JP5142546B2 - 半導体装置及びその作製方法 - Google Patents

半導体装置及びその作製方法 Download PDF

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JP5142546B2
JP5142546B2 JP2007029316A JP2007029316A JP5142546B2 JP 5142546 B2 JP5142546 B2 JP 5142546B2 JP 2007029316 A JP2007029316 A JP 2007029316A JP 2007029316 A JP2007029316 A JP 2007029316A JP 5142546 B2 JP5142546 B2 JP 5142546B2
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film
insulating film
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island
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JP2008198647A5 (enExample
JP2008198647A (ja
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宏充 郷戸
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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JP2007029316A 2007-02-08 2007-02-08 半導体装置及びその作製方法 Active JP5142546B2 (ja)

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JP2007029316A JP5142546B2 (ja) 2007-02-08 2007-02-08 半導体装置及びその作製方法

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JP2007029316A JP5142546B2 (ja) 2007-02-08 2007-02-08 半導体装置及びその作製方法

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JP2008198647A JP2008198647A (ja) 2008-08-28
JP2008198647A5 JP2008198647A5 (enExample) 2010-02-25
JP5142546B2 true JP5142546B2 (ja) 2013-02-13

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8901615B2 (en) * 2012-06-13 2014-12-02 Synopsys, Inc. N-channel and P-channel end-to-end finfet cell architecture
US8723268B2 (en) 2012-06-13 2014-05-13 Synopsys, Inc. N-channel and P-channel end-to-end finFET cell architecture with relaxed gate pitch
CN117690344B (zh) * 2023-10-31 2024-10-15 惠科股份有限公司 可拉伸显示模组及显示装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2761496B2 (ja) * 1992-02-25 1998-06-04 株式会社 半導体エネルギー研究所 薄膜状絶縁ゲイト型半導体装置およびその作製方法
JPH08316487A (ja) * 1995-05-17 1996-11-29 Sanyo Electric Co Ltd 薄膜半導体装置の製造方法

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