. FIG. 4 shows the processing delivery section 9 shown in FIG. 3 having the substrate end close contact means 94, and also shows the application of the in-vacuum wiring mechanism for solving the problem of outgas from the coating material of the wiring.

  First, the substrate turning means 92 for realizing (2) and (10) will be described with reference to FIG. The substrate turning means 92 is formed by integrating a substrate holder 91 for placing and holding the substrate 6 carried into the processing delivery section 9, the substrate 6, and a substrate end close contact means 94, which will be described later, into a substantially vertical position before alignment. , It has a function of returning to the horizontal state after the alignment. The fixing means is constituted by electrostatic adsorption or mechanical clamp in consideration of being in a vacuum.

  In FIG. 5, the substrate turning means 92 is roughly divided into an in-vacuum wiring link mechanism 92L for turning the turning target such as the substrate 6 to be turned, the substrate end close contact means 94 and the substrate holder, and the swirling object by the arrow A. And a turning drive unit 92B that is driven to turn in the direction through the mechanism.

  The in-vacuum wiring link mechanism 92L includes a first link 92L1 and a second link 92L2, and a seal portion 92S that isolates them from the vacuum side and maintains the inside in an air atmosphere. One end of the first link 92L1 is supported by the rotation support base 92k, and the other end is connected so as to have a hollow portion in a substrate end close contact means 94 described later. The second link 92L2 is provided on the side opposite to the first link 92L1 with respect to the substrate end close contact means 94, and one end of the second link 92L2 is connected to the substrate end close contact means 94 like the first link 92L1. The other end is connected to a support portion 11A provided in the partition portion 11 shown in FIG. The seal portion 92S has one end connected to the connection portion of the substrate end close contact means and the other end connected to the side wall of the vacuum deposition chamber 1bu, the first seal portion 92S1 connected to the support portion 11A, and the second seal portion 92S2. Consists of. Each of the seal portions 92S1 and 92S2 has bellows 92Sv1 and 92Sv2 connecting the both ends, and the connection portion of each seal portion 92S1 and 92S2 on the substrate end close contact means 94 side is a first link 92L1. The second link 92L2 is rotatably supported.

  In the above embodiment, the inside of the link is made hollow in order to lay the wiring 94f in the link. However, since the seal portion 92S is configured to include each link, the wiring is provided between the link and the vacuum seal portion. May be laid. In this case, the link is not necessarily hollow.

On the other hand, the turning drive unit 92B has a turning motor 92m provided on the atmosphere side, gears 92h ₁ and 92h ₂ that transmit the turning to the turning motor 92m to the first link 92L1, and one end of the first link L1. And a rotation support base 92k for supporting. The turning motor 92m is controlled by a control device 60 provided on the atmosphere side.

  Since FIG. 5 shows the R line of the vacuum deposition chamber 1bu, the same structure is also arranged on the L line with the partition portion 11 shown in FIG. Accordingly, the first link 92L1 of the R line, the board end close contact means 94, the second link 92L2, and the first link 92L1 of the L line, the hollow end of the board end close contact means 94, and the second link 92L2 are connected to the partition portion 11. It becomes the structure connected with air | atmosphere through the provided support part 11A. The second link 92L2 does not necessarily need to be hollow, but as described later, the second link 92L2 needs to move in the direction B shown in FIG. There is a possibility of coming out, and a part of the hollow portion of the support portion 11A is formed to connect to the atmosphere.

  In the above description, when the substrate 6 is set up vertically, there is a possibility that a minute gap is generated between the substrate 6 and the substrate holder 91. It is possible to reliably eliminate the bending of the substrate by its own weight. In this embodiment, since the substrate vapor deposition surface is used as the upper surface, the above-described alignment can be performed as it is when the substrate 6 is set up.

  Second, the configuration and operation for achieving the alignment in step (5) will be described with reference to FIG. FIG. 6 shows the alignment unit 8 according to the present embodiment. In this embodiment, as shown in FIG. 6, the substrate 6 and the shadow mask 81 are set up substantially vertically. The alignment unit 8 holds a shadow mask 81, an alignment base 82 for fixing the shadow mask 81, and an alignment base 82. Are provided at four locations for detecting the alignment mark provided on the substrate 6 and the shadow mask 81. The alignment follower 84 defines the posture of the shadow mask 81 in cooperation with the movement of the alignment driving unit 83. The alignment optical system 85 includes a control device 60 (see FIG. 5) that processes the image of the alignment mark, obtains the alignment amount, and controls the alignment driving unit 83.

  Using such a configuration, alignment is performed as follows. The alignment base 82 is rotatably supported by four rotation support portions in total near the four corners, two locations 81a and 81b at the top, and 81c and 81d provided below each of the two locations. .

  The alignment optical system 85 provided at the four locations detects the positional deviation (ΔX, ΔY, θ) between the substrate 6 and the shadow mask 81 at the center of the substrate. Based on this result, the rotation support portion 81a provided at the upper portion of the alignment base 82 is moved in the X and Z directions shown in FIG. 6, and the rotation support portion 81b provided at the upper portion is moved in the Z direction. Eliminate and align. At this time, along with the movement of the alignment base 82, the rotation support portion 81b is moved in the X direction, and the rotation support portions 81c and 81d provided below the alignment base 82 are moved in the X and Z directions. The rotation support unit 81a is driven by an alignment drive unit 83R having a drive motor provided on the upper wall 1T of the vacuum deposition chamber 1bu, and the rotation support unit 81b is driven and passively by an alignment drive unit 83L, and the rotation support unit 81c, 81d is driven by alignment driven portions 84R and 84L provided under the lower wall 1Y of the vacuum deposition chamber 1bu.

  The mechanism for alignment is provided on the atmosphere side through a seal portion so that dust or the like that adversely affects vacuum deposition is not brought into the vacuum, and this also improves maintainability. Further, the alignment optical system 85 also has a similar effect when the camera, the light source, and the like are housed in a housing cylinder that protrudes toward the vacuum side in the atmosphere.

  Next, the configuration and operation of the substrate contact means 93 for bringing the substrate 6 and the shadow mask 81 into contact with each other in (3), (6), and (8) will be described with reference to FIG. The substrate contact means 93 moves the substrate turning means 92 as a whole in the direction of arrow B back and forth so that the substrate 6 is first brought close to the shadow mask 81 to a certain distance, and then brought into close contact, and after the deposition, Means for returning to the original position. For this purpose, the substrate contact means 93 includes a turning drive unit mounting table 93t for mounting the substrate turning unit 92, a traveling rail 93r for the turning drive unit mounting table 93t, and a turning drive unit mounting table 93t via a ball screw 93n. An approaching motor 93m that drives the motor. The hollow part of the partition part 11 also has a rail (not shown) that moves the second link 92L2 of the substrate turning means 92 in the B direction in accordance with the movement of the turning drive part mounting table 93t. Even if it says a rail, the operating length is about 2 mm at most. By controlling such a mechanism by the control device 60, the substrate 6 can be brought close to, in close contact with, and separated from the shadow mask 81.

  According to the above embodiment, it is possible to eliminate the bending of the substrate during vapor deposition. Further, alignment can be performed while maintaining a distance at which the substrate and the shadow mask do not contact, for example, around 0.5 mm, and then the substrate is brought into close contact with the shadow mask, thereby reducing blurring in vapor deposition and enabling highly accurate vapor deposition.

  Finally, the substrate edge contact means 94 that realizes the contact with the substrate due to the warpage of the shadow masks (4) and (9) will be described with reference to FIG. Even when the substrate 6 is brought into close contact with the shadow mask 81 by the substrate contact means 93, a warp of the shadow mask 81 as shown in FIG. Therefore, in this embodiment, the distance between the substrate holder 91 and the shadow mask is measured, the outer periphery of the edge deposition region of the substrate holder 91 is pressed, the gap between the substrate 6 and the shadow mask 81 is corrected, and the substrate 6 Is brought into close contact with the shadow mask 81.

  FIG. 5 shows an embodiment of the substrate edge contact means 94 that realizes this. The substrate end portion contact means 94 is provided with correction means 94A to 94D in a total of four places, two in the upper part and two in the lower part, in the case 94H in order to correct the warp of the shadow mask and follow the board. . Of the total four correction means 94A to 94D, the upper part warps at the upper part, the lower part warps at the lower part, the right part warps at the right part, and the left part at the left part. Correct each warp.

  FIG. 7 is a diagram showing a configuration of one embodiment of the correction means 94A to 94D, and 94A is representatively shown. Since each means has the same configuration, subscripts (A to D) of each component are omitted. The correction means 94A includes a measurement sensor portion 94K that measures the distance, a pressing mechanism portion 94P that presses the substrate holder 91, and a seal portion 94S that seals vacuum. The seal portion 94S includes seals 94s1 and 94s2 provided on the case 94H and the substrate holder 91, and a seal bellows 94sv for connecting them. The sensor unit 94K includes a laser distance meter 94kr that measures the distance to the shadow mask 81, an optical path shaft 94kh and an optical window 94kw provided in the substrate holder 91 in order to secure an optical path. On the other hand, the pressing mechanism portion (pressing means) 94P includes a pressing portion 94pp of the substrate holder, a pressing rod 94pb whose tip is rotatably attached to the pressing portion, a ball screw 94pn that moves the pressing rod back and forth, a nut 94pt, It consists of a nut guide 94pg and a servo motor 94pm for driving a ball screw.

  The control device 60 presses the substrate holder 91 based on the detection result from the laser distance meter 94kr, and causes the substrate 6 to follow the shadow mask 81. The target gap is, for example, about one digit μm. If the gap is not less than the target gap, correct the average of the four gaps.

  According to the substrate end portion close contact means of the above embodiment, the substrate can be made to follow the warp of the shadow mask with high accuracy, and as a result, there is no film blur even at the substrate end portion and deposition can be performed with high accuracy.

  In the above embodiment, the shadow mask warpage is corrected at four locations. However, for example, if the upper warp is smaller than the target gap, it may be provided at one location in the upper center.

  In the above embodiment, the substrate edge contact means 94 and the substrate holder 91 are integrated. However, if the sensor part of the substrate edge contact means measures the distance between the substrate holder and the shadow mask separately, for example, Since the distance between the substrate and the shadow mask can be measured by the difference between the two, it is not always necessary to integrate them. In this case, for example, the substrate end 91 is placed in a substantially vertical position, and the substrate end contact means 94 is provided on the upper portion of the substrate with the pivot axis, and is swung from the upper portion along the substrate holder 91 to perform end contact correction. May be.

  Further, in the above embodiment, the correction amount is measured by measuring the distance between the substrate holder and the shadow mask with a sensor. However, the correction amount is determined based on the statistically processed distance obtained by measuring the distance in advance for many shadow masks. It is good.

  Also in the above embodiment, the same effect as the embodiment described in detail can be obtained.

  In the embodiment shown in FIG. 5, the inside of the case 94H is opened to the atmosphere side via the first link 92L1 as described in the substrate turning means 92. As a result, the dust from the motor or the like is discharged to the atmosphere with the pressing and does not adversely affect the vacuum deposition. In addition, since an in-vacuum wiring mechanism is realized in which the drive line to the motor and the signal line 94f from the sensor unit are connected to the control device via the case 94H and the first link 92L1, There is no problem of lowering the degree of vacuum due to outgassing. Furthermore, since the case 94H and the link are made of a metal that is strong against rust and has sufficient strength, such as stainless steel and aluminum, no outgassing occurs.

  Therefore, according to this embodiment, a high vacuum can be maintained and a highly reliable vapor deposition process can be performed.

Although the substrate edge portion contact means of the embodiment described above has the substrate along the shadow mask, the shadow mask may be along the substrate.
FIG. 8 shows the alignment unit 8 showing the second embodiment of the substrate edge contact means, and FIG. 9 shows the correction means for pressing the four corners of the shadow mask 81. In FIG. 8 and FIG. 9, those having the same functions as those of the first embodiment are given the same reference numerals.

  In FIG. 8, L-shaped correction means case 94H is provided at the four corners (94A, 94D not shown) of the shadow mask, and seals shown in FIG. It has a part 94S and the other end connected to the atmosphere side.

  Since the four correction means basically have the same structure, the upper correction means will be described as an example. 9 differs from FIG. 7 in that a shadow mask is provided with an optical path hole 94kh and an optical window 94kw, a laser distance meter 94kr measures the distance to the substrate holder 91, and a seal portion 94S is a correction means. This is a point provided between the case 94H and the shadow mask. The other points are basically the same as in FIG.

  Also in the second embodiment, similarly to the first embodiment, a high vacuum can be maintained and a highly reliable vapor deposition process can be performed.

  In the above description, the organic EL device has been described as an example. However, the present invention can also be applied to a film forming apparatus and a film forming method that perform vapor deposition processing in the same background as the organic EL device.

It is a figure which shows the organic EL device manufacturing apparatus which is embodiment of this invention. It is a figure which shows the outline | summary of a structure of the conveyance chamber 2 and the processing chamber 1 which are embodiment of this invention. It is the schematic diagram and operation | movement explanatory drawing of a structure of the conveyance chamber and processing chamber which are embodiment of this invention. It is a figure which shows the operation | movement flow which is embodiment of this invention. It is a figure which shows the board | substrate turning means with which embodiment of this invention, a board | substrate contact | adherence means, and a board | substrate edge part contact | adherence means It is a figure which shows the alignment part which is embodiment of this invention. It is a figure which shows 1st Embodiment of the correction | amendment means which is embodiment of this invention. It is a figure which shows the alignment part which has 2nd Embodiment of the correction | amendment means which is embodiment of this invention. It is a figure which shows 2nd Embodiment of the correction | amendment means which is embodiment of this invention.

1: Processing chamber 1bu: Vacuum deposition chamber 2: Transfer chamber 3: Load cluster 6: Substrate 7: Deposition unit 8: Alignment unit 9: Processing delivery unit 11: Partition unit 60: Controller 71: Evaporation source 81: Shadow mask 81a -D: Rotation support part 82: Alignment base 83: Alignment drive part 84: Alignment driven part 85: Alignment optical system 91: Substrate holder 92: Substrate turning means 92B: Rotation drive part 93: Substrate adhesion means 93g: Substrate approach drive part 94: Substrate edge contact means 94A to 94D: Correction means 94H: Correction means case 94K: Measurement sensor section 94P: Pressing mechanism section 94S: Correction means seal section 100: Organic EL device manufacturing apparatus AD: Cluster.

Claims (17)

In a film forming apparatus having alignment means for aligning a substrate and a shadow mask in a vacuum chamber, and a vacuum evaporation chamber for evaporating an evaporation material in an evaporation source on the substrate,
A substrate holder for placing the substrate and holding it in an upright position, a shadow mask holding means for holding the shadow mask so as to face the substrate in the upright position, and reducing the influence of warpage of the shadow mask A film forming apparatus having a correcting means for performing the above operation.   The film forming apparatus according to claim 1, wherein the correction unit includes a pressing unit that presses the substrate holder.   The film forming apparatus according to claim 1, wherein the correction unit includes a pressing unit that presses the shadow mask.   The said correction | amendment means has a measurement means which measures the distance between the said substrate holder and the said shadow mask, and controls the said press means based on the result of the said measurement means, The Claim 2 or 3 characterized by the above-mentioned. Deposition device.   The film forming apparatus according to claim 2, wherein the correction unit controls the pressing unit based on a predetermined correction amount.   The film forming apparatus according to claim 2, wherein the pressing position where the pressing unit presses the substrate holder is around the outside of the end vapor deposition portion of the substrate.   The film forming apparatus according to claim 3, wherein the pressing position where the pressing unit presses the shadow mask is a position corresponding to the outer periphery of the end vapor deposition portion of the substrate.   The film forming apparatus according to claim 6, wherein the pressing positions are four places provided near the four corners of the substrate holder or the shadow mask.   The correction means is provided in a hollow case, and has a hollow connection portion with one end connected to the hollow case and the other end opened to the atmosphere, and wiring necessary for the correction means is laid through the connection portion. The film forming apparatus according to claim 2, wherein:   The film forming apparatus according to claim 1, further comprising a substrate turning unit configured to bring the substrate holder and the correction unit from a horizontal state.   The film forming apparatus according to claim 10, wherein the substrate turning means is means for turning the connection portion.   The film forming apparatus according to claim 1, wherein the film forming apparatus is an organic EL device manufacturing apparatus using an organic EL as the vapor deposition material. A film forming method for aligning a substrate and a shadow mask in a vacuum chamber and depositing a vapor deposition material on the substrate, comprising: a correction step of correcting warpage of the shadow mask.   The film forming method according to claim 13, wherein the correcting step is a step of pressing a substrate holder for holding a substrate or the shadow mask.   15. The film forming method according to claim 13, wherein the correcting step is performed before alignment.   15. The film forming method according to claim 13, wherein the correction step is performed after alignment.   The film forming method according to claim 13, further comprising a step of closely attaching the entire substrate to a shadow mask after performing alignment.

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