JP2002158090A5 - Thin film forming apparatus and method for manufacturing light emitting device - Google Patents
Thin film forming apparatus and method for manufacturing light emitting device Download PDFInfo
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- JP2002158090A5 JP2002158090A5 JP2001272825A JP2001272825A JP2002158090A5 JP 2002158090 A5 JP2002158090 A5 JP 2002158090A5 JP 2001272825 A JP2001272825 A JP 2001272825A JP 2001272825 A JP2001272825 A JP 2001272825A JP 2002158090 A5 JP2002158090 A5 JP 2002158090A5
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- film
- conductive film
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- emitting device
- light
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- 238000004519 manufacturing process Methods 0.000 title description 9
- 239000010409 thin film Substances 0.000 title description 5
- 239000010408 film Substances 0.000 description 77
- 238000001771 vacuum deposition Methods 0.000 description 16
- 238000002161 passivation Methods 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005755 formation reaction Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000000737 periodic Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Description
【特許請求の範囲】
【請求項1】
第1の導電膜を真空蒸着法において第1のマスクを用いることにより第1のパターンに形成する第1の成膜室と、
第2の導電膜を真空蒸着法において第2のマスクを用いることにより第2のパターンに形成する第2の成膜室と、
有機膜を真空蒸着法において第3のマスクを用いることにより第3のパターンに形成する第3の成膜室と、
パッシベーション膜を真空蒸着法において第4のマスクを用いることにより第4のパターンに形成する第4の成膜室と、
透光性導電膜を形成する第5の成膜室とを有する薄膜形成装置であって、
前記第1の成膜室及び前記第2の成膜室は、CCDとX−Y−θステージによる位置合わせ機能をそれぞれ有し、
前記第1乃至前記第5の成膜室は、搬送室とそれぞれ連結され、
前記搬送室は、基板を搬送する手段を有し、
前記第1の導電膜、前記第2の導電膜、前記有機膜、前記パッシベーション膜、及び前記透光性導電膜は、大気中に曝すことなく形成されることを特徴とする薄膜形成装置。
【請求項2】
第1の導電膜を真空蒸着法において第1のマスクを用いることにより第1のパターンに形成する第1の成膜室と、
第2の導電膜を真空蒸着法において第2のマスクを用いることにより第2のパターンに形成する第2の成膜室と、
有機膜を真空蒸着法において第3のマスクを用いることにより第3のパターンに形成する第3の成膜室と、
パッシベーション膜を真空蒸着法において第4のマスクを用いることにより第4のパターンに形成する第4の成膜室と、
透光性導電膜をスパッタリング法により形成する第5の成膜室とを有する薄膜形成装置であって、
前記第1の成膜室及び前記第2の成膜室は、CCDとX−Y−θステージによる位置合わせ機能をそれぞれ有し、
前記第1乃至前記第5の成膜室は、それぞれゲートで仕切られ、かつ一方向に連結され、
前記第1の導電膜、前記第2の導電膜、前記有機膜、前記パッシベーション膜、及び前記透光性導電膜は、大気中に曝すことなく形成されることを特徴とする薄膜形成装置。
【請求項3】
請求項1または請求項2において、
前記第3の成膜室は、複数設けられており、複数の前記第3の成膜室は、それぞれ異なる有機膜を形成することを特徴とする薄膜形成装置。
【請求項4】
請求項1乃至請求項3のいずれか一において、
前記第2の導電膜を周期表の第1族または第2族の元素により形成することを特徴とする薄膜形成装置。
【請求項5】
請求項1乃至請求項4のいずれか一において、
前記マスクはメタルマスクであることを特徴とする薄膜形成装置。
【請求項6】
第1の導電膜を真空蒸着法により形成し、
前記第1の導電膜上に第2の導電膜を真空蒸着法により形成し、
前記第2の導電膜上に有機膜を真空蒸着法により形成し、
前記有機膜上にパッシベーション膜を真空蒸着法により形成し、
前記パッシベーション膜上に透光性導電膜をスパッタリング法により形成する発光装置の作製方法であって、
前記第1の導電膜、前記第2の導電膜及び前記有機膜は、マスクを用いてそれぞれ所定のパターンに形成され、
前記第1の導電膜、前記第2の導電膜、前記有機膜、前記パッシベーション膜、及び前記透光性導電膜は、大気中に曝すことなく形成されることを特徴とする発光装置の作製方法。
【請求項7】
請求項6において、
前記マスクとしてメタルマスクを用いたことを特徴とする発光装置の作製方法。
【請求項8】
第1の導電膜を真空蒸着法により形成し、
前記第1の導電膜上に第2の導電膜を真空蒸着法により形成し、
前記第2の導電膜上に有機膜を真空蒸着法により形成し、
前記有機膜上にパッシベーション膜を真空蒸着法により形成し、
前記パッシベーション膜上に透光性導電膜をスパッタリング法により形成する発光装置の作製方法であって、
前記第1の導電膜、前記第2の導電膜、前記有機膜、前記パッシベーション膜、及び前記透光性導電膜の形成は、減圧下で連続して処理され、
前記第1の導電膜、前記第2の導電膜、前記有機膜、前記パッシベーション膜、及び前記透光性導電膜は、大気中に曝すことなく形成されることを特徴とする発光装置の作製方法。
【請求項9】
請求項6乃至請求項8のいずれか一において、
前記第2の導電膜は、周期表の第1族または第2族の元素を用いて形成されることを特徴とする発光装置の作製方法。
【請求項10】
請求項6乃至請求項9のいずれか一において、
前記パッシベーション膜は、透過率が70%以上であり、かつ仕事関数が4.5〜5.5である金属元素を用いて形成されることを特徴とする発光装置の作製方法。
【請求項11】
請求項6乃至請求項10のいずれか一において、
前記透光性導電膜は、シート抵抗が50Ω/□以下であり、かつ透過率が70%以上である金属材料を用いて形成されることを特徴とする発光装置の作製方法。
[Claims]
(1)
A first deposition chamber in which a first conductive film is formed in a first pattern by using a first mask in a vacuum evaporation method;
A second film formation chamber for forming a second conductive film in a second pattern by using a second mask in a vacuum evaporation method;
A third film forming chamber for forming an organic film in a third pattern by using a third mask in a vacuum evaporation method;
A fourth film forming chamber for forming a passivation film in a fourth pattern by using a fourth mask in a vacuum evaporation method;
A fifth film formation chamber for forming a light-transmitting conductive film,
The first film forming chamber and the second film forming chamber have a positioning function using a CCD and an XY-θ stage, respectively.
The first to fifth film forming chambers are respectively connected to a transfer chamber,
The transfer chamber may have a means for transporting a substrate,
The thin film forming apparatus, wherein the first conductive film, the second conductive film, the organic film, the passivation film, and the light-transmitting conductive film are formed without being exposed to the air .
(2)
A first deposition chamber in which a first conductive film is formed in a first pattern by using a first mask in a vacuum evaporation method;
A second film formation chamber for forming a second conductive film in a second pattern by using a second mask in a vacuum evaporation method;
A third film forming chamber for forming an organic film in a third pattern by using a third mask in a vacuum evaporation method;
A fourth film forming chamber for forming a passivation film in a fourth pattern by using a fourth mask in a vacuum evaporation method;
A fifth film forming chamber for forming a light-transmitting conductive film by a sputtering method,
The first film forming chamber and the second film forming chamber have a positioning function using a CCD and an XY-θ stage, respectively.
The first to fifth film forming chambers are each partitioned by a gate and connected in one direction ,
The thin film forming apparatus, wherein the first conductive film, the second conductive film, the organic film, the passivation film, and the light-transmitting conductive film are formed without being exposed to the air .
(3)
In claim 1 or claim 2,
A plurality of the third film formation chambers are provided, and the plurality of the third film formation chambers form different organic films, respectively.
(4)
In any one of claims 1 to 3 ,
An apparatus for forming a thin film, wherein the second conductive film is formed from an element of Group 1 or Group 2 of the periodic table.
Claim 5.
In any one of claims 1 to 4 ,
The thin film forming apparatus, wherein the mask is a metal mask.
6.
Forming a first conductive film by a vacuum deposition method;
Forming a second conductive film on the first conductive film by a vacuum deposition method;
Forming an organic film on the second conductive film by a vacuum evaporation method;
Forming a passivation film on the organic film by a vacuum deposition method,
A method for manufacturing a light-emitting device, wherein a light-transmitting conductive film is formed over the passivation film by a sputtering method,
The first conductive film, the second conductive film, and the organic film are each formed in a predetermined pattern using a mask ,
The method for manufacturing a light-emitting device, wherein the first conductive film, the second conductive film, the organic film, the passivation film, and the light-transmitting conductive film are formed without exposure to the air. .
7.
In claim 6 ,
A method for manufacturing a light-emitting device, wherein a metal mask is used as the mask.
Claim 8.
Forming a first conductive film by a vacuum deposition method;
Forming a second conductive film on the first conductive film by a vacuum deposition method;
Forming an organic film on the second conductive film by a vacuum evaporation method;
Forming a passivation film on the organic film by a vacuum deposition method,
A method for manufacturing a light-emitting device, wherein a light-transmitting conductive film is formed over the passivation film by a sputtering method,
The formation of the first conductive film, the second conductive film, the organic film, the passivation film, and the light-transmitting conductive film is continuously performed under reduced pressure ;
The method for manufacturing a light-emitting device, wherein the first conductive film, the second conductive film, the organic film, the passivation film, and the light-transmitting conductive film are formed without exposure to the air. .
9.
In any one of claims 6 to 8 ,
The method for manufacturing a light-emitting device, wherein the second conductive film is formed using an element of Group 1 or Group 2 of the periodic table.
10.
In any one of claims 6 to 9 ,
The method for manufacturing a light-emitting device, wherein the passivation film is formed using a metal element having a transmittance of 70% or more and a work function of 4.5 to 5.5.
11.
In any one of claims 6 to 10 ,
The method for manufacturing a light-emitting device, wherein the light-transmitting conductive film is formed using a metal material having a sheet resistance of 50 Ω / □ or less and a transmittance of 70% or more.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2001272825A JP5159010B2 (en) | 2000-09-08 | 2001-09-10 | Method for manufacturing light emitting device |
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JP2000272547 | 2000-09-08 | ||
JP2000272547 | 2000-09-08 | ||
JP2000-272547 | 2000-09-08 | ||
JP2001272825A JP5159010B2 (en) | 2000-09-08 | 2001-09-10 | Method for manufacturing light emitting device |
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JP2002158090A JP2002158090A (en) | 2002-05-31 |
JP2002158090A5 true JP2002158090A5 (en) | 2008-10-09 |
JP5159010B2 JP5159010B2 (en) | 2013-03-06 |
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JP2001272825A Expired - Fee Related JP5159010B2 (en) | 2000-09-08 | 2001-09-10 | Method for manufacturing light emitting device |
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