JP5124359B2 - 透過イメージセンシングのためのデバイスおよび方法 - Google Patents

透過イメージセンシングのためのデバイスおよび方法 Download PDF

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Publication number
JP5124359B2
JP5124359B2 JP2008162663A JP2008162663A JP5124359B2 JP 5124359 B2 JP5124359 B2 JP 5124359B2 JP 2008162663 A JP2008162663 A JP 2008162663A JP 2008162663 A JP2008162663 A JP 2008162663A JP 5124359 B2 JP5124359 B2 JP 5124359B2
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Japan
Prior art keywords
aerial image
substrate
image
object mark
projection system
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JP2008162663A
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English (en)
Japanese (ja)
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JP2009081414A (ja
Inventor
モエスト，ベアラッチ
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エーエスエムエル ネザーランズ ビー．ブイ．
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Priority to NL1035629A priority Critical patent/NL1035629A1/nl
Publication of JP2009081414A publication Critical patent/JP2009081414A/ja
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G03F7/70666—Aerial image, i.e. measuring the image of the patterned exposure light at the image plane of the projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706847—Production of measurement radiation, e.g. synchrotron, free-electron laser, plasma source or higher harmonic generation [HHG]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2008162663A 2007-06-29 2008-06-23 透過イメージセンシングのためのデバイスおよび方法 Active JP5124359B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
NL1035629A NL1035629A1 (nl) 2007-06-29 2008-06-25 Device and method for transmission image sensing.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/819,958 2007-06-29
US11/819,958 US20090002656A1 (en) 2007-06-29 2007-06-29 Device and method for transmission image detection, lithographic apparatus and mask for use in a lithographic apparatus

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012237385A Division JP5670985B2 (ja) 2007-06-29 2012-10-29 透過イメージセンシングのためのデバイスおよび方法

Publications (2)

Publication Number Publication Date
JP2009081414A JP2009081414A (ja) 2009-04-16
JP5124359B2 true JP5124359B2 (ja) 2013-01-23

Family

ID=40159985

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2008162663A Active JP5124359B2 (ja) 2007-06-29 2008-06-23 透過イメージセンシングのためのデバイスおよび方法
JP2012237385A Active JP5670985B2 (ja) 2007-06-29 2012-10-29 透過イメージセンシングのためのデバイスおよび方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2012237385A Active JP5670985B2 (ja) 2007-06-29 2012-10-29 透過イメージセンシングのためのデバイスおよび方法

Country Status (5)

Country Link
US (3) US20090002656A1 (enExample)
JP (2) JP5124359B2 (enExample)
KR (1) KR100965616B1 (enExample)
CN (1) CN101344731B (enExample)
TW (1) TWI451201B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090002656A1 (en) * 2007-06-29 2009-01-01 Asml Netherlands B.V. Device and method for transmission image detection, lithographic apparatus and mask for use in a lithographic apparatus
US8988653B2 (en) 2009-08-20 2015-03-24 Asml Netherlands B.V. Lithographic apparatus, distortion determining method, and patterning device
US20110222041A1 (en) * 2010-03-12 2011-09-15 Canon Kabushiki Kaisha Apparatus, method, and lithography system
US10041997B2 (en) 2014-03-13 2018-08-07 Fei Efa, Inc. System and method for fault isolation by emission spectra analysis
US9903824B2 (en) 2014-04-10 2018-02-27 Fei Efa, Inc. Spectral mapping of photo emission
CA2924160A1 (en) * 2016-03-18 2017-09-18 Chaji, Reza Maskless patterning
US10168758B2 (en) 2016-09-29 2019-01-01 Intel Corporation Techniques to enable communication between a processor and voltage regulator
NL2021472A (en) * 2017-09-20 2019-03-26 Asml Netherlands Bv Radiation Source
NL2022157A (en) 2018-01-04 2019-07-10 Asml Netherlands Bv Optical measurement method and sensor apparatus
KR102722920B1 (ko) 2019-04-18 2024-10-28 삼성전자주식회사 진공 챔버용 계측 장치, 및 그 계측 장치를 포함한 계측 시스템
TWI849631B (zh) * 2022-12-21 2024-07-21 群光電子股份有限公司 光學感測裝置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6787789B2 (en) * 2001-08-23 2004-09-07 Asml Netherlands B.V. Method of measuring aberration of a projection system of a lithographic apparatus, device manufacturing method, and device manufactured thereby
JP2003218024A (ja) * 2001-11-16 2003-07-31 Nikon Corp 計測方法、結像特性調整方法、露光方法及び露光装置の製造方法
US7092069B2 (en) * 2002-03-08 2006-08-15 Carl Zeiss Smt Ag Projection exposure method and projection exposure system
KR100585476B1 (ko) * 2002-11-12 2006-06-07 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조방법
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1510870A1 (en) 2003-08-29 2005-03-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI263859B (en) * 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP2005311020A (ja) * 2004-04-21 2005-11-04 Nikon Corp 露光方法及びデバイス製造方法
US7308368B2 (en) 2004-09-15 2007-12-11 Asml Netherlands B.V. Method and apparatus for vibration detection, method and apparatus for vibration analysis, lithographic apparatus, device manufacturing method, and computer program
JP5106747B2 (ja) * 2004-10-27 2012-12-26 ルネサスエレクトロニクス株式会社 パターン形成方法、半導体装置の製造方法及び露光用マスクセット
JP2006229019A (ja) * 2005-02-18 2006-08-31 Canon Inc 露光装置
JP2006245145A (ja) 2005-03-01 2006-09-14 Nikon Corp 光学特性計測方法及び装置、並びに露光方法及び装置
JP2006303196A (ja) 2005-04-20 2006-11-02 Canon Inc 測定装置及びそれを有する露光装置
US20070081138A1 (en) * 2005-10-11 2007-04-12 Asml Netherlands B.V. Lithographic projection apparatus, device manufacturing methods and mask for use in a device manufacturing method
JP2007142084A (ja) * 2005-11-17 2007-06-07 Nikon Corp 露光方法及びデバイス製造方法
US20070115452A1 (en) 2005-11-23 2007-05-24 Asml Netherlands B.V. Method of measuring the magnification of a projection system, device manufacturing method and computer program product
US20090002656A1 (en) * 2007-06-29 2009-01-01 Asml Netherlands B.V. Device and method for transmission image detection, lithographic apparatus and mask for use in a lithographic apparatus

Also Published As

Publication number Publication date
JP2009081414A (ja) 2009-04-16
US20090002656A1 (en) 2009-01-01
TW200915013A (en) 2009-04-01
US20100141920A1 (en) 2010-06-10
KR20090003117A (ko) 2009-01-09
CN101344731B (zh) 2011-01-12
CN101344731A (zh) 2009-01-14
US20090002710A1 (en) 2009-01-01
JP2013048276A (ja) 2013-03-07
US7675605B2 (en) 2010-03-09
TWI451201B (zh) 2014-09-01
KR100965616B1 (ko) 2010-06-23
JP5670985B2 (ja) 2015-02-18
US9036130B2 (en) 2015-05-19

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