JP2014225531A - 電子デバイス、電子デバイスの製造方法 - Google Patents
電子デバイス、電子デバイスの製造方法 Download PDFInfo
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- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 239000002094 self assembled monolayer Substances 0.000 description 33
- 239000013545 self-assembled monolayer Substances 0.000 description 33
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 24
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- 238000002425 crystallisation Methods 0.000 description 14
- 230000008025 crystallization Effects 0.000 description 14
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 12
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- 238000001035 drying Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
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- ZGSOBQAJAUGRBK-UHFFFAOYSA-N propan-2-olate;zirconium(4+) Chemical compound [Zr+4].CC(C)[O-].CC(C)[O-].CC(C)[O-].CC(C)[O-] ZGSOBQAJAUGRBK-UHFFFAOYSA-N 0.000 description 4
- 238000002407 reforming Methods 0.000 description 4
- 239000007858 starting material Substances 0.000 description 4
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
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- 239000010936 titanium Substances 0.000 description 3
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- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- KQNKJJBFUFKYFX-UHFFFAOYSA-N acetic acid;trihydrate Chemical compound O.O.O.CC(O)=O KQNKJJBFUFKYFX-UHFFFAOYSA-N 0.000 description 2
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- RVYHLWKCEYFJBS-UHFFFAOYSA-N manganese(2+);propan-2-olate Chemical compound [Mn+2].CC(C)[O-].CC(C)[O-] RVYHLWKCEYFJBS-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 2
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910018921 CoO 3 Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 241000877463 Lanio Species 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910004121 SrRuO Inorganic materials 0.000 description 1
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- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000813 microcontact printing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- ZTILUDNICMILKJ-UHFFFAOYSA-N niobium(v) ethoxide Chemical compound CCO[Nb](OCC)(OCC)(OCC)OCC ZTILUDNICMILKJ-UHFFFAOYSA-N 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
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- 229910052703 rhodium Inorganic materials 0.000 description 1
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- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
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- 239000004332 silver Substances 0.000 description 1
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- 238000002174 soft lithography Methods 0.000 description 1
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- 238000006467 substitution reaction Methods 0.000 description 1
- -1 that is Substances 0.000 description 1
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/32—Processes for applying liquids or other fluent materials using means for protecting parts of a surface not to be coated, e.g. using stencils, resists
- B05D1/322—Removable films used as masks
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
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- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/02—Processes for applying liquids or other fluent materials performed by spraying
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- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
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- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
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- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
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- H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
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Abstract
【解決手段】基板と、
前記基板上に形成された複数の薄膜素子と、を備えており、
前記薄膜素子は、正の圧電効果、逆の圧電効果、電荷蓄積、半導体性、導電性から選択されたいずれかの機能の薄膜部を有しており、
前記複数の薄膜素子は、2以上の異なる機能の薄膜部を含むことを特徴とする電子デバイスを提供する。
【選択図】図10
Description
前記基板上に形成された複数の薄膜素子と、を備えており、
前記薄膜素子は、正の圧電効果、逆の圧電効果、電荷蓄積、半導体性、導電性から選択されたいずれかの機能の薄膜部を有しており、
前記複数の薄膜素子は、2以上の異なる機能の薄膜部を含むことを特徴とする電子デバイスを提供する。
20、100 電子デバイス
23、24、102、103 薄膜素子
231、241 薄膜部
Claims (10)
- 基板と、
前記基板上に形成された複数の薄膜素子と、を備えており、
前記薄膜素子は、正の圧電効果、逆の圧電効果、電荷蓄積、半導体性、導電性から選択されたいずれかの機能を備えた薄膜部を有しており、
前記複数の薄膜素子は、2以上の異なる機能の薄膜部を含むことを特徴とする電子デバイス。 - 前記薄膜素子は、正の圧電効果、逆の圧電効果、電荷蓄積から選択されたいずれかの機能を備えた薄膜部を有していることを特徴とする請求項1に記載の電子デバイス。
- 前記複数の薄膜素子は異なる材料組成の薄膜部を含むことを特徴とする請求項1または2に記載の電子デバイス。
- 前記薄膜部が、金属酸化物膜により構成されていることを特徴とする請求項1乃至3いずれか一項に記載の電子デバイス。
- 前記薄膜素子が、インクジェット法により形成される請求項1乃至4いずれか一項に記載の電子デバイス。
- 前記薄膜素子は、マルチノズルの液滴吐出ヘッドを用いて形成される請求項5に記載の電子デバイス。
- 前記複数の薄膜素子が、センサと、アクチュエータと、により構成されている請求項1乃至6いずれか一項に記載の電子デバイス。
- 前記複数の薄膜素子が、センサと、発電素子と、により構成されている請求項1乃至6いずれか一項に記載の電子デバイス。
- 前記複数の薄膜素子が、発電素子と、蓄電素子と、により構成されている請求項1乃至6いずれか一項に記載の電子デバイス。
- 基板上にマルチノズルの液滴吐出ヘッドを用いて、複数の薄膜素子を形成する工程を有しており、
前記薄膜素子は、正の圧電効果、逆の圧電効果、電荷蓄積、半導体性、導電性から選択されたいずれかの機能の薄膜部を有しており、
前記複数の薄膜素子は、2以上の異なる機能の薄膜部を含むことを特徴とする電子デバイスの製造方法。
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JP2013103357A JP6260108B2 (ja) | 2013-05-15 | 2013-05-15 | 電子デバイスの製造方法 |
US14/278,085 US20140340854A1 (en) | 2013-05-15 | 2014-05-15 | Electronic device and method of manufacturing the electronic device |
US15/094,256 US20160221033A1 (en) | 2013-05-15 | 2016-04-08 | Electronic device and method of manufacturing the electronic device |
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Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2016042566A (ja) | 2014-08-18 | 2016-03-31 | 株式会社リコー | 電気機械変換膜の製造方法、電気機械変換素子の製造方法、液体吐出ヘッド及び画像形成装置 |
JP6686444B2 (ja) | 2016-01-07 | 2020-04-22 | 株式会社リコー | Pzt膜積層構造体、液体吐出ヘッド、液体吐出ユニット、液体を吐出する装置及びpzt膜積層構造体の製造方法 |
JP6690253B2 (ja) | 2016-01-22 | 2020-04-28 | 株式会社リコー | Pzt前駆体溶液及びその製造方法、pzt膜の製造方法、電気機械変換素子の製造方法、液体吐出ヘッドの製造方法 |
US10105951B2 (en) | 2016-02-05 | 2018-10-23 | Ricoh Company, Ltd. | Liquid discharge apparatus, head drive control device, recording medium, and actuator drive control device |
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JP6555409B2 (ja) | 2016-03-03 | 2019-08-07 | 株式会社リコー | 液体吐出ヘッド、液体吐出ユニット、液体を吐出する装置 |
JP6720669B2 (ja) | 2016-04-22 | 2020-07-08 | 株式会社リコー | 電気機械変換装置、センサ、アクチュエータ、及びそれらの製造方法、液体吐出ヘッド、液体吐出ユニット、液体を吐出する装置 |
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US20160221033A1 (en) | 2016-08-04 |
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