JP2007521654A - プラズマの機械的閉じ込めのための磁気による改善 - Google Patents
プラズマの機械的閉じ込めのための磁気による改善 Download PDFInfo
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- JP2007521654A JP2007521654A JP2006517222A JP2006517222A JP2007521654A JP 2007521654 A JP2007521654 A JP 2007521654A JP 2006517222 A JP2006517222 A JP 2006517222A JP 2006517222 A JP2006517222 A JP 2006517222A JP 2007521654 A JP2007521654 A JP 2007521654A
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- 230000006872 improvement Effects 0.000 title description 2
- 210000002381 plasma Anatomy 0.000 title 1
- 238000012545 processing Methods 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000002245 particle Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 24
- 239000007789 gas Substances 0.000 description 22
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 230000007935 neutral effect Effects 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000013459 approach Methods 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000008033 biological extinction Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000005358 geomagnetic field Effects 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910000938 samarium–cobalt magnet Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
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- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
【解決手段】チャンバ壁を持つプラズマ処理チャンバが提供される。基板支持部が前記チャンバ壁内に提供される。少なくとも1つの閉じ込めリングが提供され、前記閉じ込めリングおよび前記基板支持部はプラズマ空間を定義する。前記少なくとも1つの閉じ込めリングによって提供される物理的閉じ込めを磁気的に向上させる磁界を発生する磁界源が提供される。
【選択図】図1
Description
よって必要とされる最小磁界は
ここでρiは、軌道の半径、eはイオンの電荷(単一のイオン化が仮定される)。この例示的計算の目的では、アルゴンが仮定される。アルゴンは、40×1.67×10-27kgの質量を有する。
Claims (16)
- 基板を処理するプラズマ処理装置であって、
チャンバ壁を持つプラズマ処理チャンバ、
前記チャンバ壁内の基板支持部、
少なくとも1つの閉じ込めリングであって、前記閉じ込めリングおよび前記基板支持部はプラズマ空間を定義する、閉じ込めリング、
前記少なくとも1つの閉じ込めリングによって提供される物理的閉じ込めを磁気的に向上させる磁界を発生する磁界源
を備える装置。 - 請求項1に記載のプラズマ処理装置であって、前記磁界源は、前記少なくとも1つの閉じ込めリングの第1側に配置された第1磁気要素、および前記少なくとも1つの閉じ込めリングの第2側に配置された第2磁気要素を備えるプラズマ処理装置。
- 請求項1〜2のいずれかに記載のプラズマ処理装置であって、前記磁界は、前記少なくとも1つの閉じ込めリングとの帯電粒子の衝突を増すプラズマ処理装置。
- 請求項1〜3のいずれかに記載のプラズマ処理装置であって、前記磁界は前記閉じ込めリングを通るプラズマ処理装置。
- 請求項1〜4のいずれかに記載のプラズマ処理装置であって、前記第1磁気要素は、直径を持つリング形状を形成し、前記第2磁気要素は、直径を持つリング形状を形成し、前記閉じ込めリングは、内側直径および外側直径を有し、前記第1磁気要素および前記第2磁気要素は、前記閉じ込めリングの前記外側直径よりも小さく、前記閉じ込めリングの前記内側直径よりも大きいプラズマ処理装置。
- 請求項5に記載のプラズマ処理装置であって、前記第1磁気要素の前記直径は、前記第2磁気要素の前記直径に等しくないプラズマ処理装置。
- 請求項1〜6のいずれかに記載のプラズマ処理装置であって、前記磁界は前記閉じ込めリングの前記領域を通るプラズマ処理装置。
- 請求項1〜7のいずれかに記載のプラズマ処理装置であって、前記閉じ込めリングは、可変ギャップを定義するよう移動可能であり、前記可変ギャップは前記プラズマ空間中の圧力を変えるよう用いられるプラズマ処理装置。
- 請求項8に記載のプラズマ処理装置であって、前記第1磁気要素および第2磁気要素は、前記可変ギャップに交わらないプラズマ処理装置。
- 基板を処理する方法であって、
処理チャンバ中に前記基板を置くこと、
前記処理チャンバにガス源からのガスを供給すること、
前記処理チャンバ中で前記ガスからプラズマを発生すること、
前記プラズマの物理的閉じ込めを提供するために、少なくとも1つの閉じ込めリングに隣接するギャップを通して前記ガスを流すこと、および
前記プラズマの前記物理的閉じ込めを向上させるために前記プラズマの磁気的閉じ込めを提供すること
を含む方法。 - 請求項10に記載の方法であって、前記磁気的閉じ込めを提供することは、前記閉じ込めリングの前記領域中に磁界を提供することを含む方法。
- 請求項11に記載の方法であって、前記磁界は、前記閉じ込めリングとの帯電粒子の衝突を増す方法。
- 請求項11〜12のいずれかに記載の方法であって、前記磁界は前記少なくとも1つの閉じ込めリングを通る方法。
- 請求項10〜13のいずれかに記載の方法であって、更に、前記少なくとも1つの閉じ込めリングを移動させて、プラズマ圧力を制御する方法。
- 請求項10〜14のいずれかに記載の方法であって、前記磁気的閉じ込めは、半径方向に対称的な磁界を提供する方法。
- 請求項10に記載の方法によって製造される半導体デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/600,191 | 2003-06-20 | ||
US10/600,191 US7455748B2 (en) | 2003-06-20 | 2003-06-20 | Magnetic enhancement for mechanical confinement of plasma |
PCT/US2004/018557 WO2005001877A2 (en) | 2003-06-20 | 2004-06-10 | Magnetic enhancement for mechanical confinement of plasma |
Related Child Applications (1)
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JP2012014832A Division JP2012084925A (ja) | 2003-06-20 | 2012-01-27 | プラズマの機械的閉じ込めのための磁気による改善 |
Publications (3)
Publication Number | Publication Date |
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JP2007521654A true JP2007521654A (ja) | 2007-08-02 |
JP2007521654A5 JP2007521654A5 (ja) | 2008-02-28 |
JP5097397B2 JP5097397B2 (ja) | 2012-12-12 |
Family
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Family Applications (2)
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JP2006517222A Expired - Fee Related JP5097397B2 (ja) | 2003-06-20 | 2004-06-10 | プラズマ処理装置およびプラズマの機械的閉じ込めを磁気的に向上させる方法 |
JP2012014832A Withdrawn JP2012084925A (ja) | 2003-06-20 | 2012-01-27 | プラズマの機械的閉じ込めのための磁気による改善 |
Family Applications After (1)
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JP2012014832A Withdrawn JP2012084925A (ja) | 2003-06-20 | 2012-01-27 | プラズマの機械的閉じ込めのための磁気による改善 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7455748B2 (ja) |
JP (2) | JP5097397B2 (ja) |
KR (1) | KR101050984B1 (ja) |
CN (1) | CN101120429B (ja) |
TW (1) | TWI358971B (ja) |
WO (1) | WO2005001877A2 (ja) |
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US20060226003A1 (en) * | 2003-01-22 | 2006-10-12 | John Mize | Apparatus and methods for ionized deposition of a film or thin layer |
US7244311B2 (en) * | 2004-10-13 | 2007-07-17 | Lam Research Corporation | Heat transfer system for improved semiconductor processing uniformity |
US7430986B2 (en) | 2005-03-18 | 2008-10-07 | Lam Research Corporation | Plasma confinement ring assemblies having reduced polymer deposition characteristics |
US9659758B2 (en) | 2005-03-22 | 2017-05-23 | Honeywell International Inc. | Coils utilized in vapor deposition applications and methods of production |
US20060278520A1 (en) * | 2005-06-13 | 2006-12-14 | Lee Eal H | Use of DC magnetron sputtering systems |
KR101218114B1 (ko) * | 2005-08-04 | 2013-01-18 | 주성엔지니어링(주) | 플라즈마 식각 장치 |
US7879184B2 (en) * | 2006-06-20 | 2011-02-01 | Lam Research Corporation | Apparatuses, systems and methods for rapid cleaning of plasma confinement rings with minimal erosion of other chamber parts |
US8268116B2 (en) * | 2007-06-14 | 2012-09-18 | Lam Research Corporation | Methods of and apparatus for protecting a region of process exclusion adjacent to a region of process performance in a process chamber |
US20090194414A1 (en) * | 2008-01-31 | 2009-08-06 | Nolander Ira G | Modified sputtering target and deposition components, methods of production and uses thereof |
US8540844B2 (en) * | 2008-12-19 | 2013-09-24 | Lam Research Corporation | Plasma confinement structures in plasma processing systems |
CN102915902B (zh) * | 2011-08-02 | 2015-11-25 | 中微半导体设备(上海)有限公司 | 一种电容耦合式的等离子体处理装置及其基片加工方法 |
US10540354B2 (en) * | 2011-10-17 | 2020-01-21 | Micro Focus Llc | Discovering representative composite CI patterns in an it system |
US9083182B2 (en) | 2011-11-21 | 2015-07-14 | Lam Research Corporation | Bypass capacitors for high voltage bias power in the mid frequency RF range |
US9396908B2 (en) | 2011-11-22 | 2016-07-19 | Lam Research Corporation | Systems and methods for controlling a plasma edge region |
US9263240B2 (en) * | 2011-11-22 | 2016-02-16 | Lam Research Corporation | Dual zone temperature control of upper electrodes |
US10586686B2 (en) | 2011-11-22 | 2020-03-10 | Law Research Corporation | Peripheral RF feed and symmetric RF return for symmetric RF delivery |
KR101971312B1 (ko) * | 2011-11-23 | 2019-04-22 | 램 리써치 코포레이션 | 다중 존 가스 주입 상부 전극 시스템 |
SG11201402447TA (en) | 2011-11-24 | 2014-06-27 | Lam Res Corp | Plasma processing chamber with flexible symmetric rf return strap |
US11183373B2 (en) | 2017-10-11 | 2021-11-23 | Honeywell International Inc. | Multi-patterned sputter traps and methods of making |
CN108776129B (zh) * | 2018-07-06 | 2023-12-08 | 中国科学院西安光学精密机械研究所 | 多功能环形磁铁阵列激光等离子体约束装置及其应用系统 |
CN110729165B (zh) * | 2018-07-17 | 2022-05-27 | 北京北方华创微电子装备有限公司 | 电感耦合装置、工艺腔室和半导体处理设备 |
CN112885688B (zh) * | 2021-01-11 | 2022-04-22 | 长江存储科技有限责任公司 | 离子注入装置及离子注入方法 |
CN115966451A (zh) * | 2021-10-11 | 2023-04-14 | 中微半导体设备(上海)股份有限公司 | 限制环以及等离子体处理装置 |
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JPS5855569A (ja) * | 1981-09-26 | 1983-04-01 | Fujitsu Ltd | プラズマエツチング方法 |
JPS61128527A (ja) * | 1984-11-27 | 1986-06-16 | Mitsubishi Electric Corp | プラズマエツチング装置 |
JPS6269621A (ja) * | 1985-09-24 | 1987-03-30 | Anelva Corp | プラズマ処理装置 |
JPH06181187A (ja) * | 1992-12-11 | 1994-06-28 | Hitachi Ltd | スパッタリング装置 |
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-
2003
- 2003-06-20 US US10/600,191 patent/US7455748B2/en not_active Expired - Fee Related
-
2004
- 2004-06-10 WO PCT/US2004/018557 patent/WO2005001877A2/en active Application Filing
- 2004-06-10 CN CN200480023920.XA patent/CN101120429B/zh not_active Expired - Fee Related
- 2004-06-10 KR KR1020057024441A patent/KR101050984B1/ko not_active IP Right Cessation
- 2004-06-10 JP JP2006517222A patent/JP5097397B2/ja not_active Expired - Fee Related
- 2004-06-17 TW TW093117559A patent/TWI358971B/zh not_active IP Right Cessation
-
2008
- 2008-10-16 US US12/252,887 patent/US7838086B2/en not_active Expired - Fee Related
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2012
- 2012-01-27 JP JP2012014832A patent/JP2012084925A/ja not_active Withdrawn
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JPS5855569A (ja) * | 1981-09-26 | 1983-04-01 | Fujitsu Ltd | プラズマエツチング方法 |
JPS61128527A (ja) * | 1984-11-27 | 1986-06-16 | Mitsubishi Electric Corp | プラズマエツチング装置 |
JPS6269621A (ja) * | 1985-09-24 | 1987-03-30 | Anelva Corp | プラズマ処理装置 |
JPH06181187A (ja) * | 1992-12-11 | 1994-06-28 | Hitachi Ltd | スパッタリング装置 |
WO2002027755A2 (en) * | 2000-09-28 | 2002-04-04 | Lam Research Corporation | Chamber configuration for confining a plasma |
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WO2003049171A1 (fr) * | 2001-12-07 | 2003-06-12 | Tokyo Electron Limited | Mecanisme a anneau d'extraction, et dispositif de traitement au plasma utilisant ce mecanisme |
Also Published As
Publication number | Publication date |
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JP2012084925A (ja) | 2012-04-26 |
US20050006028A1 (en) | 2005-01-13 |
JP5097397B2 (ja) | 2012-12-12 |
WO2005001877B1 (en) | 2008-05-02 |
KR20060039866A (ko) | 2006-05-09 |
CN101120429A (zh) | 2008-02-06 |
WO2005001877A3 (en) | 2005-03-31 |
KR101050984B1 (ko) | 2011-07-21 |
TW200511902A (en) | 2005-03-16 |
WO2005001877A2 (en) | 2005-01-06 |
CN101120429B (zh) | 2015-09-02 |
US7838086B2 (en) | 2010-11-23 |
US7455748B2 (en) | 2008-11-25 |
TWI358971B (en) | 2012-02-21 |
US20090041951A1 (en) | 2009-02-12 |
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