JP5095697B2 - 半導体装置及び接着シート - Google Patents
半導体装置及び接着シート Download PDFInfo
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- JP5095697B2 JP5095697B2 JP2009219339A JP2009219339A JP5095697B2 JP 5095697 B2 JP5095697 B2 JP 5095697B2 JP 2009219339 A JP2009219339 A JP 2009219339A JP 2009219339 A JP2009219339 A JP 2009219339A JP 5095697 B2 JP5095697 B2 JP 5095697B2
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- semiconductor device
- semiconductor
- acid
- semiconductor chip
- metal impurity
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- 239000002184 metal Substances 0.000 claims abstract description 95
- 239000012535 impurity Substances 0.000 claims abstract description 82
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 11
- 150000002500 ions Chemical class 0.000 claims description 65
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 239000002516 radical scavenger Substances 0.000 claims description 11
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- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 description 42
- 238000005247 gettering Methods 0.000 description 25
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- 239000000843 powder Substances 0.000 description 14
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- Mechanical Treatment Of Semiconductor (AREA)
Description
まず、最初に、接着シート(DAF)に添加する金属不純物イオン捕獲剤について、説明する。
まず、錯化剤について説明する。
フェノール、クレゾール、エチルフェノール、t−ブチルフェノール、サルチル酸、クロロフェノール、アミノフェノール、アミノクレゾール、アミドール、p−(2−アミノエチル)フェノール、o−サルチルアニリド、ナフトール、ナフトールスルホン酸、7−アミノ−4−ヒドロキシ−2−ナフタレンスルホン酸等。
カテコール、レゾルシノール、ヒドロキノン、4−メチルピロカテコール、2−メチルヒドロキノン、ピロガロール、1,2,5−ベンゼントリオール、1,3,5−ベンゼントリオール、2−メチルフロログルシノール、2,4,6−トリメチルフロログルシノール、1,2,3,5−ベンゼンテトラオール、ベンゼンヘキサオール、タイロン、アミノレゾルシノール、2,4−ジヒドロキシベンズアルデヒド、3,4−ジヒドロキシベンズアルデヒド、ジヒドロキシアセトフェノン、3,4−ジヒドロキシ安息香酸、没食子酸、2,3,4−トリヒドロキシ安息香酸、2,4−ジヒドロキシ−6−メチル安息香酸、ナフタレンジオール、ナフタレントリオール、ニトロナフトール、ナフタレンテトラオール、ビナフチルジオール、4,5−ジヒドロキシ−2,7−ナフタレンジスルホン酸、1,8−ジヒドロキシ−3,6−ナフタレンジスルホン酸、1,2,3−アントラセントリオール、1,3,5−トリス〔((2,3−ジヒドロキシベンゾイル)アミノ)メチル)ベンゼン〕<MECAM>、1,5,10−トリス(2,3−ジヒドロキシベンゾイル)−1,5,10−トリアザデカン<3,4−LICAM>、1,5,9−トリス(2,3−ジヒドロキシベンゾイル)−1,5,9−サイクロトリアザトリデカン<3,3,4−CYCAM>、1,3,5−トリス〔(2,3−ジヒドロキシベンゾイル)カルバミド〕ベンゼン<TRIM CAM>、エンテロバクチン、エナンシロエンテロバクチン等。
ジヒドロキシベンゾフェノン、2,3,4−トリヒドロキシベンゾフェノン、2,6−ジヒドロキシ−4−メトキシベンゾフェノン、2,2’,5,6’−テトラヒドロキシベンゾフェノン、2,3,4,4’,6−ペンタヒドロキシベンゾフェノン等
o−ヒドロキシベンズアニリド等。
グリオキザールビス(2ーヒドロキシアニル)等。
ビフェニルテトラオール等。
2,3−ジヒドロキシ−1,4−ナフトキノン、5−ヒドロキシ−1,4−ナフト
キノン、ジヒドロキシアントラキノン、1,2−ジヒドロキシ−3−(アミノメチ
ル)アントラキノン−N,N’−2酢酸<アリザリンコンプレキサン>、トリヒドロ
キシアントラキノン等。
ジフェニルメタン−2,2’−ジオール、4,4’,4”−トリフェニルメタントリオール、4,4’−ジヒドロキシフクソン、4,4’−ジヒドロキシ−3−メチルフクソン、ピロカテコールバイオレット<PV>等。
エチレンジアミンジオルトヒドロキシフェニル酢酸<EDDHA>、N,N −ビス(2ーヒドロキシベンジル)エチレンジアミン−N,N−2酢酸<HBED>、エチレンジアミンジヒドロキシメチルフェニル酢酸<EDDHMA>等。
3,3’−エチレンジオキシジフェノール等。
4,4’−ビス(3,4−ジヒドロキシフェニルアゾ)−2,2 ’−スチルベンジスルホン酸−2−アンモニウム<スチルバゾ>、2,8−ジヒドロキシ−1−(8−ヒドロキシ−3,6 −ジスルホ−1−ナフチルアゾ)−3,6−ナフタレンジスルホン酸、o,o’−ジヒドロキシアゾベンゼン、2−ヒドロキシ−1−(2−ヒドロキシ−5−メチルフェニルアゾ)−4−ナフタレンスルホン酸<カルマガイト>、クロロヒドロキシフェニルアゾナフトール、1’,2−ジヒドロキシ−6−ニトロ−1,2’−アゾナフタレン−4−スルホン酸<エリオクロームブラックT>、2−ヒドロキシ−1−(2−ハイドロキシ−4−スルホ−1−ナフチルアゾ)−3,6−ナフタレンジスルホン酸、5−クロロ−2−ハイドロキシ−3−(2,4−ジハイドロキシフェニルアゾ)ベンゼンスルホン酸<ルモガリオン>、2−ヒドロキシ−1−(2−ヒドロキシ−4−スルホ−1−ナフチルアゾ)−3− ナフタレン酸<NN>、1,8−ジヒドロキシ−2−(4−スルホフェニルアゾ)−3,6−ナフタレンジスルホン酸、1,8−ジヒドロキシ−2,7−ビス(5−クロロ−2−ヒドロキシ−3−スルホフェニルアゾ)−3,6−ナフタレンジスルホン酸、1,8−ジヒドロキシ−2,7−ビス(2−スルホフェニルアゾ)−3,6−ナフタレンジスルホン酸、2−〔3−(2,4−ジメチルフェニルアミノカルボキシ)−2−ヒドロキシ−1−ナフチルアゾ〕−3−ヒドロキシベンゼンスルホン酸、2−〔3−(2,4−ジメチルフェニルアミノカルボキシ)−2−ヒドロキシ−1−ナフチルアゾ〕フェノール等。
8−キノリノール、2−メチル−8−キノリノール、キノリンジオール、1−(2−ピリジルアゾ)−2−ナフトール、2−アミノ−4,6,7−プテリジントリオール、5,7 ,3’,4’−テトラヒドロキシフラボン<ルテオリン>、3,3’−ビス〔N,N−ビス(カルボキシメチル)アミノメチル〕フルオレセイン<カルセイン>、2,3−ヒドロキシピリジン等。
シクロペンタノール、クロコン酸、シクロヘキサノール、シロヘキサンジオール、ジヒドロキシジキノイル、トロポロン、6−イソプロピルトロポロン、酒石酸、乳酸、リンゴ酸、クエン酸、ヒドロキシ酪酸、トリエタノールアミン等。
ギ酸、酢酸、プロピオン酸、酪酸、イソ酪酸、吉草酸、デカン酸、ウンデカン酸、ドデカン酸、ステアリン酸、アクリル酸、クロトン酸、オレイン酸、モノクロロ酢酸、ジクロロ酢酸、トリクロロ酢酸、フルオロ酢酸、安息香酸、メチル安息香酸、クロロ安息香酸、スルホカルボン酸、フェニル酢酸等。
シュウ酸、アジピン酸、マロン酸、コハク酸、マレイン酸、フマル酸、1,2,3−プロパントリカルボン酸、クロロコハク酸、フタル酸、1,3,5−ベンゼントリカルボン酸、ジクロロフタル酸、フェニルコハク酸、グルタル酸、ピメリン酸、トリメリト酸、トリカルバリル酸等。
アスパラギン酸、グルタミン酸等。
エチレンジアミン四酢酸、トランス−1,2−ジアミノシクロヘキサン四酢酸等。
エチレンジアミン等。
1−ヒドロキシエチリデン-1,1’−ジホスホン酸等。
トリポリリン酸、ヘキサメタリン酸、ニトロトリス(メチレンホスホン酸)等。
アセチルアセトン、ヘキサフルオロアセチルアセトン等。
次に、無機イオン交換体を説明する。
最後に、金属パウダーについて説明する。
次に、接着シートについて説明する。
本発明の半導体装置をついて説明する。本発明の半導体装置の例として、半導体記憶装置について、説明する。ただし、本発明は、半導体記憶装置以外の他の半導体装置でもよく、半導体記憶装置に限られるものではない。
2 半導体パッケージ
3、13 半導体パッケージ用基板(基板)
4、14、44、54 半導体チップ
5、15 接着シート(DAF)
6 ワイヤー
7 モールド
11 金属不純物イオン
18 水分
24 鏡面処理されていない裏面
34 鏡面処理されている裏面
Claims (6)
- 基板と、
前記基板上に設けられた第1の半導体チップと、
前記第1の半導体チップ上に設けられ、裏面が鏡面処理された第2の半導体チップと、
前記第1の半導体チップと前記第2の半導体チップとの間に設けられ、金属不純物イオンを捕獲する金属不純物イオン捕獲剤を含む接着シートと、
を備え、
前記金属不純物イオン捕獲剤は、表面ラフネスが1.0nm以上である、シリコンパウダーである、
ことを特徴とする半導体装置。 - 前記シリコンパウダーは、アモルファスシリコン、多結晶シリコンの少なくとも1つからなる、ことを特徴とする請求項1に記載の半導体装置。
- 前記シリコンパウダーは、その表面が粗面処理されていることを特徴とする請求項1又は2に記載の半導体装置。
- 前記金属不純物イオンは、Cu、Fe、Au、Na、Ni、Co、Ti、Taのイオンの少なくとも1つが含まれていることを特徴とする請求項1から3の1つに記載の半導体装置。
- 前記鏡面処理は、ドライポリッシュであることを特徴とする請求項1から4の1つに記載の半導体装置。
- 半導体装置内部に設けられた第1の半導体チップと、前記第1の半導体チップ上に設けられた第2の半導体チップと、の間に設けられる接着シートであって、
金属不純物イオンを捕獲する金属不純物イオン捕獲剤を含み、
前記金属不純物イオン捕獲剤は、表面ラフネスが1.0nm以上である、シリコンパウダーである、
ことを特徴とする接着シート。
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JP2009219339A JP5095697B2 (ja) | 2009-09-24 | 2009-09-24 | 半導体装置及び接着シート |
CN2010101357304A CN102034800A (zh) | 2009-09-24 | 2010-03-10 | 半导体装置和粘结片 |
US12/730,007 US8294282B2 (en) | 2009-09-24 | 2010-03-23 | Semiconductor device and adhesive sheet |
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US9177828B2 (en) * | 2011-02-10 | 2015-11-03 | Micron Technology, Inc. | External gettering method and device |
US8846500B2 (en) * | 2010-12-13 | 2014-09-30 | Semiconductor Components Industries, Llc | Method of forming a gettering structure having reduced warpage and gettering a semiconductor wafer therewith |
US8673741B2 (en) | 2011-06-24 | 2014-03-18 | Electro Scientific Industries, Inc | Etching a laser-cut semiconductor before dicing a die attach film (DAF) or other material layer |
JP5804820B2 (ja) * | 2011-07-25 | 2015-11-04 | 日東電工株式会社 | 半導体装置製造用の接着シート、半導体装置製造用の接着シートを有する半導体装置、及び、半導体装置の製造方法 |
JP5972550B2 (ja) * | 2011-09-29 | 2016-08-17 | リンテック株式会社 | チップ用樹脂膜形成用組成物、チップ用樹脂膜形成用シートおよび半導体装置の製造方法 |
JP5972551B2 (ja) * | 2011-10-06 | 2016-08-17 | リンテック株式会社 | チップ用樹脂膜形成用シートおよび半導体チップの製造方法 |
US9117756B2 (en) * | 2012-01-30 | 2015-08-25 | Freescale Semiconductor, Inc. | Encapsulant with corrosion inhibitor |
JP2014049733A (ja) * | 2012-09-04 | 2014-03-17 | Fujitsu Semiconductor Ltd | 半導体装置及び半導体装置の製造方法 |
WO2014176490A1 (en) * | 2013-04-26 | 2014-10-30 | Promerus, Llc | Photosensitive compositions and applications thereof |
JP6299441B2 (ja) * | 2014-06-02 | 2018-03-28 | 株式会社デンソー | 半導体装置 |
DE102015121344B4 (de) | 2015-12-08 | 2023-11-02 | Infineon Technologies Austria Ag | Halbleitervorrichtung und verfahren zu ihrer herstellung |
CN112724603A (zh) * | 2020-12-29 | 2021-04-30 | 江苏科化新材料科技有限公司 | 一种半导体封装用高可靠性环氧塑封料 |
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JPH07114207B2 (ja) | 1991-07-19 | 1995-12-06 | 信越半導体株式会社 | 半導体基板及びその製造方法 |
JP2998330B2 (ja) | 1991-09-19 | 2000-01-11 | 日本電気株式会社 | Simox基板及びその製造方法 |
JP3723277B2 (ja) * | 1996-05-21 | 2005-12-07 | 日東電工株式会社 | レジスト除去用接着シ―ト類とレジスト除去方法 |
JPH107763A (ja) * | 1996-06-27 | 1998-01-13 | Sumitomo Bakelite Co Ltd | 導電性樹脂ペースト |
US6316104B1 (en) * | 1998-05-19 | 2001-11-13 | Sony Chemicals Corporation | Adhesives and circuit materials using said adhesives |
US6747348B2 (en) * | 2001-10-16 | 2004-06-08 | Micron Technology, Inc. | Apparatus and method for leadless packaging of semiconductor devices |
JP2005036126A (ja) * | 2003-07-16 | 2005-02-10 | Nippon Kayaku Co Ltd | エポキシ樹脂組成物及びそれを用いたフレキシブル印刷配線板材料。 |
JP4406300B2 (ja) * | 2004-02-13 | 2010-01-27 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP4184994B2 (ja) | 2004-02-18 | 2008-11-19 | 信越半導体株式会社 | シリコンウエーハ内部の不純物除去方法 |
US7315069B2 (en) | 2004-11-24 | 2008-01-01 | Northrop Grumman Corporation | Integrated multi-purpose getter for radio-frequency (RF) circuit modules |
JP2006216692A (ja) * | 2005-02-02 | 2006-08-17 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2009049400A (ja) * | 2007-07-25 | 2009-03-05 | Nitto Denko Corp | 熱硬化型ダイボンドフィルム |
JP5149121B2 (ja) * | 2008-10-20 | 2013-02-20 | 日東電工株式会社 | 半導体装置の製造方法に用いる接着シート及び当該方法より得られる半導体装置 |
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CN102034800A (zh) | 2011-04-27 |
US20110068480A1 (en) | 2011-03-24 |
JP2011071216A (ja) | 2011-04-07 |
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