JP5111745B2 - コンデンサ及びその製造方法 - Google Patents
コンデンサ及びその製造方法 Download PDFInfo
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- JP5111745B2 JP5111745B2 JP2005243180A JP2005243180A JP5111745B2 JP 5111745 B2 JP5111745 B2 JP 5111745B2 JP 2005243180 A JP2005243180 A JP 2005243180A JP 2005243180 A JP2005243180 A JP 2005243180A JP 5111745 B2 JP5111745 B2 JP 5111745B2
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- 239000003990 capacitor Substances 0.000 title claims description 50
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000000758 substrate Substances 0.000 claims description 39
- 238000000605 extraction Methods 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 6
- 239000003960 organic solvent Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 55
- 229910052751 metal Inorganic materials 0.000 description 30
- 239000002184 metal Substances 0.000 description 30
- 229910052759 nickel Inorganic materials 0.000 description 26
- 239000004020 conductor Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 13
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 11
- 229910002113 barium titanate Inorganic materials 0.000 description 11
- 238000000206 photolithography Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 5
- -1 for example Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Description
このような原因により、特許文献1に開示された技術では、誘電体層の品質が劣化し、漏れ電流の発生、誘電損失の増加、静電容量の低下、経年劣化が早くなる等、製造されるコンデンサの品質が低下する問題がある。
基板と、
前記基板の一方の主面に形成された下部電極と、
前記基板の一方の主面に、前記下部電極から絶縁されて形成された引き出し電極層と、
少なくとも前記下部電極を覆うように形成され、前記下部電極を覆う領域とは異なる領域であって前記引き出し電極層の上に形成された開口部を備える誘電体層と、
少なくとも一部が前記誘電体層を介して前記下部電極と対向するように前記誘電体層上に形成された上部電極と、
前記基板の前記引き出し電極層に対応する位置に形成され、前記基板の一方の主面から他方の主面まで接続するコンタクトホールと、を備え、
前記上部電極は、前記誘電体層上に形成され、前記誘電体層の前記開口部と平面視して重なるように形成された開口部を備える第1の層と、該第1の層上及び前記誘電体層の前記開口部の内壁及び該第1の層の該開口部の内壁及び前記誘電体層の前記開口部を介して露出する前記引き出し電極層とを覆うように形成された第2の層と、を備え、
前記第1の層と前記第2の層とは異なる材料から形成され、
前記上部電極の前記第2の層の上に絶縁層が形成されることを特徴とする。
前記誘電体層の前記開口部は、該電極パッドが形成された領域に平面視して重なるように形成されてもよい。
基板の一方の主面上に下部電極を形成する下部電極形成工程と、
前記基板の一方の主面上に引き出し電極層を形成する引き出し電極層形成工程と、
少なくとも前記下部電極を覆うように誘電体層を形成する誘電体層形成工程と、
少なくとも一部が前記誘電体層を介して前記下部電極と対向するように前記誘電体層上に上部電極の第1の層を形成する第1の層形成工程と、
前記第1の層のうち前記誘電体層を介して前記下部電極と対向しない領域であって前記引き出し電極層に対向する領域に開口部を形成する開口部形成工程と、
前記第1の層をマスクとして用いて、前記第1の層の開口部を介して前記引き出し電極層の上の前記誘電体層に開口部を形成する誘電体層開口部形成工程と、
前記上部電極の第1の層上、前記第1の層の開口部の内壁及び前記誘電体層の前記開口部の内壁及び前記誘電体層の前記開口部の底面を覆うように、前記上部電極の第2の層を形成する第2の層形成工程と、
前記上部電極の前記第2の層の上に絶縁層を形成する絶縁層形成工程と、
前記基板の前記引き出し電極層に対応する位置に、前記基板の一方の主面から他方の主面まで接続するコンタクトホールを形成するコンタクトホール形成工程と、
を備えることを特徴とする。
前記上部電極の前記第1の層を、前記誘電体層内に該レジストパターンに含まれる不純物が拡散することを防ぐバリアとして機能させてもよい。
前記絶縁層形成工程では、前記第2の層により前記誘電体層を有機溶剤又は現像液から保護してもよい。
図1は、インターポーザ30の断面構成を示すもので、図3に示す平面図のI−I線での断面に相当する。図示するように、インターポーザ30は、コンデンサ10と、引出用電極層13bと、配線16v、16gと、絶縁膜17と、電極パッド18g、18vと、金属層19g、19vと、バンプ20g、20vと、絶縁層21と、金属層22g、22vと、電極パッド23g、23vと、を備える。コンデンサ10は、基板11と、酸化膜12と、下部(下層)電極13aと、誘電体層14と、上部電極15a〜15dと、から構成される。
金属膜16vは、誘電体層14の開口部61v及び上部電極15aの開口部62vを覆うように形成された上部電極15bと、絶縁膜17の開口部63vと、開口部63v近傍の絶縁膜17上面と、を覆うように形成される。金属膜16gも同様に上部電極15dと、開口部63gと、開口部63g近傍の絶縁膜17上面と、を覆うように形成される。
以上の工程から図6(i)に示すようにコンデンサ10を備えるインターポーザ30が製造される。
このように本実施の形態によれば、高品質なコンデンサ10が製造される。
本実施の形態では、コンデンサ10がインターポーザ30内に形成される場合を例に挙げて説明したが、これに限られない。
11 半導体基板
12 酸化膜
13a 下部電極
13b 引出用電極層
14 誘電体層
15a〜15d 上部電極
16v、16g 金属膜
17 絶縁膜
18g、18v、23g、23v 電極パッド
19g、19v 金属層
20g、20v バンプ
21 絶縁層
22g、22v 金属層
30 インターポーザ
50 半導体パッケージ
70 回路基板
Claims (9)
- 基板と、
前記基板の一方の主面に形成された下部電極と、
前記基板の一方の主面に、前記下部電極から絶縁されて形成された引き出し電極層と、
少なくとも前記下部電極を覆うように形成され、前記下部電極を覆う領域とは異なる領域であって前記引き出し電極層の上に形成された開口部を備える誘電体層と、
少なくとも一部が前記誘電体層を介して前記下部電極と対向するように前記誘電体層上に形成された上部電極と、
前記基板の前記引き出し電極層に対応する位置に形成され、前記基板の一方の主面から他方の主面まで接続するコンタクトホールと、を備え、
前記上部電極は、前記誘電体層上に形成され、前記誘電体層の前記開口部と平面視して重なるように形成された開口部を備える第1の層と、該第1の層上及び前記誘電体層の前記開口部の内壁及び該第1の層の該開口部の内壁及び前記誘電体層の前記開口部を介して露出する前記引き出し電極層とを覆うように形成された第2の層と、を備え、
前記第1の層と前記第2の層とは異なる材料から形成され、
前記上部電極の前記第2の層の上に絶縁層が形成されることを特徴とするコンデンサ。 - 前記上部電極の前記第2の層は、前記誘電体層の前記開口部の内壁全面を覆うように形成されることを特徴とする請求項1に記載のコンデンサ。
- 前記基板の他方の主面に前記上部電極に接続される電極パッドが形成され、
前記誘電体層の前記開口部は、該電極パッドが形成された領域に平面視して重なるように形成されることを特徴とする請求項1又は2に記載のコンデンサ。 - 前記電極パッドが形成される領域に平面視して重なるように、前記上部電極の第2の層上に前記上部電極の接続電極が形成されることを特徴とする請求項3に記載のコンデンサ。
- 基板の一方の主面上に下部電極を形成する下部電極形成工程と、
前記基板の一方の主面上に引き出し電極層を形成する引き出し電極層形成工程と、
少なくとも前記下部電極を覆うように誘電体層を形成する誘電体層形成工程と、
少なくとも一部が前記誘電体層を介して前記下部電極と対向するように前記誘電体層上に上部電極の第1の層を形成する第1の層形成工程と、
前記第1の層のうち前記誘電体層を介して前記下部電極と対向しない領域であって前記引き出し電極層に対向する領域に開口部を形成する開口部形成工程と、
前記第1の層をマスクとして用いて、前記第1の層の開口部を介して前記引き出し電極層の上の前記誘電体層に開口部を形成する誘電体層開口部形成工程と、
前記上部電極の第1の層上、前記第1の層の開口部の内壁及び前記誘電体層の前記開口部の内壁及び前記誘電体層の前記開口部の底面を覆うように、前記上部電極の第2の層を形成する第2の層形成工程と、
前記上部電極の前記第2の層の上に絶縁層を形成する絶縁層形成工程と、
前記基板の前記引き出し電極層に対応する位置に、前記基板の一方の主面から他方の主面まで接続するコンタクトホールを形成するコンタクトホール形成工程と、
を備えることを特徴とするコンデンサの製造方法。 - 前記第2の層形成工程では、前記誘電体層の前記開口部の内壁全面を覆うように前記第2の層を形成することを特徴とする請求項5に記載のコンデンサの製造方法。
- 前記開口部形成工程では、前記上部電極の前記第1の層上にレジストパターンを形成し、該レジストパターンをエッチングマスクとして用いて前記第1の層をエッチングし、前記第1の層の前記開口部を形成し、
前記上部電極の前記第1の層は、前記誘電体層内に該レジストパターンに含まれる不純物が拡散することを防ぐバリアとして機能することを特徴とする請求項5又は6に記載のコンデンサの製造方法。 - 前記誘電体層開口部形成工程で、前記誘電体層上に形成された前記上部電極の前記第1の層をマスクとして、第1の層により前記誘電体層を保護しつつ前記誘電体層の前記開口部をエッチング液を用いて形成する、ことを特徴とする請求項5乃至7のいずれか1項に記載のコンデンサの製造方法。
- 前記絶縁層形成工程では、前記第2の層により前記誘電体層を有機溶剤又は現像液から保護することを特徴とする請求項5乃至8のいずれか1項に記載のコンデンサの製造方法。
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US11/508,141 US8247289B2 (en) | 2005-08-24 | 2006-08-23 | Capacitor and manufacturing method thereof |
TW095131127A TW200733302A (en) | 2005-08-24 | 2006-08-24 | Capacitor and manufacturing method thereof |
CNA2006101099255A CN1959964A (zh) | 2005-08-24 | 2006-08-24 | 电容器及其制造方法 |
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US4804490A (en) * | 1987-10-13 | 1989-02-14 | Energy Conversion Devices, Inc. | Method of fabricating stabilized threshold switching material |
US6093615A (en) * | 1994-08-15 | 2000-07-25 | Micron Technology, Inc. | Method of fabricating a contact structure having a composite barrier layer between a platinum layer and a polysilicon plug |
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US6724611B1 (en) * | 2000-03-29 | 2004-04-20 | Intel Corporation | Multi-layer chip capacitor |
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