JP5117146B2 - 加熱装置 - Google Patents

加熱装置 Download PDF

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Publication number
JP5117146B2
JP5117146B2 JP2007234489A JP2007234489A JP5117146B2 JP 5117146 B2 JP5117146 B2 JP 5117146B2 JP 2007234489 A JP2007234489 A JP 2007234489A JP 2007234489 A JP2007234489 A JP 2007234489A JP 5117146 B2 JP5117146 B2 JP 5117146B2
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JP
Japan
Prior art keywords
ceramic substrate
conductive member
heating
heat
heat conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2007234489A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008153194A (ja
Inventor
育久 森岡
英芳 鶴田
靖文 相原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Priority to KR1020070117144A priority Critical patent/KR101357971B1/ko
Priority to CN2007101927221A priority patent/CN101207945B/zh
Publication of JP2008153194A publication Critical patent/JP2008153194A/ja
Application granted granted Critical
Publication of JP5117146B2 publication Critical patent/JP5117146B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
    • H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Resistance Heating (AREA)
  • Surface Heating Bodies (AREA)
JP2007234489A 2006-12-15 2007-09-10 加熱装置 Active JP5117146B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020070117144A KR101357971B1 (ko) 2006-12-15 2007-11-16 가열 장치
CN2007101927221A CN101207945B (zh) 2006-12-15 2007-11-16 加热装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US87010906P 2006-12-15 2006-12-15
US60/870,109 2006-12-15

Publications (2)

Publication Number Publication Date
JP2008153194A JP2008153194A (ja) 2008-07-03
JP5117146B2 true JP5117146B2 (ja) 2013-01-09

Family

ID=39567722

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007234489A Active JP5117146B2 (ja) 2006-12-15 2007-09-10 加熱装置

Country Status (3)

Country Link
JP (1) JP5117146B2 (zh)
KR (1) KR101357971B1 (zh)
CN (1) CN101207945B (zh)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101916738B (zh) * 2010-07-08 2013-07-17 中微半导体设备(上海)有限公司 一种易于释放晶片的静电吸盘结构及方法
US10883950B2 (en) 2011-08-30 2021-01-05 Watlow Electric Manufacturing Company Multi-parallel sensor array system
US9624137B2 (en) 2011-11-30 2017-04-18 Component Re-Engineering Company, Inc. Low temperature method for hermetically joining non-diffusing ceramic materials
US8932690B2 (en) 2011-11-30 2015-01-13 Component Re-Engineering Company, Inc. Plate and shaft device
US11229968B2 (en) 2011-11-30 2022-01-25 Watlow Electric Manufacturing Company Semiconductor substrate support with multiple electrodes and method for making same
US20130189022A1 (en) * 2011-11-30 2013-07-25 Component Re-Engineering Company, Inc. Hermetically Joined Plate And Shaft Devices
JP5687396B1 (ja) * 2014-03-31 2015-03-18 Ｓｐｐテクノロジーズ株式会社 プラズマ処理装置
KR102110267B1 (ko) * 2014-10-31 2020-05-14 와틀로 일렉트릭 매뉴팩츄어링 컴파니 히터를 위한 열적 동적 응답 감지 시스템
CN105097632B (zh) * 2015-06-23 2018-07-17 京东方科技集团股份有限公司 一种支撑基板的支撑件和支撑装置
JP6530088B2 (ja) * 2016-01-29 2019-06-12 株式会社美鈴工業 ヒータとそれを備える定着装置、画像形成装置及び加熱装置
CN108028220B (zh) * 2016-08-10 2022-02-25 日本碍子株式会社 陶瓷加热器
JP6393006B1 (ja) 2018-02-08 2018-09-19 日本碍子株式会社 半導体製造装置用ヒータ
US10566228B2 (en) 2018-02-08 2020-02-18 Ngk Insulators, Ltd. Heater for semiconductor manufacturing apparatus
CN110230043A (zh) * 2019-05-17 2019-09-13 苏州珂玛材料科技股份有限公司 化学气相淀积设备、陶瓷加热盘与陶瓷加热盘的制备方法
CN112563185B (zh) * 2021-02-20 2021-06-08 北京中硅泰克精密技术有限公司 静电卡盘及半导体加工设备
CN115606318A (zh) 2021-03-18 2023-01-13 日本碍子株式会社（Jp） AlN陶瓷基体及半导体制造装置用加热器
CN114376276A (zh) * 2021-12-14 2022-04-22 深圳顺络电子股份有限公司 加热器和电子烟

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09213781A (ja) * 1996-02-01 1997-08-15 Tokyo Electron Ltd 載置台構造及びそれを用いた処理装置
JP3288922B2 (ja) * 1996-03-14 2002-06-04 日本碍子株式会社 接合体およびその製造方法
JPH10116676A (ja) * 1996-10-09 1998-05-06 Nippon Cement Co Ltd ヒーター用均熱材
US5880924A (en) * 1997-12-01 1999-03-09 Applied Materials, Inc. Electrostatic chuck capable of rapidly dechucking a substrate
JP2001102436A (ja) 1999-05-07 2001-04-13 Applied Materials Inc 静電チャック及びその製造方法
WO2001013423A1 (fr) * 1999-08-10 2001-02-22 Ibiden Co., Ltd. Plaque ceramique pour dispositif de production de semi-conducteurs
JP2002100460A (ja) * 2000-09-22 2002-04-05 Ibiden Co Ltd セラミックヒータおよびホットプレートユニット
JP4156788B2 (ja) * 2000-10-23 2008-09-24 日本碍子株式会社 半導体製造装置用サセプター
JP2003297535A (ja) * 2002-04-04 2003-10-17 Ibiden Co Ltd セラミックヒータ
US20030209326A1 (en) * 2002-05-07 2003-11-13 Mattson Technology, Inc. Process and system for heating semiconductor substrates in a processing chamber containing a susceptor

Also Published As

Publication number Publication date
JP2008153194A (ja) 2008-07-03
CN101207945A (zh) 2008-06-25
KR20080056085A (ko) 2008-06-20
CN101207945B (zh) 2011-11-16
KR101357971B1 (ko) 2014-02-04

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