JP5097233B2 - プラズマドーピング方法 - Google Patents

プラズマドーピング方法 Download PDF

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Publication number
JP5097233B2
JP5097233B2 JP2010063747A JP2010063747A JP5097233B2 JP 5097233 B2 JP5097233 B2 JP 5097233B2 JP 2010063747 A JP2010063747 A JP 2010063747A JP 2010063747 A JP2010063747 A JP 2010063747A JP 5097233 B2 JP5097233 B2 JP 5097233B2
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JP
Japan
Prior art keywords
frequency power
doping method
plasma doping
plasma
gas
Prior art date
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Expired - Fee Related
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JP2010063747A
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English (en)
Japanese (ja)
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JP2011198983A (ja
JP2011198983A5 (enExample
Inventor
重徳 林
正文 久保田
雄一朗 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2010063747A priority Critical patent/JP5097233B2/ja
Priority to US13/051,436 priority patent/US8216922B2/en
Publication of JP2011198983A publication Critical patent/JP2011198983A/ja
Publication of JP2011198983A5 publication Critical patent/JP2011198983A5/ja
Application granted granted Critical
Publication of JP5097233B2 publication Critical patent/JP5097233B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
JP2010063747A 2010-03-19 2010-03-19 プラズマドーピング方法 Expired - Fee Related JP5097233B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010063747A JP5097233B2 (ja) 2010-03-19 2010-03-19 プラズマドーピング方法
US13/051,436 US8216922B2 (en) 2010-03-19 2011-03-18 Plasma doping method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010063747A JP5097233B2 (ja) 2010-03-19 2010-03-19 プラズマドーピング方法

Publications (3)

Publication Number Publication Date
JP2011198983A JP2011198983A (ja) 2011-10-06
JP2011198983A5 JP2011198983A5 (enExample) 2012-09-27
JP5097233B2 true JP5097233B2 (ja) 2012-12-12

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Family Applications (1)

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JP2010063747A Expired - Fee Related JP5097233B2 (ja) 2010-03-19 2010-03-19 プラズマドーピング方法

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US (1) US8216922B2 (enExample)
JP (1) JP5097233B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8642135B2 (en) 2005-09-01 2014-02-04 Micron Technology, Inc. Systems and methods for plasma doping microfeature workpieces
JP5742810B2 (ja) * 2012-10-02 2015-07-01 東京エレクトロン株式会社 プラズマドーピング装置、プラズマドーピング方法、および半導体素子の製造方法
US9783884B2 (en) * 2013-03-14 2017-10-10 Varian Semiconductor Equipment Associates, Inc. Method for implementing low dose implant in a plasma system
JP6194850B2 (ja) * 2014-05-21 2017-09-13 株式会社島津製作所 薄膜形成装置
KR101677748B1 (ko) * 2014-10-29 2016-11-29 삼성전자 주식회사 펄스 플라즈마 장치 및 펄스 플라즈마 장치 구동 방법
KR20220027803A (ko) * 2020-08-27 2022-03-08 주식회사 히타치하이테크 플라스마 처리 장치
WO2023286192A1 (ja) * 2021-07-14 2023-01-19 株式会社日立ハイテク プラズマ処理方法
WO2025057636A1 (ja) * 2023-09-15 2025-03-20 東京エレクトロン株式会社 プラズマ処理装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930003857B1 (ko) * 1987-08-05 1993-05-14 마쯔시다덴기산교 가부시기가이샤 플라즈마 도우핑방법
JPH04303662A (ja) 1991-04-01 1992-10-27 Canon Inc サーマルヘッド
JP3559429B2 (ja) 1997-07-02 2004-09-02 松下電器産業株式会社 プラズマ処理方法
JPH11219938A (ja) 1998-02-02 1999-08-10 Matsushita Electron Corp プラズマエッチング方法
JPH11224796A (ja) 1998-02-05 1999-08-17 Matsushita Electron Corp プラズマ処理装置及びプラズマ処理方法
JPH11329271A (ja) 1998-05-08 1999-11-30 Nissin Electric Co Ltd イオンビーム発生方法およびその装置
JP2000054125A (ja) * 1998-08-10 2000-02-22 Nissin Electric Co Ltd 表面処理方法および装置
JP2000068227A (ja) * 1998-08-24 2000-03-03 Nissin Electric Co Ltd 表面処理方法および装置
JP2001358129A (ja) 2000-06-16 2001-12-26 Matsushita Electric Ind Co Ltd プラズマ処理方法及びプラズマ処理装置
US7294563B2 (en) * 2000-08-10 2007-11-13 Applied Materials, Inc. Semiconductor on insulator vertical transistor fabrication and doping process
JP3778854B2 (ja) 2002-01-15 2006-05-24 シャープ株式会社 プラズマ処理方法およびプラズマ処理装置
JP4544447B2 (ja) 2002-11-29 2010-09-15 パナソニック株式会社 プラズマドーピング方法
JP4303662B2 (ja) 2003-09-08 2009-07-29 パナソニック株式会社 プラズマ処理方法
US7199064B2 (en) 2003-09-08 2007-04-03 Matsushita Electric Industrial Co., Ltd. Plasma processing method and apparatus
US20060121704A1 (en) 2004-12-07 2006-06-08 Varian Semiconductor Equipment Associates, Inc. Plasma ion implantation system with axial electrostatic confinement
US20090004836A1 (en) * 2007-06-29 2009-01-01 Varian Semiconductor Equipment Associates, Inc. Plasma doping with enhanced charge neutralization

Also Published As

Publication number Publication date
US20110230038A1 (en) 2011-09-22
JP2011198983A (ja) 2011-10-06
US8216922B2 (en) 2012-07-10

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