JP5139059B2 - プラズマ処理システムにおけるエッチング耐性を最適にする方法 - Google Patents
プラズマ処理システムにおけるエッチング耐性を最適にする方法 Download PDFInfo
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- JP5139059B2 JP5139059B2 JP2007519252A JP2007519252A JP5139059B2 JP 5139059 B2 JP5139059 B2 JP 5139059B2 JP 2007519252 A JP2007519252 A JP 2007519252A JP 2007519252 A JP2007519252 A JP 2007519252A JP 5139059 B2 JP5139059 B2 JP 5139059B2
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- 238000012545 processing Methods 0.000 title claims description 69
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- 239000000758 substrate Substances 0.000 claims description 60
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- 230000008569 process Effects 0.000 claims description 49
- 239000000203 mixture Substances 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
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- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910010272 inorganic material Inorganic materials 0.000 claims description 2
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- 229910052734 helium Inorganic materials 0.000 description 10
- 239000000460 chlorine Substances 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
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- 230000000873 masking effect Effects 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 6
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- 239000000463 material Substances 0.000 description 5
- 229910003902 SiCl 4 Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
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- 229920000642 polymer Polymers 0.000 description 3
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- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
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- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
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- 238000004381 surface treatment Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
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- 241001634884 Cochlicopa lubricella Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
Description
Claims (6)
- プラズマ処理チャンバを含むプラズマ処理システムにおいて、基板の加工処理工程における処理の選択性を改善する方法であって、
処理ガス混合物と親和性を有するプレコートガス混合物を前記プラズマ処理チャンバ内に流入させる工程と、
前記プレコートガス混合物の第一プラズマを照射する工程と、
前記基板を前記プラズマ処理チャンバに導入する工程と、
前記プラズマ処理チャンバ内に処理ガス混合物を流入させる工程と、
前記処理ガス混合物の第二プラズマを照射する工程と、
前記第二プラズマにより前記基板をエッチングと積層の少なくとも1つを実施する工程と、
を含み、
前記第一プラズマが、前記プラズマ処理チャンバ内の表面にプレコート膜を形成して、前記第二プラズマ中の少なくともいくらかの量のラジカルを引きつけるように構成されており、
前記プレコートガス混合物が、CH2F2とCF4との混合物で構成されており、
前記プレコートガス混合物を流入させる前に、ウエハのない状態で前記プラズマ処理チャンバを清浄化する工程を有していることを特徴とする処理の選択性を改善する方法。 - 前記処理ガス混合物が、エッチング種を含んでおり、
前記プレコート膜が、保護膜形成種を形成するために前記エッチング種と化学的に反応し、
前記保護膜形成種が前記基板の少なくとも一部を被覆する請求項1記載の方法。 - 前記処理の選択性が、フォトレジストのエッチングの選択性である請求項1記載の方法。
- 前記処理の選択性が、BARCのエッチングの選択性である請求項1記載の方法。
- 前記処理の選択性が、無機材料のエッチングの選択性である請求項1記載の方法。
- 前記処理の選択性が、シリコンのエッチングの選択性である請求項1記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/883,282 | 2004-06-30 | ||
US10/883,282 US7316785B2 (en) | 2004-06-30 | 2004-06-30 | Methods and apparatus for the optimization of etch resistance in a plasma processing system |
PCT/US2005/021047 WO2006011996A2 (en) | 2004-06-30 | 2005-06-14 | Methods and apparatus for the optimization of etch resistance in a plasma processing system |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012199346A Division JP5567084B2 (ja) | 2004-06-30 | 2012-09-11 | プラズマ処理システムにおけるエッチング耐性を最適にする方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008505490A JP2008505490A (ja) | 2008-02-21 |
JP2008505490A5 JP2008505490A5 (ja) | 2008-07-03 |
JP5139059B2 true JP5139059B2 (ja) | 2013-02-06 |
Family
ID=35512818
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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JP2007519252A Active JP5139059B2 (ja) | 2004-06-30 | 2005-06-14 | プラズマ処理システムにおけるエッチング耐性を最適にする方法 |
JP2012199346A Active JP5567084B2 (ja) | 2004-06-30 | 2012-09-11 | プラズマ処理システムにおけるエッチング耐性を最適にする方法 |
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JP2012199346A Active JP5567084B2 (ja) | 2004-06-30 | 2012-09-11 | プラズマ処理システムにおけるエッチング耐性を最適にする方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7316785B2 (ja) |
JP (2) | JP5139059B2 (ja) |
KR (1) | KR101233453B1 (ja) |
CN (1) | CN101263092A (ja) |
TW (1) | TWI389196B (ja) |
WO (1) | WO2006011996A2 (ja) |
Families Citing this family (15)
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US8546264B2 (en) * | 2005-06-02 | 2013-10-01 | The Regents Of The University Of California | Etching radical controlled gas chopped deep reactive ion etching |
US7906032B2 (en) * | 2006-03-31 | 2011-03-15 | Tokyo Electron Limited | Method for conditioning a process chamber |
US8501627B2 (en) * | 2007-09-27 | 2013-08-06 | Lam Research Corporation | Profile control in dielectric etch |
US8298958B2 (en) | 2008-07-17 | 2012-10-30 | Lam Research Corporation | Organic line width roughness with H2 plasma treatment |
CN101930921B (zh) * | 2009-06-25 | 2012-09-26 | 中芯国际集成电路制造(上海)有限公司 | 提高栅极尺寸均匀性的方法 |
JP5450187B2 (ja) * | 2010-03-16 | 2014-03-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
JP2012015343A (ja) * | 2010-07-01 | 2012-01-19 | Hitachi High-Technologies Corp | プラズマエッチング方法 |
TWI458011B (zh) * | 2010-10-29 | 2014-10-21 | Macronix Int Co Ltd | 蝕刻多層硬式幕罩的方法 |
US8420947B2 (en) | 2010-12-30 | 2013-04-16 | Globalfoundries Singapore Pte. Ltd. | Integrated circuit system with ultra-low k dielectric and method of manufacture thereof |
JP5956933B2 (ja) | 2013-01-15 | 2016-07-27 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
US9412606B2 (en) * | 2014-02-14 | 2016-08-09 | Taiwan Semiconductor Manufacturing Company Limited | Target dimension uniformity for semiconductor wafers |
JP6169666B2 (ja) * | 2015-10-20 | 2017-07-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
JP6568457B2 (ja) * | 2015-11-11 | 2019-08-28 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
US9941123B1 (en) * | 2017-04-10 | 2018-04-10 | Lam Research Corporation | Post etch treatment to prevent pattern collapse |
WO2019138654A1 (ja) * | 2018-10-26 | 2019-07-18 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理方法 |
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JPH0828348B2 (ja) * | 1991-02-07 | 1996-03-21 | ヤマハ株式会社 | ドライエッチング方法 |
JPH04313223A (ja) * | 1991-04-04 | 1992-11-05 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
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-
2004
- 2004-06-30 US US10/883,282 patent/US7316785B2/en active Active
-
2005
- 2005-06-14 JP JP2007519252A patent/JP5139059B2/ja active Active
- 2005-06-14 KR KR1020077002286A patent/KR101233453B1/ko active IP Right Grant
- 2005-06-14 WO PCT/US2005/021047 patent/WO2006011996A2/en active Application Filing
- 2005-06-14 CN CNA2005800276665A patent/CN101263092A/zh active Pending
- 2005-06-29 TW TW094121944A patent/TWI389196B/zh active
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2012
- 2012-09-11 JP JP2012199346A patent/JP5567084B2/ja active Active
Also Published As
Publication number | Publication date |
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KR20070033010A (ko) | 2007-03-23 |
JP5567084B2 (ja) | 2014-08-06 |
TWI389196B (zh) | 2013-03-11 |
JP2008505490A (ja) | 2008-02-21 |
US7316785B2 (en) | 2008-01-08 |
TW200614369A (en) | 2006-05-01 |
US20060000797A1 (en) | 2006-01-05 |
CN101263092A (zh) | 2008-09-10 |
JP2012253386A (ja) | 2012-12-20 |
WO2006011996A2 (en) | 2006-02-02 |
WO2006011996A3 (en) | 2007-04-19 |
KR101233453B1 (ko) | 2013-02-14 |
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