JP5090833B2 - ポジ型ホトレジスト組成物、及びそれを用いた感光性膜付基板 - Google Patents

ポジ型ホトレジスト組成物、及びそれを用いた感光性膜付基板 Download PDF

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Publication number
JP5090833B2
JP5090833B2 JP2007235526A JP2007235526A JP5090833B2 JP 5090833 B2 JP5090833 B2 JP 5090833B2 JP 2007235526 A JP2007235526 A JP 2007235526A JP 2007235526 A JP2007235526 A JP 2007235526A JP 5090833 B2 JP5090833 B2 JP 5090833B2
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Prior art keywords
component
acid
photoresist composition
positive photoresist
mass
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JP2007235526A
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English (en)
Japanese (ja)
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JP2009069284A5 (enrdf_load_stackoverflow
JP2009069284A (ja
Inventor
靖男 増田
薫 石川
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Tokyo Ohka Kogyo Co Ltd
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Tokyo Ohka Kogyo Co Ltd
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Priority to JP2007235526A priority Critical patent/JP5090833B2/ja
Priority to TW097134586A priority patent/TW200912532A/zh
Priority to KR1020080089148A priority patent/KR101152163B1/ko
Publication of JP2009069284A publication Critical patent/JP2009069284A/ja
Publication of JP2009069284A5 publication Critical patent/JP2009069284A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
    • C08F290/02—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated end groups
    • C08F290/06—Polymers provided for in subclass C08G
    • C08F290/062—Polyethers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
    • C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
    • C08L61/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
    • C08L61/14—Modified phenol-aldehyde condensates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2007235526A 2007-09-11 2007-09-11 ポジ型ホトレジスト組成物、及びそれを用いた感光性膜付基板 Active JP5090833B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007235526A JP5090833B2 (ja) 2007-09-11 2007-09-11 ポジ型ホトレジスト組成物、及びそれを用いた感光性膜付基板
TW097134586A TW200912532A (en) 2007-09-11 2008-09-09 Positive photoresist composition and substrate with photo-sensitive film using the same
KR1020080089148A KR101152163B1 (ko) 2007-09-11 2008-09-10 포지티브형 포토레지스트 조성물 및 그것을 사용한 감광성막 부착 기판

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007235526A JP5090833B2 (ja) 2007-09-11 2007-09-11 ポジ型ホトレジスト組成物、及びそれを用いた感光性膜付基板

Publications (3)

Publication Number Publication Date
JP2009069284A JP2009069284A (ja) 2009-04-02
JP2009069284A5 JP2009069284A5 (enrdf_load_stackoverflow) 2010-10-07
JP5090833B2 true JP5090833B2 (ja) 2012-12-05

Family

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JP2007235526A Active JP5090833B2 (ja) 2007-09-11 2007-09-11 ポジ型ホトレジスト組成物、及びそれを用いた感光性膜付基板

Country Status (3)

Country Link
JP (1) JP5090833B2 (enrdf_load_stackoverflow)
KR (1) KR101152163B1 (enrdf_load_stackoverflow)
TW (1) TW200912532A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140086724A (ko) 2012-12-28 2014-07-08 제일모직주식회사 표시장치 절연막용 감광성 수지 조성물, 및 이를 이용한 표시장치 절연막 및 표시장치
JP2015064404A (ja) * 2013-09-24 2015-04-09 株式会社エスケーエレクトロニクス 位相シフトマスク及びその製造方法
TWI676864B (zh) * 2016-09-22 2019-11-11 奇美實業股份有限公司 正型感光性樹脂組成物、圖案化膜及凸塊的製造方法
JP2025102576A (ja) 2023-12-26 2025-07-08 東京応化工業株式会社 化学増幅型ポジ型感光性樹脂組成物、感光性ドライフィルム、及びパターン化されたレジスト膜の製造方法
JP2025102540A (ja) 2023-12-26 2025-07-08 東京応化工業株式会社 化学増幅型ポジ型感光性樹脂組成物、感光性ドライフィルム、及びパターン化されたレジスト膜の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3360363B2 (ja) * 1993-06-30 2002-12-24 ジェイエスアール株式会社 レジスト被膜の形成法
JP3859181B2 (ja) * 1997-03-27 2006-12-20 東京応化工業株式会社 導電パターン形成方法
KR20000076585A (ko) * 1999-02-02 2000-12-26 미우라 아끼라 방사선 민감성 수지 조성물
JP3977307B2 (ja) * 2003-09-18 2007-09-19 東京応化工業株式会社 ポジ型フォトレジスト組成物及びレジストパターン形成方法
JP4558443B2 (ja) * 2004-03-15 2010-10-06 ダイセル化学工業株式会社 レジスト組成物
JP2006003422A (ja) * 2004-06-15 2006-01-05 Fuji Photo Film Co Ltd パターン形成方法及びｔｆｔアレイ基板並びに液晶表示素子
JP4813193B2 (ja) * 2006-01-31 2011-11-09 Ａｚエレクトロニックマテリアルズ株式会社 スピンレス、スリットコーティングに適した感光性樹脂組成物

Also Published As

Publication number Publication date
TWI379159B (enrdf_load_stackoverflow) 2012-12-11
KR101152163B1 (ko) 2012-06-15
JP2009069284A (ja) 2009-04-02
KR20090027161A (ko) 2009-03-16
TW200912532A (en) 2009-03-16

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