JPH11323546A - Sputtering apparatus for large-sized substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the phenomenon of the local and deep erosion of a target for supplying thin film raw material of a sputtering apparatus for large-sized substrates for forming thin films on TFT array substrates, etc., of an active matrix type liquid crystal display device using thin-film transistors as switching elements. SOLUTION: A magnet device 32 for applying a magnetic field in a perpendicular direction to the surface of the target arranged in the upper part of a deposition chamber is freely turnably mounted in such a manner that the magnetic poles formed to a rectilinear shape face the target and the device turns within a plane parallel with the target surface. The magnet device is so constituted that the direction of the magnetic poles is a prescribed argument at which the left side end in the advance direction of scanning precedes in the intermediate part of scanning, turns according to the scanning near the terminal part of the target end and attains the direction perpendicular to the scanning direction at the target end. The magnet device scans back and forth in the space where the target is arranged.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering apparatus for a large substrate for forming a thin film on a TFT array substrate of an active matrix liquid crystal display (TFT-LCD) using a thin film transistor (TFT) as a switching element. It is.

[0002]

2. Description of the Related Art FIG. 9 is a sectional view of a main part of a conventional sputtering apparatus for large substrates, and FIG. In the drawing, reference numeral 1 denotes a film forming chamber for performing sputtering, 2 denotes a film forming chamber base, 3 denotes a susceptor on which a substrate is mounted, and a susceptor support member 3a and a susceptor driving cylinder 3b are attached to a lower portion. It is supported so that it can be adjusted. Reference numeral 4 denotes a mask, to which a mask supporting member 4a and a mask driving cylinder 4b are attached and supported so that the height can be adjusted vertically. The susceptor support member 3a and the mask support member 4a are configured by the bellows 3c and the bellows 4c so that the sealed structure can be maintained even if the height is adjusted vertically. 5 is a gate valve attached to the entrance of the substrate, 6 is a backing plate that seals the upper part of the film forming chamber 1, 7 is a shield electrode that suppresses distortion of the electric field at the end of the sputtering portion inside the film forming chamber 1, 8 Is a vacuum evacuation unit for evacuating the inside of the film forming chamber 1, 9 is a gas supply unit for supplying a sputtering gas, 10 is a substrate on which a thin film is formed, 11 is a film forming material attached to the lower surface of the backing plate 6. A target 12 serving as a supply source is disposed on the back of the target 11, and a magnet device for applying a vertical magnetic field to the surface of the target 11. A magnet device 13 is formed by rotating a driving screw 13 a screwed to a support of the magnet device 12. A magnet device moving mechanism for scanning by reciprocating 12;
Reference numeral 14 denotes a power supply for applying a high negative voltage to the target 11 and the shield electrode 7, and reference numeral 15 denotes a voltage application cable.

[0003] The overall configuration is configured as shown in FIG.
A robot chamber 16 accommodating a robot 16a for transporting the substrate 10 is disposed at the center, and a plurality of film forming chambers 1 are arranged around the robot chamber.
a, 1b, 1c, a pre-heating chamber 17 and two pre-evacuation chambers 18 are arranged, and the robot chamber 16 and the film forming chambers 1a, 1a,
b, 1c, gate valves 9a, 9b, 9c, 9d, 9 between the preliminary exhaust chamber 18 and the preliminary heating chamber 17, respectively.
e and 9f are provided and connected to each other. 19 is a preparation table for preparing the substrate 10. The substrate 10 is made to stand by in a vacuum state in the pre-evacuation chamber 18 in units of about 20 lots, and before being carried into the film formation chambers 1a, 1b, and 1c.
The preheating is performed in the preheating chamber 17 for each lot, and the wafers are sequentially loaded one by one into the film forming chambers 1a, 1b, and 1c to perform sputtering.

Next, the operation inside the film forming chamber 1 of the sputtering apparatus for large substrates shown in FIG. 9 will be described. FIG. 11 shows FIG.
FIG. 4 is an explanatory view schematically showing a state of a sputtering operation in a film forming chamber 1 of the conventional large substrate sputtering apparatus shown in FIG. The substrate 10 is placed on the upper surface of the susceptor 3, the peripheral portion is fixed by the mask 4, and the central portion is supported by the susceptor 3 in a state where the thin film is exposed so as to form a thin film. 10
a is a thin film formed on the surface of the substrate 10. On the lower surface of the upper backing plate 6, a target 11 serving as a supply source of a film forming material for forming a thin film on the substrate 10 is attached. Shield electrodes 7 are arranged at both ends, susceptor 3, mask 4, and shield electrode 7 are electrically connected and grounded, and a negative high voltage from power supply 14 is applied to backing plate 6 on which target 11 is attached. Argon gas as a sputtering gas is flowed at an appropriate pressure and flow rate in the film forming chamber 1. In the figure, e represents electrons, A represents argon gas ions, K represents sputtered particles, and the portion surrounded by a broken line of P represents plasma.

Next, a case where a chromium thin film is formed on a surface of a substrate of an active matrix type liquid crystal display device by using a sputtering gas as an argon gas will be described. The external dimensions of the target 11 are 750 mm in height, 600 mm in width, and 8 mm in thickness.
A case where a non-alkali glass plate having a thickness of 500 mm, a width of 500 mm and a thickness of 0.7 mm is used will be described.

The inside of the film forming chamber 1 is maintained in a vacuum state, the substrate 10 carried in from the preheating chamber 17 is placed on the septum 3, and the center of the substrate 10 is fixed by the mask 4 in an open state. In a state where the temperature of the substrate 10 is maintained at 200 ° C. and the inside of the film formation chamber 1 is kept at a high vacuum, a sputtering gas is supplied from the gas supply means 9 at a predetermined pressure and flow rate.
When a negative high voltage is applied from the power supply 14 to the backing plate 6 on which the magnet unit 12 is attached, and the magnet device 12 is reciprocated in the horizontal direction and scanned, the magnetic field generated by the magnet device 12 causes the surface of the target 11 to have a high density. Plasma P is generated,
By moving the magnet device 12, the generated plasma P also moves, and the entire surface of the target 11 is sputtered, and the sputtered particles K adhere to the surface of the substrate 10 to form a uniform chromium thin film 10a. When the pressure of an argon gas as a sputtering gas is flowed at a flow rate of 100 cc / min at a pressure of about 10 mtorr, the power supplied from a power source is maintained at 16 kW, and the magnet device 12 is reciprocated 10 times in the horizontal direction at a speed of 8 m / sec, the surface of the substrate 10 400 thick
The chromium thin film 10a of nm is formed. At this time, the power consumed for processing one substrate 10 is about 160 Wh.

When operating under the above conditions, the target 1
FIG. 12 shows the distribution of erosion depth eroded by sputtering
Shown in FIG. 12 shows the state of erosion by expressing the depth of erosion by contour lines, where the state of a new article is 0 mm and the depth of erosion is expressed in mm. The erosion of target 11
The central portion is almost uniformly eroded, but one of the longitudinal ends is deeply eroded.

This phenomenon will be described with reference to FIGS. In the figure, E indicates the direction of the electric field, B indicates the direction of the magnetic field, and the dotted line indicates the state of the lines of magnetic force. As shown in FIG. 13, when the magnet device 12 is located at the center of the target 11, the center of the magnet device 12 is directed to the direction B of the magnetic field on the surface of the target 11.
And the direction E of the electric field are substantially parallel to each other, and the charged particles such as argon ions A and electrons e in the plasma are hardly biased.

However, when the magnet device 12 approaches the end of the target 11 as shown in FIG. 14, the direction B of the magnetic field on the surface of the target 11 is almost vertical as in the case of the central portion, but the direction B of the electric field is small. The direction E extends to the end side because the shield electrode 7 disposed at the end is near, and is oblique to the horizontal direction with respect to the surface of the target 11. Therefore, at the end of the target 11, a so-called E × B drift occurs due to Fleming's law, and the charged particles move by receiving a force in a specific direction in the longitudinal direction of the magnet, so that a deep erosion occurs on one side. I do. Under such conditions, the integrated power applied to the target 11 is 700 kWh, and the deepest part of the erosion reaches about 6 mm,
The target 11 needs to be replaced while other parts remain sufficiently. Target 1 in this state
The utilization rate of 1 is about 20%, and the thickness of the portion of the substrate 10 facing the eroded portion of the target 11 is formed to be thicker than other portions, and the uniformity of the film pressure is deteriorated.

In a conventional apparatus, for example, when a two-layer thin film pattern is formed via an insulating film as shown in FIG. 15 as a product structure on a TFT substrate for a liquid crystal display, An auxiliary capacitance wiring 21 of a chromium thin film is formed, and a pixel pattern 23 of an ITO (Indum tin oxide) film is formed via an insulating film 22 of silicon nitride. When a chromium thin film for wiring is formed on a substrate having a configuration in which the capacitance wiring 21 is exposed, the following is performed.

In the conventional apparatus, the size of the film formation region is 500 mm while the size of the target 11 in the scanning direction of the magnet device 12 is 750 mm, and the scanning range of the magnet device 12 is deposited on the uneroded portion of the target 11. The generation of foreign matter due to the peeling of the film is suppressed, and the target 11 is eroded uniformly.
Is set to about 700 mm, and at both ends of the scan, the plasma for sputtering exceeds the substrate 10 on which the film is to be formed.
Scanning is performed up to the mask 4, but at the end of the scan, the electric field is affected by the shield electrode, and a state including a horizontal component is caused. The charged particles in the plasma P diffuse in the direction of the mask 4 and the shield electrode 7. The condition was such that the density of charged particles in the plasma P was reduced.

At the time of sputtering of the conventional apparatus, as shown in FIG.
Is charged up to a potential close to the average potential (plasma potential) near the center of the target 11. For example, when a voltage of -750 V is applied to the target 11, the plasma potential becomes about -600 V in consideration of the cathode drop.
Therefore, the potential of the pixel pattern 23 is about -600V. On the other hand, the potential of the auxiliary capacitance wiring 21 largely depends on the plasma P in contact with the portion exposed from the contact hole 24. Therefore, contact hole 2
When the mask 4 is in the vicinity of the mask 4, the mask 4 and the auxiliary capacitance wiring 21 are connected with low resistance via the plasma P which is a conductor, and the potential of the auxiliary capacitance wiring 21 is close to the ground potential. Thus, a large potential difference is applied to the insulating film 22.

As a countermeasure against this, it is necessary to set a large contact resistance between the contact hole 24 and the plasma P.
One 20 μm square is used per book. However, when the scanning range of the magnet device 12 exceeds the film formation region as described above, the distance between the plasma P and the mask 4 and the shield electrode 7 is small at the turning end of the scanning. The particles are diffused in the direction of the mask 4 and the shield electrode 7 to lower the plasma density. This is a decrease in the sputter current density. Since the power supply is controlled at a constant power, the sputter voltage increases, the plasma potential increases, and the potential difference between the pixel pattern 23 and the auxiliary capacitance wiring 21 increases. This also threatens the insulation of the portion of the insulating film 22 made of silicon nitride between the auxiliary capacitance wiring 21 and the pixel pattern 23 indicated by the mark x in the drawing.

[0014]

As described above, in the conventional sputtering apparatus for a large substrate, a deep erosion is locally generated at the end of the target 11, and the depth of the erosion increases the life of the target 11. There is a problem that the utilization rate of the target, which is dominant and needs to be replaced even though the other parts have sufficient thickness, is low. Further, the thickness of the portion of the substrate 10 facing the eroded portion of the target 11 is formed to be thicker than other portions, and there is a problem that the uniformity of the film pressure is deteriorated. Further, the target 1
Since the dimension of the substrate 1 is set to be large, the structure of the edge portion of the substrate is a two-layer thin film pattern at the end of the film formation region in a product in which a two-layer thin film pattern is formed via an insulating film. There is also a problem that the insulating film 22 between them may be broken down.

[0015]

According to a first aspect of the present invention, there is provided a sputtering apparatus for a large substrate, comprising a magnet device for applying a magnetic field in a vertical direction to the surface of the target, wherein a magnetic pole formed linearly faces the target. The magnetic pole direction is fixed at a predetermined angle in the middle of scanning, and rotates in accordance with the scanning near the end of the target, so that the target rotates in a plane parallel to the target surface. The end is configured to be perpendicular to the scanning direction, and reciprocating scanning is performed while the target is arranged.

According to a second aspect of the present invention, there is provided a sputtering apparatus for a large substrate, wherein the rotating direction of the magnetic poles of the magnet device according to the first aspect is supported by a spring.

According to a third aspect of the present invention, there is provided a sputtering apparatus for a large substrate, wherein the magnetic pole of the magnet device according to the first aspect is rotated by a step motor.

According to a fourth aspect of the present invention, there is provided a sputtering apparatus for a large substrate, wherein the magnet device for applying a magnetic field in a direction perpendicular to the surface of the target has a linearly formed magnetic pole perpendicular to the scanning direction. It is arranged opposite to the target on the back side of the plate and reciprocates between the ends of the target. It is arranged at right angles to the scanning direction of both ends of the film forming chamber, and the negative height applied to the target is reduced. In this configuration, a control electrode to which an arbitrary voltage between a voltage and a ground potential is applied is arranged.

According to a fifth aspect of the present invention, there is provided a sputtering apparatus for a large-sized substrate, wherein the control electrodes disposed at both ends in the scanning direction of the magnet device according to the fourth aspect have a negative high voltage applied to the backing plate. In this configuration, the voltage is divided into a predetermined voltage by resistance division and applied.

According to a sixth aspect of the present invention, there is provided a sputtering apparatus for a large substrate, wherein the magnet device for applying a magnetic field in a direction perpendicular to the target surface has a magnetic pole formed in a straight line perpendicular to the scanning direction. It is arranged opposite to the target on the back of the plate, and as a configuration for reciprocating scanning between the ends of the target, the range where a vertical magnetic field is applied over the entire film formation area of the substrate is set as the scanning range, and the length of the target is And a length covering the shield electrodes disposed at positions where horizontal components of the electric field do not occur at both ends of the scanning range of the magnet device.

According to a seventh aspect of the present invention, there is provided a sputtering apparatus for a large substrate, wherein a portion of the target magnet device of the sixth aspect which exceeds the scanning range of the magnet apparatus is blasted.

According to an eighth aspect of the present invention, in the sputtering apparatus for a large substrate, the size of the target in the configuration of the sixth aspect is set to the scanning range of the magnet device, and the distance between the target and the shield electrode exceeding the scanning range is the same as that of the target. A dummy target whose surface is blasted with a material is attached to a backing plate.

According to a ninth aspect of the present invention, there is provided a sputtering apparatus for a large substrate, wherein the magnet device for applying a magnetic field in a direction perpendicular to the target surface has a linearly formed magnetic pole perpendicular to the scanning direction. It is arranged opposite to the target on the back of the plate, and reciprocating scanning is performed between the ends of the target.When scanning the magnet device, the negative high voltage applied to the backing plate causes the scanning position of the magnet device to When the constant power control is performed so that the supplied power is constant in the middle part of the film formation region, and the end of the product on which the two thin films are formed is scanned through the insulating film in the film formation region of the substrate. Is a configuration in which constant voltage control is performed to apply a constant voltage that does not exceed the average value of the applied voltages in the constant power control part in the middle part.

[0024]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 Embodiment 1
In order to solve the problem that a locally deeply eroded portion occurs at one of the ends of a target of a large substrate sputtering apparatus, a magnet apparatus disposed in the upper part of a film forming chamber according to the first embodiment is used. FIG. 1 shows a plan view of the configuration. FIG. 2 shows FIG.
FIG. 3 is a graph showing the scanning speed of both ends and the center of the magnet device of FIG. 1. Portions other than the magnet device have the same configuration as that of the conventional configuration shown in FIG. The magnet device of FIG. 1 is mounted on the backing plate 6 of the conventional device having the configuration shown in FIG. In the figure, 31 is a magnet device support frame, 31a, 31
Reference numerals b, 31c, and 31d denote stoppers provided inside the support frame 31 on both sides. 32 has magnetic poles formed linearly,
A magnet device arranged so that a magnetic field in the vertical direction is formed on the surface of the target 11 attached to the lower surface of the backing plate 6 in the upper part of the film forming chamber 1 having the configuration shown in FIG. , 32b are the other ends. 33 is a magnet support mechanism for rotatably supporting the magnet device 32, 34
Is a spring that supports the rotation direction of the magnet device so that the magnet device 32 gives a predetermined declination at the center of the magnet device support frame 31 and ends at a right angle to the scanning direction. Is a stopper for setting the angle of deviation. A scanning drive mechanism 36 reciprocally scans the magnet device 32.
a, a driving screw 36b, and a guide rod 36c for guiding the magnet device 32 to scan a plane parallel to the surface of the target 11.

The operation of the magnet device shown in FIG. 1 will be described with reference to FIGS. When the magnet device 32 is at the left end in the figure, as shown in FIG. 2A, the side of the magnet device 32 contacts the stoppers 31a and 31b, and is perpendicular to the direction of the drive screw 36b (scanning direction). It is in. When the scanning of the magnet device 32 starts, the spring 34 expands, and one end 32a of the magnet device 32 leaves the stopper 31a, and the other end 32b remains in contact with the stopper 31b for a certain period of time.
Is deflected, and becomes inclined as shown in FIG. 2 (b). In the middle part of the scan, scanning is performed with declination applied,
At the right end, the one end 32a of the magnet device 32 comes into contact with the stopper 31c as shown in FIG. 2D, and when the scanning further proceeds, the spring 34 is compressed, and the magnet device 3 as shown in FIG.
Stoppers 31c, 3 on the side surfaces of both end portions 32a, 32b
1d abuts and the magnet device 32 is oriented perpendicular to the drive shaft 36b. The state of the magnet device when the magnet device scans from the right end to the left end is shown in FIGS.
(B) In the state of (a), the scan returns to the left end, and the reciprocating scan is repeated between the left end and the right end.

One end 32a and the other end 32 of the magnet device 32
The scanning speed at each end of b is as shown in FIG. The central portion of the magnet device 32 reciprocates at a constant speed, and when scanning from the left end to the right end of the magnet device support frame 31, when one end 32 a of the magnet device 32 leaves the left end of the magnet device support frame 31, the center is at the center. The other end 32b is in a stopped state, and when the magnet device 32 is deflected, the magnet device 3
2 moves to the right end at a constant speed while the entirety is tilted. When the magnet device 32 reaches the right end, the one end 32a comes into contact with the stopper 31c and stops, and as the scanning proceeds, the other end 32b reaches the right end at twice the speed of the central portion. When scanning from the right end to the left end, the other end 3
When leaving the right end of the magnet device support frame 31, the speed of the magnet device support frame 31 is twice as fast as that of the center portion, and the one end portion 32a is in a stopped state. Move to the right end at a constant speed while maintaining it. When the magnet device 32 reaches the left end, the other end 32b stops, and as the scanning progresses, the one end 32a reaches the left end at twice the speed of the central portion.

When the magnet device 32 is configured in this manner, the magnet device 32 is not parallel to the shield electrode 7 even when the one end 32a of the magnet device 32 approaches the end of the magnet device support frame 31, and The other end 32b is farther from the shield electrode 7, and the number of charged particles moving due to the ExB drift is smaller than in the related art, thereby suppressing the phenomenon that a deep erosion occurs in the direction in which ions have moved. Also, one end 32a of the magnet device 32 in the direction opposite to the direction in which the charged particles move.
Is stopped, the target in the vicinity is exposed to plasma for a long time, and sputtering is performed. Therefore, even if the charged particle density is low, it erodes in the same manner as the other end portion 32b, and the film thickness of the substrate 10 also has a uniform distribution. In addition,
In the above description, the scanning direction of the magnet is shown in the configuration in which the left end precedes, but when the polarity of the magnetic pole is reversed, the right end precedes the scanning.

Embodiment 2 In the first embodiment, the magnet device 32 is configured such that the deflection angle can be obtained by the spring 34. In the second embodiment, the deflection angle of the magnet device 32 is synchronized with the reciprocating motion of the magnet device 32 by the stepping motor. The configuration is such that the deflection angle is controlled.

If the deflection angle of the magnet device 32 is controlled by synchronizing the stepping motor with the reciprocating motion, the magnet device 3
The second argument has the advantage that the relationship between the scanning position and the argument can be freely selected.

Embodiment 3 Embodiment 3 is applied to the backing plate at both ends of the film formation chamber in order to suppress the occurrence of a locally deep erosion portion of the target disposed on the upper surface in the film formation chamber of the large substrate sputtering apparatus. This is an embodiment in which a control electrode to which an intermediate voltage between a voltage and a ground potential is applied is provided. 4 and 5 show the configuration. FIG. 4 is a cross-sectional view showing the configuration of the film forming chamber, and FIG. 5 is an electric field distribution diagram at the end of the film forming chamber in FIG. In the figure, a susceptor 3, a mask 4, a backing plate 6, a shield electrode 7, a substrate 1
Reference numeral 0, a target 11 attached to the lower surface of the backing plate 6, and a power source 14 are the same members as those of the conventional film forming chamber shown in FIG. Reference numeral 41 denotes a control electrode disposed inside the shield electrode 7 at both ends of the film forming chamber, and is fixed to the mask 4 by fixing bolts 43a and 43b via an insulating member 42. Reference numeral 47 denotes a magnet device having magnetic poles formed in a direction perpendicular to the scanning direction.

The film forming chamber of the large substrate sputtering apparatus is constructed as shown in FIG. 4. For example, the control electrode 41 is supplied with a voltage of -700 V applied to the backing plate 6 and -400 V which is an intermediate voltage between ground potential and ground potential. When applied, the potential distribution becomes as shown in FIG. 5, and even when the magnet device 12 moves to the end of the target 11, the direction B of the magnetic field and the direction E of the electric field are substantially parallel, and the bias of the charged particles due to the ExB drift Is suppressed, and local erosion at the end of the target can be suppressed.

Embodiment 4 FIG. In the third embodiment, the control voltage of the control electrode 41 is configured to include the separate power supply 44.
In the fourth embodiment, although not shown, the control voltage applied to the control electrode is applied by dividing the voltage applied to the backing plate by resistance.

When the control voltage applied to the control electrode is applied by dividing the voltage applied to the backing plate by resistance, a control voltage power supply is not required, and the configuration of the device is simplified.

Embodiment 5 In the configuration of the fifth embodiment, the length of the film formation chamber and the length of the target are made longer than the length of the film formation region of the substrate, and the charged particles are turned to the shield electrode side at the turning end of the scan of the magnet device. In the case where a two-layered thin film pattern is formed via an insulating film at the end of the film formation region, the insulating film between the two-layered pattern may cause dielectric breakdown. This is an embodiment which addresses a certain problem. FIG. 6 shows the structure of the film forming chamber. In the figure, a susceptor 3, a mask 4, a backing plate 6, a shield electrode 7, and a substrate 10 are the same as those of the conventional configuration shown in FIG. The magnet device 47 is the same as that shown in FIG. 4 of the third embodiment. Reference numeral 51 denotes a target attached to the lower surface of the backing plate 6 so as to face the film formation region of the substrate. The target is longer than the film formation region of the substrate 10 and extends beyond the scanning region of the magnet device 47 at both ends. 51a
Is blasted on its surface using a blast material such as # 46 SiC. In the figure, X represents the film formation region of the substrate, and Y represents the scanning range of the magnet device 47. In this configuration, the scanning range Y of the magnet device 47 is set to the film formation area X of the substrate 10.
At the end of the scan, the same plasma state as in the middle part of the scan where no ExB drift occurs is obtained, and the position of the shield electrode 7 is set such that charged particles are not affected by the shield electrode 7 at the scan end of the magnet device 47. The configuration is a distance.

In the configuration of the film forming chamber shown in FIG. 6, for example, the film forming area X is 400 mm long and 500 m wide (scanning direction of the magnet device).
The specific dimensions for forming a thin film on a substrate of m
When sputtering is performed by setting the scanning range Y of the magnet device 47 to 580 mm, which is about 1.2 times the film forming area X of the substrate 10, and setting the size of the target 51 in the scanning direction of the magnet device 47 to 820 mm, Since the distance between the plasma P and the shield electrode 7 at the turn-around end of the scan of FIG.
The diffusion to the side is small, and the charged particle density in the plasma P does not decrease so much that the sputtering voltage hardly increases. Thus, an increase in the potential difference between the surface of the substrate 10 and the mask 4 is suppressed, and dielectric breakdown of the insulating film of the product pattern on the substrate 10 can be prevented. Further, the fact that the distance between the plasma P and the shield electrode 7 is large at the time of reaching the turning end of the scanning of the magnet device 47 means that the direction B of the magnetic field and the direction E of the electric field are substantially parallel, and the charge due to the ExB drift The bias of the particles is suppressed, and an increase in local erosion at the end of the target 51 is also suppressed.

In the configuration shown in FIG.
1a is not eroded because it is not sputtered, but the sputtered charged particles adhere to this portion to form a film,
This may peel off and affect the film formation portion of the substrate.
In order to prevent the film adhering to the surface of the end portion 51a of the target 51 from peeling off, blasting is performed with a # 46 SiC blast material or the like that provides good adhesion of the adhered matter to the surface of the end portion 51a of the target 51. By applying the method, the adhesion of the deposit can be improved and the detachment of the deposit can be prevented.

Embodiment 6 FIG. In the fifth embodiment, the end portion 51a of the target 51 having a longer lateral dimension is subjected to blast processing. However, the end portion 51a of the target 51 does not erode, so that it is not consumed, and the size of the target 51 is large. Things are needed. Embodiment 6 is different from FIG.
In this configuration, the target utilization rate is improved. FIG. 7 shows the configuration. FIG. 7 shows a configuration in which the target of FIG. 6 is divided into a portion necessary for plasma generation and a portion not scanned by the magnet device. 61 is the target, 6
Numerals 2 are dummy targets of the same material as the target 61 which are arranged at both ends of the target and are fixed to the backing plate 6 by bolts 63. The surface of the dummy target is # 46 SiC similarly to the end 51a of the target 51 in FIG. Blasted with blast material.

With this configuration, the size of the target 61 that is eroded and consumed each time sputtering is performed may be smaller than that in the case of FIG. 6 of the fifth embodiment. It can be used for a long time because it does not
The effect of improving the use efficiency of the target is obtained. The dummy target 62 may be made of a different material from the target as long as it is conductive and does not cause degassing, deformation, or deterioration even when heated to a high temperature in a vacuum.

Embodiment 7 In the seventh embodiment, when a two-layer thin film pattern is formed with an insulating film interposed therebetween, the insulating film between the two-layer pattern at the end portion of the film formation region is broken down. This is an embodiment corresponding to a certain problem. The method has a configuration in which the applied voltage to be applied to the target at the time when the magnet device is scanned at the end portion and at the time when the magnet device is at the center portion is distinguished. The sputtering apparatus is performed by the configuration shown in FIG. 6 of the fifth embodiment or FIG. 7 of the sixth embodiment. The magnet device 47 scans the film formation region of the substrate 10, scans the edge of the product on which the two-layer thin film pattern is formed via the insulating film at the end of the film formation region, and scans the center backing plate. The negative high voltage applied to 6 is discriminated, the power is controlled at a central portion during scanning so as to keep the power constant, and the power is applied, and two thin films are formed via the insulating film in the film formation region. FIG. 8 shows a voltage application waveform in which a constant voltage control for applying a constant voltage not exceeding the average voltage of the voltage applied to the center portion at the end of the product is performed with the voltage application waveform of the conventional device. . This voltage waveform is controlled at a constant power so as to have a substantially constant power in the scan of the center of the film formation region, and is applied at a constant power control in the center of the film formation region in the scan near the turning end of the scan. Indicates that a voltage lower than the average value is applied.

As described above, the voltage applied to the end of the film formation region of the substrate is applied at a lower voltage than the average value of the voltage applied to the center, and the constant voltage control is performed. At the edge of the film region, the sputter voltage is not changed even if the charged particles are diffused to the mask and the shield electrode when the horizontal component is included in the electric field due to the influence of the shield electrode. No dielectric breakdown of the insulating film occurs. In this case, since the sputtering power in the section where the constant voltage control is performed is smaller than the sputtering power in the central portion, it is necessary to adjust the scanning speed to be lower than the scanning speed in the central portion so as to have the same film thickness as the central portion. is there.

[0041]

According to a first aspect of the present invention, a sputtering apparatus for a large substrate includes a magnet device for applying a magnetic field in a vertical direction to the surface of the target, wherein a linearly formed magnetic pole faces the target, and The magnetic pole is rotated at a predetermined angle in the middle of scanning, rotates in accordance with scanning near the target end, and rotates in the scanning direction at the target end. The magnet device is configured so as to reciprocate while the target is placed, so that even if one end of the magnet device approaches the end of the magnet device support frame, the magnet device is Are not parallel, the other end of the magnet device is farther from the shield electrode, the movement of the number of charged particles due to ExB drift is smaller than before, and erosion of the target end is suppressed. In addition, since one end of the magnet device in the opposite direction to the movement of the charged particles is stopped, the target in the vicinity is exposed to the plasma for a long time, and the sputtering is performed. Therefore, even if the charged particle density is low, it erodes in the same manner as the other end, and the film thickness of the substrate also becomes a uniform distribution.

According to a second aspect of the present invention, a sputtering apparatus for a large substrate has a configuration in which the magnetic poles of the magnet device according to the first aspect are supported by springs in a rotating direction. Can be freely selected.

According to a third aspect of the present invention, there is provided a sputtering apparatus for a large substrate, wherein the magnetic pole of the magnet device according to the first aspect is rotated by a step motor, so that the magnet device moves to the end of the target. Direction B of the magnetic field
And the direction E of the electric field become substantially parallel, the bias of the charged particles due to the ExB drift is suppressed, and the local erosion of the end of the target can be suppressed.

According to a fourth aspect of the present invention, there is provided a sputtering apparatus for a large substrate, wherein the magnet device for applying a magnetic field in a direction perpendicular to the surface of the target has a magnetic pole formed in a straight line perpendicular to the scanning direction. It is arranged opposite to the target on the back side of the plate and reciprocates between the ends of the target. It is arranged at right angles to the scanning direction of both ends of the film forming chamber, and the negative height applied to the target is reduced. Since the control electrode to which an arbitrary voltage between the voltage and the ground potential is applied is arranged, the direction B of the magnetic field and the direction E of the electric field are substantially parallel even when the magnet device 12 moves to the end of the target. Therefore, the bias of the charged particles due to the ExB drift is suppressed, and the local erosion of the end of the target can be suppressed.

According to a fifth aspect of the present invention, there is provided a sputtering apparatus for a large substrate, wherein the control electrodes disposed at both ends in the scanning direction of the magnet device according to the fourth aspect have a negative high voltage applied to the backing plate. Since the configuration is such that the voltage is divided into a predetermined voltage by resistance division and applied, a control voltage power supply is not required, and the configuration of the device is simplified.

According to a sixth aspect of the present invention, there is provided a sputtering apparatus for a large substrate, wherein the magnet device for applying a magnetic field in a direction perpendicular to the target surface has a linearly formed magnetic pole perpendicular to the scanning direction. It is arranged opposite to the target on the back of the plate, and as a configuration for reciprocating scanning between the ends of the target, the range where a vertical magnetic field is applied over the entire film formation area of the substrate is set as the scanning range, and the length of the target is Since the length of the magnet device is set to cover between the shield electrodes arranged at positions where horizontal components of the electric field do not occur at both ends of the scanning range, the plasma P and the shield are shielded when the magnet device reaches the turning end of scanning. Since the distance between the electrodes 7 is large, the direction B of the magnetic field and the direction E of the electric field are substantially parallel, and the bias of the charged particles due to the ExB drift is suppressed. Increase localized erosion at the ends of Getto is suppressed.

The sputtering apparatus for large substrates according to claim 7 of the present invention has a configuration in which blasting is performed on a portion of the target magnet device having the configuration according to claim 6 which is beyond the scanning range of the magnet device. And the peeling off of the deposits can be prevented.

According to an eighth aspect of the present invention, in the sputtering apparatus for a large substrate, the size of the target according to the sixth aspect is set to the scanning range of the magnet device, and the distance between the target and the shield electrode exceeding the scanning range is the same as that of the target. A dummy target whose surface is blasted with a material is attached to the backing plate, so the target size can be small, and the dummy target at the end can be used for a long time because it does not wear out. Get better.

According to a ninth aspect of the present invention, there is provided a sputtering apparatus for a large substrate, wherein the magnet device for applying a magnetic field in a direction perpendicular to the target surface has a linearly formed magnetic pole perpendicular to the scanning direction. It is arranged opposite to the target on the back of the plate, and reciprocating scanning is performed between the ends of the target.When scanning the magnet device, the negative high voltage applied to the backing plate causes the scanning position of the magnet device to When the constant power control is performed so that the supplied power is constant in the middle part of the film formation region, and the end of the product on which the two thin films are formed is scanned through the insulating film in the film formation region of the substrate. Has a constant voltage control that applies a constant voltage that does not exceed the average value of the applied voltage in the constant power control part in the middle part, so when the magnet device comes to the end of the film formation area, the shield electrode Affected, Sputtering voltage does not change even charged particle when it contains horizontal component ready to diffuse into the mask and the shield electrode portion to a field, thereby preventing dielectric breakdown of the insulating film on the substrate occurs.

[Brief description of the drawings]

FIG. 1 is a plan view illustrating a configuration of a film formation chamber of Embodiment 1.

FIG. 2 is an explanatory diagram illustrating a scanning state of the magnet device of FIG. 1;

FIG. 3 is a graph showing scanning speeds at the center and both ends of the magnet device of FIG. 1;

FIG. 4 is a cross-sectional view illustrating a configuration of a film forming chamber portion according to a third embodiment.

5 is an electric field distribution diagram at an end of the film forming chamber in FIG.

FIG. 6 is a cross-sectional view illustrating a structure of a film formation chamber of Embodiment 5.

FIG. 7 is a cross-sectional view illustrating a structure of a film formation chamber according to a sixth embodiment.

FIG. 8 is a voltage waveform applied to the backing plate according to the seventh embodiment.

FIG. 9 is a sectional view of a configuration of a main part of a conventional large-sized substrate sputtering apparatus.

FIG. 10 is an overall configuration diagram of a conventional large substrate sputtering apparatus.

FIG. 11 is an explanatory view schematically showing a state of a sputtering operation in a film forming chamber of a conventional large substrate sputtering apparatus.

FIG. 12 is an explanatory view of an eroded state obtained by sputtering of a target attached to a conventional large substrate sputtering apparatus.

FIG. 13 is an explanatory view of a sputtering state when a magnet device of a conventional large substrate sputtering device is located at a central portion.

FIG. 14 is an explanatory diagram of a sputtering state when a magnet device of a conventional large substrate sputtering device is at an end.

FIG. 15 is an explanatory view of a sputtering state in the case of forming a two-layer thin film pattern on a substrate with an insulating film interposed therebetween in a conventional large substrate sputtering apparatus.

[Explanation of symbols]

31 magnet device support frame, 32 magnet device, 33 magnet support mechanism, 34 spring, 35 stopper, 36 creation operation mechanism, 41 control electrode, 42 fixing bolt, 44 control electrode power supply, 47 magnet device, 51 target, 61 target, 62 Dummy target, 63 fixing bolt.

Continued on the front page (72) Inventor Toshiya Sakata 997 Miyoshi, Nishigoshi-cho, Kikuchi-gun, Kumamoto Prefecture Inside Advanced Display Co., Ltd. (72) Inventor Toshio Araki 997 Miyoshi, Nishigoshi-cho, Kikuchi-gun, Kumamoto Prefecture Inside Advanced Display Co., Ltd.

Claims (9)

[Claims] A film forming chamber capable of maintaining a vacuum state inside;
A susceptor that is disposed below the inside of the film formation chamber and on which the substrate is mounted; a backing plate that seals the upper part of the film formation chamber and to which a negative high voltage is applied; and a target attached to the lower surface of the backing plate The magnetic pole formed in a straight line faces the target and is attached to be rotatable so as to rotate in a plane parallel to the target surface. The one end of the backing plate is attached at a predetermined angle so as to precede it, rotates in accordance with scanning near the target end, and is configured to be at a right angle to the scanning direction at the target end. And a shield arranged opposite to both of the scanning turn-back ends of the magnet unit. Large substrate for a sputtering apparatus according to claim. 2. The sputtering apparatus according to claim 1, wherein the magnetic pole of the magnet device is supported by a spring in a rotating direction. 3. The sputtering apparatus for a large substrate according to claim 1, wherein the magnetic pole of the magnet device is configured to be rotated by a step motor. 4. A film forming chamber whose inside can be maintained in a vacuum state,
A susceptor that is disposed below the inside of the film formation chamber and on which the substrate is mounted; a backing plate that seals the upper part of the film formation chamber and to which a negative high voltage is applied; and a target attached to the lower surface of the backing plate A magnet device arranged in a direction perpendicular to the scanning direction, arranged on the back surface of the backing plate, facing the target, and reciprocally scanning between the ends of the target; and the magnet device. Characterized in that the sputtering device has a control electrode which is disposed opposite to each of the scanning turn-back ends and is provided with an arbitrary voltage between a negative high voltage applied to the target and a ground potential. . 5. A method according to claim 1, wherein a negative high voltage applied to the backing plate is divided into a predetermined voltage by a resistance voltage divider and applied to the control electrodes arranged at both of the scanning turning ends of the magnet device. The sputtering device for a large substrate according to claim 4. 6. A film forming chamber whose inside can be maintained in a vacuum state,
A susceptor that is disposed below the inside of the film formation chamber and on which the substrate is mounted; a backing plate that seals the upper part of the film formation chamber and to which a negative high voltage is applied; and a target attached to the lower surface of the backing plate And a magnet device arranged so that a magnetic pole formed in a straight line faces the target in a direction perpendicular to the scanning direction, and a magnet device that reciprocally scans between the ends of the target. The scanning range is the range in which the vertical magnetic field is applied over the entire region, and the length of the target magnet device in the scanning direction is set at a position where no horizontal component of the electric field occurs at both ends of the scanning range of the magnet device. A large-sized substrate sputtering apparatus having a length to cover between the shield electrodes. 7. The sputtering apparatus for a large substrate according to claim 6, wherein blast processing is performed on a portion of the target magnet device that exceeds a scanning range of the magnet device. 8. The size of the target is set to the scanning range of the magnet device, and a dummy target whose surface is blasted with the same material as the target is attached to the backing plate between the target and the shield electrode exceeding the scanning range. 7. The sputtering apparatus for a large substrate according to claim 6, wherein: 9. A film forming chamber whose inside can be maintained in a vacuum state,
A susceptor on which a substrate is placed, which is disposed below the inside of the film formation chamber, a backing plate that seals the upper part of the film formation chamber and a negative high voltage is applied, and a target attached to the lower surface of the backing plate. A magnet device that is arranged in a direction perpendicular to the scanning direction with the magnetic pole formed in a straight line facing the target, and a magnet device that reciprocally scans the film formation region of the substrate, and a backing plate when scanning the magnet device. When the scanning position of the magnet device is in the middle of the film formation region of the substrate, the negative high voltage to be applied performs constant power control so that the supplied power is constant, and is applied via the insulating film in the film formation region of the substrate. When scanning the end of a product on which two layers of thin films are formed, a constant voltage is applied by applying a constant voltage that does not exceed the average value of the applied voltage of the constant power control in the middle part. Sputtering equipment for substrates.