JP2008198647A - 半導体装置及びその作製方法 - Google Patents
半導体装置及びその作製方法 Download PDFInfo
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Images
Abstract
【解決手段】半導体層33は、チャネル形成領域33aとソース領域又はドレイン領域として機能するn型を示す不純物領域33b、33cとに加えて、チャネル形成領域33aの下方、ここではチャネル形成領域33aの絶縁層32と接する側の表面付近にボロンが添加された不純物領域33dを有している。また、半導体層34は、チャネル形成領域34aとソース領域又はドレイン領域として機能するp型を示す不純物領域34b、34cとに加えて、チャネル形成領域34aの下方、ここではチャネル形成領域34aの絶縁層32と接する側の表面付近にボロンが添加された不純物領域34dを有している。
【選択図】図1
Description
本実施の形態では、移動度が高いPチャネル型TFTとS値が小さいNチャネル型TFTとを同一基板上に作製する半導体装置について説明する。
本実施の形態では、チャネル形成領域とソース領域又はドレイン領域との間に、ソース領域又はドレイン領域より低濃度に不純物が添加された領域(低濃度不純物領域ともいう)を有する半導体装置について図5〜6を用いて説明する。
本実施の形態では、実施の形態1〜2に示した構成の半導体装置を用いて基板上に回路を形成し、表示装置を作製する場合の例を示す。本実施の形態では、液晶表示装置の構成例を説明する。なお、本発明に係る半導体装置を利用した回路を搭載した表示装置は液晶表示装置に限らず、EL表示装置に適用することも可能である。
31 絶縁層
33 半導体層
34 半導体層
203 絶縁層
204 導電層
205 薄膜トランジスタ
33a チャネル形成領域
33b 不純物領域
33c 不純物領域
33d 不純物領域
34a チャネル形成領域
34b 不純物領域
34c 不純物領域
34d 不純物領域
Claims (8)
- 絶縁表面を有する基板上に形成された13族の元素が含有された第1の絶縁膜と、
前記第1の絶縁膜上に形成された第2の絶縁膜と、
前記第2の絶縁膜上に形成された複数の薄膜トランジスタと、を有し、
前記複数の薄膜トランジスタの少なくとも一つは、
13族の元素が添加されたチャネル形成領域と、第1の不純物元素が添加されたソース領域又はドレイン領域と、を有し、
前記複数の薄膜トランジスタの他の少なくとも一つは、
13族の元素が添加されたチャネル形成領域と、前記第1の不純物元素とは逆の導電型の第2の不純物元素が添加されたソース領域又はドレイン領域と、を有する半導体装置。 - 請求項1において、前記13族の元素はボロンである半導体装置。
- 13族の元素が含有された第1の絶縁膜と、
前記第1の絶縁膜上に形成された第2の絶縁膜と、
前記第2の絶縁膜上に形成された複数の薄膜トランジスタと、を有し、
前記複数の薄膜トランジスタの少なくとも一つは、
15族の元素が添加されたチャネル形成領域と、第1の不純物元素が添加されたソース領域又はドレイン領域と、を有し、
前記複数の薄膜トランジスタの他の少なくとも一つは、
15族の元素が添加されたチャネル形成領域と、前記第1の不純物元素とは逆の導電型の第2の不純物元素が添加されたソース領域又はドレイン領域と、を有する半導体装置。 - 請求項1乃至請求項3のいずれか一項において、
前記第1の不純物元素は15族の元素であり、前記第2の不純物元素は13族の元素である半導体装置。 - 絶縁表面を有する基板上に、第1の絶縁膜を形成し、
前記第1の絶縁膜に13族の元素を添加し、
前記第1の絶縁膜上に第2の絶縁膜を形成し、
前記第2の絶縁膜上に非晶質半導体膜を形成し、
前記非晶質半導体膜上にレーザビームを照射することにより、前記非晶質半導体膜を結晶化して結晶性半導体膜を形成するとともに、前記13族の元素を前記結晶性半導体膜中に拡散し、
前記結晶質半導体膜をエッチングして、少なくとも第1の島状半導体膜と第2の島状半導体膜を形成し、
前記第1の島状半導体膜に第1の不純物元素を添加して、ソース領域又はドレイン領域とチャネル形成領域とを形成し、
前記第2の島状半導体膜に前記第1の不純物元素とは逆の導電型の第2の不純物元素を添加して、ソース領域又はドレイン領域とチャネル形成領域とを形成し、
前記第1の島状半導体膜及び前記第2の島状半導体膜上に第3の絶縁膜を形成し、
前記第1の島状半導体膜上に前記第3の絶縁膜を介して第1のゲート電極を形成し、前記第2の島状半導体膜上に前記第3の絶縁膜を介して第2のゲート電極を形成する半導体装置の作製方法。 - 請求項5において、前記13族の元素としてボロンを用いる半導体装置の作製方法。
- 絶縁表面を有する基板上に、第1の絶縁膜を形成し、
前記第1の絶縁膜に15族の元素を添加し、
前記第1の絶縁膜上に第2の絶縁膜を形成し、
前記第2の絶縁膜上に非晶質半導体膜を形成し、
前記非晶質半導体膜上にレーザビームを照射することにより、前記非晶質半導体膜を結晶化して結晶性半導体膜を形成するとともに、前記15族の元素を前記結晶性半導体膜中に拡散し、
前記結晶質半導体膜をエッチングして、少なくとも第1の島状半導体膜と第2の島状半導体膜を形成し、
前記第1の島状半導体膜に第1の不純物元素を添加して、ソース領域又はドレイン領域とチャネル形成領域とを形成し、
前記第2の島状半導体膜に前記第1の不純物元素とは逆の導電型の第2の不純物元素を添加して、ソース領域又はドレイン領域とチャネル形成領域とを形成し、
前記第1の島状半導体膜及び前記第2の島状半導体膜上に第3の絶縁膜を形成し、
前記第1の島状半導体膜上に前記第3の絶縁膜を介して第1のゲート電極を形成し、前記第2の島状半導体膜上に前記第3の絶縁膜を介して第2のゲート電極を形成する半導体装置の作製方法。 - 請求項5乃至請求項7のいずれか一項において、
前記第1の不純物元素として15族の元素を用い、前記第2の不純物元素として13族の元素を用いる半導体装置の作製方法。
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WO2013188416A1 (en) * | 2012-06-13 | 2013-12-19 | Synopsys, Inc. | N-channel and p-channel end-to-end finfet cell architecture with relaxed gate pitch |
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KR101729909B1 (ko) | 2012-06-13 | 2017-04-25 | 시놉시스, 인크. | 완화된 게이트 피치를 갖는 n 채널 및 p 채널 종단 대 종단 핀펫 셀 아키텍쳐들을 위한 집적 회로, 기능 셀 라이브러리를 제조하는 방법, 데이터 프로세싱 시스템 및 메모리 |
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