JP2001355067A - Sputter film deposition system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the short circuit between an electrically conductive first film 22 deposited on the surface of a base and a similarly electrically conductive second film deposited on a mask in sputter film deposition, to evade the ignition of arc discharge by heat generation in the short-circuited part and to evade the damage of the films attendant thereon. SOLUTION: The mask 14 is provided with a short circuit preventing part for preventing the short circuit between the first film 22 on the surface of the base and second film 32 on the surface of the mask. The short circuit preventing part is composed of an insulator composing the recessed part and projecting part in the edge face of the mask.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a sputter film forming apparatus.

[0002]

2. Description of the Related Art Conventionally, in the field of manufacturing a liquid crystal display device, there is a sputter film forming apparatus having a mask. FIG.
1 is a schematic cross-sectional view of a sputter film forming apparatus as an example of a conventional configuration, showing a use form at the time of sputtering, and showing a base on which a first conductive film is formed by sputtering. FIG. 14 is an enlarged cross-sectional view of the mask of the sputtering film forming apparatus and the vicinity thereof.

[0003] A sputter film forming apparatus 100, which is an example of this conventional configuration, includes a susceptor 102, a mask 104, a target 106, and a target base 108.

[0004] The susceptor 102 includes a base 110 (for example,
The glass substrate used for the liquid crystal screen is placed. The mask 104 is provided in contact with a predetermined surface region 110B in the surface 110A of the base 110 placed on the susceptor 102, and defines a film formation region on the base surface. The target 106 is disposed so as to face the susceptor 102,
In addition, target particles are grounded by sputtering 1
The conductive film, that is, the undercoat 112 is formed on the underlayer by scattering on the surface 110A of the substrate 10. Target mother 10
8 has a target 106 provided on its surface.

The susceptor 102 is connected to a grounded high-frequency power supply 116 via a matching circuit 114.
Similarly, a grounded high-frequency power supply 120 is connected to the target base 108 via a matching circuit 118. The configuration of the sputter film forming apparatus 100 is an example of a two-frequency excitation high frequency sputter film forming apparatus.

The conventional mask 104 has an upper surface 104D,
Bottom surface 1 having a contact surface in contact with predetermined surface area 110B
04A, the upper surface 104D side protrudes above the base surface and the bottom surface 1
It has a stepped structure in which the 04A side is concave. Therefore, the end surface of the mask 104 is positioned on the upper surface 104 parallel to the base surface.
D and a vertical end face 104B perpendicular to the ground plane.
And a key-shaped (L-shaped) end face 104C connecting the vertical end face 104B and the bottom face 104A (see FIG. 14). That is, the end face 1 on the side facing the base coat 112
04B is connected to an end face 104C in a region near the surface 110A of the base 110 (see FIG. 14).

[0007] A part of the target particles scattered from the target 106 is formed on the upper surface 104D of the mask 104 and the end surface 1D.
04B to form a conductive mask film 122a.

At the same time, another part of the target particles scattered from the target 106 is
The impact when it is attached to the conductive base coat 112 already formed on OA forms scattering particles due to the impact, and adheres to the end face 104C of the adjacent region to form a new conductive mask coat 112b. The mask film 112b is formed on the end surface 104C of the adjacent region, and in some cases,
It may be formed so as to reach 0 and come into contact with the ground surface 110A.

[0009]

By the way, the base 110
Fluctuates, the potential of the susceptor 102 on which the base 110 is placed also fluctuates and becomes unstable. This means
It is not preferable to control the potential of the susceptor 102 by the high frequency power supply 116.

FIG. 15 is a schematic cross-sectional view of a sputter film forming apparatus as another example of the conventional structure, showing a use form at the time of sputtering, in which a conductive film is formed by sputtering. It is shown together with the groundwork.
FIG. 16 is an enlarged cross-sectional view of the mask of the sputtering film forming apparatus and the vicinity thereof.

A sputter film forming apparatus 200 shown in FIG.
The susceptor 102 is grounded. The base 110 includes a glass substrate 220 placed on the susceptor 102, a conductive layer 222 formed on the glass substrate 220 and having a predetermined surface area 222A, and a non-conductive layer 224 formed on the conductive layer 222. Equipped. When the base 110 is, for example, a member used in a thin film transistor (hereinafter abbreviated as “TFT”) liquid crystal display device, the conductive layer 222 corresponds to a gate electrode. FIG. 15 does not show the source electrode and the drain electrode. On the other hand, the conductive undercoat 112 is formed on the non-conductive layer 224 by sputtering.

In the case of the sputter film forming apparatus 200, as in the case of the sputter film forming apparatus 100, a part of the target particles scattered from the target 106 adhere to the upper surface 104D and the vertical end surface 104B of the mask 104, and the conductive film becomes conductive. Is formed (see FIG. 16).

At the same time, another part of the target particles scattered from the target 106 becomes scattered particles due to the impact when the particles adhere to the base coat 112 already formed on the base surface 110A, and become adjacent particles. A new conductive mask film 122 attached to the L-shaped end surface 104C of the
b is formed. The new mask coating 122b reaches the conductive layer 222 from the L-shaped end face 104C, and in some cases, and the new mask coating 122b may come into contact with the conductive layer 222 (see FIG. 16).

At this time, the conductive layer 2 on the glass substrate 220
The potential of the conductive mask film 122b in contact with 22 is
Since the potential is different from the potential of the conductive layer 222,
A current is discharged between the mask coating 122b and the conductive layer 222.

However, since the mask film 122a continuously covers the upper surface 104D and the vertical end surface 104B, the surface area of the film is large. Therefore, electric energy charged in the mask film 122a is large. on the other hand,
Since the conductive mask film 122b formed on the L-shaped end surface 104C in the adjacent region reaches the conductive layer 222 on the glass substrate, the electric energy charged in the mask film 112b is also large. Therefore, the discharge current is large. Therefore, the contact short-circuit portion (vertical end surface 104B) of conductive mask film 122b and conductive mask film 122a
And near the boundary region of the L-shaped end face 104C), heat is generated and evaporated, and an arc discharge is ignited. Due to this arc discharge, the conductive undercoat 112 formed on the non-conductive layer 224 may be broken (traces of this breakdown are referred to as “arc traces”).

Further, in order to prevent this arc discharge, L
Conductive mask coating 1 formed on the V-shaped end face 104C
Although it is necessary to remove 22b, it takes a long time to perform the removal operation, which hinders improvement in productivity of the liquid crystal screen.

Therefore, in order to solve these problems,
A mask having a configuration that prevents a mask film deposited on the upper surface side of the mask end face and a mask film deposited on the bottom surface side from being continuously formed, that is, prevents a short circuit between the two mask films. The emergence of a sputter deposition apparatus has been required.

[0018]

In order to achieve this object, a sputter deposition apparatus according to the present invention includes a susceptor, a mask and a target. A base is placed on the susceptor. The mask is placed in contact with a predetermined surface area of a base placed on the susceptor. The target is disposed so as to face the susceptor, and scatters target particles on the surface of the base by sputtering to form a first conductive material.
A coating, ie, a base coating, is formed. In this configuration,
The mask is a contact / short-circuit preventing portion for preventing a short circuit between a conductive second coating, ie, a mask coating formed directly on the surface of the mask by scattering target particles, and a first coating formed in contact with a base. Equipped.

According to such a configuration, the second coating and the first coating can be prevented from being short-circuited, that is, undesired contact with each other, by the short-circuit preventing portion. The potential can be stabilized. In addition, since ignition of arc discharge due to a short circuit between the second coating and the first coating can be prevented, for example, the first coating formed on the base is not destroyed. Therefore, a high-quality first coating can be formed on the surface of the base by sputtering. Therefore, a high quality product can be manufactured. In addition, the first conductive layer formed on the surface of the mask may be used.
Since the operation of sequentially removing the coating is not required, the production efficiency of the product is improved.

In practicing the present invention, the mask preferably has a bottom surface having a contact surface in contact with a predetermined surface area, and an end surface on a side facing the first coating. Note that this end face is an end face that connects, ie, connects, the top and bottom surfaces of the mask. The short-circuit preventing portion has a concave portion for discontinuously forming the first coating on the end surface, and an insulating portion constituting at least an end surface side portion of the mask from the contact surface to the upper surface of the mask. With body.

This concave portion may be provided at any position on the end face between the upper surface of the mask and the contact surface as long as the first film to be formed functions so as to be discontinuous.

For example, when the end face is composed of a vertical end face on the top side and an L-shaped end face on the bottom side, the L-shaped end face is a downward end face along the upper surface of the base and close to the base. Provide an area. It is preferred to provide this recess in the downward end face region. Preferably, the concave portion has, on its inner surface, a concave portion non-adhered region that makes the scattering particles from the base side of the target particle non-adhered.

With such a configuration, the concave portion prevents the first conductive film, ie, the base film, and the second conductive film, ie, the mask film, from short-circuiting with each other, that is, does not cause undesired contact. Therefore, the potential of the susceptor can be stabilized, and an arc discharge due to a short circuit between the first coating and the second coating can be prevented.

In carrying out the above-mentioned invention, preferably,
The base is preferably a glass substrate.

With this configuration, a high-quality liquid crystal display device (for example, a simple matrix liquid crystal display device) can be manufactured based on the base.

In practicing the present invention, preferably, the sputtering film forming apparatus is a two-frequency excitation high-frequency sputtering film forming apparatus in which a high-frequency voltage is individually applied to a target and a susceptor.

In carrying out the above invention, preferably,
The base may include a glass substrate mounted on the susceptor, a conductive layer formed on the glass substrate and having a predetermined surface area, and a non-conductive layer formed on the conductive layer. .

With this configuration, a high-quality liquid crystal display device (for example, a TFT liquid crystal display device) can be manufactured based on the base.

[0029]

Embodiments of the present invention will be described below with reference to the drawings. In the drawings, the size, shape and arrangement of each component are only schematically shown to the extent that the present invention can be understood, and therefore, the present invention is not limited to the illustrated example. .

[First Embodiment] The configuration of a sputter film forming apparatus 10 according to the first embodiment will be described with reference to FIG.

FIG. 1 is a cross-sectional view showing the structure of a sputtering film forming apparatus according to the first embodiment, showing a use form at the time of sputtering, in which a first conductive film is formed by sputtering. It is shown together with the base.

In this configuration example, the base 20 is a glass substrate used in a liquid crystal display device (for example, a simple matrix liquid crystal display device).

FIG. 2 is a plan view showing the surface of the base.

The base 20 is a thin flat plate, and the plane shape of the surface 20A, which is the main surface of the base 20, is rectangular as shown in FIG. Surface 20A includes a predetermined surface area 20B near and within a predetermined distance of the longer side of the rectangle. As described below,
The bottom surface 14A of the mask 14 is
(See FIG. 3) is placed.

In this configuration example, the sputtering film forming apparatus 1
0 is a two-frequency excitation high frequency sputtering film forming apparatus.
The sputtering film forming apparatus 10 includes a susceptor 12, two masks 14, a target 16, and a target base 18. The base 20 is placed on the susceptor 12.

Each mask 14 has the same shape as each other, and is individually provided in contact with each predetermined surface area 20B in the surface 20A of the base 20 placed on the susceptor 12.
The configuration of the mask 14 is a characteristic part of the present invention and will be described later in more detail. In this example, the mask 14
Is composed entirely of an insulator.

The target 16 is arranged to face the susceptor 12. The target 16 is formed by sputtering the target particles onto the surface 20A of the base 20 by sputtering.
To form a base coat as the conductive first coat 22. The target 16 is made of, for example, aluminum metal. Note that some of the target particles scattered from the target 16 directly adhere to the surface of the mask 14 and
Conductive second coating 32 (also referred to as mask coating)
To form

The target base 18 is a conductive base 18A.
And a backing plate 18B provided on the surface of the conductive matrix 18A. The target 16 is provided on the backing plate 18B.

Further, the sputtering film forming apparatus 10 includes a matching circuit 24, a high-frequency power supply 26, a matching circuit 28, and a high-frequency power supply 3.
0, a reaction gas supply mechanism 38, an exhaust unit 40, and a gate valve 42.

The matching circuit 24 is connected to the susceptor 12. The high-frequency power supply 26 is connected to the matching circuit 24 and is grounded. The frequency of the high-frequency power supply 26 is, for example, 13.56 MHz. Matching circuit 28
Are connected to the conductive base 18A. High frequency power supply 3
0 is connected to the matching circuit 28 and is grounded. The frequency of the high-frequency power supply 30 is, for example, 40.68
MHz. The reaction gas supply mechanism 38 supplies a gas (for example, argon gas) used at the time of sputtering into the sputtering film forming apparatus 10. Exhaust unit 40
Exhausts the gas in the sputtering film forming apparatus 10 and keeps the pressure constant. The gate valve 42 is connected to the sputter film forming apparatus 10.
And another processing chamber (not shown). Also, a mask moving mechanism (not shown) is attached to the mask 14, and the mask moving mechanism can move the mask 14 up and down. As a result, the substrate 20 is placed on the susceptor 12 and the predetermined surface area 2
The mask 14 is placed on 0B. Note that the sputtering film forming apparatus 10 is grounded.

Next, with reference to FIGS. 3 and 4, one configuration example of the mask 14, which is a feature of the present invention, will be described in more detail.

FIG. 3 is a perspective view of the mask. FIG.
FIG. 2 is an enlarged sectional view of the vicinity of a main part of the mask in FIG. 1.

In this configuration example, the mask 14 has a substantially rectangular shape as a whole, and its main direction is
0 extends parallel to and along the longer side of the rectangle that is the shape of the surface 20A.

As shown in FIG. 4, the mask 14 has a contact surface 14a in contact with a predetermined surface region 20B of the base 20, and has a bottom surface 14A parallel to the surface 20A, and faces the target 16; Upper surface 14C parallel to surface 20A
And an end surface 1 connecting the bottom surface 14A and the top surface 14C
4B.

Next, in the configuration examples shown in FIGS. 3 and 4, a key-shaped step is formed on the end face 14B of the mask 14. That is, the end surface 14B is connected to the mask upper surface 14C and is perpendicular to the surface of the base, that is, the fourth end surface, that is, the vertical end surface 14B4, and the L-shaped end surface (14B1,. 14B2, 14B3
And a concave surface of the concave portion 14B5 formed on the L-shaped end surface. In addition, 14B1, 14B2, 1
4B3 is a first end surface, a second end surface, and a third end surface, respectively.

The first end surface 14B1 is connected to the bottom surface 14A, that is, a portion connected to the bottom surface 14A, and is perpendicular to the bottom surface 14A. The length of the first end face 14B1 when viewed as a sectional view (FIG. 4) is
For example, it is 1 mm in a direction perpendicular to the bottom surface 14A.

The second end surface 14B2 connects between the first end surface 14B1 and the concave portion (concave surface) 14B5, and
Parallel along 4A. The length of the second end face 14B2 when viewed as a sectional view (FIG. 4) is, for example, 0.3 mm in a direction parallel to the bottom surface 14A (the width direction of the mask 14).

The recess 14B5 connects between the second end face 14B2 and the third end face 14B3. As shown in FIG. 4, the shape of the recess 14B5 when viewed as a sectional view (FIG. 4) is as follows.
It is a semicircle. Therefore, the shape of the concave portion 14B5 when viewed as a perspective view as shown in FIG. 3 is a semi-cylindrical column. The radius of the semicircle (or semicircle) is, for example, 2 mm.

The third end face 14B3 connects the recess 14B5 and the fourth end face 14B4, and is parallel to the bottom face 14A. Third as viewed in cross section (FIG. 4)
The length of the end face 14B3 is, for example, 0.1 mm.

Therefore, the second end surface 14B2, the concave portion (concave surface)
14B5 and the third end surface 14B3
A, and faces the same side as the mask bottom surface 14A to form a downward end face region. The downward end face area is an end face area close to the base 20. That is, the concave portion 14B5 is provided in the downward end face region.

The fourth end surface 14B4 connects between the third end surface 14B3 and the upper surface 14C, and is perpendicular to the bottom surface 14A.

In the first end face 14B1, the second end face 14B2, the third end face 14B3, and the concave portion (concave surface) 14B5, regions other than the concave portion non-covered region 14B5A (described later) scatter target particles from the base 20 side. The particles are attached, and the conductive second coating 32b is continuously formed. The scattering particles are particles that are repelled when the target particles adhere to the conductive first coating 22 already formed on the surface 20A of the base 20. As shown in FIG. 4, the second coating 32b formed in these regions is particularly suitable for the first end surface 14b.
It is applied so as to reach the base 20 on B1.

The target particles are scattered from the target 16 on the fourth end surface 14B4 and the upper surface 14C, and the conductive second coating 32a is directly formed. This second coating 32a
Is in contact with the second coating 32b formed on the third end face 14B3.

When the recess 14B5 is viewed from the intersection P between the extension of the fourth end face 14B4 and the ground 20, the recess 14B5
There is a shaded part in 5. Therefore, even if the target particles from the target 16 flick off the first coating film 22 at the intersection P, they do not directly adhere to the shaded portion. The migration distance after the attachment of the target particles is at most 10
μm, which is much smaller than the radius of the recess 14B5. Therefore, even in consideration of this migration, the second coating 32b (that is, the first end face 14B1, the second end face 14B2, and the concave non-adhered area 1) that is in contact with the base 20 is formed.
The second coating of the region portion continuously formed on the concave portion (concave surface) 14B5 in the region other than 4B5A) is the third end surface 14B3.
And the second coating 32a formed in contact with the second coating 32a.
Contact with the coating 32b does not occur. That is,
The second coating 32b in contact with the substrate 20 always
It is discontinuous with the coating 32a.

According to the above configuration, the short-circuit preventing portion (the concave portion 1)
4B5 and the insulator 14B5) can prevent a short circuit between the second coating 32 and the first coating 22 that is in contact with the surface 20A of the base 20.
The potential of the susceptor 12 can be stabilized. Therefore, since the first conductive film 22 having good conductivity can be formed on the surface 20A of the base 20 by sputtering, a good product (in this case, a liquid crystal display device) can be manufactured. In addition, since there is no need to sequentially remove the second coating 32 formed on the surface of the mask 14, the production efficiency of the product is improved.

[Second Embodiment] Next, the configuration of a sputter film forming apparatus 50 according to a second embodiment will be described with reference to FIG.

FIG. 5 is a cross-sectional view showing the configuration of a sputter film forming apparatus according to the second embodiment, showing a use mode at the time of sputtering, in which a first conductive film is formed by sputtering. It is shown together with the base.

In this configuration example, the susceptor 12 is grounded, and the sputtering film forming apparatus 1 shown in the first embodiment is used.
The matching circuit 24 connected to the 0 susceptor 12 and the high frequency power supply 26 connected to the matching circuit 24 do not exist.

Next, referring to FIGS. 6 and 7, in addition to FIG. 5, the structure of the base will be schematically described.

FIG. 6 is a diagram schematically showing, in an enlarged scale, a part of the cross section of the base, and shows the cross section of the base as viewed from the gate valve side in FIG. FIG. 7 is a plan view when the base is viewed from the intermediate layer side.

The base 20 is a well-known member, and is used, for example, in a TFT liquid crystal display device.

The underlayer 20 includes a glass substrate 51 placed on the susceptor 12, a conductive layer formed on the glass substrate 51 and having a predetermined surface area 52A (see FIG. 7), that is, a conductive third coating 52. (Corresponding to a gate electrode) and an intermediate layer 54 formed on the conductive layer 52. The mask 1 is formed on the predetermined surface region 52A in the same manner as in the first embodiment.
4 is placed.

Next, the structure of the intermediate layer 54 will be schematically described.

The intermediate layer 54 includes an insulating layer 56 provided on a region of the glass substrate 51 other than the predetermined surface region 52A of the conductive layer 52 and on the conductive layer 52, and a part of the surface of the insulating layer 56. A semiconductor layer 58 provided immediately above, an ohmic contact layer 60 provided on a part of the surface of the semiconductor layer 58, and a drain electrode provided on a part of the surface of the insulating layer 56 and the ohmic contact layer 60, respectively. 62, a source electrode 64, and an insulating layer 66 covering these layers. A contact hole 68 is provided in the insulating layer 66 and communicates with the drain electrode 62. As shown in FIG. 7, each source electrode 64 extends linearly and parallel to each other. Each gate electrode (conductive layer 52) extends linearly and parallel to each other, and is orthogonal to the extending direction of each source electrode 64.

The first conductive film 22 is formed on the insulating layer 66 by sputtering.

Next, the operation of the mask 14 according to the second embodiment will be described with reference to FIG.

FIG. 8 is an enlarged sectional view of the vicinity of the main part of the mask in FIG.

Also in this configuration example, the mask 14 is the same as the mask 14 in the first embodiment. As described above, the mask 14 has a contact surface 14a that contacts the predetermined surface region 52A and is parallel to the surface 20A, a bottom surface 14A facing the target 16 and parallel to the surface 20A, and a bottom surface 14C. It has an end surface 14B on the side that is connected between the upper surface 14C and the upper surface 14C and that faces the first coating 22.

The end face 14B has the first to fourth end faces 14B1 to 14B, similarly to the end face 14B in the first embodiment.
4 and a concave portion (concave surface) 14B5. In this example, the first end face 14B1 is not in contact with the intermediate layer 54.

The second coating 32 is formed on the end face 14B.

In the first end face 14B1, the second end face 14B2, and the area other than the non-recess-covered area 14B5A of the recess 14B5, scattering particles of the target particles from the base 20 side are adhered, and the second conductive film is formed. 32b are continuously formed. As shown in FIG. 8, the second
The coating 32b is applied so as to reach the conductive layer 52 (gate electrode), which is the third coating.

The second coating 32b is formed on the third end face 14B3 as in the first embodiment.

As in the first embodiment, a second coating 32a is formed on the fourth end face 14B4 and the upper face 14C. The second coating 32a is in contact with the second coating 32b formed on the third end face 14B3.

Even in this embodiment, the second coating 32a and the conductive layer 52 are formed by the short-circuit preventing portion (the concave portion 14B5 and the insulator forming the concave portion 14B5).
Can be prevented from short-circuiting with the first coating 22 formed in contact with the surface of the substrate. Therefore, the insulating layer 66 (see FIG. 6),
Therefore, since it is possible to prevent arc discharge from being caused by a short circuit between the first coating 22 and the second coating 32 formed on the surface of the intermediate layer 54, for example, it is formed on the insulating layer 66. The first coating 22 is not destroyed. Therefore, the high quality first coating film 22 can be formed by sputtering. Therefore, a high quality product can be manufactured. Also, the first coating 22 formed on the surface of the mask 14
Since there is no need to perform an operation of sequentially removing, the production efficiency of the product is improved.

[Explanation of Modifications] The present invention is not limited to the above-described embodiment, and various modifications can be made according to the design.

For example, in the above-described embodiment, the recess 14
Although B5 is provided between the second end face 14B2 and the third end face 14B3, the position of the recess 14B5 is not limited to this. For example, as shown in FIG. 9, it may be provided in the fourth end surface 14B4. In the above-described embodiment, the shape of the recess 14B5 is a semi-cylindrical column.
The shape of 4B5 is not limited to this.
For example, as shown in FIG. or,
In the above embodiment, the fourth end surface 14B4 is connected to the bottom surface 14A.
However, as shown in FIG. 11, it may be inclined obliquely with respect to the bottom surface 14A.

However, the concave portion (concave surface) 14 B 5 prevents short-circuit between the conductive second coating 32 and the conductive first coating 22 formed in contact with the base 20.

In the above embodiment, the entire mask 14 is made of an insulator, but the entire mask 14 does not need to be made of an insulator. As shown in FIG. 12, at least a portion extending from the bottom surface 14A in contact with a predetermined surface area (not shown in FIG. 12, see FIG. 4 or FIG. 8) to the end surface 14B where the second conductive film 32 is discontinuous. But insulator 7
It is sufficient if it is composed of 0.

[0079]

As is clear from the above description, according to the sputter film forming apparatus of the present invention, the
Since a short circuit between the conductive second coating and the conductive first coating formed in contact with the base can be prevented, the potential of the susceptor can be stabilized. Also, the second coating and the first coating
Since the ignition of the arc discharge due to the short circuit with the coating can be prevented, for example, the first coating on the base is not destroyed. Therefore, a high quality product can be manufactured. In addition, since there is no need to sequentially remove the second coating formed on the surface of the mask, the production efficiency of the product is improved.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a configuration of a sputtering film forming apparatus.

FIG. 2 is a plan view showing a surface of a base.

FIG. 3 is a perspective view of a mask.

FIG. 4 is an enlarged sectional view of a main part of the mask.

FIG. 5 is a cross-sectional view illustrating a configuration of a sputtering film forming apparatus.

FIG. 6 is a diagram schematically illustrating an enlarged part of a cross section of a base.

FIG. 7 is a plan view when a base is viewed from a non-conductive layer side.

FIG. 8 is an enlarged sectional view of a main part of the mask.

FIG. 9 is a perspective view of a mask (a modified example).

FIG. 10 is a perspective view of a mask (modification).

FIG. 11 is a perspective view of a mask (modification).

FIG. 12 is a cross-sectional view of a mask (modification).

FIG. 13 is a schematic sectional view (1) of a conventional sputtering film forming apparatus.

FIG. 14 is an enlarged cross-sectional view of a main part of a conventional mask (1).
It is.

FIG. 15 is a schematic sectional view (2) of a conventional sputtering film forming apparatus.

FIG. 16 is an enlarged sectional view (2) of a main part of a conventional mask.
It is.

[Explanation of symbols]

 10, 50: sputter film forming apparatus 12: susceptor 14: mask 14A: bottom surface 14B: end surface 14B1 to 14B4: first to fourth end surface 14B5: concave portion 14C: top surface 16: target 18: target base 18A: conductive base 18B: Backing plate 20: Base 20A: Surface 20B, 52A: Predetermined surface area 22: First coating 24, 28: Matching circuit 26, 30: High frequency power supply 32 (32a, 32b): Second coating 38: Reactive gas supply mechanism 40: Exhaust unit 42: Gate valve 51: Glass substrate 52: Conductive layer 54: Intermediate layer 56, 66: Insulating layer 58: Semiconductor layer 60: Ohmic contact layer 62: Drain electrode 64: Source electrode 68: Contact hole 70: Insulator

Continuing on the front page (72) Inventor Makoto Sasaki 3-31 Akimitsu, Izumi-ku, Sendai-shi, Miyagi F-Tech Co., Ltd. F-term (reference) 4K029 AA09 AA24 BB02 BC03 BD00 CA05 DC12 DC35 HA03

Claims (6)

[Claims] 1. A susceptor on which a base is placed, a mask placed in contact with a predetermined surface area of the base placed on the susceptor, and a susceptor disposed opposite to the susceptor;
A target that scatters target particles on the surface of the base by sputtering to form a conductive first coating, wherein the mask is formed by scattered target particles and formed directly on the surface of the mask. A sputter film forming apparatus, comprising: a short-circuit preventing unit for preventing a short circuit between the second film having a property and the first film formed in contact with the base. 2. The sputtering film forming apparatus according to claim 1, wherein the mask has a bottom surface having a contact surface in contact with the predetermined surface region, and an end surface on a side facing the first film. The short-circuit preventing portion includes a concave portion for forming the second coating discontinuously on the end surface, and an insulator at least constituting an end surface side portion of the mask from the contact surface to the concave portion. A sputter deposition apparatus characterized in that: 3. The sputter deposition apparatus according to claim 2, wherein the end face has a downward end face area along the surface of the base and close to the base, and The concave portion is provided, and the concave portion has a concave portion non-adhered region on an inner surface of the target particle, in which the scattering particles from the base side are not adhered. Film forming equipment. 4. The sputter deposition apparatus according to claim 1, wherein the base is a glass substrate. 5. The sputter film forming apparatus according to claim 4, wherein the sputter film forming apparatus is a two-frequency excitation high frequency sputter film forming apparatus in which a high frequency voltage is individually applied to the target and the susceptor. Characteristic sputter film forming apparatus. 6. The sputtering film forming apparatus according to claim 1, wherein the underlayer comprises a glass substrate mounted on the susceptor;
A sputter film forming apparatus, comprising: a conductive layer formed on the glass substrate and having the predetermined surface area; and an intermediate layer formed on the conductive layer.