JP5116996B2 - 荷電粒子線描画方法、露光装置、及びデバイス製造方法 - Google Patents

荷電粒子線描画方法、露光装置、及びデバイス製造方法 Download PDF

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Publication number
JP5116996B2
JP5116996B2 JP2006169798A JP2006169798A JP5116996B2 JP 5116996 B2 JP5116996 B2 JP 5116996B2 JP 2006169798 A JP2006169798 A JP 2006169798A JP 2006169798 A JP2006169798 A JP 2006169798A JP 5116996 B2 JP5116996 B2 JP 5116996B2
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Prior art keywords
charged particle
pattern
line width
particle beam
dose
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Expired - Fee Related
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JP2006169798A
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Japanese (ja)
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JP2008004597A5 (enExample
JP2008004597A (ja
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真人 村木
晴夫 依田
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Canon Inc
Hitachi High-Tech Corp
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Hitachi High Technologies Corp
Canon Inc
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Priority to JP2006169798A priority Critical patent/JP5116996B2/ja
Priority to US11/762,182 priority patent/US7692166B2/en
Publication of JP2008004597A publication Critical patent/JP2008004597A/ja
Publication of JP2008004597A5 publication Critical patent/JP2008004597A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30433—System calibration
    • H01J2237/3045—Deflection calibration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30455—Correction during exposure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30477—Beam diameter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30483—Scanning

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
JP2006169798A 2006-06-20 2006-06-20 荷電粒子線描画方法、露光装置、及びデバイス製造方法 Expired - Fee Related JP5116996B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006169798A JP5116996B2 (ja) 2006-06-20 2006-06-20 荷電粒子線描画方法、露光装置、及びデバイス製造方法
US11/762,182 US7692166B2 (en) 2006-06-20 2007-06-13 Charged particle beam exposure apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006169798A JP5116996B2 (ja) 2006-06-20 2006-06-20 荷電粒子線描画方法、露光装置、及びデバイス製造方法

Publications (3)

Publication Number Publication Date
JP2008004597A JP2008004597A (ja) 2008-01-10
JP2008004597A5 JP2008004597A5 (enExample) 2009-08-06
JP5116996B2 true JP5116996B2 (ja) 2013-01-09

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JP2006169798A Expired - Fee Related JP5116996B2 (ja) 2006-06-20 2006-06-20 荷電粒子線描画方法、露光装置、及びデバイス製造方法

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Country Link
US (1) US7692166B2 (enExample)
JP (1) JP5116996B2 (enExample)

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US8933650B2 (en) 2007-11-30 2015-01-13 Mevion Medical Systems, Inc. Matching a resonant frequency of a resonant cavity to a frequency of an input voltage
US8581523B2 (en) 2007-11-30 2013-11-12 Mevion Medical Systems, Inc. Interrupted particle source
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US20120112091A1 (en) * 2010-11-04 2012-05-10 National Taiwan University Method for adjusting status of particle beams for patterning a substrate and system using the same
JP6277953B2 (ja) 2012-02-29 2018-02-14 凸版印刷株式会社 針状体の製造方法
JP6121546B2 (ja) 2012-09-28 2017-04-26 メビオン・メディカル・システムズ・インコーポレーテッド 粒子加速器用の制御システム
ES2739830T3 (es) 2012-09-28 2020-02-04 Mevion Medical Systems Inc Ajuste de energía de un haz de partículas
US9155186B2 (en) 2012-09-28 2015-10-06 Mevion Medical Systems, Inc. Focusing a particle beam using magnetic field flutter
US10254739B2 (en) 2012-09-28 2019-04-09 Mevion Medical Systems, Inc. Coil positioning system
CN105103662B (zh) 2012-09-28 2018-04-13 梅维昂医疗系统股份有限公司 磁场再生器
JP6523957B2 (ja) 2012-09-28 2019-06-05 メビオン・メディカル・システムズ・インコーポレーテッド 磁場を変更するための磁性シム
CN104813748B (zh) 2012-09-28 2019-07-09 梅维昂医疗系统股份有限公司 聚焦粒子束
JP6367201B2 (ja) 2012-09-28 2018-08-01 メビオン・メディカル・システムズ・インコーポレーテッド 粒子ビームの強度の制御
WO2014052734A1 (en) 2012-09-28 2014-04-03 Mevion Medical Systems, Inc. Controlling particle therapy
US8791656B1 (en) 2013-05-31 2014-07-29 Mevion Medical Systems, Inc. Active return system
US9730308B2 (en) 2013-06-12 2017-08-08 Mevion Medical Systems, Inc. Particle accelerator that produces charged particles having variable energies
US10258810B2 (en) 2013-09-27 2019-04-16 Mevion Medical Systems, Inc. Particle beam scanning
US9962560B2 (en) 2013-12-20 2018-05-08 Mevion Medical Systems, Inc. Collimator and energy degrader
US10675487B2 (en) 2013-12-20 2020-06-09 Mevion Medical Systems, Inc. Energy degrader enabling high-speed energy switching
US9661736B2 (en) 2014-02-20 2017-05-23 Mevion Medical Systems, Inc. Scanning system for a particle therapy system
US9950194B2 (en) 2014-09-09 2018-04-24 Mevion Medical Systems, Inc. Patient positioning system
CN105301472A (zh) * 2015-11-04 2016-02-03 天津津航计算技术研究所 一种空间单粒子翻转率的测量系统
US10786689B2 (en) 2015-11-10 2020-09-29 Mevion Medical Systems, Inc. Adaptive aperture
EP3906968A1 (en) 2016-07-08 2021-11-10 Mevion Medical Systems, Inc. Treatment planning
US11103730B2 (en) 2017-02-23 2021-08-31 Mevion Medical Systems, Inc. Automated treatment in particle therapy
US11532760B2 (en) 2017-05-22 2022-12-20 Howmedica Osteonics Corp. Device for in-situ fabrication process monitoring and feedback control of an electron beam additive manufacturing process
JP6940676B2 (ja) 2017-06-30 2021-09-29 メビオン・メディカル・システムズ・インコーポレーテッド リニアモーターを使用して制御される構成可能コリメータ
AU2019206103B2 (en) 2018-07-19 2025-06-26 Howmedica Osteonics Corp. System and process for in-process electron beam profile and location analyses
JP2022524103A (ja) 2019-03-08 2022-04-27 メビオン・メディカル・システムズ・インコーポレーテッド カラム別の放射線の照射およびそのための治療計画の生成
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US20080067403A1 (en) 2008-03-20
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