JP5133254B2 - キャリアガスによって物質を移送するためのバブラー - Google Patents
キャリアガスによって物質を移送するためのバブラー Download PDFInfo
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- 239000012159 carrier gas Substances 0.000 title claims description 56
- 239000000463 material Substances 0.000 title claims description 24
- 239000000126 substance Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 16
- 239000007787 solid Substances 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 7
- 150000002902 organometallic compounds Chemical class 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 4
- 238000004891 communication Methods 0.000 claims description 3
- 239000012530 fluid Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000011148 porous material Substances 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 239000012876 carrier material Substances 0.000 claims 1
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 230000001788 irregular Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 25
- 239000002243 precursor Substances 0.000 description 23
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 21
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 238000012546 transfer Methods 0.000 description 6
- 125000002524 organometallic group Chemical group 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- 238000007654 immersion Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000005465 channeling Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000012705 liquid precursor Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HBCLZMGPTDXADD-UHFFFAOYSA-N C[Zn](C)C Chemical compound C[Zn](C)C HBCLZMGPTDXADD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Description
図1に示されている逆流バブラーを使用してキャリアガス内の固体トリメチルインジウムの移送効率を調べた。当該バブラーを種々の条件下で試験し、当該バブラーが安定したEpisonガス濃度分析計の読みを提供する条件を常に記録した。データは、バブラーの圧力、圧力コントローラの圧力及びEpisonガス濃度分析計の読みを記録するトレンドビュー(Trendview)レコーダによって収集した。各流速に対するデータを中断することなく2時間に亘って記録した。Episonガス濃度分析計の読み取り誤差は±0.005であり、圧力の読み取り誤差は±3ミリバールであった。
添付図面の図10は、本発明の第二の実施形態によるバブラーを示している。簡素化のために、図1〜2cに関して既に説明した同じ特徴は同じ参照符号を付与されている。図1〜2cに関して上記した穴開き円板14の存在に加えて、バブラーには二重の空洞20,22が設けられている。内側空洞22は、外側空洞20によって包囲されている当該バブラーの浸漬脚部を備えている。
Claims (32)
- 物質を包含することができる封止可能な容器を備えているバブラーであり、前記容器は、
内面を備えた壁と、
当該容器内へ及び当該容器からキャリアガスを給送するための入口及び出口と、
前記容器内へと延びており且つ基部を備えており、前記入口及び出口が接続されている導管と、
前記入口と出口との間に配置されて前記導管に取り付けられた部材であって、外周と所定の間隔で1平方センチメートル当たり約5乃至25個の範囲で設けられた複数の穴とを備えており、前記容器の横断方向の全断面に亘って延びている、部材と、
内側及び外側の空洞であって、内側の空洞が前記導管によって形成されており、前記外側の空洞が前記容器によって形成されている、前記内側及び外側の空洞と、を備えている、ことを特徴とするバブラー。 - 請求項1に記載のバブラーであり、
前記容器が細長い円柱形状であることを特徴とするバブラー。 - 請求項1又は2に記載のバブラーであり、
前記部材が非多孔性材料によって作られていることを特徴とするバブラー。 - 請求項3に記載のバブラーであり、
前記部材が金属によって作られていることを特徴とするバブラー。 - 請求項4に記載のバブラーであり、
前記部材がステンレス鋼によって作られていることを特徴とするバブラー。 - 請求項1乃至5のうちのいずれか一の項に記載のバブラーであり、
前記部材が前記容器の長手軸線を横切る方向に延びていることを特徴とするバブラー。 - 請求項2乃至6のうちのいずれか一の項に記載のバブラーであり、
前記部材の外周が前記容器の壁の内面に隣接しているか又は接触していることを特徴とするバブラー。 - 請求項1乃至7のうちのいずれか一の項に記載のバブラーであり、
前記部材がほぼ平らであることを特徴とするバブラー。 - 請求項1乃至8のうちのいずれか一の項に記載のバブラーであり、
前記部材が、前記容器のほぼ全断面を横切って延びていることを特徴とするバブラー。 - 請求項1乃至9のうちのいずれか一の項に記載のバブラーであり、
前記部材が前記導管から外方へ延びていることを特徴とするバブラー。 - 請求項10に記載のバブラーであり、
前記部材が前記導管の基部から延びていることを特徴とするバブラー。 - 請求項10又は11に記載のバブラーであり、
前記部材が前記導管に溶接されていることを特徴とするバブラー。 - 請求項1乃至12のうちのいずれか一の項に記載のバブラーであり、
前記穴がランダムな又は不規則なパターンで配列されていることを特徴とするバブラー。 - 請求項1乃至13のうちのいずれか一の項に記載のバブラーであり、
前記穴が幾何学的パターン又は規則的なパターンで配列されていることを特徴とするバブラー。 - 請求項14に記載のバブラーであり、
前記穴が一連の同心円状に配列されていることを特徴とするバブラー。 - 請求項1乃至15のうちのいずれか一の項に記載のバブラーであり、
前記部材が、1平方センチメートル当たり約10〜約20個の範囲で分布せしめられた複数の穴を備えていることを特徴とするバブラー。 - 請求項1乃至16のうちのいずれか一の項に記載のバブラーであり、
前記穴の各々の直径が約0.5mm未満であることを特徴とするバブラー。 - 請求項17に記載のバブラーであり、
前記穴の各々の直径が約0.1mm〜約0.2mmであることを特徴とするバブラー。 - 請求項1に記載のバブラーであり、
前記部材が前記内側及び外側の空洞を横切る方向に延びていることを特徴とするバブラー。 - 請求項1〜19のうちのいずれか一の項に記載のバブラーであり、
前記内側及び外側の空洞が、前記内側空洞の直径が前記外側空洞の直径の約1/3である筒状であることを特徴とするバブラー。 - 請求項20に記載のバブラーであり、
前記内側の空洞の直径が少なくとも約20mmであることを特徴とするバブラー。 - 請求項20又は21に記載のバブラーであり、
前記外側の空洞の直径が少なくとも約75mmであることを特徴とするバブラー。 - 請求項1〜22のうちのいずれか一の項に記載のバブラーであり、
前記入口が前記外側の空洞に接続されており、前記出口が前記内側の空洞に接続されていることを特徴とするバブラー。 - 請求項1〜23のうちのいずれか一の項に記載のバブラーであり、
前記内側の空洞と外側の空洞との両方が物質の少なくとも一部分を保持する構造とされており、前記物質がキャリアガス内で搬送されるようになされていることを特徴とするバブラー。 - 請求項1〜24のうちのいずれか一の項に記載のバブラーであり、
前記内側の空洞と外側の空洞との両方が物質の少なくとも一部分を保持する構造とされており、前記外側の空洞内の物質の前記内側の空洞内の物質に対する割合が5〜7:1の範囲内であることを特徴とするバブラー。 - 物質を包含することができる封止可能な容器を備えているバブラーであり、
前記容器は、キャリアガスを当該容器内へ及び当該容器から給送するための入口及び出口を備えており、前記入口は、当該容器内へと延びている外側空洞に接続されており、前記出口は、前記外側空洞内の内側空洞に接続されており、前記内側空洞と外側空洞とは流体連通しており、前記内側空洞と外側空洞とのうちの少なくとも一方における前記入口と前記出口との間には、前記容器の全断面を横切って延びている部材が設けられており、該部材は、1平方センチメートル当たり約5〜約25個の範囲の所定の間隔を隔てて設けられた複数の穴を有していることを特徴とするバブラー。 - 反応器位置へと物質を搬送する方法であり、
請求項1に記載のバブラーを準備することと、
前記バブラーの前記容器内へキャリアガスを導入するステップと、
前記キャリアガスを、容器内に設けられた前記容器の全断面を横切って延びている部材内に所定の間隔を隔てて設けられ且つ1平方センチメートル当たり約5〜約25個の範囲で分布せしめられた穴内を通すステップと、
前記キャリアガスを前記物質中に通して前記キャリアガスと物質との混合物を提供するステップと、
キャリアガスと前記物質との混合物を反応器位置へと給送するステップとを含む方法。 - 請求項27の記載の方法であり、
前記キャリアガスが、前記穴内を通される前に、前記物質を包含している外側空洞内を通されることを特徴とする方法。 - 請求項28の記載の方法であり、
前記キャリアガスは、次いで、前記キャリアガスと物質との混合物を反応器位置へ給送される前に、更に別の物質を包含している内側空洞内を通されることを特徴とする方法。 - 物質を包含することができる封止可能な容器を備えてキャリアガスによって物質を給送するためのバブラーであり、前記封止可能な容器が、
内面を備えた壁を有する外側空洞と、
当該外側空洞内に少なくとも部分的に配置されている内側空洞であり、当該内側空洞と前記外側空洞とは相互に流体連通しており、当該内側空洞と前記外側空洞とは長手軸線を中心にほぼ同心状である前記内側空洞と、
前記封止可能な容器へ前記キャリアガスを給送するための入口と、
前記封止可能な容器から物質及びキャリアガスを給送するための出口と、
外周を有し且つ当該外周が前記外側空洞の壁の内面に隣接するか又は接触するように前記長手軸線を横切って配向されているほぼ平らな穴が開けられた円板であって、所定の間隔で設けられ且つ1平方センチメートル当たり約5乃至約25個の範囲で分布せしめられた複数の穴を有し、当該穴の各々の直径が約0.5ミリメートル未満であり、当該バブラー内にキャリアガスを分散させることができる、前記穴が開けられた円板と、
当該穴が開けられた円板に側面が結合されることにより空洞を規定しているほぼ平らな中実の円板と、を備えたバブラー。 - 請求項1〜26及び30のうちのいずれか一項に記載のバブラーを、液体又は固体の有機金属化合物の給送のために使用する方法。
- 請求項31に記載のバブラーを、有機金属化合物の給送のために使用する方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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GB0523429A GB2432371B (en) | 2005-11-17 | 2005-11-17 | Improved bubbler for the transportation of substances by a carrier gas |
GB0523429.9 | 2005-11-17 | ||
PCT/GB2006/003801 WO2007057631A2 (en) | 2005-11-17 | 2006-10-12 | Improved bubbler for the transportation of substances by a carrier gas |
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JP2009516079A JP2009516079A (ja) | 2009-04-16 |
JP5133254B2 true JP5133254B2 (ja) | 2013-01-30 |
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US (1) | US8272626B2 (ja) |
EP (1) | EP1951930B1 (ja) |
JP (1) | JP5133254B2 (ja) |
KR (1) | KR101303271B1 (ja) |
CN (1) | CN101310042B (ja) |
GB (1) | GB2432371B (ja) |
TW (1) | TWI331054B (ja) |
WO (1) | WO2007057631A2 (ja) |
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US7601225B2 (en) | 2002-06-17 | 2009-10-13 | Asm International N.V. | System for controlling the sublimation of reactants |
GB2432371B (en) | 2005-11-17 | 2011-06-15 | Epichem Ltd | Improved bubbler for the transportation of substances by a carrier gas |
US20070254093A1 (en) * | 2006-04-26 | 2007-11-01 | Applied Materials, Inc. | MOCVD reactor with concentration-monitor feedback |
US20070254100A1 (en) * | 2006-04-26 | 2007-11-01 | Applied Materials, Inc. | MOCVD reactor without metalorganic-source temperature control |
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GB2432371A (en) | 2007-05-23 |
CN101310042B (zh) | 2011-06-29 |
US8272626B2 (en) | 2012-09-25 |
TWI331054B (en) | 2010-10-01 |
JP2009516079A (ja) | 2009-04-16 |
EP1951930A2 (en) | 2008-08-06 |
GB2432371B (en) | 2011-06-15 |
US20080251016A1 (en) | 2008-10-16 |
TW200719949A (en) | 2007-06-01 |
KR20080075186A (ko) | 2008-08-14 |
WO2007057631A2 (en) | 2007-05-24 |
GB0523429D0 (en) | 2005-12-28 |
EP1951930B1 (en) | 2013-07-10 |
KR101303271B1 (ko) | 2013-09-03 |
WO2007057631A3 (en) | 2008-05-29 |
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