JP5101690B2 - 成膜装置及び成膜方法 - Google Patents
成膜装置及び成膜方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 33
- 239000010408 film Substances 0.000 claims description 242
- 239000000758 substrate Substances 0.000 claims description 82
- 239000007788 liquid Substances 0.000 claims description 65
- 230000002940 repellent Effects 0.000 claims description 60
- 239000005871 repellent Substances 0.000 claims description 60
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 56
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 50
- 238000006068 polycondensation reaction Methods 0.000 claims description 38
- 230000015572 biosynthetic process Effects 0.000 claims description 27
- 238000007740 vapor deposition Methods 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 17
- 239000010409 thin film Substances 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 6
- 239000011856 silicon-based particle Substances 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000007246 mechanism Effects 0.000 claims description 2
- 238000011144 upstream manufacturing Methods 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 description 21
- 238000007254 oxidation reaction Methods 0.000 description 21
- 230000003287 optical effect Effects 0.000 description 17
- 230000008569 process Effects 0.000 description 15
- 239000010410 layer Substances 0.000 description 13
- 229910044991 metal oxide Inorganic materials 0.000 description 9
- 150000004706 metal oxides Chemical class 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000003860 storage Methods 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 7
- 238000007598 dipping method Methods 0.000 description 6
- 239000002344 surface layer Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000006116 polymerization reaction Methods 0.000 description 5
- 239000008400 supply water Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 238000007599 discharging Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 230000001846 repelling effect Effects 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000005478 sputtering type Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- B05D3/107—Post-treatment of applied coatings
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0073—Reactive sputtering by exposing the substrates to reactive gases intermittently
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- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
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Description
本発明の一態様は、成膜装置である。該成膜装置は、真空槽内で回転される基板に向けて粒子を放出することにより基板上に被酸化物膜を形成し、前記回転される基板上の前記被酸化物膜に向けて酸素プラズマを照射することにより前記基板上に酸化物膜を形成する酸化物膜形成部と、加水分解性の重縮合基と撥液基とを有するシランカップリング剤を前記回転される基板に向けて蒸発させて、前記酸化物膜上に前記シランカップリング剤を蒸着する蒸着部と、前記回転される基板上の前記酸化物膜に向けて水を供給することにより前記シランカップリング剤を重縮合させる重縮合部と、を備え、前記重縮合部は、前記蒸着部が前記酸化物膜上に前記シランカップリング剤を蒸着する前に、前記酸化物膜上に前記水を供給する。
次に、成膜装置10を用いて成膜した撥液膜の機械的耐性について以下に説明する。まず、撥液膜の撥液性に基づいて、成膜時における水の流量を設定した。
(摩擦試験条件)
・荷重:500g/cm2
・摩擦速度:14cm/sec
・摩擦子:綿布
・擦り試験回数:1000回、3000回、5000回、7000回、10000回
図5において、実施例の撥液膜は、擦り試験回数の増加に伴い、対水接触角を徐々に減少させるが、擦り試験回数が10000回までの範囲において、その対水接触角の減少幅が7°以内である。一方、比較例の撥液膜は、擦り試験回数の増加に伴い、対水接触角を大幅に減少させ、擦り試験回数が10000回までの範囲において、その対水接触角の減少幅が15°近くになってしまう。したがって、実施例の撥液膜が、比較例の撥液膜に比べて、高い機械的耐性を有することが分かる。
(1)成膜装置10は、加水分解性の重縮合基と撥液基とを有するシランカップリング剤を、基板Sの回転経路に向けて蒸発させて、基板Sに形成される酸化物膜上にシランカップリング剤を蒸着させる。また、成膜装置10は、基板Sの回転経路に向けて水を供給することによりシランカップリング剤を重縮合させる。この時、成膜装置10は、酸化物膜上にシランカップリング剤を蒸着する前に、酸化物膜上に予め水を供給する。
・撥液膜をシリコン酸化物膜の上に形成する構成について説明したが、これに限らず、撥液膜を金属酸化物膜の上に形成する構成であっても良い。
Claims (7)
- 真空槽と、前記真空槽で基板を回転させる回転機構と、を備える成膜装置であって、
前記回転される基板に向けて粒子を放出することにより前記基板上に被酸化物膜を形成し、前記回転される基板上の前記被酸化物膜に向けて酸素プラズマを照射することにより前記基板上に酸化物膜を形成する酸化物膜形成部と、
加水分解性の重縮合基と撥液基とを有するシランカップリング剤を前記回転される基板に向けて蒸発させて、前記酸化物膜上に前記シランカップリング剤を蒸着する蒸着部と、
前記回転される基板上の前記酸化物膜に向けて水を供給することにより前記シランカップリング剤を重縮合させる重縮合部と、を備え、
前記重縮合部は、前記蒸着部が前記酸化物膜上に前記シランカップリング剤を蒸着する前に、前記酸化物膜上に前記水を供給することを特徴とする成膜装置。 - 請求項1に記載の成膜装置において、
前記重縮合部は、前記蒸着部が前記酸化物膜上に前記シランカップリング剤を蒸着する間、前記酸化物膜に向けて前記水を供給し続けることを特徴とする成膜装置。 - 請求項1に記載の成膜装置において、
前記重縮合部は、前記基板の回転方向において前記蒸着部よりも上流側に配置されていることを特徴とする成膜装置。 - 請求項1乃至3のいずれか一項に記載の成膜装置において、
前記酸化物膜形成部は、前記回転される基板に向けてシリコン粒子を放出することにより前記基板上にシリコン膜を形成し、前記回転される基板上の前記シリコン膜に向けて前記酸素プラズマを照射することにより前記基板上にシリコン酸化物膜を形成することを特徴とする成膜装置。 - 真空槽内で回転される基板上に薄膜を成膜する方法であって、
前記回転される基板に向けて粒子を放出することにより前記基板上に被酸化物膜を形成すること、
前記回転される基板上の前記被酸化物膜に向けて酸素プラズマを照射することにより前記基板上に酸化物膜を形成すること、
加水分解性の重縮合基と撥液基とを有するシランカップリング剤と、水とを前記酸化物膜に向けて供給することにより前記酸化物膜上に撥液膜を形成すること、を備え、
前記撥液膜を形成することは、前記酸化物膜に前記シランカップリング剤を供給する前に、前記酸化物膜に前記水を供給することを含むことを特徴とする方法。 - 請求項5に記載の方法において、
前記撥液膜を形成することは更に、前記酸化物膜に前記シランカップリング剤を蒸着する間、前記酸化物膜に前記水を供給し続けることを含むことを特徴とする方法。 - 請求項5又は6に記載の方法において、
前記被酸化物膜を形成することは、前記回転される基板に向けてシリコン粒子を放出することにより前記基板上にシリコン膜を形成することを含み、
前記酸化物膜を形成することは、前記回転される基板上の前記シリコン膜に向けて前記酸素プラズマを照射することにより前記基板上にシリコン酸化物膜を形成することを含むことを特徴とする方法。
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JP2010507262A JP5101690B2 (ja) | 2008-04-09 | 2009-04-08 | 成膜装置及び成膜方法 |
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PCT/JP2009/057228 WO2009125803A1 (ja) | 2008-04-09 | 2009-04-08 | 成膜装置及び成膜方法 |
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JP (1) | JP5101690B2 (ja) |
KR (1) | KR101174377B1 (ja) |
CN (1) | CN101932753B (ja) |
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CN101932753B (zh) | 2008-04-09 | 2013-01-16 | 株式会社爱发科 | 成膜装置及成膜方法 |
US20120307353A1 (en) * | 2011-05-31 | 2012-12-06 | Horst Schreiber | DURABLE MgO-MgF2 COMPOSITE FILM FOR INFRARED ANTI-REFLECTION COATINGS |
US8778462B2 (en) * | 2011-11-10 | 2014-07-15 | E I Du Pont De Nemours And Company | Method for producing metalized fibrous composite sheet with olefin coating |
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JPH05239243A (ja) * | 1991-03-15 | 1993-09-17 | Shinkuron:Kk | 物体の表面処理方法 |
JPH05345641A (ja) * | 1992-06-16 | 1993-12-27 | Toyota Motor Corp | 撥水膜の形成方法 |
JPH1112375A (ja) * | 1997-06-24 | 1999-01-19 | Toppan Printing Co Ltd | 防汚性薄膜の形成方法 |
JP2007247028A (ja) * | 2006-03-17 | 2007-09-27 | Ulvac Japan Ltd | 金属とSiO2の混合膜の成膜方法及びその成膜装置 |
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US4113691A (en) * | 1977-03-02 | 1978-09-12 | Union Carbide Corporation | Polymeric organosilicon compounds |
US5618388A (en) * | 1988-02-08 | 1997-04-08 | Optical Coating Laboratory, Inc. | Geometries and configurations for magnetron sputtering apparatus |
US5523162A (en) * | 1990-04-03 | 1996-06-04 | Ppg Industries, Inc. | Water repellent surface treatment for plastic and coated plastic substrates |
JP2874391B2 (ja) * | 1991-06-05 | 1999-03-24 | 日産自動車株式会社 | 撥水処理ガラスの製造方法 |
US6103320A (en) * | 1998-03-05 | 2000-08-15 | Shincron Co., Ltd. | Method for forming a thin film of a metal compound by vacuum deposition |
JP4602181B2 (ja) * | 2005-07-19 | 2010-12-22 | 株式会社シスウェーブ | 半導体検査用ソケット |
CN101932753B (zh) | 2008-04-09 | 2013-01-16 | 株式会社爱发科 | 成膜装置及成膜方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05239243A (ja) * | 1991-03-15 | 1993-09-17 | Shinkuron:Kk | 物体の表面処理方法 |
JPH05345641A (ja) * | 1992-06-16 | 1993-12-27 | Toyota Motor Corp | 撥水膜の形成方法 |
JPH1112375A (ja) * | 1997-06-24 | 1999-01-19 | Toppan Printing Co Ltd | 防汚性薄膜の形成方法 |
JP2007247028A (ja) * | 2006-03-17 | 2007-09-27 | Ulvac Japan Ltd | 金属とSiO2の混合膜の成膜方法及びその成膜装置 |
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TW200942630A (en) | 2009-10-16 |
US20140295104A1 (en) | 2014-10-02 |
TWI402364B (zh) | 2013-07-21 |
CN101932753B (zh) | 2013-01-16 |
KR101174377B1 (ko) | 2012-08-16 |
US20110014398A1 (en) | 2011-01-20 |
JPWO2009125803A1 (ja) | 2011-08-04 |
WO2009125803A1 (ja) | 2009-10-15 |
US9310524B2 (en) | 2016-04-12 |
CN101932753A (zh) | 2010-12-29 |
KR20100099336A (ko) | 2010-09-10 |
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