JP5154481B2 - 青色発光蛍光体 - Google Patents
青色発光蛍光体 Download PDFInfo
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- JP5154481B2 JP5154481B2 JP2009056511A JP2009056511A JP5154481B2 JP 5154481 B2 JP5154481 B2 JP 5154481B2 JP 2009056511 A JP2009056511 A JP 2009056511A JP 2009056511 A JP2009056511 A JP 2009056511A JP 5154481 B2 JP5154481 B2 JP 5154481B2
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- blue light
- emitting phosphor
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims description 37
- 229910017639 MgSi Inorganic materials 0.000 claims description 27
- 239000013078 crystal Substances 0.000 claims description 26
- 239000000203 mixture Substances 0.000 claims description 21
- 238000002441 X-ray diffraction Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 17
- 239000000843 powder Substances 0.000 description 51
- 230000000052 comparative effect Effects 0.000 description 11
- 239000002994 raw material Substances 0.000 description 11
- 238000010304 firing Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 239000011777 magnesium Substances 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 229910052693 Europium Inorganic materials 0.000 description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 5
- 238000000295 emission spectrum Methods 0.000 description 5
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 238000012423 maintenance Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 229910052712 strontium Inorganic materials 0.000 description 5
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052770 Uranium Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 229910001631 strontium chloride Inorganic materials 0.000 description 3
- AHBGXTDRMVNFER-UHFFFAOYSA-L strontium dichloride Chemical compound [Cl-].[Cl-].[Sr+2] AHBGXTDRMVNFER-UHFFFAOYSA-L 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 101100496858 Mus musculus Colec12 gene Proteins 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910016523 CuKa Inorganic materials 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000007580 dry-mixing Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000012856 weighed raw material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/59—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing silicon
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
- C08G77/16—Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxyl groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
- C08G77/18—Polysiloxanes containing silicon bound to oxygen-containing groups to alkoxy or aryloxy groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Luminescent Compositions (AREA)
Description
従って、本発明の目的は、発光強度が高く、熱に対する安定性が高いSMS青色発光蛍光体を提供することにある。
結晶格子歪み(%)=────────────────────────── (II)
1/100×(180/π)×4×(2Ln2)1/2
但し、実施例1〜3及び実施例16は、本発明の実施例ではない。
SrCO3粉末(純度99.99質量%、平均粒子径2.73μm)、SrCl2粉末(純度99.99質量%)、SrF2粉末(純度99.5質量%)、塩基性MgCO3粉末(4MgCO3・Mg(OH)2・4H2O粉末、純度99.99質量%、平均粒子径11.08μm)、SiO2粉末(純度99.9質量%、平均粒子径3.87μm)、Eu2O3粉末(純度99.9質量%、平均粒子径2.71μm)をそれぞれ、下記表1に記載のモル量にて秤量した。なお、各原料粉末の平均粒子径は、いずれもレーザー回折散乱法により測定した値である。
────────────────────────────────────────
SrCO3 SrCl2 SrF2 塩基性MgCO3 SiO2 Eu2O3
(モル) (モル) (モル) (モル) (モル) (モル)
────────────────────────────────────────実施例1 2.9150 0.0750 0 0.2000 2.0000 0.0050
実施例2 2.9100 同上 同上 同上 同上 0.0075
実施例3 2.9000 同上 同上 同上 同上 0.0125
実施例4 2.8900 同上 同上 同上 同上 0.0175
実施例5 2.8550 同上 同上 同上 同上 0.0200
実施例6 2.8800 同上 同上 同上 同上 0.0225
実施例7 2.8750 同上 同上 同上 同上 0.0250
実施例8 2.8720 同上 同上 同上 同上 0.0265
実施例9 2.8650 同上 同上 同上 同上 0.0300
実施例10 2.8580 同上 同上 同上 同上 0.0355
実施例11 2.8500 同上 同上 同上 同上 0.0375
実施例12 2.8470 同上 同上 同上 同上 0.0390
実施例13 2.8450 同上 同上 同上 同上 0.0400
実施例14 2.8370 同上 同上 同上 同上 0.0440
実施例15 2.8350 同上 同上 同上 同上 0.0450
実施例16 2.8250 同上 同上 同上 同上 0.0500
────────────────────────────────────────比較例1 2.9200 同上 同上 同上 同上 0.0025
比較例2 2.8050 同上 同上 同上 同上 0.0600
比較例3 2.9250 0 0.0150 同上 同上 0.0300
────────────────────────────────────────
SMS青色発光蛍光体とX線回折用標準試料[NIST(National Institute of Standards and Technology)のLaB6粉末]のX線回折パターンを測定する。測定条件は、X線回折装置:X’PertProMPD、スペクトリス(株)製、X線:CuKα、検出器:X’Clelerator(モノクロメータ付)、管電圧:45kV、管電流:40mA、測定範囲:2θ=20〜130度、ステップサイズ:0.0167度、発散スリット:1/2度固定スリット、走査速度:25.06度/分とする。
SMS青色発光蛍光体と標準試料のX線折パターンから、X線回折装置に付属のソフトウェア[X’Pert Highscore Plus(Ver2.2)]を用いて、Le Bail法により結晶格子歪みを算出する。
SMS青色発光蛍光体に波長254nmの紫外線を照射して、発光スペクトルを測定する。得られた発光スペクトルの最大ピーク値を求め、これを初期発光強度とする。なお、表2中の値は、比較例3で得られたSMS青色発光蛍光体の初期発光強度を100とした相対値である。
SMS青色発光蛍光体を500℃の温度で1時間加熱した後、室温まで放冷する。放冷後のSMS青色発光蛍光体に波長254nmの紫外線を照射して、発光スペクトルを測定する。得られた発光スペクトルの最大ピーク値を求め、上記の初期発光強度に対する百分率を算出し、これを発光強度維持率とする。
────────────────────────────────────────
組成 結晶格子 初期発光 加熱処理後の 歪み(%) 強度 発光強度維持 率(%)
────────────────────────────────────────
実施例1 Sr2.990MgSi2O8:Eu0.010 0.052 112 93.5
実施例2 Sr2.985MgSi2O8:Eu0.015 0.052 115 93.0
実施例3 Sr2.975MgSi2O8:Eu0.025 0.052 121 93.9
実施例4 Sr2.965MgSi2O8:Eu0.035 0.041 157 94.0
実施例5 Sr2.960MgSi2O8:Eu0.040 0.041 170 95.3
実施例6 Sr2.955MgSi2O8:Eu0.045 0.035 171 95.1
実施例7 Sr2.950MgSi2O8:Eu0.050 0.036 179 98.2
実施例8 Sr2.947MgSi2O8:Eu0.053 0.031 183 96.5
実施例9 Sr2.940MgSi2O8:Eu0.060 0.036 187 96.0
実施例10 Sr2.933MgSi2O8:Eu0.067 0.037 174 96.0
実施例11 Sr2.925MgSi2O8:Eu0.075 0.042 167 95.4
実施例12 Sr2.922MgSi2O8:Eu0.078 0.039 164 95.5
実施例13 Sr2.920MgSi2O8:Eu0.080 0.044 157 95.0
実施例14 Sr2.912MgSi2O8:Eu0.088 0.045 155 94.0
実施例15 Sr2.910MgSi2O8:Eu0.090 0.044 154 93.0
実施例16 Sr2.900MgSi2O8:Eu0.100 0.049 136 88.0
────────────────────────────────────────
比較例1 Sr2.985MgSi2O8:Eu0.005 0.060 70 89.0
比較例2 Sr2.880MgSi2O8:Eu0.120 0.057 114 78.0
比較例3 Sr2.940MgSi2O8:Eu0.060 0.066 100 80.0
────────────────────────────────────────
注)組成は、原料粉末の配合量により算出した値である。
Claims (1)
- 組成式がSr3-xMgSi2O8:Eux(但し、xは0.033〜0.095の範囲の数値)で示され、メルウィナイトと同じ結晶構造を有し、CuKα線を用いて測定された2θが20〜130度の範囲にあるX線回折パターンからLe Bail法により求められる結晶格子歪みが0.045%以下である青色発光蛍光体。
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JP2009056511A JP5154481B2 (ja) | 2009-03-10 | 2009-03-10 | 青色発光蛍光体 |
KR1020100020837A KR101735100B1 (ko) | 2009-03-10 | 2010-03-09 | 청색 발광 형광체 |
CN201010139777.8A CN101831294B (zh) | 2009-03-10 | 2010-03-10 | 蓝色发光荧光体 |
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JP2009056511A JP5154481B2 (ja) | 2009-03-10 | 2009-03-10 | 青色発光蛍光体 |
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JP2010209206A JP2010209206A (ja) | 2010-09-24 |
JP5154481B2 true JP5154481B2 (ja) | 2013-02-27 |
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KR (1) | KR101735100B1 (ja) |
CN (1) | CN101831294B (ja) |
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JP5766454B2 (ja) * | 2011-02-01 | 2015-08-19 | 宇部マテリアルズ株式会社 | 青色発光蛍光体 |
JP5971620B2 (ja) * | 2011-02-28 | 2016-08-17 | 宇部興産株式会社 | 青色発光蛍光体及び該青色発光蛍光体を用いた発光装置 |
CN102344809A (zh) * | 2011-07-20 | 2012-02-08 | 彩虹集团公司 | 一种白光led荧光粉及其制备方法 |
US10538702B2 (en) | 2015-01-07 | 2020-01-21 | Ube Industries, Ltd. | Fluorescent material, light-emitting device, and method for producing fluorescent material |
JP6776556B2 (ja) * | 2016-03-02 | 2020-10-28 | 三菱ケミカル株式会社 | 蛍光体、発光装置、画像表示装置及び照明装置 |
WO2021186970A1 (ja) * | 2020-03-18 | 2021-09-23 | デンカ株式会社 | 蛍光体プレート、及び発光装置 |
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NL6714518A (ja) * | 1967-10-26 | 1969-04-29 | ||
JPS61174291A (ja) * | 1985-01-29 | 1986-08-05 | Sony Corp | 青色発光螢光体 |
JPS646078A (en) * | 1987-06-30 | 1989-01-10 | Asahi Chemical Ind | Static crushing agent |
JP4122752B2 (ja) * | 2001-10-30 | 2008-07-23 | 株式会社日立製作所 | 発光装置 |
TW200528537A (en) * | 2004-02-27 | 2005-09-01 | Sumitomo Chemical Co | Method for producing silicate phosphor and vacuum ultraviolet excited light-emitting devicemethod for producing silicate phosphor and vacuum ultraviolet excited light-emitting device |
JP2006012770A (ja) * | 2004-05-27 | 2006-01-12 | Hitachi Ltd | 発光装置及び該発光装置を用いた画像表示装置 |
US7902756B2 (en) * | 2006-02-07 | 2011-03-08 | Panasonic Corporation | Phosphor, light-emitting device, and plasma display panel |
KR101409603B1 (ko) * | 2006-05-18 | 2014-06-18 | 파나소닉 주식회사 | 규산염 청색 형광체의 제조 방법 및 규산염 청색 형광체 및발광 장치 |
JP2008050523A (ja) * | 2006-08-28 | 2008-03-06 | Hitachi Ltd | プラズマディスプレイ装置および発光装置 |
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CN101831294A (zh) | 2010-09-15 |
KR101735100B1 (ko) | 2017-05-12 |
KR20100102064A (ko) | 2010-09-20 |
CN101831294B (zh) | 2014-09-10 |
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