JP5141368B2 - 有機el素子検査リペア方法 - Google Patents
有機el素子検査リペア方法 Download PDFInfo
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- JP5141368B2 JP5141368B2 JP2008128283A JP2008128283A JP5141368B2 JP 5141368 B2 JP5141368 B2 JP 5141368B2 JP 2008128283 A JP2008128283 A JP 2008128283A JP 2008128283 A JP2008128283 A JP 2008128283A JP 5141368 B2 JP5141368 B2 JP 5141368B2
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- organic
- light emission
- region
- inspection
- fluorescence
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- 238000000034 method Methods 0.000 title claims description 19
- 238000007689 inspection Methods 0.000 title description 48
- 230000008439 repair process Effects 0.000 title description 28
- 230000002950 deficient Effects 0.000 claims description 35
- 230000007547 defect Effects 0.000 claims description 10
- 230000001678 irradiating effect Effects 0.000 claims description 9
- 238000001514 detection method Methods 0.000 description 6
- 239000003102 growth factor Substances 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000000593 degrading effect Effects 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/861—Repairing
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Testing Of Optical Devices Or Fibers (AREA)
- Electroluminescent Light Sources (AREA)
Description
2 陽極
3 陰極
4 有機EL層
5 正孔
6 電子
7 異物
9 電源
10 検査リペア装置
11 紫外線レーザー
12 出力調整機構
13,14 ハーフミラー
15 XYZ可動ステージ
16 リーク発光検出カメラ
17 画像処理ユニット
18 制御ユニット
19 蛍光観測ユニット
20 被検査体の発光面
21 リーク発光領域
22 蛍光検査の不良領域
23 レーザー照射領域
24a,24b,24c,24d 蛍光検査の不良領域のレーザー照射第1領域
25a,25b,25c 蛍光検査の不良領域のレーザー照射第2領域
26 リーク発光領域のレーザー照射領域
27 配線
28 駆動回路
29 レーザー光
E 被検査体
Claims (1)
- 陽極及び陰極で挟持された有機EL層からなる有機EL素子に対し、陰極に比べ陽極の電圧を高くする電圧極性の順バイアス、あるいは陰極の電圧を陽極よりも高くする電圧極性の逆バイアスを印加した際の前記有機EL素子の不具合により発生するリーク発光の発光領域を検出する工程と、前記検出された発光領域の周辺に第1の紫外線レーザー光を選択的に照射する工程と、前記第1の紫外線レーザー光の照射時に前記有機EL素子発光面の発光強度が所定の発光強度と異なる領域を不良領域と判断する工程と、前記発光領域および前記不良領域に第2の紫外線レーザー光を照射する工程とからなることを特徴とする有機EL素子検査リペア方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008128283A JP5141368B2 (ja) | 2008-05-15 | 2008-05-15 | 有機el素子検査リペア方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2008128283A JP5141368B2 (ja) | 2008-05-15 | 2008-05-15 | 有機el素子検査リペア方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009277528A JP2009277528A (ja) | 2009-11-26 |
JP5141368B2 true JP5141368B2 (ja) | 2013-02-13 |
Family
ID=41442765
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Application Number | Title | Priority Date | Filing Date |
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JP2008128283A Active JP5141368B2 (ja) | 2008-05-15 | 2008-05-15 | 有機el素子検査リペア方法 |
Country Status (1)
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JP (1) | JP5141368B2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5690333B2 (ja) | 2010-04-27 | 2015-03-25 | パナソニック株式会社 | 有機el表示装置の検査方法 |
KR101323257B1 (ko) | 2010-12-27 | 2013-10-30 | 주식회사 미르기술 | 엘이디 부품 형광체 높이 검사장치 |
KR101775177B1 (ko) * | 2011-04-12 | 2017-09-05 | 가부시키가이샤 제이올레드 | 유기 el 소자의 제조 방법 및 레이저 초점 위치 설정 방법 |
US9112187B2 (en) | 2011-06-08 | 2015-08-18 | Joled Inc. | Organic el device and method of manufacturing organic EL device |
KR102109000B1 (ko) * | 2017-05-19 | 2020-05-12 | 주성엔지니어링(주) | 유기 발광 소자 및 이의 제조 방법 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10321367A (ja) * | 1997-05-23 | 1998-12-04 | Tdk Corp | 有機elディスプレイの評価装置および評価方法 |
JP2002260857A (ja) * | 2000-12-28 | 2002-09-13 | Semiconductor Energy Lab Co Ltd | 発光装置の作製方法および薄膜形成装置 |
JP2003257652A (ja) * | 2002-03-06 | 2003-09-12 | Sanyo Electric Co Ltd | エレクトロルミネセンス素子の製造方法 |
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2008
- 2008-05-15 JP JP2008128283A patent/JP5141368B2/ja active Active
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