JP5097397B2 - プラズマ処理装置およびプラズマの機械的閉じ込めを磁気的に向上させる方法 - Google Patents

プラズマ処理装置およびプラズマの機械的閉じ込めを磁気的に向上させる方法 Download PDF

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Publication number
JP5097397B2
JP5097397B2 JP2006517222A JP2006517222A JP5097397B2 JP 5097397 B2 JP5097397 B2 JP 5097397B2 JP 2006517222 A JP2006517222 A JP 2006517222A JP 2006517222 A JP2006517222 A JP 2006517222A JP 5097397 B2 JP5097397 B2 JP 5097397B2
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Japan
Prior art keywords
confinement ring
magnetic element
confinement
ring
processing apparatus
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JP2006517222A
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English (en)
Japanese (ja)
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JP2007521654A (ja
JP2007521654A5 (https=
Inventor
ケイル・ダグラス・エル．
リー・ルミン
ハドソン・エリック・エー．
サドジャディ・レザ
レンズ・エリック・エイチ．
ディンドゥサ・ラジンダー
スー キム・ジー
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
JP2006517222A 2003-06-20 2004-06-10 プラズマ処理装置およびプラズマの機械的閉じ込めを磁気的に向上させる方法 Expired - Fee Related JP5097397B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/600,191 2003-06-20
US10/600,191 US7455748B2 (en) 2003-06-20 2003-06-20 Magnetic enhancement for mechanical confinement of plasma
PCT/US2004/018557 WO2005001877A2 (en) 2003-06-20 2004-06-10 Magnetic enhancement for mechanical confinement of plasma

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012014832A Division JP2012084925A (ja) 2003-06-20 2012-01-27 プラズマの機械的閉じ込めのための磁気による改善

Publications (3)

Publication Number Publication Date
JP2007521654A JP2007521654A (ja) 2007-08-02
JP2007521654A5 JP2007521654A5 (https=) 2008-02-28
JP5097397B2 true JP5097397B2 (ja) 2012-12-12

Family

ID=33552146

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2006517222A Expired - Fee Related JP5097397B2 (ja) 2003-06-20 2004-06-10 プラズマ処理装置およびプラズマの機械的閉じ込めを磁気的に向上させる方法
JP2012014832A Withdrawn JP2012084925A (ja) 2003-06-20 2012-01-27 プラズマの機械的閉じ込めのための磁気による改善

Family Applications After (1)

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JP2012014832A Withdrawn JP2012084925A (ja) 2003-06-20 2012-01-27 プラズマの機械的閉じ込めのための磁気による改善

Country Status (6)

Country Link
US (2) US7455748B2 (https=)
JP (2) JP5097397B2 (https=)
KR (1) KR101050984B1 (https=)
CN (1) CN101120429B (https=)
TW (1) TWI358971B (https=)
WO (1) WO2005001877A2 (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060226003A1 (en) * 2003-01-22 2006-10-12 John Mize Apparatus and methods for ionized deposition of a film or thin layer
US7244311B2 (en) * 2004-10-13 2007-07-17 Lam Research Corporation Heat transfer system for improved semiconductor processing uniformity
US7430986B2 (en) 2005-03-18 2008-10-07 Lam Research Corporation Plasma confinement ring assemblies having reduced polymer deposition characteristics
US9659758B2 (en) 2005-03-22 2017-05-23 Honeywell International Inc. Coils utilized in vapor deposition applications and methods of production
US20060278520A1 (en) * 2005-06-13 2006-12-14 Lee Eal H Use of DC magnetron sputtering systems
KR101218114B1 (ko) * 2005-08-04 2013-01-18 주성엔지니어링(주) 플라즈마 식각 장치
US7879184B2 (en) * 2006-06-20 2011-02-01 Lam Research Corporation Apparatuses, systems and methods for rapid cleaning of plasma confinement rings with minimal erosion of other chamber parts
US8268116B2 (en) * 2007-06-14 2012-09-18 Lam Research Corporation Methods of and apparatus for protecting a region of process exclusion adjacent to a region of process performance in a process chamber
US20090194414A1 (en) * 2008-01-31 2009-08-06 Nolander Ira G Modified sputtering target and deposition components, methods of production and uses thereof
US8540844B2 (en) * 2008-12-19 2013-09-24 Lam Research Corporation Plasma confinement structures in plasma processing systems
CN102915902B (zh) * 2011-08-02 2015-11-25 中微半导体设备(上海)有限公司 一种电容耦合式的等离子体处理装置及其基片加工方法
US10540354B2 (en) * 2011-10-17 2020-01-21 Micro Focus Llc Discovering representative composite CI patterns in an it system
US9083182B2 (en) 2011-11-21 2015-07-14 Lam Research Corporation Bypass capacitors for high voltage bias power in the mid frequency RF range
US9396908B2 (en) 2011-11-22 2016-07-19 Lam Research Corporation Systems and methods for controlling a plasma edge region
US9263240B2 (en) 2011-11-22 2016-02-16 Lam Research Corporation Dual zone temperature control of upper electrodes
US10586686B2 (en) 2011-11-22 2020-03-10 Law Research Corporation Peripheral RF feed and symmetric RF return for symmetric RF delivery
KR101971312B1 (ko) * 2011-11-23 2019-04-22 램 리써치 코포레이션 다중 존 가스 주입 상부 전극 시스템
KR102011535B1 (ko) 2011-11-24 2019-08-16 램 리써치 코포레이션 가요성 있는 대칭적 rf 복귀 스트랩을 갖는 플라즈마 프로세싱 챔버
US11183373B2 (en) 2017-10-11 2021-11-23 Honeywell International Inc. Multi-patterned sputter traps and methods of making
CN108776129B (zh) * 2018-07-06 2023-12-08 中国科学院西安光学精密机械研究所 多功能环形磁铁阵列激光等离子体约束装置及其应用系统
CN110729165B (zh) * 2018-07-17 2022-05-27 北京北方华创微电子装备有限公司 电感耦合装置、工艺腔室和半导体处理设备
CN112885688B (zh) * 2021-01-11 2022-04-22 长江存储科技有限责任公司 离子注入装置及离子注入方法
CN115966451B (zh) * 2021-10-11 2025-09-09 中微半导体设备(上海)股份有限公司 限制环以及等离子体处理装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59591B2 (ja) * 1981-09-26 1984-01-07 富士通株式会社 プラズマエツチング方法
JPS61128527A (ja) * 1984-11-27 1986-06-16 Mitsubishi Electric Corp プラズマエツチング装置
JPS6269621A (ja) * 1985-09-24 1987-03-30 Anelva Corp プラズマ処理装置
JPH06181187A (ja) * 1992-12-11 1994-06-28 Hitachi Ltd スパッタリング装置
TW299559B (https=) * 1994-04-20 1997-03-01 Tokyo Electron Co Ltd
US6051151A (en) * 1997-11-12 2000-04-18 International Business Machines Corporation Apparatus and method of producing a negative ion plasma
US6085688A (en) * 1998-03-27 2000-07-11 Applied Materials, Inc. Method and apparatus for improving processing and reducing charge damage in an inductively coupled plasma reactor
US6019060A (en) * 1998-06-24 2000-02-01 Lam Research Corporation Cam-based arrangement for positioning confinement rings in a plasma processing chamber
US5998932A (en) * 1998-06-26 1999-12-07 Lam Research Corporation Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber
US20030010454A1 (en) * 2000-03-27 2003-01-16 Bailey Andrew D. Method and apparatus for varying a magnetic field to control a volume of a plasma
US6872281B1 (en) * 2000-09-28 2005-03-29 Lam Research Corporation Chamber configuration for confining a plasma
US6527911B1 (en) * 2001-06-29 2003-03-04 Lam Research Corporation Configurable plasma volume etch chamber
JP4392852B2 (ja) * 2001-12-07 2010-01-06 東京エレクトロン株式会社 プラズマ処理装置に用いられる排気リング機構及びプラズマ処理装置

Also Published As

Publication number Publication date
WO2005001877B1 (en) 2008-05-02
US7838086B2 (en) 2010-11-23
CN101120429B (zh) 2015-09-02
TWI358971B (en) 2012-02-21
JP2012084925A (ja) 2012-04-26
KR101050984B1 (ko) 2011-07-21
WO2005001877A2 (en) 2005-01-06
JP2007521654A (ja) 2007-08-02
US20050006028A1 (en) 2005-01-13
WO2005001877A3 (en) 2005-03-31
TW200511902A (en) 2005-03-16
KR20060039866A (ko) 2006-05-09
US20090041951A1 (en) 2009-02-12
CN101120429A (zh) 2008-02-06
US7455748B2 (en) 2008-11-25

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