JP5105811B2 - 表示装置 - Google Patents

表示装置 Download PDF

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Publication number
JP5105811B2
JP5105811B2 JP2006258180A JP2006258180A JP5105811B2 JP 5105811 B2 JP5105811 B2 JP 5105811B2 JP 2006258180 A JP2006258180 A JP 2006258180A JP 2006258180 A JP2006258180 A JP 2006258180A JP 5105811 B2 JP5105811 B2 JP 5105811B2
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Japan
Prior art keywords
film
pixel electrode
metal film
transparent conductive
conductive film
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JP2006258180A
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Japanese (ja)
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JP2007133371A5 (enExample
JP2007133371A (ja
Inventor
肇 木村
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2006258180A priority Critical patent/JP5105811B2/ja
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Publication of JP2007133371A5 publication Critical patent/JP2007133371A5/ja
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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2006258180A 2005-10-14 2006-09-25 表示装置 Active JP5105811B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006258180A JP5105811B2 (ja) 2005-10-14 2006-09-25 表示装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005301022 2005-10-14
JP2005301022 2005-10-14
JP2006258180A JP5105811B2 (ja) 2005-10-14 2006-09-25 表示装置

Related Child Applications (1)

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JP2011246099A Division JP5417412B2 (ja) 2005-10-14 2011-11-10 表示装置

Publications (3)

Publication Number Publication Date
JP2007133371A JP2007133371A (ja) 2007-05-31
JP2007133371A5 JP2007133371A5 (enExample) 2009-10-22
JP5105811B2 true JP5105811B2 (ja) 2012-12-26

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Family Applications (1)

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JP2006258180A Active JP5105811B2 (ja) 2005-10-14 2006-09-25 表示装置

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JP (1) JP5105811B2 (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4932602B2 (ja) * 2006-11-14 2012-05-16 三菱電機株式会社 多層薄膜パターン及び表示装置の製造方法
KR101415561B1 (ko) * 2007-06-14 2014-08-07 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그의 제조 방법
US7824939B2 (en) 2007-10-23 2010-11-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device comprising separated and electrically connected source wiring layers
KR101448903B1 (ko) 2007-10-23 2014-10-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그의 제작방법
JP5380037B2 (ja) 2007-10-23 2014-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5377940B2 (ja) * 2007-12-03 2013-12-25 株式会社半導体エネルギー研究所 半導体装置
CN101884112B (zh) 2007-12-03 2012-09-05 株式会社半导体能源研究所 薄膜晶体管的制造方法和显示器件的制造方法
US8035107B2 (en) 2008-02-26 2011-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
CN101939694B (zh) 2008-02-27 2014-01-29 株式会社半导体能源研究所 液晶显示器件及其制造方法以及电子装置
US8101442B2 (en) 2008-03-05 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing EL display device
US7989275B2 (en) 2008-03-10 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, manufacturing method thereof, display device, and manufacturing method thereof
US7985605B2 (en) 2008-04-17 2011-07-26 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and manufacturing method thereof
US9041202B2 (en) 2008-05-16 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US7790483B2 (en) 2008-06-17 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof, and display device and manufacturing method thereof
US8741702B2 (en) * 2008-10-24 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8207026B2 (en) 2009-01-28 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and manufacturing method of display device
KR101015850B1 (ko) * 2009-02-09 2011-02-24 삼성모바일디스플레이주식회사 유기 발광 표시 장치 제조 방법
US7989234B2 (en) 2009-02-16 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor and method for manufacturing display device
US20100224878A1 (en) 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8461582B2 (en) 2009-03-05 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5514474B2 (ja) * 2009-05-29 2014-06-04 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法、不揮発性半導体記憶素子の作製方法
TWI529914B (zh) 2009-08-07 2016-04-11 半導體能源研究所股份有限公司 半導體裝置和其製造方法
KR101778513B1 (ko) 2009-10-09 2017-09-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 표시 장치 및 이를 포함한 전자 기기
JP6076626B2 (ja) 2012-06-14 2017-02-08 株式会社ジャパンディスプレイ 表示装置及びその製造方法
CN103258827B (zh) * 2013-04-28 2016-03-23 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
TWI649606B (zh) * 2013-06-05 2019-02-01 日商半導體能源研究所股份有限公司 顯示裝置及電子裝置
CN103413898B (zh) * 2013-08-29 2015-11-11 深圳市华星光电技术有限公司 有机发光二极管阳极连接结构及其制作方法
JP6497876B2 (ja) * 2014-09-01 2019-04-10 三菱電機株式会社 液晶表示パネル、及びその製造方法
KR102651136B1 (ko) * 2016-04-12 2024-03-25 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
CN105742299B (zh) * 2016-05-16 2019-11-29 京东方科技集团股份有限公司 一种像素单元及其制作方法、阵列基板及显示装置
JP2019074684A (ja) * 2017-10-18 2019-05-16 シャープ株式会社 表示パネル用基板の製造方法
CN112750882B (zh) * 2020-12-30 2022-12-20 湖北长江新型显示产业创新中心有限公司 一种显示面板和显示装置
WO2023243460A1 (ja) * 2022-06-15 2023-12-21 ソニーグループ株式会社 液晶表示素子および表示装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3281849B2 (ja) * 1997-10-07 2002-05-13 シャープ株式会社 アクティブマトリクス型液晶表示装置
JP3284187B2 (ja) * 1998-01-29 2002-05-20 シャープ株式会社 液晶表示装置およびその製造方法
JP2955277B2 (ja) * 1997-07-28 1999-10-04 シャープ株式会社 液晶表示装置
JP4167335B2 (ja) * 1998-01-30 2008-10-15 シャープ株式会社 液晶表示装置
JP2001326360A (ja) * 2000-05-18 2001-11-22 Sharp Corp アクティブマトリクス基板の製造方法およびアクティブマトリクス基板および薄膜電界効果トランジスタの製造方法
KR100858297B1 (ko) * 2001-11-02 2008-09-11 삼성전자주식회사 반사-투과형 액정표시장치 및 그 제조 방법
JP4302347B2 (ja) * 2001-12-18 2009-07-22 シャープ株式会社 薄膜トランジスタ基板及びその製造方法
JP4373086B2 (ja) * 2002-12-27 2009-11-25 株式会社半導体エネルギー研究所 発光装置
JP4085094B2 (ja) * 2004-02-19 2008-04-30 シャープ株式会社 導電素子基板の製造方法、液晶表示装置の製造方法
JP4275038B2 (ja) * 2004-09-01 2009-06-10 シャープ株式会社 アクティブマトリクス基板およびそれを備えた表示装置
KR101139522B1 (ko) * 2004-12-04 2012-05-07 엘지디스플레이 주식회사 반투과형 박막 트랜지스터 기판 및 그 제조 방법

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