JP5154605B2 - 強誘電体材料層の製造方法、薄膜トランジスタ及び圧電式インクジェットヘッド - Google Patents

強誘電体材料層の製造方法、薄膜トランジスタ及び圧電式インクジェットヘッド Download PDF

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Publication number
JP5154605B2
JP5154605B2 JP2010118857A JP2010118857A JP5154605B2 JP 5154605 B2 JP5154605 B2 JP 5154605B2 JP 2010118857 A JP2010118857 A JP 2010118857A JP 2010118857 A JP2010118857 A JP 2010118857A JP 5154605 B2 JP5154605 B2 JP 5154605B2
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JP
Japan
Prior art keywords
layer
ferroelectric material
precursor composition
thin film
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010118857A
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English (en)
Japanese (ja)
Other versions
JP2011249432A (ja
JP2011249432A5 (enExample
Inventor
達也 下田
永輔 ▲徳▼光
敏彦 金田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Japan Science and Technology Agency
National Institute of Japan Science and Technology Agency
Original Assignee
Seiko Epson Corp
Japan Science and Technology Agency
National Institute of Japan Science and Technology Agency
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2010118857A priority Critical patent/JP5154605B2/ja
Application filed by Seiko Epson Corp, Japan Science and Technology Agency, National Institute of Japan Science and Technology Agency filed Critical Seiko Epson Corp
Priority to KR1020127031785A priority patent/KR101442943B1/ko
Priority to TW100116093A priority patent/TWI514585B/zh
Priority to US13/696,551 priority patent/US9202895B2/en
Priority to PCT/JP2011/060581 priority patent/WO2011138958A1/ja
Priority to CN201180021920.6A priority patent/CN102870245B/zh
Publication of JP2011249432A publication Critical patent/JP2011249432A/ja
Publication of JP2011249432A5 publication Critical patent/JP2011249432A5/ja
Application granted granted Critical
Publication of JP5154605B2 publication Critical patent/JP5154605B2/ja
Priority to US14/531,723 priority patent/US9123752B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
JP2010118857A 2010-05-07 2010-05-24 強誘電体材料層の製造方法、薄膜トランジスタ及び圧電式インクジェットヘッド Expired - Fee Related JP5154605B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2010118857A JP5154605B2 (ja) 2010-05-24 2010-05-24 強誘電体材料層の製造方法、薄膜トランジスタ及び圧電式インクジェットヘッド
TW100116093A TWI514585B (zh) 2010-05-07 2011-05-06 A manufacturing method of a functional element, a thin film transistor, and a piezoelectric ink jet head
US13/696,551 US9202895B2 (en) 2010-05-07 2011-05-06 Process for production of functional device, process for production of ferroelectric material layer, process for production of field effect transistor, thin film transistor, field effect transistor, and piezoelectric inkjet head
PCT/JP2011/060581 WO2011138958A1 (ja) 2010-05-07 2011-05-06 機能性デバイスの製造方法、強誘電体材料層の製造方法、電界効果トランジスタの製造方法、並びに薄膜トランジスタ、電界効果トランジスタ、及び圧電式インクジェットヘッド
KR1020127031785A KR101442943B1 (ko) 2010-05-07 2011-05-06 기능성 디바이스의 제조방법, 강유전체 재료층의 제조방법, 전계 효과 트렌지스터의 제조방법, 및 박막 트랜지스터, 전계 효과 트렌지스터, 및 전압식 잉크젯 헤드
CN201180021920.6A CN102870245B (zh) 2010-05-07 2011-05-06 功能设备的制造方法、场效应晶体管和薄膜晶体管
US14/531,723 US9123752B2 (en) 2010-05-07 2014-11-03 Process for production of functional device, process for production of ferroelectric material layer, process for production of field effect transistor, thin film transistor, field effect transistor, and piezoelectric ink jet head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010118857A JP5154605B2 (ja) 2010-05-24 2010-05-24 強誘電体材料層の製造方法、薄膜トランジスタ及び圧電式インクジェットヘッド

Related Child Applications (1)

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JP2012265998A Division JP5575864B2 (ja) 2012-12-05 2012-12-05 強誘電体材料層の製造方法、薄膜トランジスタ及び圧電式インクジェットヘッド

Publications (3)

Publication Number Publication Date
JP2011249432A JP2011249432A (ja) 2011-12-08
JP2011249432A5 JP2011249432A5 (enExample) 2012-10-11
JP5154605B2 true JP5154605B2 (ja) 2013-02-27

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JP2010118857A Expired - Fee Related JP5154605B2 (ja) 2010-05-07 2010-05-24 強誘電体材料層の製造方法、薄膜トランジスタ及び圧電式インクジェットヘッド

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013093586A (ja) * 2012-12-05 2013-05-16 Japan Science & Technology Agency 強誘電体材料層の製造方法、薄膜トランジスタ及び圧電式インクジェットヘッド

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018074608A1 (ja) * 2016-10-21 2018-04-26 凸版印刷株式会社 薄膜トランジスタおよびその製造方法
CN113314614A (zh) * 2021-05-28 2021-08-27 电子科技大学 基于纳米压印法的氧化物薄膜晶体管器件及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07156414A (ja) * 1993-12-03 1995-06-20 Canon Inc インクジェット記録ヘッドの製造方法、インクジェット記録ヘッド、および記録装置
JP2000058837A (ja) * 1998-08-05 2000-02-25 Sanyo Electric Works Ltd 半導体素子及びその製造方法
JP3442069B2 (ja) * 2001-05-28 2003-09-02 松下電器産業株式会社 プラズマディスプレイパネル、その製造方法及び転写フィルム
JP4811551B2 (ja) * 2003-03-26 2011-11-09 セイコーエプソン株式会社 強誘電体膜の製造方法および強誘電体キャパシタの製造方法
US7989361B2 (en) * 2006-09-30 2011-08-02 Samsung Electronics Co., Ltd. Composition for dielectric thin film, metal oxide dielectric thin film using the same and preparation method thereof
JP4388544B2 (ja) * 2006-12-19 2009-12-24 セイコーエプソン株式会社 半導体装置の製造方法、電気光学装置および電子機器
JP2009166385A (ja) * 2008-01-17 2009-07-30 Seiko Epson Corp 液体噴射ヘッド及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013093586A (ja) * 2012-12-05 2013-05-16 Japan Science & Technology Agency 強誘電体材料層の製造方法、薄膜トランジスタ及び圧電式インクジェットヘッド

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