JP5139054B2 - メゾ多孔性金属酸化物薄膜を含む色素増感太陽電池用の光電極及びその製造方法 - Google Patents
メゾ多孔性金属酸化物薄膜を含む色素増感太陽電池用の光電極及びその製造方法 Download PDFInfo
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- JP5139054B2 JP5139054B2 JP2007341221A JP2007341221A JP5139054B2 JP 5139054 B2 JP5139054 B2 JP 5139054B2 JP 2007341221 A JP2007341221 A JP 2007341221A JP 2007341221 A JP2007341221 A JP 2007341221A JP 5139054 B2 JP5139054 B2 JP 5139054B2
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- 229910044991 metal oxide Inorganic materials 0.000 title claims description 88
- 150000004706 metal oxides Chemical class 0.000 title claims description 88
- 239000010409 thin film Substances 0.000 title claims description 81
- 238000004519 manufacturing process Methods 0.000 title description 17
- 239000000758 substrate Substances 0.000 claims description 76
- 239000010408 film Substances 0.000 claims description 33
- 239000002105 nanoparticle Substances 0.000 claims description 33
- 239000000243 solution Substances 0.000 claims description 29
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 21
- 239000012702 metal oxide precursor Substances 0.000 claims description 18
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 claims description 15
- 239000010936 titanium Substances 0.000 claims description 15
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 12
- 239000002904 solvent Substances 0.000 claims description 12
- 239000011777 magnesium Substances 0.000 claims description 10
- 239000010955 niobium Substances 0.000 claims description 10
- RGZQGGVFIISIHZ-UHFFFAOYSA-N strontium titanium Chemical compound [Ti].[Sr] RGZQGGVFIISIHZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 229920000642 polymer Polymers 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 7
- 239000004094 surface-active agent Substances 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052772 Samarium Inorganic materials 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000011230 binding agent Substances 0.000 claims description 5
- 239000008151 electrolyte solution Substances 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 229910052746 lanthanum Inorganic materials 0.000 claims description 5
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 229910052758 niobium Inorganic materials 0.000 claims description 5
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 5
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims description 5
- 229910052706 scandium Inorganic materials 0.000 claims description 5
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 5
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052712 strontium Inorganic materials 0.000 claims description 5
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 5
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 5
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 16
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 12
- 235000019441 ethanol Nutrition 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 11
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 7
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
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- 239000011248 coating agent Substances 0.000 description 5
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- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 239000012327 Ruthenium complex Substances 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 2
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
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- 238000005406 washing Methods 0.000 description 2
- NOGBEXBVDOCGDB-NRFIWDAESA-L (z)-4-ethoxy-4-oxobut-2-en-2-olate;propan-2-olate;titanium(4+) Chemical compound [Ti+4].CC(C)[O-].CC(C)[O-].CCOC(=O)\C=C(\C)[O-].CCOC(=O)\C=C(\C)[O-] NOGBEXBVDOCGDB-NRFIWDAESA-L 0.000 description 1
- FXPLCAKVOYHAJA-UHFFFAOYSA-N 2-(4-carboxypyridin-2-yl)pyridine-4-carboxylic acid Chemical compound OC(=O)C1=CC=NC(C=2N=CC=C(C=2)C(O)=O)=C1 FXPLCAKVOYHAJA-UHFFFAOYSA-N 0.000 description 1
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- JMXKSZRRTHPKDL-UHFFFAOYSA-N titanium ethoxide Chemical compound [Ti+4].CC[O-].CC[O-].CC[O-].CC[O-] JMXKSZRRTHPKDL-UHFFFAOYSA-N 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Description
伝導性基板と、
前記基板の一面に形成された金属酸化物を含むメゾ多孔性金属酸化物薄膜と、
前記メゾ多孔性金属酸化物薄膜上に形成された属酸化物ナノ粒子を含み表面に感光性色素が吸着された多孔質膜とを含む、
色素増感太陽電池用の光電極を提供する。
(b)前記基板の一面に金属酸化物を含むメゾ多孔性薄膜を形成する段階;
(c)前記メゾ多孔性薄膜層上に金属酸化物ナノ粒子を含む多孔質膜を形成する段階;及び
(d)前記多孔質膜の表面に感光性色素を吸着させる段階
を含む、色素増感太陽電池用の光電極の製造方法を提供する。
(a)光電極用伝導性基板を用意する段階;(b)前記基板の一面に金属酸化物を含むメゾ多孔性薄膜を形成する段階;(c)前記メゾ多孔性薄膜層上に金属酸化物ナノ粒子を含む多孔質膜を形成する段階;及び(d)前記多孔質膜の表面に感光性色素を吸着させる段階を含むことが好ましく、各段階について説明すれば、次の通りであります。
まず、本発明による光電極の製造方法は、光電極用伝導性基板を用意する段階を経る。
本発明は、前記伝導性基板の一面にメゾ多孔性金属酸化物薄膜を形成する段階を行う。
前記メゾ多孔性薄膜層上に金属酸化物ナノ粒子を含む多孔質膜を形成する段階を行う。
最後に、前記多孔質膜の表面に感光性色素を吸着させる段階を経て光電極を製造する。
第1電極の製造
エタノール11.6mLに界面活性剤としてのF127 1.174gを攪拌しながら溶解させた。これとは別途に、エタノール6mLに塩酸3mL及びチタンイソプロポキシド(TTiP)6mLを溶かした溶液を前で得られた界面活性剤溶液に徐々に加えて混合した後、3時間ゆっくり攪拌してゾルゲル溶液を製造した。
対極用基板としてFTOがコートされたガラス基板を用意し、この基板の伝導面側を接着テープで1.5cm2の面積にマスキングした後、H2PtCl6溶液をスピンコーターでコートし、接着テープを除去してから500℃で30分間熱処理して対極である第2電極を製造した。
前記で製造した光電極と対極との間にLiI(0.5M)及びI(0.05M)を含むアセトニトリル(acetonitrile)電解質を注入し、縫合して色素増感太陽電池を製造した。
実施例1によって形成されたメゾ多孔性酸化チタン薄膜層上に、追加的に0.05モル濃度のチタンビス(エチルアセトアセタト)ジイソプロポキシド(Titanium(IV)bis(ethylacetoacetato)diisopropoxide)溶液(溶媒:エチルアルコール)をスピンコーター(2000rpm)を塗布した後、500℃で20分間熱処理して遮断層を形成したことを除いては、実施例1と同様な方法によって色素増感太陽電池を製造した。
第1電極の製造過程において、メゾ多孔性酸化チタン薄膜層を形成しないことを除いては、実施例1と同様な方法によって色素増感太陽電池を製造した。
第1電極の製造過程において、メゾ多孔性酸化チタン薄膜層を形成しないことを除いては、実施例2と同様な方法によって色素増感太陽電池を製造した。
実施例1の方法によって得られたメゾ多孔性酸化チタン薄膜の表面と側面を各々透過電子顕微鏡(TEM)と走査電子顕微鏡(SEM)を用いて観察した(図3及び図4)。
メゾ多孔性酸化チタン薄膜形成が透光度を向上させることを確認するために、実施例1と2で得られた薄膜の透光度を、メゾ多孔性酸化チタン薄膜を有していない比較例1と2で得られた薄膜の透光度とともに測定した。その結果を図5に示す。
実施例1と2及び比較例1と2で製造した色素増感太陽電池の各々に対して、下記の方法によって開放電圧、光電流密度、エネルギー変換効率(energy conversion efficiency)、及び充填係数(fill factor)を測定した。その結果を表1に示す。
開放電圧と光電流密度はKeithley SMU2400を用いて測定した。
エネルギー変換効率の測定には1.5AM 100mW/cm2のソーラーシミュレーター(Xeランプ[300W、Oriel]、AM1.5 フィルター、及びKeithley SMU2400からなる)を用い、充填係数は前記で得た変換効率及び下記数学式を用いて計算した。
14:多孔性金属酸化物薄膜、15:遮断層、20:対極、22:第2基板、
26:電解質注入孔、30:電解質、40:高分子接着剤層。
Claims (4)
- 伝導性基板と、
前記基板の一面に形成された金属酸化物を含む、金属酸化物前駆体、界面活性剤、及び塩酸を含むアルコールゾルゲル溶液を用いて形成されたメゾ多孔性金属酸化物薄膜と、
前記メゾ多孔性金属酸化物薄膜上に形成された、平均厚さ1〜5,000nmの遮断層と、
前記遮断層上に金属酸化物ナノ粒子、バインダー用高分子及び溶媒を含む金属酸化物ナノ粒子ペーストを用いて形成され、平均粒径が1〜500nmである金属酸化物ナノ粒子を含み表面に感光性色素が吸着された多孔質膜と
を含み、
前記遮断層は、前記メゾ多孔性金属酸化物薄膜上に形成された金属酸化物を含む、金属酸化物前駆体及び溶媒を含む金属酸化物前駆体溶液を用いて形成され、かつ電解質溶液と前記基板の直接接触を防ぐ機能を有する、色素増感太陽電池用の光電極。 - 前記メゾ多孔性金属酸化物薄膜及び前記多孔質膜に含まれる金属酸化物が、チタン(Ti)酸化物、ジルコニウム(Zr)酸化物、ストロンチウム(Sr)酸化物、亜鉛(Zn)酸化物、インジウム(In)酸化物、ランタン(La)酸化物、バナジウム(V)酸化物、モリブデン(Mo)酸化物、タングステン(W)酸化物、スズ(Sn)酸化物、ニオブ(Nb)酸化物、マグネシウム(Mg)酸化物、アルミニウム(Al)酸化物、イットリウム(Y)酸化物、スカンジウム(Sc)酸化物、サマリウム(Sm)酸化物、ガリウム(Ga)酸化物、及びストロンチウムチタン(SrTi)酸化物からなる群から選ばれる1種以上であることを特徴とする、請求項1に記載の色素増感太陽電池用の光電極。
- 前記メゾ多孔性金属酸化物薄膜の平均厚さが1〜5,000nmであることを特徴とする、請求項1に記載の色素増感太陽電池用の光電極。
- 光電極と、前記光電極と互いに対向するように配置された対極と、前記二つの電極間に充填された電解質溶液とを含む色素増感太陽電池であって、
前記光電極が請求項1ないし3のいずれか一項に記載の光電極であることを特徴とする、色素増感太陽電池。
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| KR101089935B1 (ko) * | 2009-08-11 | 2011-12-05 | 주식회사 엘 앤 에프 | 염료감응형 태양전지 및 그 제조방법 |
| JP2011142028A (ja) * | 2010-01-08 | 2011-07-21 | Hitachi Zosen Corp | 色素増感太陽電池におけるバッファ層の形成方法 |
| KR20110083011A (ko) * | 2010-01-13 | 2011-07-20 | 삼성코닝정밀소재 주식회사 | 염료감응형 태양전지용 전극기판과 이를 구비하는 염료감응형 태양전지 |
| KR101034657B1 (ko) | 2010-02-25 | 2011-05-16 | 주식회사 하나디에스 | 금속전극 염료 태양전지 및 그 제조 방법 |
| KR101166515B1 (ko) | 2010-02-26 | 2012-07-20 | 인하대학교 산학협력단 | 염료감응 태양전지용 광전극, 상기 광전극의 제조 방법 및 상기 광전극을 포함하는 염료감응 태양전지 |
| KR101669953B1 (ko) * | 2010-03-26 | 2016-11-09 | 삼성전자 주식회사 | 산화물 박막, 산화물 박막의 형성 방법 및 산화물 박막을 포함하는 전자 소자 |
| JP2011248629A (ja) * | 2010-05-27 | 2011-12-08 | Meihan Shinku Kogyo Kk | 透明導電性基材 |
| KR101160929B1 (ko) * | 2010-06-14 | 2012-07-02 | 서강대학교산학협력단 | 화학용액성장법을 이용한 광전극의 제조 방법, 이에 의한 광전극 및 염료감응형 태양전지 |
| KR101047476B1 (ko) | 2010-06-15 | 2011-07-07 | 한국과학기술연구원 | 초임계유체 또는 아임계유체를 이용한 양자점 감응형 태양전지의 제조방법 및 이에 따라 제조되는 양자점 감응형 태양전지 |
| KR101013433B1 (ko) | 2010-06-17 | 2011-02-14 | 주식회사 카이네틱에너지 | 광투과성, 오염방지기능 및 자기세정성이 향상된 태양전지 모듈 및 이를 이용한 건물일체형 태양광 발전시스템 |
| KR101129965B1 (ko) | 2010-06-28 | 2012-03-26 | 현대하이스코 주식회사 | 차단층을 포함하는 광전극 제조 방법 및 상기 광전극을 이용한 염료감응 태양전지의 제조 방법 |
| KR101212101B1 (ko) * | 2011-04-22 | 2012-12-18 | 영동테크윈 주식회사 | 염료 감응 태양전지 및 그의 제조 방법 |
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| US10079320B2 (en) | 2012-05-18 | 2018-09-18 | Oxford University Innovation Limited | Optoelectronic device comprising perovskites |
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| EP2850627B1 (en) | 2012-05-18 | 2016-04-06 | Isis Innovation Limited | Optoelectronic device comprising porous scaffold material and perovskites |
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| EP1589548A1 (en) * | 2004-04-23 | 2005-10-26 | Sony Deutschland GmbH | A method of producing a porous semiconductor film on a substrate |
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| JP5135737B2 (ja) * | 2006-08-28 | 2013-02-06 | 東洋製罐株式会社 | 色素増感型太陽電池 |
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| JP2008166288A (ja) | 2008-07-17 |
| EP1942511A3 (en) | 2011-09-21 |
| KR100838158B1 (ko) | 2008-06-13 |
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