JP5117496B2 - 層の平面に垂直なスピン分極が大きい薄層磁気デバイス、およびそのデバイスを使用する磁気トンネル接合およびスピンバルブ - Google Patents
層の平面に垂直なスピン分極が大きい薄層磁気デバイス、およびそのデバイスを使用する磁気トンネル接合およびスピンバルブ Download PDFInfo
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 246
- 230000010287 polarization Effects 0.000 title claims abstract description 37
- 230000005415 magnetization Effects 0.000 claims abstract description 109
- 239000000463 material Substances 0.000 claims abstract description 25
- 239000000696 magnetic material Substances 0.000 claims abstract description 24
- 239000010409 thin film Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000003302 ferromagnetic material Substances 0.000 claims abstract description 14
- 230000008878 coupling Effects 0.000 claims abstract description 7
- 238000010168 coupling process Methods 0.000 claims abstract description 7
- 238000005859 coupling reaction Methods 0.000 claims abstract description 7
- 238000004544 sputter deposition Methods 0.000 claims abstract description 6
- 239000002131 composite material Substances 0.000 claims abstract description 5
- 239000010941 cobalt Substances 0.000 claims description 58
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 58
- 229910017052 cobalt Inorganic materials 0.000 claims description 56
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 54
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 31
- 229910052697 platinum Inorganic materials 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 16
- 239000010949 copper Substances 0.000 claims description 16
- 229910052759 nickel Inorganic materials 0.000 claims description 13
- 229910045601 alloy Inorganic materials 0.000 claims description 12
- 239000000956 alloy Substances 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 239000000395 magnesium oxide Substances 0.000 claims description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- 229910002056 binary alloy Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910002058 ternary alloy Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims 1
- 230000003993 interaction Effects 0.000 abstract description 9
- 230000007423 decrease Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 261
- 230000015654 memory Effects 0.000 description 23
- 238000004519 manufacturing process Methods 0.000 description 13
- 239000013078 crystal Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 230000006870 function Effects 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 9
- 229910000889 permalloy Inorganic materials 0.000 description 8
- 238000009826 distribution Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 239000002885 antiferromagnetic material Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000028161 membrane depolarization Effects 0.000 description 4
- 238000012552 review Methods 0.000 description 4
- 229910003321 CoFe Inorganic materials 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000002459 sustained effect Effects 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000002999 depolarising effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 229910001004 magnetic alloy Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910015136 FeMn Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- FQMNUIZEFUVPNU-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co] FQMNUIZEFUVPNU-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000005865 ionizing radiation Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000006060 molten glass Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/12—Measuring magnetic properties of articles or specimens of solids or fluids
- G01R33/1284—Spin resolved measurements; Influencing spins during measurements, e.g. in spintronics devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/3227—Exchange coupling via one or more magnetisable ultrathin or granular films
- H01F10/3231—Exchange coupling via one or more magnetisable ultrathin or granular films via a non-magnetic spacer
- H01F10/3236—Exchange coupling via one or more magnetisable ultrathin or granular films via a non-magnetic spacer made of a noble metal, e.g.(Co/Pt) n multilayers having perpendicular anisotropy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
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- H—ELECTRICITY
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- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
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- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
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- H—ELECTRICITY
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- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B15/00—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
- H03B15/006—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects using spin transfer effects or giant magnetoresistance
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
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- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
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- H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
- H01F10/30—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers characterised by the composition of the intermediate layers, e.g. seed, buffer, template, diffusion preventing, cap layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
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- Y10T428/1121—Multilayer
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- General Physics & Mathematics (AREA)
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- Hall/Mr Elements (AREA)
- Thin Magnetic Films (AREA)
- Mram Or Spin Memory Techniques (AREA)
Description
- 速度(ほんの数ナノ秒の書き込み読み出し時間)
- 不揮発性
- 読み出し/書き込み疲労がない
- 電離放射線の影響を受けない
ただし、Cは、磁気層の体積特性に依存する定数であり、Kapは、垂直異方性定数であり、磁気層と接触した材料の詳しい構造および界面の構造品質に依存する。
- 垂直磁気異方性が大きい材料から作られる磁気層であって、その磁化が、どのような電気的または磁気的な相互作用がない場合でも、該磁気層の平面の外部に配置される、磁気層と、
- 先の層と直接接触し、スピン分極の比率が高い強磁性材料から作られる磁気層であって、その磁化が、どのような電気的または磁気的な相互作用がない場合でも、その平面上に配置され、先の層とのその結合が、これら2つの層を含むアセンブリの有効な消磁磁場の低減を誘起する、磁気層と、
- 先の磁気層、すなわちスピン分極の比率が高い強磁性材料から作られる磁気層と直接接触し、デバイスを通過する電子には分極性でない材料から作られる非磁気層と、から構成される薄膜磁気デバイスに関する。
平面磁化を有するスピンバルブまたは磁気トンネル接合の内部の垂直分極層として、
垂直磁化を有する構造中の活性層、すなわちフリー層および固定層の両方として、
平面磁化を有する構造中の活性層として、すなわち弱い磁化磁場を有するフリー層として、
使用することができる。
ただし、kv2およびks2は、マルチレイヤ2のそれぞれ磁気結晶異方性および界面異方性である。
ただし、kv3およびks3は、コバルト層のそれぞれ磁気結晶異方性および界面異方性である。
層3について、-2π・M2 3・e3
ただし、M2(3)は、対応する層の自然発生的な磁化である。
ただし、θ2は、層の平面に対して垂直の方向に対する層2の磁化角度である。
2 層、マルチレイヤ、白金およびコバルトの層のスタックから構成される層、磁気層
3 層、コバルト層、スピン分極の比率が高い強磁性材料から作られる層、磁気層
4 層、銅の層、非磁気層
Claims (16)
- カソードスパッタリングによって堆積された複合アセンブリを基板上に含む薄膜磁気デバイスにおいて、
・正の有効異方性を有する材料からなる第1の磁気層(2)であって、その磁化は前記第1の磁気層の平面に垂直に方向付けられ、単位表面積当たりの体積部分及び界面の寄与を含む正の有効異方性k2が、[(k v2 −2πM 2 2 )e 2 +k s2 ]であり、ここで、
k v2 は、前記第1の磁気層(2)の体積異方性であり、
M 2 は、前記第1の磁気層(2)の磁化であり、
e 2 は、前記第1の磁気層(2)の厚さであり、
k s2 は、前記第1の磁気層(2)の体積異方性である、
第1の磁気層(2)と、
・負の有効異方性を有する材料からなる第2の磁気層(3)であって、単位表面積当たりの体積部分及び界面の寄与を含む負の有効異方性k3が、[(k v3 −2πM 2 3 )e 3 +k s3 ]であり、ここで、
k v3 は、前記第2の磁気層(3)の体積異方性であり、
M 3 は、前記第2の磁気層(3)の磁化であり、
e 3 は、前記第2の磁気層(3)の厚さであり、
k s3 は、前記第2の磁気層(3)の体積異方性であり、かつ、
少なくとも50%のスピン分極を有し、前記第2の磁気層(3)の平面に垂直に電流が流れる時に、前記第2の磁気層(3)を通して流れる電子をスピン分極させる、
第2の磁気層(3)と、
・前記第1の磁気層(2)との界面とは反対側の前記第2の磁気層(3)の界面において前記第2の磁気層(3)と直接接触する第3の非磁気層(4)であって、前記第3の非磁気層(4)を通過する電子に対しては分極性でない材料からなる第3の非磁気層(4)と、を備え、
・前記第1の磁気層(2)と前記第2の磁気層(3)との間の単位表面積当たりの結合エネルギーは、前記第2の磁気層(3)の単位表面積当たりの負の有効異方性の絶対値の少なくとも2倍であり、かつ、有効磁気異方性の値の和k2+k3が正であり、
・前記第1の磁気層(2)が固定され、前記薄膜磁気デバイスは、前記各層中をそれらの平面に対して実質的に垂直な方向に電流を流す手段をさらに備える、薄膜磁気デバイス。 - 正の有効異方性を有する材料からなる第1の磁気層(2)が、コバルト、白金、鉄、ニッケル、パラジウム、金および銅を含む群から選択される材料の材料、合金またはマルチレイヤから構成されることを特徴とする、請求項1に記載の薄膜磁気デバイス。
- 少なくとも50%のスピン分極を有する強磁性材料からなる前記第2の磁気層(3)が、コバルト、鉄、ニッケル、あるいはそれらの二元または三元合金を含む群から選択される磁性材料から構成されることを特徴とする、請求項1に記載の薄膜磁気デバイス。
- 少なくとも50%のスピン分極を有する強磁性材料からなる前記第2の磁気層(3)を構成する前記磁性材料が、結晶化した、またはアモルファスであり、かつヨウ素、ケイ素、リン、炭素、ジルコニウム、ハフニウムまたはそれらの合金を含む群から選択される追加の非磁性材料を含むことを特徴とする、請求項1に記載の薄膜磁気デバイス。
- 少なくとも50%のスピン分極を有する強磁性材料からなる前記第2の磁気層(3)が、磁性金属/磁性金属または磁性金属/非磁性金属のタイプのマルチレイヤから構成されることを特徴とする、請求項1に記載の薄膜磁気デバイス。
- 前記第3の非磁気層(4)が、非磁性金属または非磁性酸化物から作られることを特徴とする、請求項1に記載の薄膜磁気デバイス。
- 前記基板と3層からなる前記複合アセンブリの間にバッファ層(1)を介在させることを特徴とする、請求項1から6のいずれか一項に記載の薄膜磁気デバイス。
- 前記バッファ層(1)が、白金、タンタル、クロム、チタン、窒化チタン、銅、金、パラジウム、銀またはそれらの合金を含む群から選択される、1つまたは複数の材料から作られることを特徴とする、請求項7に記載の薄膜磁気デバイス。
- 前記バッファ層(1)が、複数の層から構成されることを特徴とする、請求項7に記載の薄膜磁気デバイス。
- 前記基板が、ケイ素、シリカ、窒化ケイ素、酸化マグネシウム、酸化アルミニウムおよびガラスを含む群から選択される材料から作られることを特徴とする、請求項1から9のいずれか一項に記載の薄膜磁気デバイス。
- さらに、2つの活性磁気層と、請求項1から10のいずれかに記載された薄膜磁気デバイスとを含むことを特徴とする、平面磁化を有する磁気トンネル接合。
- 2つの活性磁気層を有し、前記2つの活性磁気層のうちの少なくとも1つが請求項1から10のいずれかに記載された薄膜磁気デバイスを含むことを特徴とする、平面磁化を有する磁気トンネル接合。
- 2つの活性磁気層を有し、前記2つの活性磁気層のうちの少なくとも1つが請求項1から10のいずれかに記載された薄膜磁気デバイスを含むことを特徴とする、垂直磁化を有する磁気トンネル接合。
- さらに、2つの活性磁気層と、請求項1から10のいずれかに記載された薄膜磁気デバイスとを含むことを特徴とする、平面磁化を有するスピンバルブ。
- 2つの活性磁気層を有し、前記2つの活性磁気層のうちの少なくとも1つが請求項1から10のいずれかに記載された薄膜磁気デバイスを含むことを特徴とする、平面磁化を有するスピンバルブ。
- 2つの活性磁気層を有し、前記2つの活性磁気層のうちの少なくとも1つが請求項1から10のいずれかに記載された薄膜磁気デバイスを含むことを特徴とする、垂直磁化を有するスピンバルブ。
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US86842906P | 2006-12-04 | 2006-12-04 | |
US60/868,429 | 2006-12-04 | ||
PCT/FR2007/051659 WO2008015354A2 (fr) | 2006-08-03 | 2007-07-13 | Dispositif magnétique en couches minces à forte polarisation en spin perpendiculaire au plan des couches, jonction tunnel magnétique et vanne de spin mettant en oeuvre un tel dispositif |
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