JP5113980B2 - 圧力センサ装置およびその製造方法 - Google Patents
圧力センサ装置およびその製造方法 Download PDFInfo
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- JP5113980B2 JP5113980B2 JP2004052461A JP2004052461A JP5113980B2 JP 5113980 B2 JP5113980 B2 JP 5113980B2 JP 2004052461 A JP2004052461 A JP 2004052461A JP 2004052461 A JP2004052461 A JP 2004052461A JP 5113980 B2 JP5113980 B2 JP 5113980B2
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- 238000004519 manufacturing process Methods 0.000 title description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 163
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 163
- 239000010703 silicon Substances 0.000 claims abstract description 163
- 239000012528 membrane Substances 0.000 claims abstract description 36
- 238000005530 etching Methods 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 25
- 238000005538 encapsulation Methods 0.000 claims description 15
- 239000011810 insulating material Substances 0.000 claims 1
- 229920001296 polysiloxane Polymers 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 12
- 235000012431 wafers Nutrition 0.000 description 61
- 238000000034 method Methods 0.000 description 55
- 238000002955 isolation Methods 0.000 description 34
- 238000000151 deposition Methods 0.000 description 24
- 230000008021 deposition Effects 0.000 description 22
- 238000006243 chemical reaction Methods 0.000 description 14
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 238000007789 sealing Methods 0.000 description 8
- 238000006073 displacement reaction Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 238000005498 polishing Methods 0.000 description 7
- 238000009530 blood pressure measurement Methods 0.000 description 6
- 238000013459 approach Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910021426 porous silicon Inorganic materials 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 208000012868 Overgrowth Diseases 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000007373 indentation Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- -1 carbide Chemical compound 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00047—Cavities
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
- G01L9/0045—Diaphragm associated with a buried cavity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0102—Surface micromachining
- B81C2201/0105—Sacrificial layer
- B81C2201/0109—Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/0176—Chemical vapour Deposition
- B81C2201/0177—Epitaxy, i.e. homo-epitaxy, hetero-epitaxy, GaAs-epitaxy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0145—Hermetically sealing an opening in the lid
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Description
11 ベースシリコン層
12 犠牲層
13 上部シリコン層
14 通気孔
15 キャビティ
16 エッジ
17 エピタキシャルシリコン層
18 圧電抵抗
19 膜
30 アイソレーションリング
31 リングキャビティ
32A 酸化物支持リング
40 埋め込み部
41 基板コンタクト
42 コンタクトアイソレーショントレンチ
43 フィールドシリコン
Claims (14)
- 基板と、カプセル化層と、少なくとも1つのキャビティと、少なくとも1つのシリコンプラグと、センサ素子とが設けられており、
前記カプセル化層は少なくとも1つの通気孔を有しており、前記少なくとも1つのキャビティはカプセル化層と基板との間で規定され、該少なくとも1つのキャビティの上のカプセル化層部分によって膜が形成され、
前記少なくとも1つのシリコンプラグはエピタキシャルでデポジットされて前記少なくとも1つの通気孔各々を充填し、
前記センサ素子は前記膜の上に配置されており、
前記少なくとも1つの通気孔は少なくとも1つのテーパ状に形成された通気孔を有しており、該少なくとも1つのテーパ状に形成された通気孔は、上部シリコン層の最上部に位置する上部断面と前記キャビティに面した底部断面を有しており、前記上部断面の幅は前記底部断面の幅よりも大きく、前記上部断面は前記底部断面に平行であることを特徴とする、
圧力センサ装置。 - 前記センサ素子には上部容量コンタクトが設けられており、
前記カプセル化層の上に底部容量コンタクトポストが配置されていて、該底部容量コンタクトポストは前記少なくとも1つのキャビティの下に配置された埋め込み部と電気的に結合されており、
前記底部容量コンタクトポストの周囲にエッチングにより少なくとも1つのトレンチが形成されている、
請求項1記載の装置。 - 前記少なくとも1つのトレンチは、カプセル化層とは逆のドーピング型でドーピングされエピタキシャルでデポジットされたシリコンにより充填されている、請求項2記載の装置。
- 前記少なくとも1つのトレンチは誘電体絶縁材料によって充填されている、請求項2記載の装置。
- 前記埋め込み部は基板とは逆のドーピング型でドーピングされている、請求項2記載の装置。
- 前記埋め込み部は基板から誘電的に絶縁されている、請求項2記載の装置。
- 前記センサ素子には少なくとも1つのストレンゲージが含まれている、請求項1記載の装置。
- 前記少なくとも1つのストレンゲージは、歪みに依存して抵抗値が変化する少なくとも1つの圧電抵抗である、請求項7記載の装置。
- 前記少なくとも1つのキャビティはほぼ真空である、請求項1記載の装置。
- 前記カプセル化層にはエピタキシャルにデポジットされたシリコンが含まれている、請求項1記載の装置。
- 前記少なくとも1つのエピタキシャルにデポジットされたシリコンプラグは、エピタキシャルにデポジットされたカプセル化層とは逆のドーピング型でドーピングされている、請求項10記載の装置。
- 前記上部シリコン層の最上部は研磨された滑らかな表面をもつ、請求項1記載の装置。
- 前記上部シリコン層の最上部の、研磨された滑らかな表面の上にCMOSデバイスが配置されている、請求項12記載の装置。
- 基板背面から少なくとも1つのキャビティへガスを通す通路が基板に設けられており、該通路によって背面側と少なくとも1つのキャビティとの間の圧力が等しくされ、前記センサ素子により、基板前面における第1の圧力と基板背面における第2の圧力との間の差分圧力が測定される、請求項1記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/375,645 US6928879B2 (en) | 2003-02-26 | 2003-02-26 | Episeal pressure sensor and method for making an episeal pressure sensor |
US10/375645 | 2003-02-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004260187A JP2004260187A (ja) | 2004-09-16 |
JP5113980B2 true JP5113980B2 (ja) | 2013-01-09 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004052461A Expired - Lifetime JP5113980B2 (ja) | 2003-02-26 | 2004-02-26 | 圧力センサ装置およびその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US6928879B2 (ja) |
EP (1) | EP1452844B1 (ja) |
JP (1) | JP5113980B2 (ja) |
AT (1) | ATE504816T1 (ja) |
DE (1) | DE60336628D1 (ja) |
Cited By (3)
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JP2012154784A (ja) * | 2011-01-26 | 2012-08-16 | Rohm Co Ltd | 静電容量型圧力センサおよび静電容量型圧力センサの製造方法 |
JP2013160532A (ja) * | 2012-02-01 | 2013-08-19 | Rohm Co Ltd | 静電容量型圧力センサおよびその製造方法 |
JP5831728B2 (ja) * | 2012-09-25 | 2015-12-09 | 国立大学法人 東京大学 | キャビティーを備えたデバイス部材およびキャビティーを備えたデバイス部材の製造方法 |
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2003
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- 2003-12-29 AT AT03029915T patent/ATE504816T1/de not_active IP Right Cessation
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Cited By (3)
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JP2012154784A (ja) * | 2011-01-26 | 2012-08-16 | Rohm Co Ltd | 静電容量型圧力センサおよび静電容量型圧力センサの製造方法 |
JP2013160532A (ja) * | 2012-02-01 | 2013-08-19 | Rohm Co Ltd | 静電容量型圧力センサおよびその製造方法 |
JP5831728B2 (ja) * | 2012-09-25 | 2015-12-09 | 国立大学法人 東京大学 | キャビティーを備えたデバイス部材およびキャビティーを備えたデバイス部材の製造方法 |
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Publication number | Publication date |
---|---|
EP1452844B1 (en) | 2011-04-06 |
US20050142688A1 (en) | 2005-06-30 |
DE60336628D1 (de) | 2011-05-19 |
US7629657B2 (en) | 2009-12-08 |
US6928879B2 (en) | 2005-08-16 |
JP2004260187A (ja) | 2004-09-16 |
ATE504816T1 (de) | 2011-04-15 |
US20040163476A1 (en) | 2004-08-26 |
EP1452844A1 (en) | 2004-09-01 |
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